Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1998
06/03/1998CN1183646A 电力控制器件 Power control device
06/03/1998CN1183642A Semiconductor device fabrication method
06/03/1998CN1183638A Semiconductor device fabrication method
06/03/1998CN1183637A MOS device fabrication method
06/03/1998CN1183570A Liquid crystal display using organic insulating material and manufacturing methods thereof
06/02/1998US5761126 Single-poly EPROM cell that utilizes a reduced programming voltage to program the cell
06/02/1998US5761121 PMOS single-poly non-volatile memory structure
06/02/1998US5761119 Nonvolatile semiconductor memory with a plurality of erase decoders connected to erase gates
06/02/1998US5760675 Piezoresistive device and fabrication method thereof
06/02/1998US5760644 Integrated circuit timer function using natural decay of charge stored in a dielectric
06/02/1998US5760630 In a semiconductor integrated circuit
06/02/1998US5760600 Test device for insulated-gate field effect transistor and testing circuit and testing method using the same
06/02/1998US5760482 Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminum bonding layer
06/02/1998US5760475 Refractory metal-titanium nitride conductive structures
06/02/1998US5760474 Capacitor, integrated circuitry, diffusion barriers, and method for forming an electrically conductive diffusion barrier
06/02/1998US5760462 Reduced leakage across gate for speed and efficiency; chalcogenide component
06/02/1998US5760459 High performance, high voltage non-epibipolar transistor
06/02/1998US5760457 Bipolar transistor circuit element having base ballasting resistor
06/02/1998US5760455 Micromechanical semiconductor component and manufacturing method therefor
06/02/1998US5760454 Pattern form of an active region of a MOS type semiconductor device
06/02/1998US5760451 Raised source/drain with silicided contacts for semiconductor devices
06/02/1998US5760450 Semiconductor resistor using back-to-back zener diodes
06/02/1998US5760449 Regenerative switching CMOS system
06/02/1998US5760445 Device and method of manufacture for protection against plasma charging damage in advanced MOS technologies
06/02/1998US5760444 Silicon on insulator type semiconductor device
06/02/1998US5760442 Semiconductor device of a silicon on insulator metal-insulator type with a concave feature
06/02/1998US5760440 Back-source MOSFET
06/02/1998US5760439 Semiconductor memory device
06/02/1998US5760438 For storing data
06/02/1998US5760437 Semiconductor memory device, a method for manufacturing thereof and a connecting method of virtual ground array of a semiconductor memory device
06/02/1998US5760436 EEPROM cell and process for formation thereof
06/02/1998US5760435 Use of spacers as floating gates in EEPROM with doubled storage efficiency
06/02/1998US5760431 Multidirectional transfer charge-coupled device
06/02/1998US5760430 Charge transfer device and solid-state imaging apparatus using the same device
06/02/1998US5760427 High electron mobility transistor with an improved interface between donor and schottky layers
06/02/1998US5760426 Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13
06/02/1998US5760424 Integrated circuit arrangement having at least one IGBT
06/02/1998US5760420 Contact layer of a thin film transistor
06/02/1998US5760418 GaAs power semiconductor device operating at a low voltage and method for fabricating the same
06/02/1998US5760290 Semiconductor acceleration sensor and testing method thereof
06/02/1998US5759904 Bombarding silicon substrate in vacuum witrh a beam of helium ions to form dipsersed bubbles at same depth to which dopants will penetrate for damage prevention
06/02/1998US5759903 Doped, single-crystal silicon substrate; hole openings produced by electrochemical etching in a fluoride-containing, acidic electrolyte where substrate is connected as anode
06/02/1998US5759900 Method for manufacturing MOSFET
06/02/1998US5759899 Method of fabricating semiconductor device having a salicide structure
06/02/1998US5759897 Method of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region
06/02/1998US5759884 Method for forming well of semiconductor device
06/02/1998US5759879 Method for forming polycrystalline silicon film and method for fabricating thin-film transistor
06/02/1998US5759878 Method of fabricating semiconductor device having epitaxially grown semiconductor single crystal film
06/02/1998US5759867 Method of making a disposable corner etch stop-spacer for borderless contacts
