Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1996
08/13/1996US5544399 Method for making a pressure transducer
08/08/1996WO1996024166A1 Power thyristor with mos gated turn-off and turn-on
08/08/1996DE19603782A1 Layered III=V semiconductor structure
08/08/1996DE19529689A1 Integrated injection logic transistor device
08/08/1996DE19518967C1 Analogue-digital converter with CCD and partial voltage drivers
08/08/1996DE19503641A1 Schichtstruktur mit einer Silicid-Schicht, sowie Verfahren zur Herstellung einer solchen Schichtstruktur Layered structure with a silicide layer, and methods for producing such layered structure
08/08/1996DE19503236A1 Multilayer silicon sensor, esp. acceleration sensor
08/08/1996DE19503093A1 Opto-electronic diamond sensor
08/07/1996EP0725446A1 Insulated gate bipolar semiconductor device and method therefor
08/07/1996EP0725445A1 Comb-shaped field effect transistor
08/07/1996EP0725444A1 Thyristor device and method of manufacturing same
08/07/1996EP0725442A1 Monolithic output stage self-protected against latch-up phenomena
08/07/1996EP0725432A2 Refractory gate heterostructure field effect transistor and method
08/07/1996EP0725431A2 Method for forming ordered titanium nitride and titanium silicide upon a semiconductor wafer using a three step anneal process
08/07/1996EP0725429A2 Method of forming a metalfluoride film of an electronic device
08/07/1996EP0725403A1 Improved reading non-volatile semiconductor memory device
08/07/1996EP0725402A2 Semiconductor memory device
08/07/1996EP0725301A1 Active matrix liquid crystal display device with light shielding electrode connected to an independent potential
08/07/1996EP0725287A1 Integrated optical control element and a method for fabricating the same and optical integrated circuit element and optical integrated circuit device using the same
08/07/1996EP0724779A1 A variable capacitance semiconductor diode
08/07/1996EP0724777A1 Manufacture of electronic devices comprising thin-film circuitry
08/07/1996CN1128407A Method of fabricating a thin-film transistor and liquid-crystal display apparatus
08/06/1996USH1570 Variable lateral quantum confinement transistor
08/06/1996US5544118 Flash EEPROM system cell array with defect management including an error correction scheme
08/06/1996US5544117 Non-volatile semiconductor memory device with improved collective erasing operation
08/06/1996US5544099 Method of writing data into electrically erasable and programmable read only memory cell without disturbance to other cells
08/06/1996US5544098 Semiconductor memory device having an automatically activated verify function capability
08/06/1996US5543947 Method of driving an LCD employing an active matrix with short pulses for gray scale
08/06/1996US5543946 Liquid crystal device and display apparatus with multilayer electrodes
08/06/1996US5543791 Non-volatile parallel-to-serial converter system utilizing thin-film floating-gate, amorphous transistors
08/06/1996US5543749 Resonant tunneling transistor
08/06/1996US5543703 Generator motor for vehicles
08/06/1996US5543655 Transistor structure for improved base-collector junction characteristics
08/06/1996US5543654 Contoured-tub fermi-threshold field effect transistor and method of forming same
08/06/1996US5543652 Semiconductor device having a two-channel MISFET arrangement defined by I-V characteristic having a negative resistance curve and SRAM cells employing the same
08/06/1996US5543650 Electrostatic discharge protection circuit employing a mosfet device
08/06/1996US5543649 Electrostatic discharge protection device for a semiconductor circuit
08/06/1996US5543647 Semiconductor device having a plurality of impurity layers
08/06/1996US5543646 Field effect transistor with a shaped gate electrode
08/06/1996US5543645 Forward overvoltage protection circuit for a vertical semiconductor component
08/06/1996US5543643 Combined JFET and MOS transistor device, circuit
08/06/1996US5543642 P-channel transistor
08/06/1996US5543639 MOS gate controlled thyristor
08/06/1996US5543637 High voltage, high power
08/06/1996US5543636 Insulated gate field effect transistor
08/06/1996US5543635 Thin film transistor and method of formation
08/06/1996US5543361 Process for forming titanium silicide local interconnect
08/06/1996US5543359 Method of forming a titanium silicide film involved in a semiconductor device
08/06/1996US5543352 Irradiating a laser light for improving the crystallinity and promoting the silicon crystallization by disposing a solution containing the promoter
