Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1995
09/19/1995US5451536 Power MOSFET transistor
09/19/1995US5451535 Method for manufacturing a memory cell
09/19/1995US5451533 Bidirectional blocking lateral MOSFET with improved on-resistance
09/19/1995US5451531 Method of fabricating an insulated gate semiconductor device
09/19/1995US5450754 Pressure sensor
09/14/1995WO1995024736A1 High vertical aspect ratio thin film structures
09/14/1995WO1995024554A2 A turbine engine ignition exciter circuit
09/14/1995DE4413822A1 Charge carrier injection transistor
09/14/1995DE4406769A1 Process for contacting silicon carbide
09/14/1995DE19508485A1 Prodn. of semiconductor sensor
09/14/1995DE19507317A1 Connection assembly for semiconductor chip
09/13/1995EP0671769A2 Insulated gate field effect transistor
09/13/1995EP0671765A1 Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like
09/13/1995EP0671762A2 Reduction of base-collector junction parasitic capacitance of heterojunction bipolar transistors
09/13/1995EP0671760A2 A method of fabricating a semiconductor device using high dose implantation
09/13/1995EP0671759A2 Low junction leakage MOSFETs
09/13/1995EP0671629A2 Semiconductor acceleration sensor and manufacturing method thereof
09/13/1995EP0671056A1 Power mosfet in silicon carbide
09/13/1995CN1108434A Semiconductor device and a manufacturing method for the same
09/13/1995CN1108433A Capacitor having a metal-oxide dielectric
09/12/1995USRE35036 Method of making symmetrically controlled implanted regions using rotational angle of the substrate
09/12/1995US5449949 Monolithic integrated semiconductor device
09/12/1995US5449941 Semiconductor memory device
09/12/1995US5449940 Semiconductor integrated circuit having improved protection element
09/12/1995US5449938 MOS-controlled power semiconductor component
09/12/1995US5449937 Field effect transistor with short channel and manufacturing method therefor
09/12/1995US5449936 High current MOS transistor bridge structure
09/12/1995US5449935 Semiconductor device including non-volatile memories
09/12/1995US5449933 Ferroelectric thin film element
09/12/1995US5449932 Field effect transistor having gate and source regions in recesses
09/12/1995US5449930 High power, compound semiconductor device and fabrication process
09/12/1995US5449929 IPG transistor semiconductor integrated circuit device
09/12/1995US5449928 Compound semiconductor substrate having a hetero-junction and a field-effect transistor using the same
09/12/1995US5449927 CdZnTe and HgCdTe layers
09/12/1995US5449925 Argon ions
09/12/1995US5449922 Bipolar heterojunction diode
09/12/1995US5449642 Method of forming metal-disilicide layers and contacts
09/12/1995US5449631 Prevention of agglomeration and inversion in a semiconductor salicide process
09/12/1995US5449629 Method for fabricating a semiconductor memory device having a floating gate with improved insulation film quality
09/12/1995US5449628 Method of making semiconductor device having a short gate length
09/12/1995US5449627 Lateral bipolar transistor and FET compatible process for making it
09/12/1995US5449561 Intermetallics
09/12/1995CA1336949C Method for forming crystal and crystal article obtained by said method
09/08/1995WO1995024057A2 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
09/08/1995WO1995024055A1 Silicon carbide-based mis structure with high latch-up resistance
09/08/1995CA2184724A1 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
09/07/1995DE4430812C1 Prodn. of ion-sensitive FET with contact at back
09/07/1995DE19507143A1 Fluid-tight semiconductor pressure sensor mfr.
