| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/30/1996 | US5541430 VDMOS semiconductor device |
| 07/30/1996 | US5541429 High voltage semiconductor device having improved electrical ruggedness and reduced cell pitch |
| 07/30/1996 | US5541426 Semiconductor device with surface-inactivated layer |
| 07/30/1996 | US5541425 Semiconductor device having trench structure |
| 07/30/1996 | US5541424 Electronic device |
| 07/30/1996 | US5541423 Monocrystalline diamond semiconductor device and several electronic components employing same |
| 07/30/1996 | US5541422 Tunnel diode with several permanent switching states |
| 07/30/1996 | US5541140 Semiconductor arrangement and method for its manufacture |
| 07/30/1996 | US5541138 Laser processing method, and method for forming insulated gate semiconductor device |
| 07/30/1996 | US5541134 Bicmos process that supports merged devices |
| 07/30/1996 | US5541133 Method of manufacturing insulated electrodes in a semiconductor device and semiconductor device manufactured by such a method |
| 07/30/1996 | US5541132 Insulated gate semiconductor device and method of manufacture |
| 07/30/1996 | US5541130 Process for making and programming a flash memory array |
| 07/30/1996 | US5541129 Method of making non-volatile memory device |
| 07/30/1996 | US5541128 Self-aligned thin-film transistor constructed using lift-off technique |
| 07/30/1996 | US5541127 Manufacturing method of sidewall insulating film |
| 07/30/1996 | US5541126 Method of making semiconductor device having thin film transistor |
| 07/30/1996 | US5541125 Method for forming a lateral MOS transistor having lightly doped drain formed along with other transistors in the same substrate |
| 07/30/1996 | US5541124 Method for making bipolar transistor having double polysilicon structure |
| 07/30/1996 | US5541123 Method for forming a bipolar transistor having selected breakdown voltage |
| 07/30/1996 | US5541122 Method of fabricating an insulated-gate bipolar transistor |
| 07/30/1996 | US5541121 Doping, forming diffusion source dielectric layer, etching emitter window, forming screen oxide, implanting, siliciding |
| 07/30/1996 | US5541119 Manufacturing method of active circuit elements integrated type liquid crystal display |
| 07/30/1996 | US5540977 Microelectronic component |
| 07/30/1996 | US5540786 Light emitting material |
| 07/30/1996 | CA2033780C Thin, dielectrically isolated island resident transistor structure having low collector resistance |
| 07/30/1996 | CA2031427C Pressure sensor and method of manufacturing same |
| 07/25/1996 | WO1996022622A1 Silicon segment programming method and apparatus |
| 07/25/1996 | WO1996022620A1 Conductive epoxy flip-chip |
| 07/25/1996 | WO1996022616A1 Flat panel imaging device |
| 07/25/1996 | WO1996022615A1 Co-implantation of arsenic and phosphorus in extended drain region for improved performance of high voltage nmos device |
| 07/25/1996 | WO1996022614A1 Silicon controlled rectifier for esd protection |
| 07/25/1996 | WO1996022611A1 A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
| 07/25/1996 | WO1996022610A1 Semiconductor device in silicon carbide |
| 07/25/1996 | DE19502117A1 Electrostatic discharge protection for FET-controlled semiconductor |
| 07/24/1996 | EP0723300A2 Semiconductor device with Schattky electrode |
| 07/24/1996 | EP0723299A1 An improved low capacitance floating diffusion structure for a solid state image sensor |
| 07/24/1996 | EP0723298A2 Image sensor with improved output region for superior chrage transfer characteristics |
| 07/24/1996 | EP0723296A2 Integrated latch and pass transistor |
| 07/24/1996 | EP0723288A2 Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes |
| 07/24/1996 | EP0723287A2 Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes |
| 07/24/1996 | EP0723286A2 Field-effect transistor and manufacture method thereof |
| 07/24/1996 | EP0723179A1 Liquid crystal display device |
| 07/24/1996 | EP0723039A2 Compound semiconductor substrate and process of producing same |
| 07/24/1996 | EP0722629A1 Field effect transistor with switchable body to source connection |
| 07/24/1996 | EP0722619A1 Varactor diode having a stepped capacitance-voltage profile |
| 07/24/1996 | CN1127427A Method of processing semiconductor device with laser |
| 07/24/1996 | CN1127423A Method for producing semiconductor device |
| 07/23/1996 | US5539613 Compact semiconductor device including a thin film capacitor of high reliability |
| 07/23/1996 | US5539550 For generating light |
| 07/23/1996 | US5539327 Protection circuit which prevents avalanche breakdown in a fet by having a floating substrate and a voltage controlled gate |
