Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1995
10/25/1995EP0678920A1 Semiconductor device with mesa structure
10/25/1995EP0678919A1 Semiconductor device having input protection circuit
10/25/1995EP0678906A2 Method of self aligning an emitter contact in a heterojunction bipolar transistor
10/25/1995EP0678904A1 Multicut wafer saw process
10/25/1995EP0678219A1 Spiral edge passivation structure for semiconductor devices
10/25/1995CN1110833A Power semiconductor module and circuit arrangement comprising at least two power semiconductor switcmiconduc
10/24/1995US5461584 Semiconductor sensor device
10/24/1995US5461250 SiGe thin film or SOI MOSFET and method for making the same
10/24/1995US5461249 Nonvolatile semiconductor memory device and manufacturing method therefor
10/24/1995US5461247 Load resistance structure for source follower in charge transfer device
10/24/1995US5461245 Article comprising a bipolar transistor with floating base
10/24/1995US5461244 FET having minimized parasitic gate capacitance
10/24/1995US5461242 Insulated gate static induction thyristor with a split gate type shorted cathode structure
10/24/1995US5461005 Method of forming silicide in integrated circuit manufacture
10/24/1995US5460997 Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes
10/24/1995US5460995 Fully CMOS-type SRAM device and method for fabricating the same
10/24/1995US5460994 Semiconductor device having vertical conduction transistors and cylindrical cell gates
10/24/1995US5460992 Fabricating non-volatile memory device having a multi-layered gate electrode
10/24/1995US5460989 Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method of the same
10/24/1995US5460987 Method of making field effect transistor structure of a diving channel device
10/24/1995US5460986 Process for making a power MOSFET device and structure
10/24/1995US5460985 Production method of a verticle type MOSFET
10/24/1995US5460983 Method for forming isolated intra-polycrystalline silicon structures
10/24/1995US5460982 Method for manufacturing lateral bipolar transistors
10/24/1995US5460981 Semiconductor device having increased current capacity
10/24/1995US5460044 Semiconductor acceleration detecting apparatus
10/21/1995CA2146912A1 Semiconductor devices having a mesa structure and method of fabrication for improved surface voltage breakdown characteristics
10/19/1995WO1995028007A1 Semiconducteur strain-measuring converter
10/19/1995WO1995028003A1 Semiconductor devices and methods
10/19/1995WO1995028001A2 Manufacture of electronic devices comprising thin-film transistors with laterally separated drain and graded doping
10/19/1995WO1995027982A1 Non-volatile memory
10/19/1995DE4412475A1 Metall-Halbleiter-Diode und Verfahren zur Herstellung von Metall-Halbleiter-Dioden Metal-semiconductor diode and methods for the production of metal-semiconductor diodes
10/19/1995DE4410354A1 Planar structure power semiconductor element for electric drive circuit
10/18/1995EP0677879A1 Light trigger type semiconductor device
10/18/1995EP0677878A2 Double-epitaxy heterojunction bipolar transistors for high speed performance
10/18/1995EP0677877A2 Insulating gate type semiconductor device and power inverter using such a device
10/18/1995EP0677876A1 High and low voltage CMOS device and method of fabrication
10/18/1995EP0677875A1 A CMOS compatible lateral bipolar transistor
10/18/1995EP0677874A1 Default indicator for a protection component
10/18/1995EP0677869A1 Planarization process for the manufacturing of integrated circuits, particularly for non-volatile semiconductor memory devices
10/18/1995EP0677868A1 A thin film for a multilayer semiconductor device for improving thermal stability and a method thereof
10/18/1995EP0677207A1 Single crystal silicon on quartz
10/17/1995US5459509 Method for transferring charge, charge transfer device and solid state image sensing device using the same
10/17/1995US5459354 Semiconductor device with improved insulation of wiring structure from a gate electrode
10/17/1995US5459351 Apparatus for mounting an absolute pressure sensor
10/17/1995US5459347 Method of making field-effect semiconductor device on SOI
10/17/1995US5459344 Stacked capacitor type semiconductor memory device and manufacturing method thereof
10/17/1995US5459343 Back gate FET microwave switch
10/17/1995US5459339 Double gate semiconductor device and control device thereof
10/17/1995US5459338 Gate turn-off thyristor and power convertor using the same
10/17/1995US5459334 Negative absolute conductance device and method
