Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/1998
07/02/1998DE19747776A1 Semiconductor memory with stacked gate structure
07/02/1998DE19730762A1 Flash memory cell
07/02/1998DE19713962C1 Power diode with charge coupling zones for freewheeling diode or voltage boundary controller
07/02/1998CA2274167A1 Surface connectable semiconductor bridge elements, devices and methods
07/01/1998EP0851513A2 Method of producing semiconductor member and method of producing solar cell
07/01/1998EP0851510A2 Field effect transistor
07/01/1998EP0851509A2 Nonvolatile semiconductor memory device
07/01/1998EP0851508A1 Non volatile semiconductor memory device using a transistor with two floating gates and method for manufacturing it
07/01/1998EP0851507A2 Method for fabricating a DMOS transistor
07/01/1998EP0851506A2 Semiconductor device having quantum box and method of fabricating the same
07/01/1998EP0851505A2 semiconductor device having a high voltage termination structure with buried field-shaping region
07/01/1998EP0851502A2 Thin film semiconductor apparatus and production method thereof
07/01/1998EP0851495A1 N-Channel MOS transistor with NO LDD junction and corresponding manufacturing method
07/01/1998EP0851494A2 Semiconductor device having a protection circuit
07/01/1998EP0851493A1 Contact structure and corresponding manufacturing method for EPROM or flash EPROM semiconductor electronic devices
07/01/1998EP0851485A1 Self-aligned etching process to realize word lines of semiconductor integrated memory devices
07/01/1998EP0851484A1 Self-aligned etching process to realize word lines of semiconductor integrated memory devices
07/01/1998EP0851479A1 Process for deposing a multiple dielectric structure for enhancing the planarity of semiconductor electronic devices
07/01/1998EP0851478A2 Method of forming oxide isolation regions
07/01/1998EP0851475A2 Method of manufacturing an MOS controlled power semiconductor device
07/01/1998EP0851469A2 Semiconductor device having a tapered implanted region and method of fabrication using spin-on glass
07/01/1998EP0851463A1 Process for realizing an intermediate dielectric layer for enhancing the planarity in semiconductor electronic devices
07/01/1998EP0851431A2 Non-volatile memory and method for operating the same
07/01/1998EP0851426A2 Memory block for realizing semiconductor memory devices and corresponding manufacturing process
07/01/1998EP0717749A4 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics
07/01/1998CN1186346A Semiconductor device and manufacturing method thereof
07/01/1998CN1186342A Semiconductor device having protection circuit
07/01/1998CN1186337A Method of fabricating semiconductor device
07/01/1998CN1186331A Method for production of MOS-controlled power semiconductor component
07/01/1998CN1186326A Manufacture of crystal semiconductor
06/1998
06/30/1998US5774696 Triangle and tetrahedron mesh generation method
06/30/1998US5774327 High dielectric capacitors
06/30/1998US5773899 Bonding pad for a semiconductor chip
06/30/1998US5773891 Integrated circuit method for and structure with narrow line widths
06/30/1998US5773885 Thermally responsive compressive diode assembly
06/30/1998US5773874 Semiconductor device having a mesa structure for surface voltage breakdown
06/30/1998US5773868 Semiconductor device and method of manufacturing the same
06/30/1998US5773865 Semiconductor memory and semiconductor device having SOI structure
06/30/1998US5773863 Low power, high performance junction transistor
06/30/1998US5773861 Semiconductor device
06/30/1998US5773860 Semiconductor device including MOS capacitance
06/30/1998US5773858 Power diode
06/30/1998US5773853 Compound semiconductor device
06/30/1998US5773852 Shorted anode lateral insulated gate bipolar transistor
06/30/1998US5773851 Semiconductor device and manufacturing method thereof
06/30/1998US5773849 Field of the invention
06/30/1998US5773848 Thin film transistor with light antireflection layer
06/30/1998US5773847 Semiconductor device having an active layer with separate layers where one of the layers acts as crystal nuclei for the other
06/30/1998US5773846 Transistor and process for fabricating the same
