Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/1995
05/17/1995EP0653795A2 Double implanted laterally diffused MOS device and method thereof
05/17/1995EP0653793A1 Semiconductor device
05/17/1995EP0653786A2 Method of manufacturing a semiconductor apparatus
05/17/1995EP0653785A2 Di-electric isolated type semiconductor device
05/17/1995EP0653664A2 Liquid crystal display panel and method for manufacturing the panel
05/16/1995US5416736 Vertical field-effect transistor and a semiconductor memory cell having the transistor
05/16/1995US5416735 Non-volatile random access memory with ferroelectric capacitor
05/16/1995US5416354 Inverted epitaxial process semiconductor devices
05/16/1995US5416352 Gate electrode formed on a region ranging from a gate insulating film to a field insulating film
05/16/1995US5416350 Semiconductor device with vertical transistors connected in series between bit lines
05/16/1995US5416347 Semiconductor memory device with additional conductive line to prevent line breakage
05/16/1995US5416346 Charge transferring device having an FDA type charge detecting section and a method for producing the same
05/16/1995US5416341 Substrate for a semiconductor device and method for manufacturing a semiconductor device from the substrate
05/16/1995US5416340 Thin film transistor and active matrix liquid crystal display device having reduced photoelectric leakage current due to incident light
05/16/1995US5416339 Semiconductor device having electrode for collecting electric charge in channel region
05/16/1995US5416043 Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
05/16/1995US5416040 Semiconductors
05/16/1995US5416039 Method of making BiCDMOS structures
05/16/1995US5416033 Integrated circuit and manufacture
05/16/1995US5415726 Method of making a bridge-supported accelerometer structure
05/16/1995US5415040 Acceleration sensor
05/11/1995WO1995012896A1 Semiconductor device
05/11/1995WO1995012808A1 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics
05/11/1995DE4439131A1 Semiconductor device and method for producing the same
05/11/1995DE4438658A1 Semiconductor device and method for producing the same
05/11/1995DE4335834A1 Non-volatile memory and method for its production
05/10/1995EP0652599A1 Lateral Semiconductor-on-Insulator (SOI) semiconductor device having a lateral drift region
05/10/1995EP0652598A2 Voltage controlled bidirectional switch
05/10/1995EP0652597A1 Insulated gate semiconductor device and method of fabricating same
05/10/1995EP0652596A1 Imager and fabrication thereof
05/10/1995EP0652595A2 Thin film semiconductor device for display and method of producing same
05/10/1995EP0652594A1 Integrated circuit with power element and low voltage elements
05/10/1995EP0652589A1 Method of manufacturing a semiconductor device comprising two coplanar electrical conductors separated by a dielectric layer and semiconductor device obtained by suel a method
05/10/1995EP0652440A1 Improved acceleration sensor apparatus and method for making same
05/10/1995EP0652439A1 Semiconductor accelerometer having reduced sensor plate flexure
05/10/1995CN2196820Y Silicon controlled rectifier capable of being cut-off
05/10/1995CN1102507A Gallium nitride-based III-V group compound semiconductor device having an ohmic electrode, and method of producing the same
05/09/1995US5414693 Self-aligned dual-bit split gate (DSG) flash EEPROM cell
05/09/1995US5414665 Method of erasing data stored in electrically erasable and programmable read only memory device without deterioration of characteristics
05/09/1995US5414467 Charge transfer device wherein the time constant between the clock means and the transfer gate electrodes are substantially equal
05/09/1995US5414296 Venetian blind cell layout for RF power transistor
05/09/1995US5414295 Avalance diode incorporated in a bipolar integrated circuit
05/09/1995US5414292 Junction-isolated floating diode
05/09/1995US5414290 IGBT with self-aligning cathode pattern and method for producing it
05/09/1995US5414289 Dynamic memory device having a vertical transistor
05/09/1995US5414288 Vertical transistor having an underlying gate electrode contact
05/09/1995US5414287 For an erasable programmable read-only memory or flash-memory
05/09/1995US5414283 TFT with reduced parasitic capacitance
