| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/11/1995 | US5406115 Semiconductor device including bipolar transistor having shallowed base and method for manufacturing the same |
| 04/11/1995 | US5406114 Bipolar high-frequency transistor |
| 04/11/1995 | US5406113 Bipolar transistor having a buried collector layer |
| 04/11/1995 | US5406112 Semiconductor device having a buried well and a crystal layer with similar impurity concentration |
| 04/11/1995 | US5406110 Resurf lateral double diffused insulated gate field effect transistor |
| 04/11/1995 | US5406108 Interconnection construction of semiconductor device |
| 04/11/1995 | US5406107 Static semiconductor memory device having capacitors for increased soft error immunity |
| 04/11/1995 | US5406106 Semiconductor Bi-MIS device and method of manufacturing the same |
| 04/11/1995 | US5406104 MOSFET circuit with separate and common electrodes |
| 04/11/1995 | US5406102 Semiconductor device and manufacturing method thereof |
| 04/11/1995 | US5406101 Signal charge transfer device |
| 04/11/1995 | US5406100 Semiconductor integrated circuit device having multi-contact wiring structure |
| 04/11/1995 | US5406099 High electron mobility transistor |
| 04/11/1995 | US5406098 Semiconductor circuit device and method for production thereof |
| 04/11/1995 | US5406096 Device and method for high performance high voltage operation |
| 04/11/1995 | US5406094 Quantum interference effect semiconductor device and method of producing the same |
| 04/11/1995 | US5405803 Method of manufacturing a semiconductor device |
| 04/11/1995 | US5405797 Method of producing a monolithically integrated millimeter wave circuit |
| 04/11/1995 | US5405795 Method of forming a SOI transistor having a self-aligned body contact |
| 04/11/1995 | US5405794 Method of producing VDMOS device of increased power density |
| 04/11/1995 | US5405793 Multilayer; variations in doping concentration |
| 04/11/1995 | US5405790 Method of forming a semiconductor structure having MOS, bipolar, and varactor devices |
| 04/11/1995 | US5405789 Method of manufacturing a semiconductor device whereby a laterally bounded semiconductor zone is formed in a semiconductor body in a self-aligning manner |
| 04/11/1995 | US5405787 Structure and method of manufacture for MOS field effect transistor having lightly doped drain and source diffusion regions |
| 04/11/1995 | US5405786 Stress sensitive P-N junction devices formed from porous silicon and methods for producing the same |
| 04/11/1995 | US5405454 Comprising a quantum dot or wire disposed between at least two insulating layers formed by oxidizing the silicon substrate, the boundary having positional accuracy, flatness and linearity |
| 04/11/1995 | US5404749 Boron doped silicon accelerometer sense element |
| 04/06/1995 | WO1995009439A1 Silicon carbide field effect device |
| 04/06/1995 | WO1995009423A1 Spacer flash cell process |
| 04/06/1995 | WO1995009366A1 Micromechanical device and process for producing the same |
| 04/06/1995 | DE4435204A1 Input protection circuit |
| 04/06/1995 | DE4410272C1 Method for producing semiconductor elements |
| 04/05/1995 | EP0647026A2 Over current protection device for transistor |
| 04/05/1995 | EP0646970A2 Semiconductor device having a deep impurity level for high temperature range operation |
| 04/05/1995 | EP0646969A2 Carbon silicon semiconductor device having a narrowed bandgap characteristic and method of fabrication |
| 04/05/1995 | EP0646968A1 Method of manufacturing diamond semiconductor |
| 04/05/1995 | EP0646967A1 Low-noise bipolar transistor |
| 04/05/1995 | EP0646965A1 An integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration |
| 04/05/1995 | EP0646964A1 Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof |
| 04/05/1995 | EP0646960A1 Semiconductor device with a semiconductor element provided in a mesa structure |
| 04/05/1995 | EP0646959A1 Metallization and bonding process for manufacturing power semiconductor devices |
| 04/05/1995 | EP0646953A2 Method for reduction of off-current in thin film transistors |
| 04/05/1995 | EP0646952A2 Semiconductor bipolar device and method of manufacturing the same |
| 04/05/1995 | EP0646951A2 Semiconductor layer structure having distributed strain and optical semiconductor device including such strained lyer |
| 04/05/1995 | EP0646950A2 Method for processing a thin film |
| 04/05/1995 | EP0646289A1 Semiconductor devices with a double gate |
| 04/05/1995 | EP0646288A1 Single polysilicon layer flash e?2 prom cell |
| 04/05/1995 | EP0646246A1 Method for fabricating monolithic chip containing integrated circuitry and self-supporting microstructure. |