06/30/1998US5773844 Method of forming a polycrystalline silicon layer, a thin film transistor having the polycrystalline silicon layer, method of manufacturing the same, and a liquid crystal display device having the thin film transistor
06/30/1998US5773842 Resonant-tunnelling hot electron transistor
06/30/1998US5773728 Force transducer and method of fabrication thereof
06/30/1998US5773362 Method of manufacturing an integrated ULSI heatsink
06/30/1998US5773356 Gettering regions and methods of forming gettering regions within a semiconductor wafer
06/30/1998US5773350 Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base
06/30/1998US5773349 Method for making ultrahigh speed bipolar transistor
06/30/1998US5773348 Method of fabricating a short-channel MOS device
06/30/1998US5773347 Method of maufacturing field effect transistor
06/30/1998US5773343 Semiconductor device having a recessed channel structure and method for fabricating the same
06/30/1998US5773340 Method of manufacturing a BIMIS
06/30/1998US5773339 Method of making diffused layer resistors for semiconductor devices
06/30/1998US5773338 Bipolar transistor with MOS-controlled protection for reverse-biased emitter-based junction
06/30/1998US5773334 Method of manufacturing a semiconductor device
06/30/1998US5773333 Field effect transistors
06/30/1998US5773331 Method for making single and double gate field effect transistors with sidewall source-drain contacts
06/30/1998US5773330 Semiconductor device and method for fabricating the same
06/30/1998US5773329 Polysilicon grown by pulsed rapid thermal annealing
06/30/1998US5773328 Method of making a fully-dielectric-isolated fet
06/30/1998US5773327 Semiconductor device and method of fabricating the same
06/30/1998US5773325 Method of making a variable concentration SiON gate insulating film
06/30/1998US5773324 Bidirectional horizontal charge transfer device and method
06/30/1998US5773310 Method for fabricating a MOS transistor
06/30/1998US5773152 SOI substrate having a high heavy metal gettering effect for semiconductor device
06/30/1998US5773085 Method of manufacturing ternary compound thin films
06/25/1998WO1998027598A1 Mos device having a gate to body connection formed on a soi substrate
06/25/1998WO1998027597A1 Mos device having a body to source contact feature for use on soi substrates
06/25/1998WO1998027596A1 High density electrical connectors
06/25/1998WO1998027594A1 Memory cell arrangement and process for manufacturing the same
06/25/1998WO1998027590A1 Bumps in grooves for elastic positioning
06/25/1998WO1998027589A1 Flip-chip type connection with elastic contacts
06/25/1998WO1998027584A1 Method of fabricating a vertical field effect transistor
06/25/1998WO1998027583A1 Electronic devices and their manufacture
06/25/1998WO1998027582A1 Mis transistor with self-aligned metal grid and method for making it
06/25/1998WO1998027580A1 Process for forming ultrathin oxynitride layers and thin layer devices containing ultrathin oxynitride layers
06/25/1998WO1998027578A1 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics
06/25/1998DE19648424C1 Mikromechanischer Sensor Micromechanical sensor
06/25/1998CA2275632A1 High density electrical connectors
06/25/1998CA2275523A1 Flip-chip type connection with elastic contacts
06/25/1998CA2275521A1 Bumps in grooves for elastic positioning
06/24/1998EP0849847A2 Optoelectronic element with MQW structure
06/24/1998EP0849807A1 Schottky diode
06/24/1998EP0849806A2 Improvements in or relating to semiconductor devices having tungsten nitride sidewalls
06/24/1998EP0849805A1 MOS type semiconductor device
06/24/1998EP0849804A2 Improvements in or relating to field effect transistors
06/24/1998EP0849803A2 Improvements in or relating to field effect transistors
06/24/1998EP0849801A2 Semiconductor device having NMOS and PMOS transistors on common substrate and method of fabricating the same
06/24/1998EP0849791A1 Improvements in or relating to electronic devices
06/24/1998EP0849790A1 Non-volatile semiconductor memory cell with peripheral transistors
06/24/1998EP0849783A2 Directionally deposited silicide on transistor electrodes and method for same
06/24/1998EP0849782A1 A mos transistor
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