Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1998
06/16/1998US5767544 Semiconductor integrated circuit device
06/16/1998US5767543 Ferroelectric semiconductor device having a layered ferroelectric structure
06/16/1998US5767540 Hetero-junction bipolar transistor having AlGaAsP emitter layer underneath a base electrode
06/16/1998US5767539 Heterojunction field effect transistor having a InAlAs Schottky barrier layer formed upon an n-InP donor layer
06/16/1998US5767536 Having electrode which shows small contact resistance and enables an ohmic contact between electrode and a semiconductor layer; layer comprises zinc, magnesium, sulfur, selenium
06/16/1998US5767535 Quantum layer structure
06/16/1998US5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements
06/16/1998US5767531 Thin-film transistor, method of fabricating the same, and liquid-crystal display apparatus
06/16/1998US5767529 Method of manufacturing a semiconductor
06/16/1998US5767007 Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode
06/16/1998US5767004 Forming amorphous silicon layer on substrate, forming polysilicon layer, annealing, forming impurity diffusion inhibiting layer
06/16/1998US5767003 Thin film semiconductor device manufacturing method
06/16/1998US5766999 Method for making self-aligned bipolar transistor
06/16/1998US5766998 Resolution
06/16/1998US5766997 Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions
06/16/1998US5766996 Forming multilayer structure on substrate, coating with oxidation resistant layer, forming oxide layer
06/16/1998US5766988 Fabricating method for a thin film transistor with a negatively sloped gate
06/16/1998US5766977 Generating a hydrogen active material by reacting heated nickel and hydrogen gas, annealing
06/16/1998US5766973 Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates
06/16/1998US5766972 Method of making resin encapsulated semiconductor device with bump electrodes
06/16/1998US5766969 Multiple spacer formation/removal technique for forming a graded junction
06/16/1998US5766966 Power transistor device having ultra deep increased concentration region
06/16/1998US5766965 Forming isolation region, gate electrodes, insulating film, doping, forming source and drain regions, forming metal silicide films
06/11/1998WO1998025310A1 GATE ELECTRODE FOR GaAs FET
06/11/1998WO1998025309A1 Eeprom storage cell
06/11/1998WO1998025308A1 Film-like composite structure and method of manufacture thereof
06/11/1998WO1998025307A1 Semiconductor device
06/11/1998WO1998025263A1 Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
06/11/1998WO1998025090A1 Spherical shaped semiconductor integrated circuit
06/11/1998WO1998024544A1 Laminated assembly for active bioelectronic devices
06/11/1998CA2274047A1 Laminated assembly for active bioelectronic devices
06/10/1998EP0847091A2 Low voltage eeprom/nvram transistors and making method
06/10/1998EP0847090A2 Trench gate structure IGBT
06/10/1998EP0847079A2 Method of manufacturing an MIS electrode
06/10/1998EP0847078A1 Method for manufacturing semiconductor device
06/10/1998EP0847059A2 Semiconductor memory
06/10/1998EP0846342A1 Radiation-emitting semiconductor diode, and method of manufacturing such a diode
06/10/1998EP0846341A1 Metal insulator semiconductor structure with polarization-compatible buffer layer
06/10/1998EP0846340A1 Switched magnetic field sensitive field effect transistor device
06/10/1998EP0846337A1 Self-aligned isolation and planarization process for memory array
06/10/1998EP0846336A2 Method of manufacturing an electronic device comprising thin film transistors
06/10/1998EP0674806B1 Silicon on diamond circuit structure and method of making same
06/10/1998DE19735430A1 MOS transistor with number of source regions in active semiconductor region
06/10/1998DE19707977C1 Capacitor production especially for DRAM cell array
06/10/1998DE19652423A1 Silicon-germanium hetero bipolar transistor
06/10/1998DE19652417A1 MOSFET und Verfahren zur Herstellung der Schichten für einen derartigen Transistor MOSFET and method of manufacturing the layers of such a transistor
06/10/1998DE19650786A1 EEPROM-Speicherzelle EEPROM memory cell
06/10/1998DE19650599A1 Power semiconductor device with trench-IGBT cells
06/10/1998CN1184336A Semi-conductor device
06/10/1998CN1184328A Process for manufacture of MOS gated device with self aligned cells
