Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1996
08/27/1996US5550067 Method for producing semiconductor device having DMOS and NMOS elements formed in the same substrate
08/27/1996US5550066 Thin film transistor-electroluminescence
08/27/1996US5550065 Lab6 and titanium-tungsten-nitride
08/27/1996US5549749 Substrate with a compound semiconductor surface layer and method for preparing the same
08/27/1996CA2100492C P-n junction devices with group iv element-doped group iii-v compound semiconductors
08/27/1996CA2011627C Method of manufacturing active matrix display device using insulation layer formed by the ale method
08/22/1996WO1996025767A2 Phonon resonator and method for its production
08/22/1996WO1996025765A1 Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon-on-sapphire
08/22/1996WO1996025762A1 Mosfet with reduced leakage current
08/22/1996WO1996025741A2 Multi-valued read-only storage location with improved signal-to-noise ratio
08/22/1996WO1996025535A1 Device having a switch comprising a chromium layer and method for depositing chromium layers by sputtering
08/22/1996WO1996019834A3 Semiconductor device having an insulated gate
08/22/1996DE19606105A1 Back-source power MOSFET for power integrated circuit or discrete module
08/22/1996DE19605669A1 Active matrix display device
08/22/1996DE19605634A1 Active matrix indicating equipment
08/22/1996DE19505293A1 Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand Multivalued only memory cell with improved signal to noise ratio
08/22/1996CA2213210A1 Phonon resonator and method for its production
08/21/1996EP0727822A2 Semiconductor memory device
08/21/1996EP0727820A1 Semiconductor memory device and method of manufacturing the same
08/21/1996EP0727650A2 Surface-micromachined symmetrical differential pressure sensor
08/21/1996EP0727098A1 High-voltage ldd-mosfet with increased breakdown voltage and method of fabrication
08/21/1996EP0727097A1 Structure and fabrication of bipolar transistors
08/21/1996EP0727045A1 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics
08/21/1996CN1129492A Manufacture of thin film semiconductor device, thin film semiconductor device, liquid crystal display device and electronic device
08/21/1996CN1129358A Enhanced mobility MOSFET device and method
08/20/1996US5548548 Pass transistor for a 256 megabit dram with negatively biased substrate
08/20/1996US5548158 Structure of bipolar transistors with improved output current-voltage characteristics
08/20/1996US5548156 Semiconductor device
08/20/1996US5548155 Bipolar type semiconductor device having small parasitic capacitance, small dimensions, and small variation in transistor characteristics
08/20/1996US5548153 Thin film transistor with means to prevent threshold variations
08/20/1996US5548152 For electrostatic charge protection
08/20/1996US5548150 Field effect transistor
08/20/1996US5548148 MOS channel device with counterdoping of ion implant for reduced substrate sensitivity
08/20/1996US5548147 Extended drain resurf lateral DMOS devices
08/20/1996US5548146 Nonvolatile memory device having source and drain of memory cells integrally formed with data-source lines
08/20/1996US5548144 Recessed gate field effect transistor
08/20/1996US5548143 Metal oxide semiconductor transistor and a method for manufacturing the same
08/20/1996US5548142 Solid-state imaging device capable of removing influence by false signals
08/20/1996US5548141 Bipolar transistor having a self emitter contact aligned
08/20/1996US5548140 High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
08/20/1996US5548139 Schottky gate field effect transistor
08/20/1996US5548138 Semiconductor device with reduced tunnel resistance and circuitry using the same
08/20/1996US5548136 Substrate with a compound semiconductor surface layer and method for preparing the same
08/20/1996US5548134 Device for the protection of an integrated circuit against electrostatic discharges
08/20/1996US5548133 Insulated gate bipolar transistor
08/20/1996US5548132 Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
08/20/1996US5548129 Quantum well structure with self-aligned gate and method of making the same
08/20/1996US5548128 Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
08/20/1996US5547903 Method of elimination of junction punchthrough leakage via buried sidewall isolation
08/20/1996US5547891 Structural modification to enhance DRAM gate oxide quality
08/20/1996US5547889 Method of forming a semiconductor device having vertical conduction transistors and cylindrical cell gates
08/20/1996US5547888 Method for manufacturing a SRAM cell having asymmetrical LDD type MIS device
08/20/1996US5547886 Method of producing a semiconductor device
08/20/1996US5547884 Method of manufacturing a semiconductor memory device having a common source region
08/20/1996US5547883 Method for fabricating thin film transistor
08/20/1996US5547882 Depositing sacrificial oxide layer on semiconductor substrate, doping with boron ions to adjust threshold voltage, then forming polysilicon gate layer on oxide,
08/20/1996US5547880 Method for forming a zener diode region and an isolation region
08/20/1996US5547789 Pattern transfer mask
08/15/1996WO1996024953A1 TRENCH FIELD EFFECT TRANSISTOR WITH REDUCED PUNCH-THROUGH SUSCEPTIBILITY AND LOW R¿DSon?
