Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1996
09/24/1996US5559356 Semiconductor device with large substrate contact region
09/24/1996US5559355 Vertical MOS semiconductor device
09/24/1996US5559351 Doping
09/24/1996US5559348 Semiconductor device having insulated gate bipolar transistor
09/24/1996US5559347 Insulated gate-type bipolar transistor
09/24/1996US5559346 Field-effect semiconductor device with increased breakdown voltage
09/24/1996US5559344 Thin-film semiconductor element, thin-film semiconductor device and methods of fabricating the same
09/24/1996US5559343 Semiconductor device with metallic precipitate and its manufacture
09/24/1996US5559290 Capacitance type accelerometer
09/24/1996US5559050 P-MOSFETS with enhanced anomalous narrow channel effect
09/24/1996US5559049 Method of manufacturing a semiconductor device
09/24/1996US5559048 Method of making a double layered floating gate EPROM with trench isolation
09/24/1996US5559047 Method of reliably manufacturing a semiconductor device having a titanium silicide nitride
09/24/1996US5559046 Semiconductor device having a hollow around a gate electrode and a method for producing the same
09/24/1996US5559045 Method of fabricating vertical-type double diffused mosfet having a self-aligned field oxide film
09/24/1996US5559044 BiCDMOS process technology
09/24/1996US5559042 Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated
09/24/1996US5558313 Trench field effect transistor with reduced punch-through susceptibility and low RDSon
09/19/1996WO1996028849A1 Cmos circuitry with shortened p-channel length on ultrathin silicon on insulator
09/19/1996WO1996028841A1 A method for the manufacturing of micromachined structures and a micromachined structure manufactured using such method
09/19/1996WO1996028806A2 Electronic devices comprising an array
09/19/1996DE2858820C2 Current controlling semiconductor device
09/19/1996DE19528604A1 Field effect semiconductor device, esp. MESFET
09/18/1996EP0732810A2 Controllable semiconductor switch
09/18/1996EP0732757A2 N-channel field-effect transistor including a thin-film fullerene
09/18/1996EP0732751A1 Semiconductor memory device having metal-insulator transition film
09/18/1996EP0732750A1 Semiconductor integrated circuit
09/18/1996EP0732749A2 Insulated gate bipolar semiconductor device and manufacturing method thereof
09/18/1996EP0732748A2 Solid-state image sensing device and its driving method
09/18/1996EP0732746A2 Process for doping two levels of a double poly bipolar transistor after formation of second poly layer
09/18/1996EP0732740A2 Semiconductor device with plastic encapsulation
09/18/1996EP0732734A2 Method of making a self-aligned static induction transistor
09/18/1996EP0732702A2 Charge transfer apparatus and driving method thereof
09/18/1996EP0732594A1 Micromechanical semiconductor device
09/18/1996EP0732428A1 Article comprising spinel-structure material on a substrate and method of making the article
09/18/1996EP0732422A2 Ferroelectric thin-film coated substrate, method for its manufacture and nonvolatile memory comprising such a substrate
09/18/1996EP0731985A1 Improved mesh geometry for mos-gated semiconductor devices
09/18/1996EP0731984A1 Rectifier diode
09/18/1996EP0731972A1 A capacitorless dram device on silicon-on-insulator substrate
09/18/1996CN1131344A Transistor and method for forming the same
09/18/1996CN1131342A Method of making crystal silicon semiconductor and thin film transistor
09/18/1996CN1131341A Semiconductor device and method for producing the same
09/17/1996US5557566 Semiconductor nonvolatile ram having E2PROM with a floating gate located above the midportion of the transistor channel
09/17/1996US5557565 Non-volatile memory cell structure and process for forming same
09/17/1996US5557534 Forming array with metal scan lines to control semiconductor gate lines
09/17/1996US5557272 Non-volatile serial-to-parallel converter system utilizing thin-film, floating-gate, amorphous transistors
09/17/1996US5557150 Overmolded semiconductor package
09/17/1996US5557147 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same
09/17/1996US5557146 Ohmic contact using binder paste with semiconductor material dispersed therein
09/17/1996US5557141 Group iii-v semiconductors with silicon oxide film laminate, barrier films and dopes
09/17/1996US5557140 Process tolerant, high-voltage, bi-level capacitance varactor diode
