| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/16/1996 | US5536588 Thin film with dye molecules |
| 07/16/1996 | CA2039415C Buried channel heterojunction field effect transistor |
| 07/11/1996 | WO1996021251A1 Minority carrier device |
| 07/11/1996 | WO1996021249A1 Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
| 07/11/1996 | WO1996021246A1 Semiconductor device having a passivation layer |
| 07/11/1996 | WO1996021157A1 A micromechanical accelerometer |
| 07/11/1996 | EP0729647A4 Diamond shaped gate mesh for cellular mos transistor array |
| 07/10/1996 | EP0721241A2 Semiconductor quantum well structure and semiconductor device using the same |
| 07/10/1996 | EP0721222A2 A high speed bipolar transistor |
| 07/10/1996 | EP0721221A2 FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures |
| 07/10/1996 | EP0721218A1 Power integrated circuit |
| 07/10/1996 | EP0721217A2 CMOS integrated circuits |
| 07/10/1996 | EP0721216A2 A soft metal conductor and method of making |
| 07/10/1996 | EP0721215A2 Forming array with metal scan lines to control semiconductor gatelines |
| 07/10/1996 | EP0721214A2 Circuitry with gate line crossing semiconductor line at two or more channels |
| 07/10/1996 | EP0721211A2 Semiconductor device and method of manufacturing the same |
| 07/10/1996 | EP0720779A1 A transferred electron effect device |
| 07/10/1996 | EP0720748A1 Integrated micromechanical sensor device and process for producing it |
| 07/10/1996 | CN1126374A Semiconductor device and process for fabricating the same |
| 07/10/1996 | CN1126373A Unlostable semiconductor memory device and method of correcting over inputing |
| 07/10/1996 | CN1126372A Short circuit structure on side of positive pole of unsymetric silicon brake tube |
| 07/10/1996 | CN1032286C Thin-film-transistor for semiconductor memory device and fabricating method thereof |
| 07/09/1996 | US5535167 Non-volatile memory circuits, architecture |
| 07/09/1996 | US5535158 Non-volatile semiconductor memory device and method for erasure and production thereof |
| 07/09/1996 | US5535154 Semiconductor memory device with CMOS-inverter storage cells |
| 07/09/1996 | US5534723 Semiconductor integrated circuit device having output and internal circuit MISFETS |
| 07/09/1996 | US5534722 Insulator substrate for a light valve device having an electrostatic protection region |
| 07/09/1996 | US5534721 Lateral semiconductor device |
| 07/09/1996 | US5534716 Semiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier direction |
| 07/09/1996 | US5534714 Integrated field effect transistor and resonant tunneling diode |
| 07/09/1996 | US5534713 Silicon-germanium layers, relaxed layers alternating with layers under tensile and compressive strain |
| 07/09/1996 | US5534455 Method for protecting a stacked gate edge in a semiconductor device from self aligned source (SAS) etch |
| 07/09/1996 | US5534454 Method of producing a semiconductor device having accurate current detection |
| 07/09/1996 | US5534453 Washing, heat treatment |
| 07/09/1996 | US5534452 Method for producing semiconductor device |
| 07/09/1996 | US5534451 Method for fabricating a reduced area metal contact to a thin polysilicon layer contact structure having low ohmic resistance |
| 07/09/1996 | US5534445 Method of fabricating a polysilicon thin film transistor |
| 07/04/1996 | WO1996020499A1 Novel transistor with ultra shallow tip and method of fabrication |
| 07/04/1996 | WO1996020497A1 Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material glued on a support wafer |
| 07/04/1996 | DE4446811A1 GTO-thyristor with front and rear-sided emitter zones |
| 07/04/1996 | DE19522364C1 Semiconductor transistor bonding pad arrangement |
| 07/03/1996 | EP0720418A1 Ternary compound film and manufacturing method therefor |
| 07/03/1996 | EP0720238A2 Circuit arrangement for reducing the voltage dependence of a MOS-capacitor |
| 07/03/1996 | EP0720237A1 Zener diode for integrated circuits |
| 07/03/1996 | EP0720236A2 Trench MOSFET with multi-resistivity drain to provide low on-resistance |
| 07/03/1996 | EP0720235A2 Trench MOSFET with heavily doped delta-layer to provide low on-resistance |
| 07/03/1996 | EP0720234A2 Vertical power MOSFET having thick metal layer to reduce distributed resistance and method of fabricating the same |
| 07/03/1996 | EP0720225A2 Lateral power MOSFET having metal strap layer to reduce distributed resistance and method of fabricating the same |
| 07/03/1996 | EP0720218A2 Methods for reducing anomalous narrow channel effect in trench-bounded buried-channel p-MOSFETS |
| 07/03/1996 | EP0720215A1 Fabrication process for MOSFET |
