| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/08/1995 | EP0642154A1 Process for producing group III-V compound semiconductor and group III-V compound semiconductor |
| 03/08/1995 | EP0642004A2 Sound emission transducer |
| 03/08/1995 | EP0641488A1 Electrostrictive sensors and actuators |
| 03/08/1995 | EP0641485A1 Membrane dielectric isolation ic fabrication |
| 03/07/1995 | US5396459 Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line |
| 03/07/1995 | US5396458 Semiconductor memory device and method of writing and reading out information for the same |
| 03/07/1995 | US5396455 Magnetic non-volatile random access memory |
| 03/07/1995 | US5396394 ISDN device line protection circuit |
| 03/07/1995 | US5396304 Slide projector mountable light valve display |
| 03/07/1995 | US5396119 MOS power transistor device with temperature compensation |
| 03/07/1995 | US5396103 Graded composition ohmic contact for P-type II-VI semiconductors |
| 03/07/1995 | US5396099 MOS type semiconductor device having a high ON current/OFF current ratio |
| 03/07/1995 | US5396098 Structure and method of manufacturing a semiconductor memory device |
| 03/07/1995 | US5396097 Transistor with common base region |
| 03/07/1995 | US5396095 Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor |
| 03/07/1995 | US5396089 Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface |
| 03/07/1995 | US5396088 MOS component with a particular source and base structure |
| 03/07/1995 | US5396087 Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
| 03/07/1995 | US5396085 Silicon carbide switching device with rectifying-gate |
| 03/07/1995 | US5396084 Thin film transistor device having driving circuit and matrix circuit |
| 03/07/1995 | US5396083 Thin film transistor and method of making the same |
| 03/07/1995 | US5396082 Semiconductor substrate and device with a surface layer structure |
| 03/07/1995 | US5396066 Displacement element, cantilever probe and information processing apparatus using cantilever probe |
| 03/07/1995 | US5395804 Method for fabricating a thin film transistor |
| 03/07/1995 | US5395802 Process for making semiconductor acceleration sensor having anti-etching layer |
| 03/07/1995 | US5395787 Method of manufacturing shallow junction field effect transistor |
| 03/07/1995 | US5395780 Process for fabricating MOS transistor |
| 03/07/1995 | US5395779 Process of manufacture of split gate EPROM device |
| 03/07/1995 | US5395778 Method of manufacturing an integrated circuit having a memory element |
| 03/07/1995 | US5395777 Method of producing VDMOS transistors |
| 03/07/1995 | US5395776 Method of making a rugged DMOS device |
| 03/07/1995 | US5395775 Method for manufacturing lateral bipolar transistors |
| 03/07/1995 | US5395774 Methods for forming a transistor having an emitter with enhanced efficiency |
| 03/07/1995 | US5395772 SOI type MOS transistor device |
| 03/07/1995 | US5395739 Photoresists |
| 03/07/1995 | US5394751 Method of producing semiconductor pressure sensor |
| 03/02/1995 | WO1995006328A1 Self-aligned cmos process |
| 03/02/1995 | WO1995006327A1 Bipolar transistor process |
| 03/02/1995 | DE4424738A1 Semiconductor device of the type having high breakdown voltage |
| 03/02/1995 | DE4409367A1 Method for producing a thin-film transistor |
| 03/01/1995 | EP0641028A2 A thin film device and a method for fabricating the same |
| 03/01/1995 | EP0641027A1 Semiconductor device |
| 03/01/1995 | EP0641024A2 Semiconductor power device |
| 03/01/1995 | EP0641018A1 Manufacturing method of semiconductor device and thin film transistor with a recrystallized thin semiconductor film |
| 03/01/1995 | EP0640982A2 Non-volatile semiconductor memory device and data programming method |
| 03/01/1995 | EP0640248A1 Epitaxial ohmic contact for integrated heterostructure of Group II-VI semiconductor materials and method of fabricating same |
| 03/01/1995 | EP0235248B1 Detector and mixer diode operative at zero bias voltage and fabrication process therefor |
| 02/28/1995 | US5394372 Semiconductor memory device having charge-pump system with improved oscillation means |
| 02/28/1995 | US5394360 Non-volatile large capacity high speed memory with electron injection from a source into a floating gate |
| 02/28/1995 | US5394359 MOS integrated circuit with adjustable threshold voltage |
| 02/28/1995 | US5394357 Non-volatile semiconductor memory device |
| 02/28/1995 | US5394258 Active matrix display screen with storage capacitors formed of conductive blocks, semiconductive material, nonconductive material, and capacitive lines |
