| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) | 
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| 07/25/1995 | US5436480 Integrated circuit interconnection programmable and erasable by a plurality of intersecting control traces  | 
| 07/25/1995 | US5436479 Electrically programmable integrated memory with only one transistor  | 
| 07/25/1995 | US5436476 CCD image sensor with active transistor pixel  | 
| 07/25/1995 | US5436475 Bipolar transistor for high power in the microwave range  | 
| 07/25/1995 | US5436474 Modulation doped field effect transistor having built-in drift field  | 
| 07/25/1995 | US5436473 Gate lead for center gate pressure assembled thyristor  | 
| 07/25/1995 | US5436470 Field effect transistor  | 
| 07/25/1995 | US5436469 Band minima transistor  | 
| 07/25/1995 | US5436468 Nonscattering  | 
| 07/25/1995 | US5436467 Superlattice quantum well thermoelectric material  | 
| 07/25/1995 | US5436205 Forming a tungsten silicide conductive layer over indium-gallium arsenide semiconductor layer, masking and pattering conductive layer by etching, redeposition silicide on side portion, removal of exposed silicide layer by etching  | 
| 07/25/1995 | US5436191 Quantum wire fabrication via photo induced evaporation enhancement during in situ epitaxial growth  | 
| 07/25/1995 | US5436184 Thin film transistor and manufacturing method thereof  | 
| 07/25/1995 | US5436182 Method of manufacturing thin film transistor panel  | 
| 07/25/1995 | US5436181 Method of self aligning an emitter contact in a heterojunction bipolar transistor  | 
| 07/25/1995 | US5436180 Method for reducing base resistance in epitaxial-based bipolar transistor  | 
| 07/25/1995 | US5436178 Method of making semiconductor device including MOS type field effect transistor  | 
| 07/25/1995 | US5435856 Multiple-quantum-well semiconductor structures with selective electrical contacts and method of fabrication  | 
| 07/20/1995 | WO1995019649A1 High value gate leakage resistor  | 
| 07/20/1995 | WO1995019647A1 Diode and production method thereof  | 
| 07/20/1995 | WO1995019646A1 Input/output transistors with optimized esd protection  | 
| 07/20/1995 | WO1995019572A1 Process for producing an acceleration sensor  | 
| 07/20/1995 | DE4415137C1 Semiconductor device esp. MOSFET  | 
| 07/20/1995 | DE4405631C1 Integrated device esp. FET  | 
| 07/20/1995 | DE4400842A1 MOS transistor having high degree of integration  | 
| 07/19/1995 | EP0663698A1 Semiconductor device and its manufacture  | 
| 07/19/1995 | EP0663697A1 Thin film semiconductor device, its manufacture, and display system  | 
| 07/19/1995 | EP0663695A2 Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes, and method of manufacturing the device  | 
| 07/19/1995 | EP0663693A1 Low thermal impedance integrated circuit  | 
| 07/19/1995 | EP0637402A4 Method of making a dual-poly non-volatile memory device using a third polysilicon layer.  | 
| 07/18/1995 | US5434825 Flash EEPROM system cell array with more than two storage states per memory cell  | 
| 07/18/1995 | US5434819 Semiconductor memory device having an automatically activated verify function capability  | 
| 07/18/1995 | US5434813 Semiconductor memory device and manufacturing method of the same  | 
| 07/18/1995 | US5434750 Partially-molded, PCB chip carrier package for certain non-square die shapes  | 
| 07/18/1995 | US5434686 Active matrix display device  | 
| 07/18/1995 | US5434589 TFT LCD display control system for displaying data upon detection of VRAM write access  | 
| 07/18/1995 | US5434448 Programmable contact structure  | 
| 07/18/1995 | US5434445 Junction-isolated high-voltage MOS integrated device  | 
| 07/18/1995 | US5434444 High breakdown voltage semiconductor device  | 
| 07/18/1995 | US5434443 Semiconductor switch including a power transistor integrated with a temperature sensor therefor  | 
| 07/18/1995 | US5434442 Field plate avalanche diode  | 
| 07/18/1995 | US5434440 Semiconductor device and method of manufacturing the same  | 
| 07/18/1995 | US5434435 Trench gate lateral MOSFET  | 
| 07/18/1995 | US5434433 Semiconductor device for a light wave  | 
| 07/18/1995 | US5434363 Multilayer printed circuits with protective layers and tantalum wires  | 
| 07/18/1995 | US5434103 Method of forming an electrical connection  | 
| 07/18/1995 | US5434097 Method for manufacturing an image sensor  | 
| 07/18/1995 | US5434095 Method for controlling electrical breakdown in semiconductor power devices  | 
| 07/18/1995 | US5434093 Inverted spacer transistor  | 
| 07/18/1995 | US5434092 Method for fabricating a triple self-aligned bipolar junction transistor  | 