08/06/1996US5543351 Method of producing electrically insulated silicon structure
08/06/1996US5543343 Method fabricating an integrated circuit
08/06/1996US5543342 Method of ion implantation
08/06/1996US5543340 Method for manufacturing offset polysilicon thin-film transistor
08/06/1996US5543339 Process for forming an electrically programmable read-only memory cell
08/06/1996US5543338 Method for manufacturing a semiconductor device using a semiconductor-on-insulator substrate
08/06/1996US5543337 Method for fabricating field effect transistor structure using symmetrical high tilt angle punchthrough implants
08/06/1996US5543253 Photomask for t-gate formation and process for fabricating the same
08/06/1996US5542558 Anodizing and undercutting higher-doped silicon layer between lower p-doped layer and upper n-doped layer to form free-standing structure
08/06/1996US5542297 Acceleration sensor
08/01/1996WO1996023308A1 Improvements in an apparatus and method of use of radiofrequency identification tags
08/01/1996WO1996023230A1 Micromechanical component
08/01/1996DE19603288A1 Microwave integrated circuit capacitor on gallium arsenide substrate
08/01/1996DE19602442A1 Compound sensor using series connected piezo-resistive semiconductor measuring elements
08/01/1996DE19502862A1 FET-based sensors for detection of biologically active substances
08/01/1996CA2185901A1 Improvements in an apparatus and method of use of radiofrequency identification tags
07/1996
07/31/1996EP0724357A2 An imaging device using asymmetrical timing for pixel summing
07/31/1996EP0724298A2 Semiconductor device with bipolar transistor and fabrication method thereof
07/31/1996EP0724297A1 Transistor base contact
07/31/1996EP0724296A2 Field effect transistor having comb-shaped electrode assemblies
07/31/1996EP0724295A1 SOI-type semiconductor device with variable threshold voltages
07/31/1996EP0724293A2 Gate compacting structure of power MOS transistor
07/31/1996EP0724291A2 Semiconductor device having an improved trench isolation and method for forming the same
07/31/1996EP0724288A2 Method of forming a high-frequency transistor gate electrode
07/31/1996EP0724183A2 Liquid crystal display device and method of fabricating the same
07/31/1996EP0723706A1 Electrostatic discharge protection circuit
07/31/1996EP0723704A1 Layout for radio frequency power transistors
07/31/1996EP0681691B1 Pressure sensor
07/31/1996EP0667035A4 Single diffusion process for fabricating semiconductor devices.
07/31/1996EP0631689A4 Threshold adjustment in vertical dmos devices.
07/31/1996CN1128082A Electrical charge transfer apparatus
07/31/1996CN1127937A Semiconductor device and method for forming the same
07/31/1996CN1127936A Semiconductor integrated circuit device and electronic apparatus in use thereof
07/31/1996CN1127935A Process for fabricating semicondcutor device
07/30/1996US5541879 Nonvolatile semiconductor memory having program verifying circuit
07/30/1996US5541877 Nonvolatile semiconductor memory device having electric field buffering means
07/30/1996US5541875 High energy buried layer implant to provide a low resistance p-well in a flash EPROM array
07/30/1996US5541873 Nonvolatile memory
07/30/1996US5541871 Nonvolatile ferroelectric-semiconductor memory
07/30/1996US5541870 Ferroelectric memory and non-volatile memory cell for same
07/30/1996US5541807 Electrodes with platinum contactors, dielectric layer of lead zirconium titanate doped with metals
07/30/1996US5541748 Liquid crystal display having patterned insulating and semiconductor layers and a method of fabricating the same
07/30/1996US5541455 Method of forming low resistance contacts at the junction between regions having different conductivity types
07/30/1996US5541444 Device and method of manufacturing the same and semiconductor device and method of manufacturing the same
07/30/1996US5541440 Isolation structure for semiconductor device
07/30/1996US5541437 Acceleration sensor using MIS-like transistors
07/30/1996US5541436 MOS transistor having improved oxynitride dielectric
07/30/1996US5541435 Field effect transistor architecture
07/30/1996US5541434 Semiconductor device incorporating a contact for electrically connecting adjacent portions within the semiconductor device
07/30/1996US5541433 High speed poly-emitter bipolar transistor
07/30/1996US5541431 Semiconductor device having transistor pair
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