| 02/28/1995 | US5394002 Erasable programmable memory |
| 02/28/1995 | US5394001 Nonvolatile semiconductor memory device having reduced resistance value for the common source wiring region |
| 02/28/1995 | US5393999 SiC power MOSFET device structure |
| 02/28/1995 | US5393998 Semiconductor memory device containing junction field effect transistor |
| 02/28/1995 | US5393997 Solid state imaging device |
| 02/28/1995 | US5393995 Semiconductor thyristor device with recess |
| 02/28/1995 | US5393992 Semiconductor thin film transistor with gate controlled offset portion |
| 02/28/1995 | US5393990 HEMT structure |
| 02/28/1995 | US5393684 Method of making thin oxide portions particularly in electrically erasable and programmable read-only memory cells |
| 02/28/1995 | US5393683 Forming first oxide layer on substrate in oxygen atmosphere, then forming second oxide layer in nitrous oxide atmosphere |
| 02/28/1995 | US5393682 Method of making tapered poly profile for TFT device manufacturing |
| 02/28/1995 | US5393681 Method for forming a compact transistor structure |
| 02/28/1995 | US5393678 Method for making collector arrangement for magnetotransistor |
| 02/28/1995 | US5393676 Implanting argon into polysilicon, patterning, implanting boron fluoride at shallower depth to reduce fluorine diffusion to gate oxide |
| 02/28/1995 | US5393352 Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer |
| 02/28/1995 | US5392651 Capacitance type accelerometer |
| 02/23/1995 | WO1995005706A1 High off-gate gain gto thyristor |
| 02/23/1995 | WO1995005679A1 Bipolar transistors and method of making the same |
| 02/23/1995 | WO1995005626A2 A method for simulating distributed effects within a device such as a power semiconductor device |
| 02/23/1995 | DE4425360A1 Charge-coupled device and method for producing thereof |
| 02/22/1995 | EP0639860A1 Non-volatile semiconductor memory |
| 02/22/1995 | EP0639778A2 Fault based diagnosis of HBT-based circuits using electroluminescence |
| 02/22/1995 | EP0639294A1 Semiconductor device with integrated rc network and schottky diode |
| 02/22/1995 | EP0639266A1 A method of manufacturing a measuring device. |
| 02/21/1995 | US5392306 Multiple quantum well structure and semiconductor device using the same |
| 02/21/1995 | US5392238 Nonvolatile semiconductor memory device |
| 02/21/1995 | US5392237 Semiconductor memory device with EEPROM in trench with polysilicon/metal contacting to source and drain in virtual ground type array |
| 02/21/1995 | US5392187 Integrated circuit power device with transient responsive current limiting means |
| 02/21/1995 | US5391951 Integrated circuit having an adjusting component and an adjustable thyristor |
| 02/21/1995 | US5391908 Lateral insulated gate field effect semiconductor |
| 02/21/1995 | US5391907 Semiconductor device with buried inverse T-type field region |
| 02/21/1995 | US5391902 Semiconductor device and production method thereof |
| 02/21/1995 | US5391899 Compound semiconductor device with a particular gate structure |
| 02/21/1995 | US5391898 Insulated gate bipolar transistor having high short-circuit and latch-up withstandability |
| 02/21/1995 | US5391897 Status induction semiconductor device |
| 02/21/1995 | US5391895 Double diamond mesa vertical field effect transistor |
| 02/21/1995 | US5391515 Capped anneal |
| 02/21/1995 | US5391510 A diamond-like-carbon layer is used as masking structure to protect gate dielectric layer from contamination during high temperature annealing, removal by plasma etching, forming metal gate electrode in space vacated by masking layer |
| 02/21/1995 | US5391509 Method of manufacturing a semiconductor device forming a high concentration impurity region through a CVD insulating film |
| 02/21/1995 | US5391508 Method of forming semiconductor transistor devices |
| 02/21/1995 | US5391507 Lift-off fabrication method for self-aligned thin film transistors |
| 02/21/1995 | US5391506 Manufacturing method for semiconductor devices with source/drain formed in substrate projection. |
| 02/21/1995 | US5391505 Active device constructed in opening formed in insulation layer and process for making same |
| 02/21/1995 | US5391504 Method for producing integrated quasi-complementary bipolar transistors and field effect transistors |
| 02/21/1995 | US5391503 Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask |
| 02/16/1995 | WO1995005006A1 Silicon carbide thyristor |
| 02/16/1995 | WO1994028577A3 Method of producing a structure with narrow line width and devices obtained |
| 02/16/1995 | DE4333661C1 Semiconductor component with high breakdown voltage |