Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/1998
05/12/1998US5751531 Protection circuit against high energy overvoltages, having a controlled clipping voltage
05/12/1998US5751381 Active matrix LCD device with image signal lines having a multilayered structure
05/12/1998US5751261 Control system for display panels
05/12/1998US5751065 Integrated circuit with active devices under bond pads
05/12/1998US5751059 Pyroelectric sensor
05/12/1998US5751054 Zener diodes on the same wafer with BiCDMOS structures
05/12/1998US5751053 Semiconductor device having a bipolar transistor and method of manufacturing the same
05/12/1998US5751052 Inductive driver circuit and method therefor
05/12/1998US5751048 Semiconductor device having a contact window structure
05/12/1998US5751046 Semiconductor device with VT implant
05/12/1998US5751045 Nand type non-volatile memory device
05/12/1998US5751041 Semiconductor integrated circuit device
05/12/1998US5751038 Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers
05/12/1998US5751037 Non-volatile memory cell having dual gate electrodes
05/12/1998US5751036 Floating gate type non-volatile semiconductor memory device
05/12/1998US5751035 Semiconductor device provided with LDD transistors
05/12/1998US5751033 Frequency converter circuit structure having two sources
05/12/1998US5751032 Color linear charge coupled device and method for driving the same
05/12/1998US5751030 Field effect transistor
05/12/1998US5751029 Field-effect semiconductor device having heterojunction
05/12/1998US5751028 Semiconductor device formed on a substrate having an off-angle surface
05/12/1998US5751027 Field effect semiconductor device with a low-noise drift layer and a high-power drift layer
05/12/1998US5751025 High voltage current limiter and method for making
05/12/1998US5751024 Insulated gate semiconductor device
05/12/1998US5751023 Semiconductor device and method of manufacturing the same
05/12/1998US5751022 Thyristor
05/12/1998US5751017 Thin film transistor having double gate insulating layer
05/12/1998US5751016 Device having a switch comprising a chromium layer
05/12/1998US5751012 Polysilicon pillar diode for use in a non-volatile memory cell
05/12/1998US5750443 Method of manufacturing semiconductor device
05/12/1998US5750437 Avoiding current leakage accompanied with silicidation
05/12/1998US5750435 Method for minimizing the hot carrier effect in N-MOSFET devices
05/12/1998US5750434 Dry polishing with chromium oxide or cerium oxide and iron oxide
05/12/1998US5750430 Method for making metal oxide semiconductor field effect transistor (MOSFET)
05/12/1998US5750429 Semiconductor device and manufacture method of the same
05/12/1998US5750427 Non-volatile memory cell structure and process for forming same
05/12/1998US5750426 Method of making MOS precision capacitor with low voltage coefficient
05/12/1998US5750419 Process for forming a semiconductor device having a ferroelectric capacitor
05/12/1998US5750416 Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance
05/12/1998US5750414 Method of fabricating a semiconductor device
05/12/1998US5749253 Electrical/mechanical access control systems and methods
05/07/1998WO1998019344A1 Threshold adjust in vertical dmos transistor
05/07/1998WO1998019343A1 Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
05/07/1998WO1998019342A1 Controllable semiconductor structure with improved switching properties
05/07/1998WO1998019337A1 Integrated circuits and methods for their fabrication
05/07/1998WO1998019330A1 Doped silicon diffusion barrier region
05/07/1998DE19747159A1 Halbleiterbauteil mit MOS-Gatesteuerung und Verfahren zu seiner Herstellung A semiconductor device comprising MOS gated and process for its preparation
05/07/1998DE19645677A1 Circuit with semiconductor structure with tunnel dielectric esp. for non-volatile memory, e.g. EEPROM
05/07/1998DE19643185A1 Speicherzelle und Verfahren zur Herstellung einer nichtflüchtigen Speicherzelle Memory cell and method for manufacturing a non-volatile memory cell
05/06/1998EP0840379A2 Semiconductor device comprising at least an IGBT and a diode
