| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/26/1996 | CN1032172C Power VFET device and method of its production |
| 06/25/1996 | US5530713 Strained layer InGaAs quantum well semiconductor laser on GaAs substrate with quantum well-barrier layer interface structure |
| 06/25/1996 | US5530669 Non-volatile semiconductor memory device and method for recovering write characteristics |
| 06/25/1996 | US5530668 Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage |
| 06/25/1996 | US5530286 Semiconductor device |
| 06/25/1996 | US5530277 Insulated-gate bipolar transistor |
| 06/25/1996 | US5530276 Nonvolatile semiconductor memory device |
| 06/25/1996 | US5530274 Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom, microcomputer, and IC card |
| 06/25/1996 | US5530273 Semiconductor device capable of preventing reduction of cut-off frequency by Kark effect even when operated within a high electric current density range |
| 06/25/1996 | US5530272 High electron mobility transistor including periodic heterojunction interface |
| 06/25/1996 | US5530271 Integrated structure active clamp for the protection of power semiconductor devices against overvoltages |
| 06/25/1996 | US5530265 Insulated gate semiconductor device and process for fabricating the same |
| 06/25/1996 | US5530263 Three dot computing elements |
| 06/25/1996 | US5529958 Method of manufacturing a semiconductor device having silicide |
| 06/25/1996 | US5529953 Method of forming studs and interconnects in a multi-layered semiconductor device |
| 06/25/1996 | US5529952 Refilling a trenched portion formed by multiple angled deposition in semiconductor |
| 06/25/1996 | US5529951 Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation |
| 06/25/1996 | US5529940 Method of manufacturing a vertical MOSFET having a gate electrode of polycrystalline silicon |
| 06/25/1996 | US5529939 Method of making an integrated circuit with complementary isolated bipolar transistors |
| 06/25/1996 | US5529640 Epitaxial metal-insulator-metal-semiconductor structures |
| 06/25/1996 | CA2016449C Planar isolation technique for integrated circuits |
| 06/20/1996 | WO1996019010A1 Method for fabricating asymmetrical ldd mos devices |
| 06/20/1996 | DE19546962A1 Metallisation structure e.g. of liq. crystal device |
| 06/19/1996 | EP0717497A2 Compounded power MOSFET |
| 06/19/1996 | EP0717450A2 Vertiacal insulated gate semiconductor device and method of manufacturing the same |
| 06/19/1996 | EP0717449A2 Cell structure of a MOS type semiconductor device |
| 06/19/1996 | EP0717448A1 Asymmetric low power MOS devices |
| 06/19/1996 | EP0717447A1 GTO thyristor |
| 06/19/1996 | EP0717439A2 A method of fabricating a TFT-EL pixel |
| 06/19/1996 | EP0717435A1 Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby |
| 06/19/1996 | EP0717434A2 Method of manufacturing compound semiconductor integrated circuit |
| 06/19/1996 | CN1032106C Device for transportation of electric charge and method for driving same, and apparatus for photoing solid picture |
| 06/19/1996 | CN1032091C 液晶显示器件 Liquid crystal display device |
| 06/18/1996 | US5528643 Charge coupled device/charge super sweep image system and method for making |
| 06/18/1996 | US5528547 Electrically erasable programmable read-only memory with electric field decreasing controller |
| 06/18/1996 | US5528537 Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage |
| 06/18/1996 | US5528536 Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device |
| 06/18/1996 | US5528452 Capacitive absolute pressure sensor |
| 06/18/1996 | US5528447 5-volt tolerant bi-directional i/o pad for 3-volt-optimized integrated circuits |
| 06/18/1996 | US5528397 Single crystal silicon transistors for display panels |
| 06/18/1996 | US5528396 TFT active matrix liquid crystal display devices with a holding capacitance between the pixel electrode and a scanning signal line |
| 06/18/1996 | US5528209 Monolithic microwave integrated circuit and method |
| 06/18/1996 | US5528081 High temperature refractory metal contact in silicon integrated circuits |
| 06/18/1996 | US5528070 Semiconductor sensor manufactured through anodic-bonding process |
| 06/18/1996 | US5528069 Sensing transducer using a Schottky junction and having an increased output signal voltage |
| 06/18/1996 | US5528068 Semiconductor device |
| 06/18/1996 | US5528066 Bipolar transistor having a collector well with a particular concentration |
| 06/18/1996 | US5528065 Dual-gate insulated gate field effect device |
| 06/18/1996 | US5528063 Conductive-overlaid self-aligned MOS-gated semiconductor devices |
