| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/06/1995 | DE4447149A1 Completely planar, concave MOS transistor for VLSI circuit |
| 07/06/1995 | DE4400127A1 Capacitive acceleration sensor |
| 07/06/1995 | DE4343900A1 Semiconductor element used in thyristors |
| 07/05/1995 | EP0661756A1 Non-volatile memory cell with double polisilicon level |
| 07/05/1995 | EP0661755A1 High voltage semiconductor device having improved electrical ruggedness and reduced cell pitch |
| 07/05/1995 | EP0661754A2 A substrate providing a ferroelectric crystal thin film, its production method and a device using said substrate |
| 07/05/1995 | EP0661753A1 Semiconductor structure with field limiting ring and method for making |
| 07/05/1995 | EP0661751A1 CMOS device with high and low voltage transistors |
| 07/05/1995 | EP0661746A1 Microwave integrated circuit and their fabrication |
| 07/05/1995 | EP0661733A2 One dimensional silicon quantum wire devices and the method of manufacture thereof |
| 07/05/1995 | EP0661731A2 A single chamber CVD process for thin film transistors |
| 07/05/1995 | EP0661582A2 Liquid crystal display |
| 07/05/1995 | EP0661581A1 Active matrix type liquid crystal display apparatus |
| 07/05/1995 | EP0661556A2 Large area x-ray imager and method of fabrication |
| 07/05/1995 | EP0661244A2 Fabrication of thin film materials |
| 07/04/1995 | US5430595 Electrostatic discharge protection circuit |
| 07/04/1995 | US5430403 Field effect transistor with switchable body to source connection |
| 07/04/1995 | US5430324 High voltage transistor having edge termination utilizing trench technology |
| 07/04/1995 | US5430323 Injection control-type Schottky barrier rectifier |
| 07/04/1995 | US5430320 Thin film transistor having a lightly doped drain and an offset structure for suppressing the leakage current |
| 07/04/1995 | US5430317 Semiconductor device |
| 07/04/1995 | US5430316 VDMOS transistor with improved breakdown characteristics |
| 07/04/1995 | US5430315 Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current |
| 07/04/1995 | US5430314 Power device with buffered gate shield region |
| 07/04/1995 | US5430313 Transistor with an offset gate structure |
| 07/04/1995 | US5430311 Constant-voltage diode for over-voltage protection |
| 07/04/1995 | US5430310 Field effect transistor |
| 07/04/1995 | US5430309 Data processing system formed of a collective element of quantum boxes and method of operation thereof |
| 07/04/1995 | US5429993 Semiconductor accelerometer and method of its manufacture |
| 07/04/1995 | US5429986 Electrode forming process |
| 07/04/1995 | US5429983 Method of manufacturing semiconductor device |
| 07/04/1995 | US5429969 Process for forming electrically programmable read-only memory cell with a merged select/control gate |
| 07/04/1995 | US5429966 Method of fabricating a textured tunnel oxide for EEPROM applications |
| 07/04/1995 | US5429965 Method for manufacturing a semiconductor memory |
| 07/04/1995 | US5429964 Low on-resistance power MOS technology |
| 07/04/1995 | US5429962 Method for fabricating a liquid crystal display |
| 07/04/1995 | US5429961 Method for manufacturing a thin film transistor |
| 07/04/1995 | US5429959 Process for simultaneously fabricating a bipolar transistor and a field-effect transistor |
| 07/04/1995 | US5429957 Method of manufacturing an heterojunction bipolar transistor |
| 07/04/1995 | US5429953 Method of forming solid state suppressors with concave and diffused substitution regions |
| 07/04/1995 | US5429006 Semiconductor matrix type sensor for very small surface pressure distribution |
| 06/29/1995 | DE4446998A1 Semiconductor memory appts. using NAND, AND, dual-input NOR cells |
| 06/29/1995 | DE4446881A1 Durchgangsloch und Herstellungsverfahren eines Durchgangslochs Through-hole, and manufacturing method of a through hole |
| 06/29/1995 | DE4446850A1 Transistor mfg. process for semiconductor device prodn. |
| 06/29/1995 | DE4443593A1 Semiconductor device using transistor with silicide structure |
| 06/28/1995 | EP0660520A2 A bidirectional current blocking mosfet for battery disconnect switching including protection against reverse connected battery charger |
| 06/28/1995 | EP0660501A1 Generator motor for vehicles |
| 06/28/1995 | EP0660473A1 Quantum-well type semiconductor laser device having multi-layered quantum-well layer |
| 06/28/1995 | EP0660420A1 A linear field effect transistor |