| 07/18/1995 | US5434091 Method for making collector up bipolar transistors having reducing junction capacitance and increasing current gain  | 
| 07/13/1995 | WO1995019047A1 A self-aligned dual-bit split gate (dsg) flash eeprom cell  | 
| 07/13/1995 | WO1995019044A1 Felt having a dielectrically isolated gate connect  | 
| 07/13/1995 | WO1995019043A1 Fet having minimized parasitic gate capacitance  | 
| 07/13/1995 | DE4423558A1 Conductive layer esp. for MOSFET  | 
| 07/13/1995 | DE4342166A1 Integrated semiconductor device with thyristor  | 
| 07/12/1995 | EP0662720A2 Tunneling hot-electron transistor  | 
| 07/12/1995 | EP0662719A1 An apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices  | 
| 07/12/1995 | EP0662718A2 A method of decreasing the bandgap of silicon for bipolar heterojunction transistors  | 
| 07/12/1995 | EP0662717A2 High voltage/high beta semiconductor devices and methods of fabrication thereof  | 
| 07/12/1995 | EP0662707A1 Mos devices with drain-side channel implants  | 
| 07/12/1995 | EP0662706A2 Manufacture of thin-film transistors having self-aligned plural gates  | 
| 07/12/1995 | EP0662269A1 Controlled semiconductor capacitors  | 
| 07/12/1995 | EP0504170B1 Method of making silicon quantum wires  | 
| 07/12/1995 | CN1105145A Non-volatile semiconductor store and data programing method  | 
| 07/11/1995 | US5432749 Non-volatile memory cell having hole confinement layer for reducing band-to-band tunneling  | 
| 07/11/1995 | US5432739 Non-volatile sidewall memory cell method of fabricating same  | 
| 07/11/1995 | US5432634 Electromagnetic wave modulator with quantum well structure  | 
| 07/11/1995 | US5432551 Interline transfer image sensor  | 
| 07/11/1995 | US5432377 Dielectrically isolated semiconductor device and a method for its manufacture  | 
| 07/11/1995 | US5432376 Semiconductor devices containing power and control transistors  | 
| 07/11/1995 | US5432371 Monolithically integrated circuit  | 
| 07/11/1995 | US5432370 High withstand voltage M I S field effect transistor and semiconductor integrated circuit  | 
| 07/11/1995 | US5432368 For protecting an integrated circuit  | 
| 07/11/1995 | US5432367 Semiconductor device having sidewall insulating film  | 
| 07/11/1995 | US5432366 P-I-N MOSFET for ULSI applications  | 
| 07/11/1995 | US5432365 Semiconductor memory device  | 
| 07/11/1995 | US5432364 Output circuit device for charge transfer element  | 
| 07/11/1995 | US5432362 Resonant tunnel effect quantum well transistor  | 
| 07/11/1995 | US5432360 Semiconductor device including an anode layer having low density regions by selective diffusion  | 
| 07/11/1995 | US5432356 Semiconductor heterojunction floating layer memory device and method for storing information in the same  | 
| 07/11/1995 | US5432129 Method of forming low resistance contacts at the junction between regions having different conductivity types  | 
| 07/11/1995 | US5432126 Fabrication process of compound semiconductor device comprising L-shaped gate electrode  | 
| 07/11/1995 | US5432125 Method of manufacturing semiconductor device  | 
| 07/11/1995 | US5432122 Method of making a thin film transistor by overlapping annealing using lasers  | 
| 07/11/1995 | US5432110 Method for fabricating non-volatile semiconductor memory device having two-layered gate structure transistor  | 
| 07/11/1995 | US5432109 Device method for manufacturing a semiconductor memory  | 
| 07/11/1995 | US5432106 Manufacture of an asymmetric non-volatile memory cell  | 
| 07/11/1995 | US5432104 Method for fabricating a vertical bipolar transistor with reduced parasitic capacitance between base and collector regions  | 
| 07/11/1995 | US5432102 Method of making thin film transistor with channel and drain adjacent sidewall of gate electrode  | 
| 07/11/1995 | US5431773 Method of manufacturing semiconductor device  | 
| 07/11/1995 | US5431770 Semiconductor integrated circuits  | 
| 07/11/1995 | US5431126 Method of forming semiconductor crystal and semiconductor device  | 
| 07/11/1995 | US5431051 Tunnel effect acceleration sensor  | 
| 07/11/1995 | US5431050 Semiconductor sensor with nested weight portions for converting physical quantity into twisting strains  | 
| 07/06/1995 | WO1995018465A1 Three-terminal gate-controlled semiconductor switching device with rectifying-gate  | 
| 07/06/1995 | WO1995018463A1 Single crystal silicon on quartz  | 
| 07/06/1995 | WO1995018390A1 Low noise solid state fluorscopic radiation imager  | 
| 07/06/1995 | DE4447266A1 Prodn. of dynamic semiconductor storage device  | 
| 07/06/1995 | DE4447254A1 Prodn. of MOSFET used in semiconductor switches  |