Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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10/04/1995 | EP0675545A2 Insulated gate thyristor |
10/04/1995 | EP0675544A1 Method of manufacturing a short channel insulated field effect transistor; and corresponding transistor |
10/04/1995 | EP0675543A2 Semiconductor device including protection means and manufacturing method thereof |
10/04/1995 | EP0675530A2 Manufacturing method of a field effect semiconductor device |
10/04/1995 | EP0675529A2 Process for manufacturing vertical MOS transistors |
10/04/1995 | EP0675527A1 Manufacturing process for obtaining bipolar transistors with controlled storage time |
10/04/1995 | EP0675502A2 Multiple sector erase flash EEPROM system |
10/04/1995 | EP0675349A2 Pressure transducer apparatus and method for making same |
10/04/1995 | EP0674806A1 Silicon on diamond circuit structure and method of making same |
10/04/1995 | EP0674799A1 Memory array with field oxide islands eliminated and method. |
10/04/1995 | EP0674798A1 Memory device |
10/04/1995 | CN1109648A A.C. generator for vehicles |
10/04/1995 | CN1109639A Tunnel diode with several permanent switching states |
10/03/1995 | US5455793 Electrically reprogrammable EPROM cell with merged transistor and optimum area |
10/03/1995 | US5455792 Flash EEPROM devices employing mid channel injection |
10/03/1995 | US5455791 Method for erasing data in EEPROM devices on SOI substrates and device therefor |
10/03/1995 | US5455790 High density EEPROM cell array which can selectively erase each byte of data in each row of the array |
10/03/1995 | US5455450 Semiconductor device comprising a lateral bipolar transistor |
10/03/1995 | US5455449 Offset lattice bipolar transistor architecture |
10/03/1995 | US5455448 For mounting on a heat sink |
10/03/1995 | US5455447 Vertical PNP transistor in merged bipolar/CMOS technology |
10/03/1995 | US5455442 COMFET switch and method |
10/03/1995 | US5455441 Semiconductor device having a structure for accelerating carriers |
10/03/1995 | US5455440 Method to reduce emitter-base leakage current in bipolar transistors |
10/03/1995 | US5455439 Semiconductor device which moderates electric field concentration caused by a conductive film formed on a surface thereof |
10/03/1995 | US5455434 Thyristor with breakdown region |
10/03/1995 | US5455432 Carbide interlayer |
10/03/1995 | US5455430 Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
10/03/1995 | US5455429 Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material |
10/03/1995 | US5455190 Method of making a vertical channel device using buried source techniques |
10/03/1995 | US5455188 Process for fabricating a lateral bipolar junction transistor |
10/03/1995 | US5455186 Method for manufacturing an offset lattice bipolar transistor |
10/03/1995 | US5455185 Producing buried collector in silicon substrate, producing insulation structure at surface of substrate, implanting boron inside insulation structure, depositing layer of borosilicate glass, etching, forming base edges |
10/03/1995 | US5455184 Method of making high speed EPROM containing graded source/drain profile |
10/03/1995 | US5455183 Reduction of current leakage between barrier pad and wafer |
10/03/1995 | US5455182 Semiconductor process for forming channel layer with passivated covering |
10/03/1995 | US5454915 Electrochemical etching |
10/03/1995 | US5454880 Conjugated polymer-acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
09/29/1995 | WO1995026567A1 Method for fabricating suspension members for micromachined sensors |
09/28/1995 | WO1995025983A1 Methods of fabricating active matrix pixel electrodes |
09/28/1995 | DE4409006A1 High-speed vertical MOS-FET prodn., useful in highly IC |
09/28/1995 | DE19510922A1 Verfahren zur Herstellung eines Halbleiterbauelements, Verfahren zur Reinigung einer Kristalloberfläche eines Halbleiters sowie Halbleiterbauelement A process for producing a semiconductor device, method for cleaning a surface of a semiconductor crystal and semiconductor device |
09/28/1995 | DE19509179A1 Acceleration sensor for vibration detection-compensation in office-laboratory-workshop equipment |
09/28/1995 | DE19502392A1 FET mfg. method |
09/28/1995 | CA2186160A1 Methods of fabricating active matrix pixel electrodes |
09/27/1995 | EP0674348A1 II-VI Group compound semiconductor device and method for manufacturing the same |
09/27/1995 | EP0674347A1 II-VI Group compound semiconductor device and method for manufacturing the same |
09/27/1995 | EP0674017A1 Gallium oxide coatings for opto-electronic devices |
09/27/1995 | EP0673548A1 Bipolar transistor |