| 06/28/1995 | EP0660419A2 Drain/source doping profile of high voltage transistor for sub-micron CMOS processes |
| 06/28/1995 | EP0660418A2 Conductor-insulator-semiconductor (CIS) transistor |
| 06/28/1995 | EP0660417A2 A method and structure of enhancing the current gain of bipolar junction transistors |
| 06/28/1995 | EP0660416A1 Semiconductor device with reduced high voltage termination area and high breakdown voltage |
| 06/28/1995 | EP0660415A1 Stacked high voltage transistor unit |
| 06/28/1995 | EP0660412A1 Switching element with memory provided with Schottky tunnelling barrier |
| 06/28/1995 | EP0660402A1 Integrated structure pad assembly for wire bonding on active area in power semiconductor devices, particularly with cellular structure, and manufacturing process therefor |
| 06/28/1995 | EP0660396A1 Power MOS device chip and package assembly |
| 06/28/1995 | EP0660395A2 Self-aligned contact with zero offset to gate |
| 06/28/1995 | EP0660118A1 Method of making bridge supported accelerometer structure |
| 06/28/1995 | EP0659298A1 Ohmic contact structure between platinum and silicon carbide |
| 06/28/1995 | EP0659282A1 Color filter system for display panels |
| 06/28/1995 | CA2139072A1 Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices |
| 06/27/1995 | US5428572 Program element for use in redundancy technique for semiconductor memory device |
| 06/27/1995 | US5428244 Metal silicide layer functions as electrode or as a wire |
| 06/27/1995 | US5428243 Bipolar transistor with a self-aligned heavily doped collector region and base link regions. |
| 06/27/1995 | US5428241 High breakdown voltage type semiconductor device |
| 06/27/1995 | US5428240 Source/drain structural configuration for MOSFET integrated circuit devices |
| 06/27/1995 | US5428238 Semiconductor memory cell having information storage transistor and switching transistor |
| 06/27/1995 | US5428237 Semiconductor device having an insulated gate transistor |
| 06/27/1995 | US5428234 Semiconductor device |
| 06/27/1995 | US5428232 Field effect transistor apparatus |
| 06/27/1995 | US5428231 Solid-state image device including charge-coupled devices having improved electrode structure |
| 06/27/1995 | US5428230 Reverse conducting gate turn-off thyristor |
| 06/27/1995 | US5428229 Pressure contact type MOS semiconductor device and fabrication method of the same |
| 06/27/1995 | US5428228 Method of operating thyristor with insulated gates |
| 06/27/1995 | US5428224 Field effect transistor |
| 06/27/1995 | US5427985 Amorphous, hydrogenated carbon as an insulator in device fabrication |
| 06/27/1995 | US5427976 Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon |
| 06/27/1995 | US5427975 Method of micromachining an integrated sensor on the surface of a silicon wafer |
| 06/27/1995 | US5427973 Method for production of SOI transistor device having a storage cell |
| 06/27/1995 | US5427972 Method of making a sidewall contact |
| 06/27/1995 | US5427971 Method for fabrication of semiconductor elements |
| 06/27/1995 | US5427967 Technique for making memory cells in a way which suppresses electrically conductive stringers |
| 06/27/1995 | US5427966 Process for fabricating a semiconductor device having floating gate and control gate electrodes |
| 06/27/1995 | US5427965 Method of fabricating a complementary heterojunction FET |
| 06/27/1995 | US5427964 Insulated gate field effect transistor and method for fabricating |
| 06/27/1995 | US5427963 Method of making a MOS device with drain side channel implant |
| 06/27/1995 | US5427962 Method of making a thin film transistor |
| 06/27/1995 | CA2059476C Electrically erasable phase change memory |
| 06/27/1995 | CA1336057C Formation of microstructures with removal of liquid by freezing and sublimation |
| 06/22/1995 | WO1995017041A1 Cross-conduction prevention circuit for power amplifier output stage |
| 06/22/1995 | WO1995017017A1 Electric bonding process on porous silicon |
| 06/22/1995 | WO1995017013A1 Drift-free avalanche diode |
| 06/22/1995 | WO1995017012A1 Refractory metal contact for a power device |
| 06/22/1995 | WO1995017009A1 Semiconductor device |
| 06/22/1995 | WO1995017008A1 Semiconductor device |
| 06/22/1995 | WO1995017005A1 Method for fabricating self-assembling microstructures |
| 06/22/1995 | DE4445796A1 Semiconductor device contg. MOSFET |
| 06/22/1995 | DE4417164C1 High voltage tripping diode used as stationary spark voltage distributor |
| 06/22/1995 | DE4415955A1 Lightly doped drain MOS transistor prodn. |