Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1995
06/22/1995DE4406849A1 Prodn. of MOS transistor with tin silicide film
06/22/1995DE4343397A1 Bipolar semiconductor structure with epitaxial layer
06/21/1995EP0658942A2 A high current, high voltage, vertical PMOS transistor
06/21/1995EP0658941A2 Field effect transistor
06/21/1995EP0658940A1 Semiconductor element controlled by field effect
06/21/1995EP0658939A2 Voltage-driven thyristor and method of manufacturing the same
06/21/1995EP0658938A1 An integrated circuit comprising an EPROM cell and a MOS transistor
06/21/1995EP0658904A2 Semiconductor integrated circuit device
06/21/1995EP0646288A4 Single polysilicon layer flash e?2 prom cell.
06/20/1995US5426605 Semiconductor memory device
06/20/1995US5426331 Semiconductor device with multi-layered heat-resistive electrode in titanium-titanium nitride-plantinum-gold system
06/20/1995US5426329 Uniformity doping
06/20/1995US5426328 BICDMOS structures
06/20/1995US5426327 MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations
06/20/1995US5426326 Semiconductor device including arrangement for reducing junction degradation
06/20/1995US5426325 Metal crossover in high voltage IC with graduated doping control
06/20/1995US5426324 High capacitance multi-level storage node for high density TFT load SRAMs with low soft error rates
06/20/1995US5426322 Semiconductor structure
06/20/1995US5426321 Semiconductor memory element and semiconductor memory device
06/20/1995US5426320 Integrated structure protection device for protecting logic-level power MOS devices against electro-static discharges
06/20/1995US5426318 Horizontal charge coupled device having a multiple reset gate
06/20/1995US5426316 Having superlattices in collector and emitter region, each having alternating layers of silicon and silicon/germanium with germanium concentration decreasing in direction away from base layer
06/20/1995US5426315 Thin-film transistor having an inlaid thin-film channel region
06/20/1995US5426314 Insulated gate control static induction thyristor
06/20/1995US5426313 Thin film transistor array having optical shield layer
06/20/1995US5426311 Solid-state variable-conductance device
06/20/1995US5426067 Method for manufacturing semiconductor device with reduced junction capacitance
06/20/1995US5426065 Method of making transistor devices in an SRAM cell
06/20/1995US5426064 Method of fabricating a semiconductor device
06/20/1995US5426063 Method of making a field effect transistor with submicron channel length and threshold implant using oblique implantation
06/20/1995US5426059 Method of making vertically stacked bipolar semiconductor structure
06/15/1995WO1995016280A1 Porous semiconductor material
06/15/1995WO1995016278A1 Lateral semiconductor-on-insulator (soi) semiconductor device having a buried diode
06/15/1995WO1995016192A1 Method of producing cavity structures
06/14/1995EP0657992A1 Alternating current generator for motor vehicles
06/14/1995EP0657947A1 Power converter
06/14/1995EP0657946A1 Solid state image sensing device
06/14/1995EP0657945A2 Fast power semiconductor devices with structured base
06/14/1995EP0657944A2 Gate controlled lateral bipolar junction transistor and method of fabrication thereof
06/14/1995EP0657943A2 Semiconductor device having a thyristor structure
06/14/1995EP0657942A2 Lateral bipolar transistor
06/14/1995EP0657941A2 Gated power semiconductor device with buffer layer and method of fabrication
06/14/1995EP0657940A2 Dielectrically isolated semiconductor devices having improved characteristics
06/14/1995EP0657939A2 Semiconductor device having a high voltage termination improvement and method of fabrication
06/14/1995EP0657936A1 Tunnel diode with several permanent switching states
06/14/1995EP0657933A1 Integrated structure active clamp for the protection of power semiconductor devices against overvoltages
06/14/1995EP0657929A2 Mosfets with improved short channel effects and method of making the same
06/14/1995EP0657928A1 Non-volatile memory devices
06/14/1995EP0657927A1 Flash EPROM devices
06/14/1995EP0657923A2 Method of protecting a solder ball during an etch process, by applying a resist around the base of the solder ball
06/14/1995EP0657890A2 High voltage components for EEPROM system
06/14/1995EP0657066A1 Field-effect-controlled semiconductor component
06/14/1995EP0639294A4 Semiconductor device with integrated rc network and schottky diode.
