Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1996
09/10/1996US5554880 Uniform current density and high current gain bipolar transistor
09/10/1996US5554879 High voltage component having a low stray current
09/10/1996US5554878 Intergrated high-voltage resistor including field-plate layers
09/10/1996US5554876 For controlling a flow of carriers by a voltage applied to a gate electrode
09/10/1996US5554872 Semiconductor device and method of increasing device breakdown voltage of semiconductor device
09/10/1996US5554871 Semiconductor device having MOS transistor with nitrogen doping
09/10/1996US5554869 Electrically programmable read-only memory array
09/10/1996US5554867 Nonvolatile semiconductor memory device having a memory cell transistor and a select transistor
09/10/1996US5554863 Gate turn-off thyristor
09/10/1996US5554862 Power semiconductor device
09/10/1996US5554861 Liquid crystal device
09/10/1996US5554860 Resonant tunneling transistor noise generator
09/10/1996US5554568 Polysilicon trench and buried polysilicon wall device structures
09/10/1996US5554561 Epitaxial overgrowth method
09/10/1996US5554559 Method of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectric
09/10/1996US5554554 Process for fabricating two loads having different resistance levels in a common layer of polysilicon
09/10/1996US5554553 Highly compact EPROM and flash EEPROM devices
09/10/1996US5554548 Method of fabricating a one-sided polysilicon thin film transistor
09/10/1996US5554547 Integrated circuits, liquid crystal displays
09/10/1996US5554546 Method of fabricating a high voltage transistor
09/10/1996US5554544 Field edge manufacture of a T-gate LDD pocket device
09/10/1996US5554543 Process for fabricating bipolar junction transistor having reduced parasitic capacitance
09/10/1996US5553566 Method of eliminating dislocations and lowering lattice strain for highly doped N+ substrates
09/10/1996US5553506 Force sensor and a method for manufacturing a force sensor
09/06/1996WO1996027192A1 Method and apparatus for reduced fatigue in ferroelectric memory elements
09/04/1996EP0730313A2 Article comprising alpha-hexathienyl
09/04/1996EP0730310A1 Electrically programmable and erasable non-volatile memory cell and memory devices of FLASH and EEPROM type
09/04/1996EP0730309A1 A high voltage MOSFET structure with field plate electrode and process for its fabrication
09/04/1996EP0730308A2 Integrated circuit structure with at least one IGBT
09/04/1996EP0730307A2 FET technology with dielectrically isolated sources and drains
09/04/1996EP0730306A1 Latch-up resistant DMOS semiconductor device and method of manufacturing
09/04/1996EP0730302A2 Vertical switched-emitter structure with improved lateral isolation
09/04/1996EP0730301A2 ESD protection device
09/04/1996EP0730293A2 Process for fabricating a graded-channel MOS device
09/04/1996EP0730277A1 EEPROM memory cells matrix with double polisilicon level and relating manufacturing process
09/04/1996EP0730276A1 Nonvolatile random access memory array
09/04/1996EP0730157A1 Acceleration sensor
09/04/1996EP0730137A2 Length or angle measuring device
09/04/1996EP0729647A1 Diamond shaped gate mesh for cellular mos transistor array
09/04/1996EP0729394A1 Making quantum dot particles of uniform size
09/04/1996EP0463174B1 Method of manufacturing semiconductor device
09/04/1996EP0249371B1 Semiconductor device including two compound semiconductors, and method of manufacturing such a device
09/04/1996CN1130443A Semiconductor device provided with organic semiconductor material
09/04/1996CN1130305A Method for producing semiconductor
09/04/1996CN1130304A Semiconductor device, its producing method and electo-optical device
09/03/1996US5553021 Semiconductor integrated circuit device including a voltage generator for providing desired interval internal voltages
09/03/1996US5553017 Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same
09/03/1996US5553016 Semiconductor memory device
09/03/1996US5552909 Active matrix liquid-crystal display device having ITO signal lines and either a symmetric TFT structure or electrode and signal line edges with taper angles ≦30°
09/03/1996US5552630 Thin film transistor having metallic light shield
09/03/1996US5552629 Superlattice avalance photodiode