05/06/1998EP0840377A1 Semiconductor device using diode place-holders and method of manufacture thereof
05/06/1998EP0840367A2 Method for fabricating a semiconductor device using lateral gettering
05/06/1998EP0840362A1 Fabrication of tungsten gate electrodes by means of tungsten carbonyl
05/06/1998EP0840206A1 Threshold logic circuits with limited area
05/06/1998EP0839390A1 Electrically erasable and programmable non-volatile storage location
05/06/1998EP0839386A1 Method of producing an mos transistor
05/06/1998EP0807320A4 Power thyristor with mos gated turn-off and turn-on
05/06/1998CN2281002Y Surface-adhesive diode
05/06/1998CN1180934A Semiconductor integrated capacitive acceleration sensor and relative fabrication method
05/06/1998CN1180924A Method of forming power semiconductor devices with controllable integrated buffer
05/05/1998US5748567 Acceleration sensor
05/05/1998US5748532 Semiconductor nonvolatile memory device and computer system using the same
05/05/1998US5748528 EEPROM memory device with simultaneous read and write sector capabilities
05/05/1998US5748523 Integrated circuit magnetic memory element having a magnetizable member and at least two conductive winding
05/05/1998US5748169 Display device
05/05/1998US5748016 Driver circuit
05/05/1998US5747993 Movement actuator/sensor systems
05/05/1998US5747882 Device including means for preventing tungsten silicide lifting, and method of fabrication thereof
05/05/1998US5747878 Ohmic electrode, its fabrication method and semiconductor device
05/05/1998US5747872 Fast power diode
05/05/1998US5747871 Bipolar transistor having a self-aligned base electrode and method for manufacturing the same
05/05/1998US5747865 Varactor diode controllable by surface layout design
05/05/1998US5747859 Magnetic device and magnetic sensor using the same
05/05/1998US5747854 Semiconductor device and manufacturing method thereof
05/05/1998US5747853 Semiconductor structure with controlled breakdown protection
05/05/1998US5747851 Semiconductor device with reduced breakdown voltage between the gate electrode and semiconductor surface
05/05/1998US5747850 Extended drain resurf lateral DMOS devices
05/05/1998US5747849 Nonvolatile memory device having buried data lines and floating gate electrode on buried data lines
05/05/1998US5747848 Nonvolatile memory devices including arrays of discrete floating gate isolation regions
05/05/1998US5747847 Semiconductor integrated circuit device, method for manufacturing the same, and logical circuit
05/05/1998US5747846 Programmable non-volatile memory cell
05/05/1998US5747842 Epitaxial overgrowth method and devices
05/05/1998US5747841 Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement
05/05/1998US5747838 Ultra-low phase noise GaAs MOSFETs
05/05/1998US5747836 Semiconductor integrated circuit provided with thyristor
05/05/1998US5747835 Serial arrangement of photothyristors
05/05/1998US5747831 SIC field-effect transistor array with ring type trenches and method of producing them
05/05/1998US5747830 Semiconductor display device with a hydrogen supply and hydrogen diffusion barrier layers
05/05/1998US5747829 Dielectric isolated high voltage semiconductor device
05/05/1998US5747828 Semiconductor device with increased distance between channel edges and a gate electrode
05/05/1998US5747788 Solid state image sensor with reinforced fringe electric field at its charge transfer section
05/05/1998US5747705 Method for making a thin film resonant microbeam absolute
05/05/1998US5747692 Sensor system for determining acceleration
05/05/1998US5747374 Methods of fabricating bipolar transistors having separately formed intrinsic base and link-up regions
05/05/1998US5747372 Semiconductor device and method for fabricating same
05/05/1998US5747371 Method of manufacturing vertical MOSFET
05/05/1998US5747370 Method of manufacturing a non-volatile semiconductor device
05/05/1998US5747356 Method for manufacturing ISRC MOSFET
05/05/1998US5747355 Method for producing a transistor using anodic oxidation
05/05/1998US5747354 Semiconductor device having an improved anti-radioactivity and method of fabricating the same
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