Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1996
06/11/1996US5525826 Integrated vertical bipolar and vertical MOSFET transistors
06/11/1996US5525822 Fermi threshold field effect transistor including doping gradient regions
06/11/1996US5525821 PN junction trench isolation type semiconductor device
06/11/1996US5525819 Microwave concentric mesfet with inherent electromagnetic shielding
06/11/1996US5525818 Bipolar transistor device
06/11/1996US5525817 Bipolar transistor
06/11/1996US5525816 Insulated gate semiconductor device with stripe widths
06/11/1996US5525814 Three dimensional integrated latch and bulk pass transistor for high density field reconfigurable architecture
06/11/1996US5525813 Image sensor having TFT gate electrode surrounding the photoelectric conversion element
06/11/1996US5525811 Thin films
06/11/1996US5525548 Process of fixing a heat sink to a semiconductor chip and package cap
06/11/1996US5525541 Dielectric layer on intermetallic; heat treatment
06/11/1996US5525537 Process of producing diamond composite structure for electronic components
06/11/1996US5525531 SOI DRAM with field-shield isolation
06/11/1996US5525530 Method of manufacturing a semiconductor device
06/11/1996US5525280 Method of making a pressure transducer apparatus
06/06/1996WO1996017388A1 Method of manufacturing a multilayer solar cell
06/06/1996WO1996017386A1 A capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
06/06/1996WO1996017385A1 Thin film transistor for liquid crystal display and method for fabricating the same
06/06/1996WO1996010845A3 Semiconductor device comprising a ferroelectric memory element with a lower electrode provided with an oxygen barrier
06/06/1996CA2205956A1 A capacitor for an integrated circuit and method of formation thereof, and a method of adding on chip capacitors to an integrated circuit
06/05/1996EP0715409A1 Circuit for limiting the output voltage of a power transistor
06/05/1996EP0715359A1 Infrared radiation sensor
06/05/1996EP0715357A1 Carbon-doped GaAsSb semiconductor
06/05/1996EP0715356A1 Bipolar transistor and manufacturing method thereof
06/05/1996EP0715351A1 Semiconductor power component
06/05/1996EP0715347A2 Method of making a charge coupled device with edge aligned implants and electrodes
06/05/1996EP0715346A2 Method of forming a MESFET with a T-shaped gate electrode and device formed thereby
06/05/1996EP0715344A2 Process for forming gate oxides possessing different thicknesses on a semiconductor substrate
06/05/1996EP0714555A1 High-voltage breakover diode
06/05/1996EP0714554A1 Non-volatile sidewall memory cell method of fabricating same
06/05/1996EP0463067B1 Fermi threshold field effect transistor
06/05/1996DE19544725A1 Insulated gate bipolar transistor semiconductor substrate mfr.
06/05/1996CN1123957A Semiconductor device and method of manufacturing the same
06/04/1996USH1543 Ferroelectric/silicide/silicon multilayer and method of making the multilayer
06/04/1996US5524093 Semiconductor memory device having an arrangement to reduce stresses on non-selected ferroelectric capacitors while achieving high integration
06/04/1996US5524036 Charge transfer device having charge injection source for reset drain region
06/04/1996US5524017 Quantum well semiconductor laser
06/04/1996US5523980 Semiconductor memory device
06/04/1996US5523969 Electrically erasable programmable non-volatile semiconductor memory device and method for manufacturing the same
06/04/1996US5523965 Semiconductor memory device and method of manufacturing same
06/04/1996US5523964 Ferroelectric non-volatile memory unit
06/04/1996US5523787 Solid-state imaging device adapted for an interlaced scanning and a non-interlaced scanning and method for driving same
06/04/1996US5523623 Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode
06/04/1996US5523614 Bipolar transistor having enhanced high speed operation through reduced base leakage current
06/04/1996US5523607 Integrated current-limiter device for power MOS transistors
06/04/1996US5523605 Semiconductor device and method for forming the same
06/04/1996US5523603 Semiconductor device with reduced time-dependent dielectric failures
06/04/1996US5523602 Multi-layered structure having single crystalline semiconductor film formed on insulator
06/04/1996US5523601 High-breakdown-voltage MOS transistor
06/04/1996US5523600 Active device constructed in opening formed in insulation layer
