Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1995
08/29/1995US5446688 Non-volatile semiconductor memory device
08/29/1995US5446616 Electrode structure and method for anodically-bonded capacitive sensors
08/29/1995US5446312 Vertical-gate CMOS compatible lateral bipolar transistor
08/29/1995US5446309 Semiconductor device including a first chip having an active element and a second chip having a passive element
08/29/1995US5446307 Microelectronic 3D bipolar magnetotransistor magnetometer
08/29/1995US5446306 Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR)
08/29/1995US5446304 Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate
08/29/1995US5446303 Fault-protected overvoltage switch with expanded signal range
08/29/1995US5446301 Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same
08/29/1995US5446300 Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
08/29/1995US5446299 Semiconductor random access memory cell on silicon-on-insulator with dual control gates
08/29/1995US5446298 Semiconductor memory device including a floating gate having an undoped edge portion proximate to a source portion of the memory device
08/29/1995US5446296 Semiconductor device
08/29/1995US5446294 Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
08/29/1995US5445999 Advanced technique to improve the bonding arrangement on silicon surfaces to promote uniform nitridation
08/29/1995US5445997 Patterning method
08/29/1995US5445991 Method for fabricating a semiconductor device using a porous silicon region
08/29/1995US5445987 Method of manufacturing a nonvolatile memory including a memory cell having a MISFET
08/29/1995US5445982 Method of fabricating nonvolatile semiconductor memory device
08/29/1995US5445980 Method of making a semiconductor memory device
08/29/1995US5445979 Method of making field effect compound semiconductor device with eaves electrode
08/29/1995US5445978 Method of making power device with buffered gate shield region
08/29/1995US5445977 Method of fabricating a Schottky field effect transistor
08/29/1995US5445976 Method for producing bipolar transistor having reduced base-collector capacitance
08/29/1995US5445974 Method of fabricating a high-voltage, vertical-trench semiconductor device
08/24/1995WO1995022842A1 Diode device to protect metal-oxide-metal capacitors
08/24/1995WO1995022838A1 Electromigration resistant metallization structures for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold
08/24/1995DE4405716A1 Mfg. ohmic contacts on n-doped compound semiconductor layer
08/24/1995DE19505947A1 Semiconductor device with improved barrier metal layer
08/24/1995DE19505272A1 Feldeffekttransistor und Verfahren zu dessen Herstellung Field effect transistor and method of producing the
08/24/1995CA2160234A1 Electromigration resistant metallization structures for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold
08/23/1995EP0668618A2 Resonant tunneling devices
08/23/1995EP0668617A2 Semiconductor device improved in resistance to breaking due to cosmic rays
08/23/1995EP0668616A2 Insulated gate semiconductor device and manufacturing method thereof
08/23/1995EP0668610A2 Method of manufacturing a schottky gate field effect transistor
08/23/1995EP0668528A1 Thin film field effect transistor array for use in active matrix liquid crystal display
08/23/1995EP0668526A2 A liquid crystal display device
08/23/1995EP0426877B1 Method of producing compound semiconductor devices
08/23/1995CN1107257A Thin film semiconductor integrated circuit and method of fabricating the same
08/23/1995CN1107255A A semiconductor device equipped with antifuse elements and a method for manufacturing an fpga
08/22/1995US5444655 Non-volatile semiconductor memory device with a small distribution width of cell transistor threshold voltage after erasing data
08/22/1995US5444557 Single crystal silicon arrayed devices for projection displays
08/22/1995US5444399 Mixer circuit
08/22/1995US5444302 Semiconductor device including multi-layer conductive thin film of polycrystalline material
08/22/1995US5444300 Semiconductor apparatus with heat sink
08/22/1995US5444297 Noise resistant semiconductor power module
08/22/1995US5444292 Integrated thin film approach to achieve high ballast levels for overlay structures
08/22/1995US5444286 Packaged semiconductor pressure sensor including lead supports within the package
08/22/1995US5444284 Semiconductor device including polysilicon semiconductor element and MOS-FET as the element thereof
08/22/1995US5444283 Dopant-diffusion buffered buried contact module for integrated circuits