08/15/1996WO1996024952A1 Layered structure with a silicide layer, and process for producing such a layered structure
08/15/1996WO1996016432A3 Channel or source/drain structure of mosfet and method for fabricating the same
08/15/1996CA2212765A1 Trench field effect transistor with reduced punch-through susceptibility and low rdson
08/14/1996EP0726604A2 MIS device and method of manufacturing the same
08/14/1996EP0726603A2 Trenched field effect transistor with PN depletion barrier
08/14/1996EP0726602A2 Insulated gate semiconductor device
08/14/1996EP0726600A2 Method of forming a structure for DRAM and structure formed thereby
08/14/1996EP0726594A2 Semiconductor device and method of manufacturing the same
08/14/1996EP0725979A1 Method of controlling oxide thinning in an eprom or flash memory array
08/14/1996EP0725939A1 Head-mounted display system
08/14/1996EP0654173A4 High density power device structure and fabrication process.
08/14/1996DE19504684A1 Semiconductor device with silicone ladder resin film
08/14/1996CN1128904A High shutoff voltage and thin type block-able gate transistor
08/14/1996CN1128903A High voltage MOS control power semiconductor device
08/14/1996CN1128898A Semiconductor device and method for mfg. same
08/13/1996US5546402 Flash-erase-type nonvolatile semiconductor storage device
08/13/1996US5546345 Semiconductor memory device having bipolar transistor
08/13/1996US5546341 Nonvolatile semiconductor memory
08/13/1996US5546205 Active matrix liquid crystal display panel having compensating capacitor provided without lowering pixel aperture ratio
08/13/1996US5546204 TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon
08/13/1996US5545925 Semiconductor device having a metallic silicide layer for improved operational rates
08/13/1996US5545918 Integrated circuit
08/13/1996US5545915 Semiconductor device having field limiting ring and a process therefor
08/13/1996US5545914 Semiconductor device having zener diodes with temperature stability between base and collector regions
08/13/1996US5545911 Semiconductor device having mosfets formed in inherent and well regions of a semiconductor substrate
08/13/1996US5545909 Electrostatic discharge protection device for integrated circuit
08/13/1996US5545908 Vertical type insulated-gate semiconductor device
08/13/1996US5545907 Semiconductor device and method of forming the same
08/13/1996US5545906 Non-volatile semiconductor memory device with contamination protection layers
08/13/1996US5545905 Static induction semiconductor device with a static induction schottky shorted structure
08/13/1996US5545594 Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented
08/13/1996US5545586 Method of making a transistor having easily controllable impurity profile
08/13/1996US5545583 Method of making semiconductor trench capacitor cell having a buried strap
08/13/1996US5545579 Method of fabricating a sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains
08/13/1996US5545578 Method of maufacturing a semiconductor device having a low resistance gate electrode
08/13/1996US5545576 Method for manufacturing a thin film transistor panel
08/13/1996US5545573 Method of fabricating insulated gate semiconductor device
08/13/1996US5545572 Method for fabricating electrostatic discharge protecting transistor
08/13/1996US5545571 Field effect transistor barriers, multilayer insulating films and conductive films of aluminum, chromium, titanium, tantalum and silicon or alloys with oxide films for voltage
08/13/1996US5545291 Transferring shaped block with fluid
08/13/1996US5544529 Pressure sensor and chip therefor
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