09/03/1996US5552626 Semiconductor device having bipolar transistors with commonly interconnected collector regions
09/03/1996US5552625 Semiconductor device having a semi-insulating layer
09/03/1996US5552624 Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication
09/03/1996US5552623 Dynamic random access memory
09/03/1996US5552622 Tunnel transistor
09/03/1996US5552621 Memory with EEPROM cell having capacitive effect and method for the reading of such a cell
09/03/1996US5552617 Bipolar transistor
09/03/1996US5552615 Active matrix assembly with double layer metallization over drain contact region
09/03/1996US5552614 Self-aligned thin film transistor with sidewall spacers
09/03/1996US5552347 Fabrication process for a semiconductor pressure sensor for sensing pressure applied thereto
09/03/1996US5552332 Process for fabricating a MOSFET device having reduced reverse short channel effects
09/03/1996US5552331 Process for self-aligned source for high density memory
09/03/1996US5552330 Transistors
09/03/1996US5552329 Method of making metal oxide semiconductor transistors
08/1996
08/29/1996WO1996026550A1 Semiconductor device with a roughened semiconductive surface
08/29/1996WO1996026548A1 Emitter ballast bypass for radio frequency power transistors
08/29/1996WO1996026547A1 Semiconductor device with guard ring and process for its production
08/29/1996WO1996026545A1 Capacitor on ultrathin semiconductor on insulator
08/29/1996WO1996026536A1 Semiconductor apparatus with crystal defects and process for its fabrication
08/29/1996WO1996019831A3 Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement
08/29/1996DE19506323A1 Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche A semiconductor device with a roughened semiconductor surface
08/29/1996CA2213611A1 Emitter ballast bypass for radio frequency power transistors
08/28/1996EP0729188A2 Semiconductor device having junction field effect transistors
08/28/1996EP0729187A2 Non-volatile semiconductor memory device and method of manufacturing the same
08/28/1996EP0729186A1 MOS-technology power device integrated structure and manufacturing process thereof
08/28/1996EP0729185A2 Improvements in or relating to charge monitoring devices
08/28/1996EP0729179A1 Pressure contact housing for semiconductor component
08/28/1996EP0729177A2 Bipolar transistor
08/28/1996EP0729156A2 Memory cell
08/28/1996EP0729019A2 Method of forming a piezoresistive pressure sensor and a piezoresistive pressure sensor
08/28/1996EP0728367A1 A flash eprom transistor array and method for manufacturing the same
08/28/1996EP0728359A1 Flash eprom integrated circuit architecture
08/27/1996US5550773 Semiconductor memory having thin film field effect selection transistors
08/27/1996US5550701 Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
08/27/1996US5550484 Apparatus and method for inspecting thin film transistor
08/27/1996US5550400 Nonstoichiometric silicon nitride antifuse film between electrodes on substrate and floating gate electrode; field programmable gate arrays
08/27/1996US5550397 Metal oxide semiconductor transistors having a polysilicon gate electrode with nonuniform doping in source-drain direction
08/27/1996US5550396 Vertical field effect transistor with a trench structure
08/27/1996US5550393 Semiconductor layer structure having distributed strain and optical semiconductor device including such strained layer
08/27/1996US5550392 Semiconductor switching devices
08/27/1996US5550390 Semiconductor device and manufacturing method thereof
08/27/1996US5550388 Heterojunction FET having barrier layer consisting of two layers between channel and buffer layers
08/27/1996US5550387 Superlattice quantum well material
08/27/1996US5550090 Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures
08/27/1996US5550089 Electron beam evaporation of gadolinium-gallium oxide to form gallium oxide coating onto semiconductor substrate
08/27/1996US5550084 Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer
08/27/1996US5550081 Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
08/27/1996US5550074 Process for fabricating MOS transistors having anti-punchthrough implant regions formed by the use of a phase-shift mask
08/27/1996US5550069 Method for producing a PMOS transistor
1 ... 1941 1942 1943 1944 1945 1946 1947 1948 1949 1950 1951 1952 1953 1954 1955 1956 1957 1958 1959 1960 1961 ... 2182