Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1995
08/15/1995US5442198 Non-single crystal semiconductor device with sub-micron grain size
08/15/1995US5442194 Room-temperature tunneling hot-electron transistor
08/15/1995US5442191 Isotopically enriched semiconductor devices
08/15/1995US5441917 Method of laying out bond pads on a semiconductor die
08/15/1995US5441916 Method of manufacturing semiconductor device comprising interconnection
08/15/1995US5441911 Silicon carbide wafer bonded to a silicon wafer
08/15/1995US5441906 Insulated gate field effect transistor having a partial channel and method for fabricating
08/15/1995US5441905 Process of making self-aligned amorphous-silicon thin film transistors
08/15/1995US5441904 Covering silicon substrate with gate oxide film, then with polysilicon layer which is annealed to enlarge grain size, repeating cycle, then depositing tungsten silicide layer and etching
08/15/1995US5441901 Method for forming a carbon doped silicon semiconductor device having a narrowed bandgap characteristic
08/15/1995US5441768 Multi-step chemical vapor deposition method for thin film transistors
08/12/1995CA2115477A1 Esd input protection arrangement
08/10/1995WO1995021461A1 Turn-off power semiconductor component
08/10/1995WO1995021460A1 Mos-controlled thyristor
08/10/1995DE4419363C1 Integrated semiconductor device with thyristor function
08/10/1995DE4409875A1 Prodn. of MOST
08/10/1995DE4403520A1 Flash EEPROM with three trough region CMOS structure
08/10/1995DE4403431A1 Turn-off semiconductor component for GTO thyristor ignition stabilisation
08/09/1995EP0666604A1 Method of producing an electro-optical and/or photonic component
08/09/1995EP0666603A2 Laminated upper cladding structure for a light-emitting device and fabrication method
08/09/1995EP0666601A2 Turn-off semiconductor device
08/09/1995EP0666600A2 Power bipolar transistor
08/09/1995EP0666599A2 Metal programmed transistor array
08/09/1995EP0666597A1 Method for manufacturing a bipolar transistor for the protection of an integrated circuit against electrostatic discharges
08/09/1995EP0666590A2 Method of fabricating trenches in a semiconductor device
08/09/1995EP0665981A1 Process for fabricating layered superlattice materials and making electronic devices including same
08/09/1995EP0400153B1 Optical semiconductor device having a zero-crossing function
08/09/1995CN1106573A Double implanted laterally diffused mos device and method thereof
08/09/1995CN1106572A 半导体器件 Semiconductor devices
08/08/1995US5440518 Non-volatile memory circuits, architecture and methods
08/08/1995US5440510 Integrated circuit entirely protected against ultraviolet rays
08/08/1995US5440168 Thin-film transistor with suppressed off-current and Vth
08/08/1995US5440165 Semiconductor device with means for suppressing electric fields
08/08/1995US5440161 Semiconductor device having an SOI structure and a manufacturing method thereof
08/08/1995US5440160 High saturation current, low leakage current fermi threshold field effect transistor
08/08/1995US5440159 Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer
08/08/1995US5440158 Electrically programmable memory device with improved dual floating gates
08/08/1995US5440157 Semiconductor integrated-circuit capacitor having a carbon film electrode
08/08/1995US5440152 Having silicon emitter region, silicon/germanium base and collector regions with distribution of germanium concentration graded as function of depth; cutoff frequency restrained from lowering at higher collector current levels
08/08/1995US5440150 Non-crystalline silicon active device for large-scale digital and analog networks
08/08/1995US5440148 Quantum operational device
08/08/1995US5439846 Self-aligned method for forming contact with zero offset to gate
08/08/1995US5439841 High value gate leakage resistor
08/08/1995US5439840 Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
08/08/1995US5439837 Method of fabricating a thin-film transistor having an offset gate structure
08/08/1995US5439836 Method for producing a silicon technology transistor on a nonconductor
08/08/1995US5439832 Method for fabricating semiconductor device
08/08/1995US5439831 Low junction leakage MOSFETs
08/08/1995US5438952 Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer
