| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/02/1995 | US5412227 MOS-controlled thyristor with non-planar geometry |
| 05/02/1995 | US5412224 Field effect transistor with non-linear transfer characteristic |
| 05/02/1995 | US5412223 Semiconductor device exploiting a quantum interference effect |
| 05/02/1995 | US5411919 Semiconductor device and method of manufacturing the same |
| 05/02/1995 | US5411914 Gallium arsenide or gallium aluminum arsenide multilayer element formed with heat treatment |
| 05/02/1995 | US5411910 Method for improving characteristics of parasitic PN diodes in static random access memory cell |
| 05/02/1995 | US5411908 Flash EEPROM array with P-tank insulated from substrate by deep N-tank |
| 05/02/1995 | US5411906 Method of fabricating auxiliary gate lightly doped drain (AGLDD) structure with dielectric sidewalls |
| 05/02/1995 | US5411905 Method of making trench EEPROM structure on SOI with dual channels |
| 05/02/1995 | US5411903 Self-aligned complementary HFETS |
| 05/02/1995 | US5411902 Multilayer transistors with barriers and buffer layers |
| 05/02/1995 | US5411901 Method of making high voltage transistor |
| 05/02/1995 | US5411898 Method of manufacturing a complementary bipolar transistor |
| 05/02/1995 | US5411632 Method for the etching of a heterostructure of materials of the III-V group |
| 05/02/1995 | CA2130739A1 Composition and method for off-axis growth sites on nonpolar substrates |
| 04/27/1995 | WO1995011525A1 SOLID-STATE p-CHANNEL HIGH-VOLTAGE COMPONENT |
| 04/27/1995 | WO1995011522A1 Method for fabricating transistors using crystalline silicon devices on glass |
| 04/27/1995 | DE4437759A1 Protective transistor for electrostatic discharges and method for its production |
| 04/27/1995 | DE4335851A1 Method for producing a MOS transistor |
| 04/26/1995 | EP0650201A1 Ohmic electrode for N-type semiconductor cubic boron nitride and method of producing same |
| 04/26/1995 | EP0650197A2 Thin film semiconductor integrated circuit and method of fabricating the same |
| 04/26/1995 | EP0650190A1 Single event upset hardening of commercial VLSI technology without circuit redesign |
| 04/26/1995 | EP0650186A1 Method of manufacturing a semiconductor device whereby a semiconductor zone is formed through diffusion from a strip of polycrystalline silicon |
| 04/26/1995 | EP0649480A1 Semimetal-semiconductor heterostructures and multilayers |
| 04/26/1995 | EP0386152B1 Millimeter wave imaging device |
| 04/25/1995 | US5410503 Semiconductor memory device having memory cells including transistors and capacitors |
| 04/25/1995 | US5410172 Information processing apparatus |
| 04/25/1995 | US5410171 Vertical type semiconductor with main current section and emulation current section |
| 04/25/1995 | US5410170 DMOS power transistors with reduced number of contacts using integrated body-source connections |
| 04/25/1995 | US5410167 Semiconductor device with reduced side gate effect |
| 04/25/1995 | US5410165 Thin film transistor with conductive layer and static RAM with thin film transistor |
| 04/25/1995 | US5410164 Display electrode substrate |
| 04/25/1995 | US5410161 Semiconductor device equipped with characteristic checking element |
| 04/25/1995 | US5410160 Interband tunneling field effect transistor |
| 04/25/1995 | US5410158 Bipolar transistor apparatus with iso-terminals |
| 04/25/1995 | US5409859 Method of forming platinum ohmic contact to p-type silicon carbide |
| 04/25/1995 | US5409857 Process for production of an integrated circuit |
| 04/25/1995 | US5409853 Process of making silicided contacts for semiconductor devices |
| 04/25/1995 | US5409851 Method of making a thin film transistor |
| 04/25/1995 | US5409849 Method of manufacturing a compound semiconductor device having gate electrode self-aligned to source and drain electrodes |
| 04/25/1995 | US5409848 Angled lateral pocket implants on p-type semiconductor devices |
| 04/25/1995 | US5409846 Method of fabricating a semiconductor device including heterojunction bipolar transistor |
| 04/25/1995 | US5409843 Method of producing a semiconductor device by forming contacts after flowing a glass layer |
| 04/25/1995 | US5408885 Pressure detecting circuit for semiconductor pressure sensor |
| 04/20/1995 | WO1995010855A1 Electrostatic discharge protection circuit |
| 04/20/1995 | WO1995004284A3 Electrostatically force balanced silicon accelerometer |
| 04/20/1995 | DE4419762A1 Component with grown and deposited two-film gate oxide and method for its production |
| 04/19/1995 | EP0649178A2 Flash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programming |
| 04/19/1995 | EP0649177A1 Semiconductor device with a fast lateral DMOST provided with a high-voltage source electrode |
| 04/19/1995 | EP0649176A2 Insulated-gate bipolar transistor |
| 04/19/1995 | EP0649175A1 Lateral IGBT device with switchable anode structure |
| 04/19/1995 | EP0649174A1 Controllable conduction device with multiple tunnel junction |