08/22/1995US5444282 Semiconductor device and a method of manufacturing thereof
08/22/1995US5444281 Charge transfer device capable of suppressing reset noise
08/22/1995US5444279 Floating gate memory device having discontinuous gate oxide thickness over the channel region
08/22/1995US5444277 Solid imaging pick-up element
08/22/1995US5444273 MOSFET controlled thyristor
08/22/1995US5444272 Three-terminal thyristor with single MOS-gate controlled characteristics
08/22/1995US5444271 Conductivity-modulated semiconductor device with high breakdown voltage
08/22/1995US5444267 Quantum device utilizing the quantum effect
08/22/1995US5444219 Temperature sensing device and a temperature sensing circuit using such a device
08/22/1995US5444191 Information processing apparatus and device for use in same
08/22/1995US5444186 Multilayer conductive wire for semiconductor device and manufacturing method thereof
08/22/1995US5444017 Method of making cBN semiconductor device having an ohmic electrode
08/22/1995US5444016 Forming n and p type regions on gallium arsenide epitaxial structure, doping p type reginon with beryllium and a dopant, activating both reginons by anneling, depositing nickel, then germenium on nickel and tungsten on germenium
08/22/1995US5444011 Forming polysilicon layer on semiconductor substrate, forming yttrium or hafnium lower electrode, forming dielectric metal oxide film, annealing so at thinner portions of film lower electrode is oxidized more heavily, forming upper electrode
08/22/1995US5444004 CMOS process compatible self-alignment lateral bipolar junction transistor
08/22/1995US5444002 Method of fabricating a short-channel DMOS transistor with removable sidewall spacers
08/22/1995US5443999 Method of fabricating a flash control device which uses cascade-connected thyristor and MOSFET
08/22/1995US5443996 Forming metal layer on insulator, forming silicon layer, masking and etching silicon to form connecting strip, forming second metal layer, heating to form nonsilicided metal over strip of metal silicide, removing metal, reheating silicide
08/22/1995US5443994 Bipolar transistor
08/22/1995US5443992 Method for manufacturing an integrated circuit having at least one MOS transistor
08/22/1995US5443685 Surface treating substrate by applying erodible material and exposing to radiation to cause energy variations that result in angular tapers; etching
08/22/1995CA2040396C Semiconductor device with reduced time-dependent dielectric failures
08/18/1995EP0676088A4 Non-volatile semiconductor memory cell.
08/17/1995WO1995022176A1 Electromagnetic radiation imaging device using dual gate thin film transistors
08/17/1995WO1995022174A1 High-voltage cmos transistors for a standard cmos process
08/17/1995DE4423068C1 Silicon carbide FETs
08/17/1995CA2199013A1 Process for manufacture of mos gated device with reduced mask count
08/16/1995EP0667646A1 Piezoelectric/electrostrictive film element and method of producing the same
08/16/1995EP0667644A1 Semiconductor device for storing multiple-state level data and manufacturing method thereof
08/16/1995EP0667641A1 Linear dual switch module
08/16/1995EP0667588A1 Semiconductor neural circuit device
08/16/1995EP0667060A1 Electronic component.
08/16/1995EP0667038A1 Flash eeprom
08/16/1995EP0667037A1 Device and method for improving current carrying capability in a semiconductor device
08/16/1995EP0667035A1 Single diffusion process for fabricating semiconductor devices
08/16/1995EP0667026A1 Flash memory system, and methods of constructing and utilizing same
08/15/1995US5442585 Device having dielectric thin film
08/15/1995US5442227 Field effect transistor having a low threshold voltage shift
08/15/1995US5442226 Bipolar transistor having an emitter electrode formed of polysilicon
08/15/1995US5442223 Semiconductor device with stress relief
08/15/1995US5442219 Semiconductor device for controlling electric power
08/15/1995US5442216 Semiconductor device having active device cells and a monitor cell
08/15/1995US5442215 Thin film transistor having an asymmetrical lightly doped drain structure
08/15/1995US5442214 VDMOS transistor and manufacturing method therefor
08/15/1995US5442211 One-transistor one-capacitor memory cell structure for DRAMs
08/15/1995US5442209 Synapse MOS transistor
08/15/1995US5442207 Charge coupled device
08/15/1995US5442204 Diode laser
08/15/1995US5442200 Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
08/15/1995US5442199 Heat resistance; vapor deposition of crystalline diamond film on substrate
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