| 04/05/1995 | EP0397727B1 Electronic appliance |
| 04/05/1995 | CN1101169A Semiconductor device |
| 04/05/1995 | CN1101167A Semiconductor device and fabrication method of the same |
| 04/04/1995 | US5404328 Memory cell having floating gate and semiconductor memory using the same |
| 04/04/1995 | US5404047 Semiconductor die having a high density array of composite bond pads |
| 04/04/1995 | US5404043 Semiconductor devices of the planar type bipolar transistors and combination bipolar/MIS type transistors |
| 04/04/1995 | US5404040 Structure and fabrication of power MOSFETs, including termination structures |
| 04/04/1995 | US5404038 Semiconductor device and manufacturing method thereof |
| 04/04/1995 | US5404037 EEPROM cell with the drain diffusion region self-aligned to the tunnel oxide region |
| 04/04/1995 | US5404032 Field-effect semiconductor device |
| 04/04/1995 | US5404030 One-bit memory cell in static random access memory device with PMOS thin film transistor load pair |
| 04/04/1995 | US5404028 Electrical junction device with lightly doped buffer region to precisely locate a p-n junction |
| 04/04/1995 | US5404027 Buried ridge II-VI laser diode |
| 04/04/1995 | US5403786 Semiconductor device and method for fabricating the same |
| 04/04/1995 | US5403765 Method of manufacturing double-layer gate programmable ROM |
| 04/04/1995 | US5403764 Method for producing a ROM on a semiconductor device having a nonvolatile memory |
| 04/04/1995 | US5403763 Method of manufacturing a vertical channel FET |
| 04/04/1995 | US5403761 Method of fabricating a thin film transistor |
| 04/04/1995 | US5403758 Process of forming a bipolar type semiconductor device |
| 04/04/1995 | US5403757 Method of producing a double-polysilicon bipolar transistor |
| 04/04/1995 | US5403755 Method for fabricating a thin film transistor |
| 03/30/1995 | WO1995008868A1 Field effect transistor with switchable body to source connection |
| 03/30/1995 | WO1995008846A1 Structure and method of making a capacitor for an integrated circuit |
| 03/30/1995 | WO1995008775A1 Integrated micromechanical sensor device and process for producing it |
| 03/30/1995 | DE4434040A1 Semiconductor memory device and method for its production |
| 03/30/1995 | DE4433086A1 Semiconductor device and method for its production |
| 03/30/1995 | DE4409007C1 Method for producing a component using molecular beam epitaxy |
| 03/30/1995 | DE4333160A1 Production method for a nitrided silicon oxide layer with reduced thermal loading |
| 03/30/1995 | DE4333099A1 Force sensor and process for producing a force sensor |
| 03/29/1995 | EP0645823A1 Four layer overvoltage protection diode |
| 03/29/1995 | EP0645822A1 High efficiency electrically adjustable width field effect transistor and method therefor |
| 03/29/1995 | EP0645821A1 Low noise bipolar transistor |
| 03/29/1995 | EP0645818A2 Monolithically integrated electronic apparatus |
| 03/29/1995 | EP0645817A1 Diode protected semiconductor device |
| 03/29/1995 | EP0645803A2 Method for fabricating thin film transistor |
| 03/29/1995 | EP0645802A2 Semiconductor device and method for manufacturing the same |
| 03/29/1995 | EP0645613A1 Thin-film absolute-pressure sensors and methods of manufacturing same |
| 03/29/1995 | EP0645053A1 Field effect transistor controlled thyristor having improved turn-on characteristics |
| 03/29/1995 | EP0645052A1 Silicon carbide power mosfet with floating field ring and floating field plate |
| 03/29/1995 | EP0566585B1 Storage cell arrangement and process for operating it |
| 03/29/1995 | CN1100817A Continuous film feed device and method therefor |
| 03/28/1995 | US5402459 Frame transfer image sensor with electronic shutter |
| 03/28/1995 | US5402382 Nonvolatile semiconductor memory device capable of erasing by a word line unit |
| 03/28/1995 | US5402374 Non-volatile semiconductor memory device and memory circuit using the same |
| 03/28/1995 | US5402373 Electrically erasable programmable read-only memory with electric field decreasing controller |
| 03/28/1995 | US5402372 High density EEPROM cell array with improved access time and method of manufacture |
| 03/28/1995 | US5402371 Method of writing data into and erasing the same from semiconductor nonvolatile memory |
| 03/28/1995 | US5402002 Bipolar transistor with reduced base/collector capacitance |
| 03/28/1995 | US5401999 Circuit integrating heterojunction bipolar transistors with pin diodes |
| 03/28/1995 | US5401994 Semiconductor device with a non-uniformly doped channel |
| 03/28/1995 | US5401993 Non-volatile memory |
| 03/28/1995 | US5401992 High-density nonvolatile semiconductor memory |