09/27/1995 | EP0673311A1 C-axis perovskite thin films grown on silicon dioxide |
09/27/1995 | EP0472592B1 Low trigger voltage scr protection device and structure |
09/27/1995 | CN1109220A Semiconductor device and method for manufacturing the same |
09/27/1995 | CN1109212A Semiconductor device and method for manufacturing the same |
09/27/1995 | CN1109211A A method for manufacturing a semiconductor device |
09/26/1995 | US5453858 Electro-optical device constructed with thin film transistors |
09/26/1995 | US5453856 Liquid crystal display with gate lines connected with a doped semiconductor layer where they cross data lines |
09/26/1995 | US5453640 Semiconductor integrated circuit having MOS memory and bipolar peripherals |
09/26/1995 | US5453635 Lightly doped drain transistor device having the polysilicon sidewall spacers |
09/26/1995 | US5453634 Non-volatile semiconductor device |
09/26/1995 | US5453631 Field effect transistor having a multi-layer channel |
09/26/1995 | US5453627 Quantum interference device and complementary logic circuit utilizing thereof |
09/26/1995 | US5453404 Method for making an interconnection structure for integrated circuits |
09/26/1995 | US5453393 Method for forming a high density EEPROM cell array with improved access time |
09/26/1995 | US5453390 Method of producing semiconductor device with current detecting function |
09/26/1995 | US5453389 Defect-free bipolar process |
09/26/1995 | US5453388 Method of making an EEPROM |
09/26/1995 | US5453387 Fabrication method of semiconductor device with neighboring n- and p-type regions |
09/26/1995 | US5452610 Mass-flow sensor |
09/21/1995 | WO1995025350A1 Eeprom cell with the drain diffusion region self-aligned to the tunnel oxide region and method of manufacture |
09/21/1995 | DE4409687A1 Semiconductor pressure sensor |
09/21/1995 | DE19509338A1 Acceleration sensor for airbag, ABS, navigation system, yaw rate, pressure measurement |
09/21/1995 | DE19509160A1 MISFET semiconductor acceleration sensor |
09/20/1995 | EP0673072A2 Bipolar semiconductor devices |
09/20/1995 | EP0673070A2 Semiconductor integrated circuit device with elements isolated by trenches |
09/20/1995 | EP0673068A1 Overvoltage protection device in integrated circuits |
09/20/1995 | EP0673037A1 Non-volatile semiconductor memory device |
09/20/1995 | EP0672302A1 IMPROVED STRUCTURE FOR CdSe TFT |
09/20/1995 | EP0672301A1 Thin film transistor having a triple layer dielectric gate insulator, method of fabricating such a thin film transistor and an active matrix display having a plurality of such thin film transistors |
09/20/1995 | EP0672299A1 Transistor fabrication methods and methods of forming multiple layers of photoresist |
09/20/1995 | CN1108817A Varactor and method of forming |
09/20/1995 | CN1108816A Switching element with memory provided with schottky tunnelling barrier |
09/20/1995 | CN1108815A High efficiency electrically adjustable width field effect transistor and method therefor |
09/20/1995 | CN1108814A Transistor with common base region |
09/20/1995 | CN1108804A Semiconductor device and method of manufacturing the same |
09/19/1995 | US5452250 Non-volatile register system utilizing thin-film floating-gate amorphous transistors |
09/19/1995 | US5452248 Method of operating a nonvolatile semiconductor memory device |
09/19/1995 | US5452178 Structure and method of making a capacitor for an intergrated circuit |
09/19/1995 | US5451819 Semiconductor device having conductive plug projecting from contact hole and connected at side surface thereof to wiring layer |
09/19/1995 | US5451807 Metal oxide semiconductor field effect transistor |
09/19/1995 | US5451806 Method and device for sensing a surface temperature of an insulated gate semiconductor device |
09/19/1995 | US5451805 VDMOS transistor with reduced projective area of source region |
09/19/1995 | US5451803 Semiconductor memory device and method of manufacturing the same |
09/19/1995 | US5451802 Charge transfer device having a high-resistance electrode and a low-resistance electrode |
09/19/1995 | US5451800 Metal oxide semiconductor heterojunction field effect transistor (MOSHFET) |
09/19/1995 | US5451799 MOS transistor for protection against electrostatic discharge |
09/19/1995 | US5451798 Semiconductor device and its fabrication method |
09/19/1995 | US5451797 Method of fabricating a silicon carbide vertical MOSFET and device |
09/19/1995 | US5451774 High density, three-dimensional, intercoupled optical sensor circuit |
09/19/1995 | US5451545 Process for forming stable local interconnect/active area silicide structure VLSI applications |
09/19/1995 | US5451538 Method for forming a vertically integrated dynamic memory cell |