06/04/1996US5523599 High voltage MIS field effect transistor
06/04/1996US5523594 Aluminum gallium arsenide/gallium arsenide junction in which a base doping concentration is high to cause band gap narrowing
06/04/1996US5523593 Compound semiconductor integrated circuit and optical regenerative repeater using the same
06/04/1996US5523588 Diamond film field effect transistor with self aligned source and drain regions
06/04/1996US5523587 Method for low temperature growth of epitaxial silicon and devices produced thereby
06/04/1996US5523585 Semiconductor device having a superlattice structure
06/04/1996US5523257 Mis semiconductor device and method of fabricating the same
06/04/1996US5523254 Method for production of SOI transistor device and SOI transistor
06/04/1996US5523246 Method of fabricating a high-voltage metal-gate CMOS device
06/04/1996US5523245 Process for fabricating high-performance facet-free small-sized bipolar transistor
06/04/1996US5523244 Transistor fabrication method using dielectric protection layers to eliminate emitter defects
06/04/1996US5523243 Etching rectangular groove through layer of silicon and superlattice to expose silicon-germanium base layer, doping, and forming emitter, collector and base contacts
06/04/1996US5523240 For neutralization of alkaline ions and dangling bonds to improve reliability
06/04/1996US5523187 Method for the fabrication of liquid crystal display device
06/04/1996US5523160 Highly-oriented diamond film
05/1996
05/31/1996CA2137013A1 Nanoelectric devices
05/30/1996WO1996016448A1 Seco process
05/30/1996WO1996016447A1 Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
05/30/1996WO1996016446A1 Lateral bipolar transistor
05/30/1996WO1996016435A2 Semiconductor device provided with a microcomponent having a fixed and a movable electrode
05/30/1996WO1996016434A1 Process for producing mosfet gate electrodes
05/30/1996WO1996016432A2 Channel or source/drain structure of mosfet and method for fabricating the same
05/30/1996WO1996016418A1 Capacitive absolute pressure sensor and method
05/30/1996WO1996016319A1 Pressure sensor
05/30/1996DE4443800A1 Superconducting field effect device
05/30/1996DE4441724A1 Modified silicon-on-insulator substrate for MOSFET back gate control
05/30/1996DE4441723A1 Herstellungsverfahren für Gate-Elektroden von MOSFETs Manufacturing method of the gate electrodes of MOSFETs
05/30/1996DE19543089A1 Electric short circuit at pn-junction prevention method for CMOS type EEPROM
05/30/1996DE19507802C1 Semiconductor body high integration meander-type resistor mfr.
05/29/1996EP0714140A1 Manufacture of thin film semiconductor device, thin film semiconductor device, liquid crystal display device, and electronic device
05/29/1996EP0714139A1 Break-over triggered two-terminal device with controlled sensitivity
05/29/1996EP0714138A1 Monolithic highly integrated microwave amplifier having a distributed tree topology
05/29/1996EP0714137A1 Bipolar transistor on SOI substrate
05/29/1996EP0714136A1 Heterojunction type or Schottky-barrier type semiconductor element and solar cell
05/29/1996EP0714135A1 Integrated device with a structure for protection against high electric fields
05/29/1996EP0714128A2 Improvements in and relating to integrated circuits
05/29/1996EP0714121A2 Corrosion protection for micromechanical metallic layers
05/29/1996EP0714017A1 Pressure sensor
05/29/1996EP0713610A1 Silicon carbide thyristor
05/29/1996CN1123472A Nonvolatile semiconductor device having side wall split gate for compensating for over-erasing operation
05/29/1996CN1123471A Semiconductor device and process for fabricating the same
05/29/1996CN1123470A Insulated-gate device (IG device) having narrowbandgap-source structure and method of manufacturing the same
05/29/1996CN1123465A Method for forming gate electrode of semiconductor device
05/29/1996CN1123463A Method for producing semiconductor device
05/28/1996US5521867 Adjustable threshold voltage conversion circuit
05/28/1996US5521866 Non-volatile semiconductor memory device having floating gate
05/28/1996US5521865 Non-volatile semiconductor memory device for storing multi-value data
05/28/1996US5521858 Semiconductor device
05/28/1996US5521735 Electron wave combining/branching devices and quantum interference devices
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