| 07/23/1996 | US5539248 Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) |
| 07/23/1996 | US5539244 Power semiconductor device |
| 07/23/1996 | US5539242 Fully current-balanced bipolar power transistor for integrated circuit applications |
| 07/23/1996 | US5539238 Area efficient high voltage Mosfets with vertical resurf drift regions |
| 07/23/1996 | US5539237 Schottky diode with guard ring |
| 07/23/1996 | US5539235 Metal programmed transistor array |
| 07/23/1996 | US5539228 Field-effect transistor with high breakdown voltage provided by channel recess offset toward drain |
| 07/23/1996 | US5539226 Charge transfer device having an output gate electrode extending over a floating diffusion layer |
| 07/23/1996 | US5539219 Thin film transistor with reduced channel length for liquid crystal displays |
| 07/23/1996 | US5539217 Silicon carbide thyristor |
| 07/23/1996 | US5539216 Semiconductor device |
| 07/23/1996 | US5539214 Quantum bridges fabricated by selective etching of superlattice structures |
| 07/23/1996 | US5538923 Method for achieving a high quality thin oxide using a sacrificial oxide anneal |
| 07/23/1996 | US5538918 Method of fabricating a buried-ridge II-VI laser diode |
| 07/23/1996 | US5538913 Process for fabricating MOS transistors having full-overlap lightly-doped drain structure |
| 07/23/1996 | US5538912 Method of making memory cells with peripheral transistors |
| 07/23/1996 | US5538911 Vapor deposition of a diamond film on a semiconductor, followed by depositing a semiconductor film and a metal film; doping the diamond film after masking and forming an electrode arrangement |
| 07/23/1996 | US5538909 Method of making a shallow trench large-angle-tilt implanted drain device |
| 07/23/1996 | US5537882 Semiconductor sensor for detecting physical amount without thermal hypsteresis where output wiring is disposed in a stress insensitive direction |
| 07/18/1996 | WO1996021952A1 Thin film devices |
| 07/18/1996 | WO1996016435A3 Semiconductor device provided with a microcomponent having a fixed and a movable electrode |
| 07/18/1996 | DE19500588A1 IGBT for power semiconductor technology |
| 07/17/1996 | EP0722190A2 TaSiN oxygen diffusion barrier in multilayer structures |
| 07/17/1996 | EP0722189A2 Edge termination method and structure for power MOSFET |
| 07/17/1996 | EP0721665A1 Semiconductor component with high breakdown voltage |
| 07/17/1996 | EP0721664A1 Structure and method of making a capacitor for an integrated circuit |
| 07/17/1996 | EP0721658A1 Counter-implantation method of manufacturing a semiconductor device with self-aligned anti-punchthrough pockets |
| 07/17/1996 | EP0721643A1 Spacer flash cell process |
| 07/17/1996 | EP0721587A1 Micromechanical device and process for producing the same |
| 07/17/1996 | CN1126844A Liouid crystal display apparatus and production method thereof |
| 07/17/1996 | CN1032339C 半导体器件 Semiconductor devices |
| 07/16/1996 | US5537234 Relective liquid crystal display including driver devices integrally formed in monocrystalline semiconductor layer and method of fabricating the display |
| 07/16/1996 | US5536971 Semiconductor device having a hollow around a gate electrode and a method for producing the same |
| 07/16/1996 | US5536967 Semiconductor device including Schottky gate of silicide and method for the manufacture of the same |
| 07/16/1996 | US5536966 Retrograde NWell cathode Schottky transistor and fabrication process |
| 07/16/1996 | US5536962 Semiconductor device having a buried channel transistor |
| 07/16/1996 | US5536961 High breakdown voltage semiconductor device |
| 07/16/1996 | US5536959 Self-aligned charge screen (SACS) field effect transistors and methods |
| 07/16/1996 | US5536958 Semiconductor device having high voltage protection capability |
| 07/16/1996 | US5536957 MOS field effect transistor having source/drain regions surrounded by impurity wells |
| 07/16/1996 | US5536956 Formed on a semiconductor substrate |
| 07/16/1996 | US5536953 Wide bandgap semiconductor device including lightly doped active region |
| 07/16/1996 | US5536952 Heterojunction bipolar transistor |
| 07/16/1996 | US5536951 Semiconductor device having thin film transistor with diffusion preventing layer |
| 07/16/1996 | US5536950 High resolution active matrix LCD cell design |
| 07/16/1996 | US5536948 Infrared detector element substrate with superlattice layers |
| 07/16/1996 | US5536668 Method of manufacturing a virtual ground split gate nonvolatile memory device |
| 07/16/1996 | US5536667 Method for forming a gate electrode in a semiconductor device |
| 07/16/1996 | US5536666 Method for fabricating a planar ion-implanted GaAs MESFET with improved open-channel burnout characteristics |