06/10/1998CN1184276A Single-chip system having electrostatic discharge (ESD) protective circuitry
06/09/1998US5764320 Liquid crystal display device
06/09/1998US5764206 Drive circuit and method for designing the same
06/09/1998US5763982 Mounting arrangement of acceleration detecting elements
06/09/1998US5763950 Semiconductor element cooling apparatus
06/09/1998US5763937 Device reliability of MOS devices using silicon rich plasma oxide films
06/09/1998US5763935 Bipolar semiconductor device and fabricating method thereof
06/09/1998US5763933 Nanofabricated structures having a region of changeable conductivity
06/09/1998US5763931 Semiconductor device with SOI structure and fabrication method thereof
06/09/1998US5763928 Hall effect modulation of resistor values
06/09/1998US5763927 High-voltage lateral field effect transistor having auxiliary drain electrode for a step-down drain voltage
06/09/1998US5763926 Semiconductor device having a Bi-CMOS transistor including an n-channel MOS transistor
06/09/1998US5763923 Compound PVD target material for semiconductor metallization
06/09/1998US5763918 Electrostatic discharge protection device
06/09/1998US5763915 DMOS transistors having trenched gate oxide
06/09/1998US5763914 Cell topology for power transistors with increased packing density
06/09/1998US5763913 Flash memory device with improved efficiency and reliability and method of making the same
06/09/1998US5763905 Semiconductor device having a passivation layer
06/09/1998US5763904 Non-single crystal semiconductor apparatus thin film transistor and liquid crystal display apparatus
06/09/1998US5763902 Insulated gate bipolar transistor having a trench and a method for production thereof
06/09/1998US5763899 Active matrix display device
06/09/1998US5763319 Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility
06/09/1998US5763318 Method of making a machine structures fabricated of mutiple microstructure layers
06/09/1998US5763311 High performance asymmetrical MOSFET structure and method of making the same
06/09/1998US5763309 Self-aligned isolation and planarization process for memory array
06/09/1998US5763308 Method for fabricating flash memory cells using a composite insulating film
06/09/1998US5763301 Ion injection impurities into semiconductor layer on both sidewalls of electrode which have only one sidewall spacer on one side
06/09/1998US5763285 Removing a portion doped first polysilicon gate region, then applying a second polysilicon gate region, etching, doping to form two different concentration impurities region
06/09/1998CA2122249C Capacitive discharge ignition system with self-triggering solid state switch
06/04/1998WO1998024163A2 Multiple magnetic tunnel structures
06/04/1998WO1998024127A1 Electrically erasable and programmable read only memory (eeprom) having multiple overlapping metallization layers
06/04/1998WO1998024120A1 Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures
06/04/1998WO1998024119A1 Process for manufacturing micromechanical functional elements
06/04/1998WO1998024118A1 Electronic device manufacture by energy beam crystallisation
06/04/1998WO1998023997A1 Thin film transistor-liquid crystal display and method of fabricating the same
06/04/1998WO1998023995A1 Active matrix liquid crystal display
06/04/1998WO1998023935A1 Process for producing micromechanical sensors
06/04/1998WO1998023934A1 Micromechanical sensor
06/04/1998DE19729601A1 Semiconductor DRAM component with resistance element having interference security
06/04/1998CA2270896A1 Multiple magnetic tunnel structures
06/03/1998EP0845829A2 RF switching cells
06/03/1998EP0845815A2 Semiconductor device, method of designing the same and semiconductor integrated circuit device
06/03/1998EP0845814A2 Method of producing a GTO thyristor
06/03/1998EP0845813A1 Insulated gate bipolar transistor
06/03/1998EP0845803A1 SiC ELEMENT AND PROCESS FOR ITS PRODUCTION
06/03/1998EP0845665A2 Sensor, bias circuit and method for shunting current therein
06/03/1998EP0845156A2 A thin-film electronic device and a method of manufacturing such device
06/03/1998EP0815596A4 Improved non-destructively read ferroelectric memory cell
06/03/1998EP0786813A4 Field-effect transistor of the metal-dielectric-semiconductor type
06/03/1998CN1183649A Geometrical control of device corner threshold
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