| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/24/1998 | EP0849777A2 Method of manufacturing a gate electrode |
| 06/24/1998 | EP0849776A2 A method of manufacturing an insulated-gate field effect transistor |
| 06/24/1998 | EP0849742A1 Four states memory cell |
| 06/24/1998 | EP0848823A2 Acceleration detection device |
| 06/24/1998 | EP0795202A4 Method of manufacturing a multilayer solar cell |
| 06/24/1998 | EP0756761B1 Micro-electronic component and process for making it |
| 06/24/1998 | CN1185661A Semi-conductor device with transistor to reduce leakage current and mfg. method thereof |
| 06/24/1998 | CN1185660A Semi-conductor device with longitudinal and transversal double-pole transistor |
| 06/24/1998 | CN1038885C Semiconductor device and method for fabricating same |
| 06/23/1998 | USRE35827 Surface field effect transistor with depressed source and/or drain areas for ULSI integrated devices |
| 06/23/1998 | US5771150 Inner capacitor plate overlying portions of dielectric oxide mass which has been densified to enable nitride dielectric overcoating to be deposited as uniformly thin layer; random access memory |
| 06/23/1998 | US5771110 Thin film transistor device, display device and method of fabricating the same |
| 06/23/1998 | US5771083 Active matrix substrate and liquid crystal display device |
| 06/23/1998 | US5770886 Semiconductor device with integrated RC network and schottky diode |
| 06/23/1998 | US5770884 Semiconductor substrate |
| 06/23/1998 | US5770881 SOI FET design to reduce transient bipolar current |
| 06/23/1998 | US5770880 P-collector H.V. PMOS switch VT adjusted source/drain |
| 06/23/1998 | US5770878 Trench MOS gate device |
| 06/23/1998 | US5770877 Semiconductor memory device and method for fabricating the same |
| 06/23/1998 | US5770876 Semiconductor trench capacitor cell having a buried strap |
| 06/23/1998 | US5770873 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal |
| 06/23/1998 | US5770870 Solid-state imaging device having an unwanted charge drain section disposed adjacent to horizonal charge transfer section |
| 06/23/1998 | US5770869 Resonant tunneling hot electron device |
| 06/23/1998 | US5770868 GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets |
| 06/23/1998 | US5770866 Resonant tunneling electronic device |
| 06/23/1998 | US5770803 Semiconductor stress sensor |
| 06/23/1998 | US5770525 Selectively etching gallium arsenide layer with etchant containing a mixture of ammonia, water and hydrogen peroxide thereby forming a recesse in gallium arsenide layer |
| 06/23/1998 | US5770514 Method for manufacturing a vertical transistor having a trench gate |
| 06/23/1998 | US5770513 Method for producing semiconductor device with heat dissipation structure |
| 06/23/1998 | US5770512 Semiconductor device |
| 06/23/1998 | US5770508 Method of forming lightly doped drains in metalic oxide semiconductor components |
| 06/23/1998 | US5770507 Method for forming a gate-side air-gap structure in a salicide process |
| 06/23/1998 | US5770506 Method of fabricating a field effect transistor with short gate length |
| 06/23/1998 | US5770505 Method for the fabrication of a semiconductor device |
| 06/23/1998 | US5770503 Method of forming low threshold voltage vertical power transistor using epitaxial technology |
| 06/23/1998 | US5770502 Method of forming a junction in a flash EEPROM cell by tilt angle implanting |
| 06/23/1998 | US5770495 Refractory silicide film |
| 06/23/1998 | US5770489 Method of making a compound semiconductor field-effect transistor |
| 06/23/1998 | US5770487 Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization |
| 06/23/1998 | US5770486 Method of forming a transistor with an LDD structure |
| 06/23/1998 | US5770485 MOSFET device with an amorphized source and fabrication method thereof |
| 06/23/1998 | US5770468 Chemically reducing oxide layer found on uniformly electrodeposited solder film prior to positioning and soldering chip onto carrier without chip deformation |
| 06/23/1998 | US5770464 Method for fabricating semiconductor devices having lightly doped drain |
| 06/23/1998 | US5769944 Vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying axial magnetic field |
| 06/23/1998 | US5769389 Apparatus for controlling a flow of a fluid |
| 06/18/1998 | WO1998026460A1 Heterosubstrate for semiconductor material ii-vi and device using this heterosubstrate |
| 06/18/1998 | WO1998026459A1 Semiconductor having large volume fraction of intermediate range order material |
| 06/18/1998 | WO1998026458A1 Insulated gate semiconductor device |
| 06/18/1998 | WO1998026457A1 Silicon-germanium hetero-bipolar transistor, and method for making its various epitactiv layers |
| 06/18/1998 | WO1998026456A1 Mos transistor, and production of layers for that type of transistor |