| 07/03/1996 | EP0719456A1 Charge coupled device, and imaging device comprising such a charge coupled device |
| 07/03/1996 | EP0719455A1 Single-pole transistor with integrated reset structure |
| 07/03/1996 | CN1125999A Electromigration resistant metallization structures for microcircuit interconnections with RF-reactively sputtered titanium tungsten and gold |
| 07/03/1996 | CN1125901A Semiconductor device and fabrication method thereof |
| 07/03/1996 | CN1032233C Method for photolithographically forming selfaligned mask using back-side exposure and non-specular reflecting layer |
| 07/02/1996 | US5532959 Electrically erasable and programmable read only memory device equipped with inspection circuit for threshold levels of memory cells |
| 07/02/1996 | US5532934 Floorplanning technique using multi-partitioning based on a partition cost factor for non-square shaped partitions |
| 07/02/1996 | US5532899 Voltage protection structure for semiconductor devices |
| 07/02/1996 | US5532850 TFT active matrix liquid crystal display with gate lines having two layers, the gate electrode connected to the wider layer only |
| 07/02/1996 | US5532511 Semiconductor device comprising a highspeed static induction transistor |
| 07/02/1996 | US5532508 Semiconductor device with LDD structure |
| 07/02/1996 | US5532507 MES field effect transistor possessing lightly doped drain |
| 07/02/1996 | US5532505 Field effect transistor including a cap with a doped layer formed therein |
| 07/02/1996 | US5532503 Charge transfer device with multi-line read structure |
| 07/02/1996 | US5532502 Conductivity-modulated-type MOSFET |
| 07/02/1996 | US5532486 Heterojunction diode with low turn-on voltage |
| 07/02/1996 | US5532184 Method of fabricating a semiconductor device using quantum dots or wires |
| 07/02/1996 | US5532183 Semiconductor device having heavily doped silicon film |
| 07/02/1996 | US5532181 Method of manufacturing semiconductor non-volatile memory device having different gate insulating thicknesses |
| 07/02/1996 | US5532179 Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof |
| 07/02/1996 | US5532175 Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate |
| 07/02/1996 | US5531121 Micromachined integrated pressure sensor with oxide polysilicon cavity sealing |
| 07/02/1996 | CA2054668C Micromachined differential pressure transducers and method of producing the same |
| 06/27/1996 | WO1996019870A1 A power semiconductor switch |
| 06/27/1996 | WO1996019834A2 Semiconductor device having an insulated gate |
| 06/27/1996 | WO1996019833A1 High voltage thin film semiconductor device |
| 06/27/1996 | WO1996019831A2 Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement |
| 06/27/1996 | WO1996019719A1 Excitation of polysilicon-based pressure sensors |
| 06/27/1996 | WO1996013863A3 Field effect device |
| 06/27/1996 | WO1996012346A3 A protected switch |
| 06/27/1996 | DE4445568A1 Thin-film, poly:silicon@ transistor mfr. |
| 06/27/1996 | DE4445565A1 Säulen-Bipolartransistor und Verfahren zu seiner Herstellung Column bipolar transistor and method for its preparation |
| 06/27/1996 | DE19548489A1 Protection circuit for input=output circuit |
| 06/27/1996 | DE19548076A1 Semiconductor device with thin film silicon on insulator MOSFET |
| 06/27/1996 | DE19547966A1 Heterojunction bipolar transistor for information processing |
| 06/27/1996 | DE19543859A1 Transistor und Transistorherstellungsverfahren Transistor and transistor fabrication process |
| 06/27/1996 | DE19532764A1 Semiconductor acceleration detection system for motor vehicle ABS brake and air bag deployment systems |
| 06/27/1996 | DE19531602A1 Connection structure in semiconductor component |
| 06/26/1996 | EP0718895A2 Non-volatile memory and method for manufacturing the same |
| 06/26/1996 | EP0718894A2 Coulomb-blockade element and method of manufacturing the same |
| 06/26/1996 | EP0718893A2 MOS controlled thyristor having two gates |
| 06/26/1996 | EP0718892A2 Semiconductor device including insulated gate bipolar transistor and method of fabricating the same |
| 06/26/1996 | EP0718891A1 High performance, high voltage non-epi bipolar transistor |
| 06/26/1996 | EP0718890A1 Field effect transistor |
| 06/26/1996 | EP0718884A2 Multilevel interconnection of semiconductor device and forming method thereof |
| 06/26/1996 | EP0718881A2 Isolation by active transistors with grounded gates |
| 06/26/1996 | EP0718877A2 Method of manufacturing a MESFET |
| 06/26/1996 | EP0717880A1 Current limiting device |
| 06/26/1996 | EP0717749A1 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics |
| 06/26/1996 | CN1032173C Semiconductor device having improved insulator gate type transistor |