10/17/1995US5459331 Contains a plurality of very thin gallium arsenide layers through which most of operating current passes
10/17/1995US5459107 Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures
10/17/1995US5459097 Method for selectively growing aluminum-containing layers
10/17/1995US5459091 Method for fabricating a non-volatile memory device
10/17/1995US5459090 Semiconductor device and method for forming the same
10/17/1995US5459089 Method of fabricating high voltage silicon carbide MESFETs
10/17/1995US5459088 Method for making a thin film transistor
10/17/1995US5459087 Gallium arsenide metal-Schottky gate field effect transistor; electron beam evaporation; heat treatment of epitaxial layer to recover damage; tungsten silicide layer; multi-layer metals
10/17/1995US5459084 Method for fabricating hetero-junction bipolar transistor having reduced base parasitic resistance
10/12/1995WO1995027310A1 High voltage charge pump using low voltage type transistors
10/12/1995WO1995027306A1 Angled lateral pocket implants on p-type semiconductor devices
10/11/1995EP0676837A1 Method for shifting the wavelength of a semiconductor quantum well
10/11/1995EP0676816A1 Flash - EEPROM memory array and biasing method thereof
10/11/1995EP0676815A1 Metal-oxide semiconductor device with a substrate contact structure
10/11/1995EP0676814A2 Trench semiconductor device and process of producing same
10/11/1995EP0676813A2 Gate turnoff thyristor and method of fabricating the same
10/11/1995EP0676812A2 Method and device for isolating active regions of semiconductor power devices
10/11/1995EP0676811A1 EEPROM cell with isolation transistor and methods for making and operating the same
10/11/1995EP0676810A2 Insulated gate field effect transistor and method of fabricating
10/11/1995EP0676809A2 Insulated gate field effect transistor and method of fabricating
10/11/1995EP0676802A1 a method of manufacturing a semiconductor device with a buried junction
10/11/1995EP0676801A2 Extended drain resurf lateral DMOS devices
10/11/1995EP0676799A2 Extended drain resurf lateral DMOS devices
10/11/1995EP0676798A2 Insulated gate field effect transistor with assymetric channel and method for fabricating
10/11/1995EP0676628A2 Stress isolated semiconductive pressure sensor
10/11/1995EP0676384A2 Perovskite containing composite material, process for its preparation, electronic component and module
10/11/1995EP0676089A1 Field-effect semiconductor component
10/11/1995EP0676088A1 Non-volatile semiconductor memory cell
10/11/1995EP0664925A4 Interconnection structure for integrated circuits and method for making same.
10/11/1995CN1110004A A method for manufacturing a semiconductor device
10/11/1995CN1030021C Semiconductor device and method of manufacturing
10/10/1995US5457771 Integrated circuit with non-volatile, variable resistor, for use in neuronic network
10/10/1995US5457348 High-current integrated circuit with wiring for minimized on-resistance
10/10/1995US5457345 Used to connect a lead-tin alloy solder to a semiconductor substrate
10/10/1995US5457338 Process for manufacturing isolated semi conductor components in a semi conductor wafer
10/10/1995US5457335 Floating gate FET with hydrogen barrier shield
10/10/1995US5457332 Process for manufacturing integrated circuits with juxtaposed electrodes and corresponding integrated circuit
10/10/1995US5457329 Voltage-driven thyristor
10/10/1995US5457070 Method of forming a step compensated semiconductor device
10/10/1995US5456117 Pressure sensor apparatus and method of manufacturing wherein the silicon-crystal substrate of the sensor has inclined crystallographic axes and gage resistors formed in a cavity of the substrate
10/07/1995CA2146407A1 Device for shifting the wavelength in a semiconductor quantum well structure
10/05/1995WO1995026585A1 Quantum-layer structure
10/05/1995WO1995026561A1 Electrode structure and method for anodically-bonded capacitive sensors
10/05/1995EP0691035A4 Linear voltage-controlled resistance element
10/05/1995DE19511382A1 Insulated gate thyristor for electrical power switch
10/04/1995EP0675584A1 Power output stage with limited current absorption during high-impedance phase
10/04/1995EP0675549A1 Superlattice avalanche photodiode
10/04/1995EP0675547A1 Electrically programmable memory cell
10/04/1995EP0675546A2 Method of fabrication of a single electron device
1 ... 1960 1961 1962 1963 1964 1965 1966 1967 1968 1969 1970 1971 1972 1973 1974 1975 1976 1977 1978 1979 1980 ... 2182