06/02/1998US5759265 Forming a buffer layer having crystal orientation (111) and random in-plane directions on a single crystal semiconductor substrate, forming a ferrolectric thin film having molecular orientation in one of(111) and (0001) faces on buffer layer
05/1998
05/28/1998WO1998022983A1 Semiconductor device and process for manufacturing the same
05/28/1998DE19751745A1 Gateisolierschicht mit diamantähnlichem Kohlenstoff und Dünnfilmtransistor, der diese verwendet, und einen Prozeß zum Herstellen der Gateisolierschicht und des Dünnfilmtransistors Gate insulating film with diamond-like carbon, and thin film transistor using the same, and a process for producing the gate insulating layer and the thin film transistor
05/28/1998DE19729420A1 Semiconducting component
05/28/1998DE19648041A1 Integrated vertical semiconducting component
05/27/1998EP0844672A1 Molecule dispersion type negative resistance element and method for manufacturing the same
05/27/1998EP0844671A1 Semiconductor element and semiconductor memory device using the same
05/27/1998EP0844670A1 Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method
05/27/1998EP0844669A2 Intergrated circuit transistor
05/27/1998EP0844668A2 MOS structure of semiconductor device and method of manufacturing the same
05/27/1998EP0844662A1 An EPROM cell array
05/27/1998EP0844647A2 A low defect density composite dielectric
05/27/1998EP0843899A2 High-voltage lateral mosfet soi device having a semiconductor linkup region
05/27/1998EP0843898A1 Short channel fermi-threshold field effect transistors
05/27/1998EP0843897A1 Monolithically integrated planar semi-conductor arrangement with temperature compensation
05/27/1998EP0843891A2 Process for producing a non-volatile memory cell
05/27/1998EP0577623B1 Method of making a thyristor with adjustable breakover voltage
05/27/1998EP0573549B1 Method of fabricating visible light emitting diodes from soluble semiconducting polymers
05/27/1998CN1182980A Threshold logic circuit needing miniature area
05/27/1998CN1182962A Thin film transistor and making method
05/27/1998CN1182961A Device with static electricity discharge protection
05/27/1998CN1182960A Nonvolatile semiconductor storage device and making method
05/27/1998CN1182939A Not easily lost storage device
05/27/1998CN1182887A Active matrix substrate, LCD device and display device for using it
05/26/1998USRE35810 Plug-based floating gate memory
05/26/1998US5757599 Protection arrangement for a switching device
05/26/1998US5757445 Single crystal silicon tiles for display panels
05/26/1998US5757444 Electro-optical device and method of driving the same
05/26/1998US5757235 Metal semiconductor field effect transistor of source-ground type
05/26/1998US5757083 Drain off-set for pull down transistor for low leakage SRAM's
05/26/1998US5757065 High voltage integrated circuit diode with a charge injecting node
05/26/1998US5757061 Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof
05/26/1998US5757059 Insulated gate field effect transistor
05/26/1998US5757057 Large area avalanche photodiode array
05/26/1998US5757056 Multiple magnetic tunnel structures
05/26/1998US5757055 Triple drain magneto field effect transistor with high conductivity central drain
05/26/1998US5757051 Static memory cell and method of manufacturing a static memory cell
05/26/1998US5757048 Thin film transistor, solid state device, display device and manufacturing method of a thin film transistor
05/26/1998US5757047 Semiconductor device and method of manufacturing the same
05/26/1998US5757046 MOS type semiconductor device
05/26/1998US5757044 Electrically erasable and programmable read only memory cell with split floating gate for preventing cell from over-erase
05/26/1998US5757043 Charge pump semiconductor device
05/26/1998US5757042 High density ferroelectric memory with increased channel modulation and double word ferroelectric memory cell for constructing the same
05/26/1998US5757039 Collector up heterojunction bipolar transistor
05/26/1998US5757038 Self-aligned dual gate MOSFET with an ultranarrow channel
05/26/1998US5757037 Power thyristor with MOS gated turn-off and MOS-assised turn-on
05/26/1998US5757036 Semiconductor device with improved turn-off capability
05/26/1998US5757035 Semiconductor device
05/26/1998US5757034 Emitter switched thyristor
05/26/1998US5757033 Bidirectional thyristor with MOS turn-off capability with a single gate
05/26/1998US5757032 Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature
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