05/09/1995US5414279 cBN semiconductor device having an ohmic electrode and a method of making the same
05/09/1995US5414277 Thin film transistor which prevents generation of hot carriers
05/09/1995US5414276 Transistors using crystalline silicon devices on glass
05/09/1995US5414274 Quantum multifunction transistor with gated tunneling region
05/09/1995US5414273 Heterojunction bipolar transistor
05/09/1995US5414272 Semiconductor electron emission element
05/09/1995US5413951 Composite semiconductor substrate and a fabrication process thereof
05/09/1995US5413949 Method of making self-aligned MOSFET
05/09/1995US5413948 Method for forming a dual transistor structure
05/09/1995US5413947 Method for manufacturing a semiconductor device with an epitaxial void
05/09/1995US5413946 Method of making flash memory cell with self-aligned tunnel dielectric area
05/09/1995US5413943 Semiconductor device and method of manufacturing the same
05/09/1995US5413313 Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor
05/09/1995US5412993 Pressure detection gage for semiconductor pressure sensor
05/09/1995US5412986 Accelerometer with improved strain gauge sensing means
05/04/1995WO1995012216A1 Manufacture of mis field effect semiconductor device
05/04/1995WO1995012213A1 Method of controlling oxide thinning in an eprom or flash memory array
05/04/1995DE4437960A1 Semiconductor memory device
05/04/1995DE4409863C1 Method for producing a single-electrode component
05/04/1995DE4407250A1 Method for producing a PMOS FET in a semiconductor component
05/04/1995DE4407248A1 Flash EEPROM memory cell, memory device and method for forming the same
05/04/1995DE4337329A1 Fast power diode
05/04/1995DE4336663A1 Method for producing a sequence of regions and diode structure which can be produced by this method
05/04/1995DE4143405C2 Ceramic electronic components
05/03/1995EP0651447A1 Silicon resonant tunneling
05/03/1995EP0651446A2 GTO thyristor
05/03/1995EP0651445A2 Turn-off thyristor
05/03/1995EP0651443A1 Integrated structure comprising a vertical and a laterial bipolar transistor
05/03/1995EP0651441A1 High-frequency semiconductor device with protection device
05/03/1995EP0651435A1 Semiconductor device comprising a SIPOS field plate and its manufacturing method
05/03/1995EP0651431A2 Method of crystallizing a silicone layer and semiconductor devices obtained by using the method
05/03/1995EP0651430A1 Method of making off-axis growth sites on nonpolar substrates and substrates so obtained
05/03/1995CN1102274A Withstand voltage layer with special shaped doped island for semiconductor device
05/02/1995USH1435 SOI CMOS device having body extension for providing sidewall channel stop and bodytie
05/02/1995US5412609 Nonvolatile semiconductor memory device
05/02/1995US5412600 Non-volatile semiconductor device with selecting transistor formed between adjacent memory transistors
05/02/1995US5412598 Bistable four layer device, memory cell, and method for storing and retrieving binary information
05/02/1995US5412558 Semiconductor integrated circuit unit
05/02/1995US5412493 Liquid crystal display device having LDD structure type thin film transistors connected in series
05/02/1995US5412249 Multilayer element with group III and group V alloys or intermetallics
05/02/1995US5412241 Method for making an improved high voltage thin film transistor having a linear doping profile
05/02/1995US5412240 Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness
05/02/1995US5412239 Contact geometry for improved lateral MOSFET
05/02/1995US5412238 Source-coupling, split-gate, virtual ground flash EEPROM array
05/02/1995US5412237 Semiconductor device with improved element isolation and operation rate
05/02/1995US5412236 Quantum well optical device
05/02/1995US5412234 Integrated semiconductor circuit having improved breakdown voltage characteristics
05/02/1995US5412233 Heterojunction bipolar transistor
05/02/1995US5412232 Semiconductor device having an improved electron transport property at a high electric field
05/02/1995US5412231 Semiconductor device having organically doped structure
05/02/1995US5412230 Multilayer semiconductor with channels, dopes and electrodes
05/02/1995US5412228 Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same
1 ... 1969 1970 1971 1972 1973 1974 1975 1976 1977 1978 1979 1980 1981 1982 1983 1984 1985 1986 1987 1988 1989 ... 2182