| 06/18/1998 | WO1998026448A2 Rf power transistor having improved stability and gain |
| 06/18/1998 | WO1998012754A3 Electronic devices including electrodes comprising chromium nitride and a method of manufacturing such devices |
| 06/18/1998 | EP0862793A3 Electronic devices including electrodes comprising chromium nitride and a method of manufacturing such devices |
| 06/18/1998 | DE19754462A1 Semiconductor system with substrate which defines diaphragm with section of substrate e.g. for pressure sensor |
| 06/18/1998 | DE19753673A1 Schottky diode with substrate having two layers of different impurity concentration |
| 06/18/1998 | DE19731944A1 Charge-carrier lifetimes determining circuit for semiconductor wafer |
| 06/18/1998 | DE19718167C1 MOS transistor with shallow source-drain regions |
| 06/18/1998 | DE19652547A1 Speicherzellenanordnung und Verfahren zu deren Herstellung Memory cell arrangement, and processes for their preparation |
| 06/18/1998 | DE19652099A1 Bipolar power semiconductor component for thyristors |
| 06/18/1998 | DE19651831A1 Halbleiter-Bauelement Semiconductor component |
| 06/17/1998 | EP0848430A2 Insulated gate bipolar transistor |
| 06/17/1998 | EP0848429A1 Bipolar transistor with pocket isolation |
| 06/17/1998 | EP0848427A2 Semiconductor integrated citcuit and method for producing the same |
| 06/17/1998 | EP0848384A2 Improvements in or relating to semiconductor devices |
| 06/17/1998 | EP0847624A1 Multiple logic family compatible output driver |
| 06/17/1998 | EP0847598A2 SiC SEMICONDUCTOR DEVICE COMPRISING A PN JUNCTION WITH A VOLTAGE ABSORBING EDGE |
| 06/17/1998 | EP0847593A1 Method of producing an eeprom semiconductor structure |
| 06/17/1998 | EP0803131A4 Novel transistor with ultra shallow tip and method of fabrication |
| 06/17/1998 | EP0792514A4 Integrated circuit with complementary isolated bipolar transitors and method of making same |
| 06/17/1998 | EP0625277B1 Flat screen having individually dipole-protected microdots |
| 06/17/1998 | CN1185215A Constant current source with an EEPROM cell |
| 06/17/1998 | CN1185039A Method for prodn. of gate turn-off thyristor having anode-side stop layer and transparent anode emitter |
| 06/17/1998 | CN1185035A Method of mfg. Semiconductor device with silicide layer without short circuit |
| 06/17/1998 | CN1185031A Semiconductor device and method of mfg. same |
| 06/17/1998 | CN1185029A Method for dry-etching polycide film |
| 06/17/1998 | CN1038799C A. C. generator for vehicles |
| 06/17/1998 | CA2224848A1 Opto-electronic component with mqw structures |
| 06/16/1998 | US5768195 Semiconductor memory device |
| 06/16/1998 | US5768192 Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| 06/16/1998 | US5768185 Non-volatile semiconductor memory of a metal ferroelectric field effect transistor |
| 06/16/1998 | US5768184 Performance non-volatile semiconductor memory device |
| 06/16/1998 | US5768176 Method of controlling non-volatile ferroelectric memory cell for inducing a large amount of electric charge representative of data bit |
| 06/16/1998 | US5768175 Ferroelectric memory with fault recovery circuits |
| 06/16/1998 | US5768144 System for supporting data analysis in VLSI process |
| 06/16/1998 | US5767930 Active-matrix liquid crystal display and fabrication method thereof |
| 06/16/1998 | US5767926 Liquid crystal display and a method for manufacturing the same |
| 06/16/1998 | US5767902 Solid-state imaging device |
| 06/16/1998 | US5767827 Reflective type active matrix display panel and method of manufacturing same |
| 06/16/1998 | US5767824 Optical display apparatus |
| 06/16/1998 | US5767581 Gallium nitride-based III-V group compound semiconductor |
| 06/16/1998 | US5767558 Semiconductor device fabricated in such manner that reduced diffusion of fluorine from tungsten fluoride into silicon gate occurs |
| 06/16/1998 | US5767557 PMOSFETS having indium or gallium doped buried channels and n+polysilicon gates and CMOS devices fabricated therefrom |
| 06/16/1998 | US5767556 Field effect transistor |
| 06/16/1998 | US5767555 Compound semiconductor device controlled by MIS gate, driving method therefor and electric power conversion device using the compound semiconductor device and the driving method |
| 06/16/1998 | US5767551 Intergrated circuit combining high frequency bipolar and high power CMOS transistors |
| 06/16/1998 | US5767550 Integrated zener diode overvoltage protection structures in power DMOS device applications |
| 06/16/1998 | US5767548 Semiconductor component with embedded fixed charges to provide increased high breakdown voltage |
| 06/16/1998 | US5767547 High voltage thin film transistor having a linear doping profile |
| 06/16/1998 | US5767546 Laternal power mosfet having metal strap layer to reduce distributed resistance |
| 06/16/1998 | US5767545 Power mosfet having current detection means |