06/14/1995EP0493520B1 Hot-carrier suppressed sub-micron misfet device
06/14/1995DE4444149A1 Semiconductor sensor for measurement of yaw
06/14/1995DE4443915A1 Semiconductor device used as bipolar transistor
06/13/1995US5424979 Non-volatile memory cell
06/13/1995US5424857 Matrix-type display apparatus with conductor wire interconnecting capacitor electrodes
06/13/1995US5424575 Semiconductor device for SOI structure having lead conductor suitable for fine patterning
06/13/1995US5424572 Spacer formation in a semiconductor structure
06/13/1995US5424567 Protected programmable transistor with reduced parasitic capacitances and method of fabrication
06/13/1995US5424563 Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices
06/13/1995US5424562 Lateral static induction transistor
06/13/1995US5424249 Method of making mold-packaged pressure sensing semiconductor device
06/13/1995US5424247 Method for making contact holes in semiconductor devices
06/13/1995US5424241 Forming insulating and support layers on substrate; forming recess in insulating layer and aperture in support layer; depositing single crystal silicon cone and fully enclosing it within recess
06/13/1995US5424238 Formimg protective film, forming source and drain regions, forming low dielectric constant film, removing exposed protective film, forming ferroelectric film, forming electrode
06/13/1995US5424234 Method of making oxide semiconductor field effect transistor
06/13/1995US5424233 Method of making electrically programmable and erasable memory device with a depression
06/13/1995US5424232 Method for manufacturing a non-volatile memory having a floating gate oxide type fet provided with a tunnel oxide film
06/13/1995US5424231 Method for manufacturing a VDMOS transistor
06/13/1995US5424230 Method of manufacturing a polysilicon thin film transistor
06/13/1995US5424229 Method for manufacturing MOSFET having an LDD structure
06/13/1995US5424228 Method for fabricating a bipolar transistor with reduced base resistance
06/13/1995US5424227 Depositing and simultaneously doping collector, base, emitter, emitter contact layers, forming base connection region such that intersection surfaces are outside base layer, forming silicon dioxide by thermal oxidation over entire surface
06/13/1995US5424225 Method of manufacturing a thin film SOI MOSFET
06/13/1995US5423285 Applying metal carboxylate precursor in solvent of xylenes, methoxyethanol or butyl acetate to integrated circuit wafer, heating to form layer of metal compound
06/10/1995CA2135982A1 Lateral bipolar transistor
06/10/1995CA2135981A1 Gate controlled lateral bipolar junction transistor and method of fabrication thereof
06/08/1995WO1995015583A1 Fast electrical complete turn-off optical device
06/08/1995WO1995015581A1 Semiconductor integrated circuit
06/08/1995WO1995015580A1 Semiconductor device
06/08/1995WO1995015578A1 Rectifier diode
06/08/1995WO1995015562A1 A capacitorless dram device on silicon-on-insulator substrate
06/08/1995DE4443013A1 Charge transfer device e.g. for two=dimensional linear sensor or delay element
06/08/1995DE4414969C1 Micromechanical component for acceleration or inclination sensor
06/08/1995DE4341517A1 Transistor constructional element preventing short circuit channel effect
06/08/1995DE4341516A1 Mfr. of submicron transistors, e.g. CMOS transistors
06/08/1995DE4341509A1 Prodn. of LDD MOS transistor
06/08/1995DE4341506A1 MOSFET with potentially unconnected source and drain regions
06/07/1995EP0656690A2 Transistor circuit
06/07/1995EP0656665A1 Piezoelectric device
06/07/1995EP0656663A2 Non-volatile semiconductor memory device and method for erasure and production thereof
06/07/1995EP0656662A2 A bidirectional blocking lateral mosfet with improved on-resistance
06/07/1995EP0656661A1 DMOSFET with a resistance for improving the reverse bias conduction
06/07/1995EP0656653A1 Method of manufacturing shallow junction field effect transistor
06/07/1995EP0656649A1 Field effect transistor with landing pad
06/07/1995EP0656647A1 Method of fabricating an integrated circuit device comprising at least a MOS transistor
06/07/1995EP0656646A1 Method of making devices with buried layers by epitaxial growth
06/07/1995EP0656645A2 Field effect transistor with a sealed diffusion junction
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