| 04/19/1995 | EP0649167A2 Method of manufacturing an ohmic electrode having a multi-layered structure |
| 04/19/1995 | EP0649166A2 Transistor gate formation |
| 04/19/1995 | EP0648375A1 Triple-gate flash eeprom memory and method for making same |
| 04/19/1995 | CN1101755A Semiconductor element and semiconductor memory device using the same |
| 04/18/1995 | US5408430 Method for operating nonvolatile memory semiconductor devices memories |
| 04/18/1995 | US5408429 Method of altering a non-volatile semiconductor memory device |
| 04/18/1995 | US5408124 Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance |
| 04/18/1995 | US5408118 Vertical double diffused MOSFET having a low breakdown voltage and constituting a power semiconductor device |
| 04/18/1995 | US5408117 Semiconductor device and method of fabricating the same |
| 04/18/1995 | US5408116 Grooved gate transistor having source and drain diffused layers with specified groove corner shape |
| 04/18/1995 | US5408115 Self-aligned, split-gate EEPROM device |
| 04/18/1995 | US5408111 Field-effect transistor having a double pulse-doped structure |
| 04/18/1995 | US5408109 Visible light emitting diodes fabricated from soluble semiconducting polymers |
| 04/18/1995 | US5408107 Semiconductor device apparatus having multiple current-voltage curves and zero-bias memory |
| 04/18/1995 | US5408106 Lateral resonant tunneling transistor with heterojunction barriers |
| 04/18/1995 | US5407870 Process for fabricating a semiconductor device having a high reliability dielectric material |
| 04/18/1995 | US5407859 Field effect transistor with landing pad |
| 04/18/1995 | US5407857 Method for producing a semiconductor device with a doped polysilicon layer by updiffusion |
| 04/18/1995 | US5407855 Forming a region in semiconductor substrate, multilayer of silicon, dielectric, electrode, barrier, contact and via plug and an interconnet, an electroconductive layer of ruthenium, osmium, rhenium, iridium and their oxides |
| 04/18/1995 | US5407853 Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements |
| 04/18/1995 | US5407850 SOI transistor threshold optimization by use of gate oxide having positive charge |
| 04/18/1995 | US5407848 Method for forming a gate electrode having a polycide structure |
| 04/18/1995 | US5407846 Method of manufacturing a thin film transistor |
| 04/18/1995 | US5407845 Method of manufacturing thin film transistors in a liquid crystal display apparatus |
| 04/18/1995 | US5407844 Process for simultaneously fabricating an insulated gate field-effect transistor and a bipolar transistor |
| 04/18/1995 | US5407843 Method for manufacturing lateral bipolar transistors |
| 04/18/1995 | US5407842 Forming doped subcollector layer and first layer of same doping type and lower doping level over subcollector layer, increasing doping level of first layer, forming second layer, increasing doping level, forming layer of opposite doping type |
| 04/18/1995 | US5407839 Forming first and second gate electrode layers having desired thickness, patterning by photolithography |
| 04/18/1995 | US5407838 Method for fabricating a semiconductor device using implantation and subsequent annealing to eliminate defects |
| 04/18/1995 | US5407837 Method of making a thin film transistor |
| 04/18/1995 | US5407501 Method of manufacture of pressure sensor having a laminated substrate |
| 04/13/1995 | WO1995010122A1 Semiconductor component with high breakdown voltage |
| 04/13/1995 | DE4435754A1 Pressure sensor and associated chip |
| 04/13/1995 | DE4435461A1 Thin-film transistors and production method |
| 04/13/1995 | DE4334123A1 Pressure sensor |
| 04/13/1995 | DE4333978A1 Nonvolatile semiconductor memory and method for production thereof |
| 04/12/1995 | EP0647971A1 Thin film transistor and display using the transistor |
| 04/12/1995 | EP0647968A2 Semiconductor device comprising a plurality of element separating trenches and method of manufacturing same |
| 04/12/1995 | EP0647832A2 Piezoresistive sensor structure |
| 04/12/1995 | EP0647383A1 Single crystal silicon arrayed devices for projection displays |
| 04/12/1995 | EP0601093A4 Igbt process and device with platinum lifetime control. |
| 04/12/1995 | EP0401354B1 Semiconductor device comprising an integrated circuit having a vertical transistor |
| 04/12/1995 | CN1101457A A method for making a metal oxide semiconductor-field effect transistor with drain separated from channel |
| 04/12/1995 | CN1101451A Nonvolatile semiconductor memories with a nand logic cell structure |
| 04/12/1995 | CN1028192C Process for compensating collecting zone by local ion implanation |
| 04/11/1995 | US5406524 Nonvolatile semiconductor memory that eases the dielectric strength requirements |
| 04/11/1995 | US5406521 Semiconductor memory device and data erase method for it |
| 04/11/1995 | US5406123 Single crystal titanium nitride epitaxial on silicon |