09/17/1996US5557139 Buried base vertical bipolar power transistor with improved current gain and operation area
09/17/1996US5557135 Semiconductor device with field shield isolation structure and a method of manufacturing the same
09/17/1996US5557134 Dielectric isolated type semiconductor device
09/17/1996US5557131 Elevated emitter for double poly BICMOS devices
09/17/1996US5557130 ESD input protection arrangement
09/17/1996US5557129 Semiconductor MOSFET device having a shallow nitrogen implanted channel region
09/17/1996US5557128 Insulated-gate type bipolar transistor
09/17/1996US5557127 Termination structure for mosgated device with reduced mask count and process for its manufacture
09/17/1996US5557126 Thin-film transistor and method for forming the same
09/17/1996US5557125 Dielectrically isolated semiconductor devices having improved characteristics
09/17/1996US5557123 Nonvolatile semiconductor memory device with shaped floating gate
09/17/1996US5557122 Semiconductor electrode having improved grain structure and oxide growth properties
09/17/1996US5557119 Field effect transistor having unsaturated drain current characteristic
09/17/1996US5557118 Hetero-junction type bipolar transistor
09/17/1996US5557117 Heterojunction bipolar transistor and integrated circuit device using the same
09/17/1996US5556808 Method for aligning a semiconductor device
09/17/1996US5556803 Method for fabricating a charge coupled device
09/17/1996US5556801 Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes
09/17/1996US5556797 Method of fabricating a self-aligned double recess gate profile
09/17/1996US5556792 Process for manufacturing a power integrated circuit ("PIC") structure with a vertical IGBT
09/17/1996US5556463 Crystallographically oriented growth of silicon over a glassy substrate
09/17/1996US5556462 Growth method by repeatedly measuring flux in MBE chamber
09/17/1996US5555766 Acceleration sensor apparatus and method for making same
09/12/1996WO1996027907A1 Capacitor structure for an integrated circuit and method of fabrication thereof
09/12/1996WO1996027906A1 Semiconductor logic element and device using it
09/12/1996DE19608504A1 IGFET for power component of motor controlled current inverter
09/12/1996DE19535629C1 Integrated CMOS switch prodn. eliminating lateral dopant diffusion between gate electrodes
09/12/1996DE19526183C1 Mfg. two transistors of different dielectric strengths on single semiconductor body
09/11/1996EP0731557A1 Voltage reproduction device with improved linearity
09/11/1996EP0731508A2 MOS controlled thyristor and driving method thereof
09/11/1996EP0731507A1 Electrode materials
09/11/1996EP0731504A1 Process for the manufacturing of integrated circuits comprising lateral low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cells
09/11/1996EP0731502A2 Ultra-small semiconductor devices and methods of fabricating and connecting said devices
09/11/1996EP0731500A2 Method of forming a semiconductor device comprising an oxidation step followed by a heat-treatment step
09/11/1996EP0731499A2 Dry etching method of GaAs
09/11/1996EP0731494A2 Method for fabricating an integrated circuit using boron implant methodology
09/11/1996EP0731493A2 Method for formation of a polycrystalline semiconductor film
09/11/1996CN1130809A Diode having electron donor
09/11/1996CN1130808A Semiconductor device and method of fabricating same
09/11/1996CN1130806A Method of manufacturing semiconductor device having various types of MOSFETS
09/11/1996CN1130803A Method of fabricating gate electrode of CMOS device
09/11/1996CN1130802A Capacitor of semiconductor device and manufacturing method thereof
09/10/1996US5555520 Semiconductor memory device
09/10/1996US5555486 Hybrid metal/metal oxide electrodes for ferroelectric capacitors
09/10/1996US5555219 Ferroelectric material, and semiconductor memory, optical recording medium and micro-displacement control device using the ferroelectric material
09/10/1996US5555208 Static random access memory
09/10/1996US5555112 Liquid crystal display device having multilayer gate busline composed of metal oxide and semiconductor
09/10/1996US5554954 Circuit for biasing FET amplifier with single power supply
09/10/1996US5554882 Integrated trigger injector for avalanche semiconductor switch devices
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