09/07/1995DE19506155A1 Semiconductor device with capacitor
09/06/1995EP0670604A2 MOS thin-film transistors with a drain offset region
09/06/1995EP0670603A1 Semiconductor device comprising at least one IGBT and a diode
09/06/1995EP0670602A1 Field effect transistor having capacitor between source and drain electrodes
09/06/1995EP0670601A2 Insulated gate-type bipolar transistor
09/06/1995EP0670600A2 Insulated gate-type bipolar transistor
09/06/1995EP0670593A2 II-VI semiconductor device and blue-green laser diode
09/06/1995EP0670592A2 Semiconductor devices and their manufacture utilizing crystal orientation dependence of doping
09/06/1995EP0670589A1 Method for manufacturing a substrate for manufacturing silicon semiconductor elements
09/06/1995EP0465573B1 Semiconductor transducer or actuator utilizing corrugated supports
09/06/1995CN1108004A Transistor and process for fabricating the same
09/05/1995US5448513 Capacitorless DRAM device on silicon-on-insulator substrate
09/05/1995US5448384 Active matrix liquid crystal display device having discharge elements connected between input terminals and common terminal
09/05/1995US5448104 Bipolar transistor with base charge controlled by back gate bias
09/05/1995US5448101 Semiconductor device having P channel high voltage transistors with improved breakdown voltages
09/05/1995US5448100 Integrated circuit
09/05/1995US5448096 Semiconductor device with reduced stress applied to gate electrode
09/05/1995US5448094 Concave channel MOS transistor and method of fabricating the same
09/05/1995US5448093 Micro MIS type FET and manufacturing process therefor
09/05/1995US5448092 Insulated gate bipolar transistor with current detection function
09/05/1995US5448091 Method of making contact alignment for nonvolatile memory devices
09/05/1995US5448089 Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range
09/05/1995US5448087 Heterojunction bipolar transistor with graded base doping
09/05/1995US5448086 Field effect transistor
09/05/1995US5448085 Limited current density field effect transistor with buried source and drain
09/05/1995US5448084 Field effect transistors on spinel substrates
09/05/1995US5448083 Insulated-gate semiconductor device
09/05/1995US5448081 Lateral power MOSFET structure using silicon carbide
09/05/1995US5447877 Method of manufacturing nonvolatile semiconductor memory device
09/05/1995US5447876 Method of making a diamond shaped gate mesh for cellular MOS transistor array
09/05/1995US5447875 Self-aligned silicided gate process
09/05/1995US5447874 Multilayer element with barriers, dielectrics, masking and polishing
09/05/1995US5447873 Method of making a universal quantum dot logic cell
09/05/1995US5447601 Method of manufacturing a motion sensor
09/05/1995US5447067 Acceleration sensor and method for manufacturing same
08/1995
08/31/1995WO1995023433A1 Semiconductor device with superlattice structure
08/31/1995WO1995023397A2 Method of manufacturing a reflective display
08/31/1995DE4406085A1 Halbleitervorrichtung Semiconductor device
08/31/1995DE4402877A1 Durch MOS-Gate schaltbares Leistungshalbleiterbauelement By MOS gate switchable power semiconductor component
08/31/1995DE19506386A1 Semiconductor device e.g. IGBT
08/30/1995EP0669659A2 Thyristor and method of fabricating the same
08/30/1995EP0669658A2 Field effect type semiconductor device and manufacturing method thereof
08/30/1995EP0669657A2 Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers
08/30/1995EP0669656A2 Source/drain of MISFET in semiconductor device and method of manufacturing the same
08/30/1995EP0669653A1 Power semiconductor module and circuit arrangement with at least two semiconductor modules
08/30/1995EP0669652A1 Pressure contact type semiconductor device
08/30/1995EP0669650A2 Container for semiconductor device and method for manufacturing
08/30/1995EP0669647A2 Method for making a bipolar transistor
08/30/1995EP0669537A1 Integrated semiconductor device
08/30/1995EP0428738B1 Method of making complementary semiconductor integrated circuit devices
08/30/1995CN1107611A Semiconductor device having a reducing/oxidizing deviceive material and a process for forming the...
08/30/1995CN1029652C Threshold switching device
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