| 06/18/1996 | US5528061 Semiconductor integrated circuit device having multi-contact wiring structure |
| 06/18/1996 | US5528060 Microwave heterojunction bipolar transistors suitable for low-power, low-noise, and high-power applications |
| 06/18/1996 | US5528058 Insulated gate controlled power switching device |
| 06/18/1996 | US5528055 Thin-film transistor |
| 06/18/1996 | US5528053 Thin-film transistor and method for the manufacture thereof |
| 06/18/1996 | US5527745 Method of fabricating antifuses in an integrated circuit device and resulting structure |
| 06/18/1996 | US5527735 Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same |
| 06/18/1996 | US5527728 Method of making thin oxide portions consisting of gate and tunnel oxides particularly in electrically erasable and programmable read-only memory cells |
| 06/18/1996 | US5527726 Self-aligned thin-film transistor constructed using lift-off technique |
| 06/18/1996 | US5527725 Method for fabricating a metal oxide semiconductor field effect transistor |
| 06/18/1996 | US5527724 Method to prevent latch-up and improve breakdown volatge in SOI mosfets |
| 06/18/1996 | US5527723 Method for forming a dynamic contact which can be either on or off or switched therebetween |
| 06/18/1996 | US5527721 Method of making FET with two reverse biased junctions in drain region |
| 06/18/1996 | US5527720 Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate |
| 06/18/1996 | US5527719 Process for making a semiconductor MOS transistor using a fluid material |
| 06/18/1996 | US5527718 Process for removing impurities from polycide electrode and insulating film using heat |
| 06/18/1996 | US5527425 Method of making in-containing III/V semiconductor devices |
| 06/18/1996 | US5527396 Deposited film forming apparatus |
| 06/18/1996 | CA2041942C Quantum wire fabricated via photo induced evaporation enhancement during in situ epitaxial growth |
| 06/13/1996 | WO1996018240A1 A protected switch |
| 06/13/1996 | WO1996018211A1 Contoured-tub fermi-threshold field effect transistor and method of forming same |
| 06/13/1996 | WO1996018194A2 Semiconductor memory with non-volatile memory transistor |
| 06/13/1996 | DE4446703A1 Bond interface for joining partly metallised glass or ceramic substrate |
| 06/13/1996 | DE4444055A1 Mfg. zener diode from two silicon wafers |
| 06/13/1996 | DE19545599A1 High-end MOS power driver for motor vehicle |
| 06/13/1996 | DE19544945A1 P=type metal oxide semiconductor field effect transistor device suitable for CMOS technology |
| 06/13/1996 | DE19523333A1 Bipolar semiconductor device |
| 06/13/1996 | DE19507169C1 High-voltage integrated circuit with insulated-gate bipolar transistor |
| 06/12/1996 | EP0716459A2 Article comprising organic thin film transistors |
| 06/12/1996 | EP0716458A2 Method of making an organic thin film transistor, and article made by the method |
| 06/12/1996 | EP0716456A1 Power transistor including a plurality of unit transistors |
| 06/12/1996 | EP0716455A2 Dual gate formation |
| 06/12/1996 | EP0716454A2 MOSFET device formed in epitaxial layer |
| 06/12/1996 | EP0716453A1 MOSFET on SOI-substrate |
| 06/12/1996 | EP0716452A2 Static random access type semiconductor memory device |
| 06/12/1996 | EP0716294A2 A temperature sensing circuit |
| 06/12/1996 | EP0716162A1 Ferroelectric thin film, ferroelectric thin film covering substrate and manufacturing method of ferroelectric thin film |
| 06/12/1996 | EP0715771A1 SiC FIELD-EFFECT TRANSISTORS AND METHOD OF MANUFACTURING THEM |
| 06/12/1996 | EP0715769A1 Self-aligned cmos process |
| 06/12/1996 | EP0715768A1 Bipolar transistor process |
| 06/12/1996 | CN1124409A Eeprom and method for fabricating the same |
| 06/12/1996 | CN1124408A Surface withstand voltage zone for semiconductor device |
| 06/12/1996 | CN1124304A Apparatus and method for anodic sxidation |
| 06/11/1996 | US5526308 Nonvolatile semiconductor memory device |
| 06/11/1996 | US5526304 Semiconductor memory device including thin-film load transistors |
| 06/11/1996 | US5526214 Short-circuit protective circuit and power darlington transistor module |
| 06/11/1996 | US5526149 Reflection type liquid crystal display device |
| 06/11/1996 | US5525841 Power gaAs fet having internal matching circuit |
| 06/11/1996 | US5525837 Reliable metallization with barrier for semiconductors |
| 06/11/1996 | US5525833 Process for making a bipolar junction transistor with a self-aligned base contact |
| 06/11/1996 | US5525829 Field effect transistor with integrated schottky diode clamp |