08/08/1995US5438870 Rotation rate sensor
08/03/1995WO1995020825A1 Charge-coupled device array for spectroscopic detection
08/03/1995WO1995004265A3 Dielectrically isolated resonant microsensors
08/03/1995DE4409201A1 Prodn. of thin film transistor
08/02/1995EP0665598A2 Low capacitance floating diffusion structure for a solid state image sensor
08/02/1995EP0665597A1 IGBT and manufacturing process therefore
08/02/1995EP0665596A1 Mes field effect transistor possessing lightly doped drain and method for production thereof
08/02/1995EP0665595A1 MOS type semiconductor device
08/02/1995EP0665593A1 Semiconductor device
08/02/1995EP0665586A1 Manufacture of electronic devices comprising thin-film circuits
08/02/1995EP0665438A1 Vertically mounted accelerometer chip
08/02/1995EP0664925A1 Interconnection structure for integrated circuits and method for making same
08/02/1995EP0664896A1 A method for simulating distributed effects within a device such as a power semiconductor device
08/02/1995CN1106163A Electrode for semiconductor element and semiconductor device having the electrode and process for producing the same
08/01/1995US5438542 Nonvolatile semiconductor memory device
08/01/1995US5438537 Static random access memory which has a pair of thin film transistors and wherein the capacitance and resistance between the gate electrodes and the conductor layers are increased so as to reduce the time constant between them
08/01/1995US5438284 Basic logic circuit having multi-emitter transistor
08/01/1995US5438241 Single crystal silicon arrayed devices for display panels
08/01/1995US5438220 High breakdown voltage semiconductor device
08/01/1995US5438218 Semiconductor device with Shottky junction
08/01/1995US5438215 Power MOSFET
08/01/1995US5438212 Semiconductor device with heat dissipation structure
08/01/1995US5438211 Charge-transfer device having an improved charge-sensing section
08/01/1995US5438023 Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like
08/01/1995US5438018 Method of making semiconductor device by selective epitaxial growth
08/01/1995US5438007 Method of fabricating field effect transistor having polycrystalline silicon gate junction
07/1995
07/27/1995DE4428911A1 Forming silicon@ insulating film in semiconductor component
07/27/1995DE4401858A1 Forming ohmic contact on p-conductive semiconductor layer
07/27/1995DE19501556A1 Semiconductor component with trench structure
07/26/1995EP0664569A1 Microelectronics device
07/26/1995EP0664567A1 Microwave power transistor with double recess and its fabrication process
07/26/1995EP0664566A1 MOS transistor and method for making the same
07/26/1995EP0664565A2 Superconductor-normal conductor junction device
07/26/1995EP0664564A1 Integrated circuit including a protection against electrostatic discharges
07/26/1995EP0664473A1 Active matrix type display device and manufacturing method thereof
07/26/1995EP0664051A1 METHOD FOR FORMING THIN TUNNELING WINDOWS IN EEPROMs
07/25/1995US5436949 Charge transfer apparatus
07/25/1995US5436924 Semiconductor laser device
07/25/1995US5436795 Pressure transducer apparatus and method for making same
07/25/1995US5436581 Circuit arrangement for monitoring the drain current of a metal oxide semiconductor field effect transistor
07/25/1995US5436505 Titanium oxidation and diffusion resistance layer formed on titanium contact; used for diodes, transistors and thermistors
07/25/1995US5436499 High performance GaAs devices and method
07/25/1995US5436497 Semiconductor device having a plurality of vertical type transistors having non-intersecting interconnections
07/25/1995US5436491 Pressure sensor for high temperature vibration intense environment
07/25/1995US5436490 Semiconductor device having ferroelectrics layer
07/25/1995US5436489 Field effect transistor
07/25/1995US5436487 Output circuit having three power supply lines
07/25/1995US5436486 High voltage MIS transistor and semiconductor device
07/25/1995US5436484 Semiconductor integrated circuit device having input protective elements and internal circuits
07/25/1995US5436483 Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit
07/25/1995US5436481 MOS-type semiconductor device and method of making the same
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