Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/1998
05/26/1998US5757030 Thin film transistor with an insulating film having an increased thickness on a periphery of a semiconductor island
05/26/1998US5757028 Thin film transistor with reduced leakage current
05/26/1998US5757024 Buried porous silicon-germanium layers in monocrystalline silicon lattices
05/26/1998US5756901 Sensor and method for manufacturing a sensor
05/26/1998US5756392 Method of formation of polycide in a semiconductor IC device
05/26/1998US5756391 Plasma carbon treatment of silicon surface to form carbon-containing silicon surface, oxidation
05/26/1998US5756387 Method for forming zener diode with high time stability and low noise
05/26/1998US5756386 Fabricating high current discrete insulated-gate field-effect transistors; metal oxide semiconductors
05/26/1998US5756384 Method of fabricating an EPROM cell with a high coupling ratio
05/26/1998US5756372 Method of making liquid crystal display
05/26/1998US5756371 For use in liquid crystal display
05/26/1998US5756365 Method of manufacturing MOS-type semiconductor device having electrode structure capable of coping with short-channel effects
05/22/1998WO1998021755A2 Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
05/22/1998WO1998021754A1 MULTILAYER ZnO POLYCRYSTALLINE DIODE
05/22/1998WO1998021753A1 Lateral bipolar field effect mode hybrid transistor and method for the same
05/22/1998WO1998005072A3 Radiation sensors
05/22/1998WO1997049133A3 Integrated circuit device with embedded flash memory and method for manufacturing same
05/22/1998EP0852813A3 Integrated circuit device with embedded flash memory and method for manufacturing same
05/22/1998CA2271313A1 Lateral bipolar field effect mode hybrid transistor and method for the same
05/20/1998EP0843402A1 BiCMOS negative charge pump
05/20/1998EP0843361A1 Memory device
05/20/1998EP0843360A1 Memory device
05/20/1998EP0843353A1 Method of manufacturing an electrically erasable and programmable non-volatile memory cells arrangement
05/20/1998EP0843351A1 Method for fabricating a NPN transistor in a BICMOS technology
05/20/1998EP0843350A1 Bipolar transistor having a non homogeneous emitter in a BICMOS integrated circuit
05/20/1998EP0843349A1 Method for fabricating a NPN transistor having a minimal surface
05/20/1998EP0842545A1 Photodetector involving a mosfet having a floating gate
05/20/1998EP0842542A1 Modulation-doped field-effect transistor with a composition-modulated barrier structure
05/20/1998EP0842538A1 Method for making a flat screen active matrix, liquid crystal screen comprising the resulting active matrix, and screen addressing method therefor
05/20/1998EP0842536A1 Semiconductor switch array with electrostatic discharge protection and method of fabricating
05/20/1998EP0842530A1 Method of forming self-aligned thin film transistor
05/20/1998EP0842455A1 Improved tft, method of making and matrix displays incorporating the tft
05/20/1998EP0711424B1 Silicon pixel electrode
05/20/1998DE19750221A1 Halbleiterbauteil mit MOS-Gatesteuerung sowie Verfahren zu seiner Herstellung A semiconductor device comprising MOS gated and process for its preparation
05/20/1998DE19743555A1 Nonvolatile memory device
05/20/1998DE19727214A1 Semiconductor acceleration sensor esp for installing in airbag of motor vehicle
05/20/1998DE19721322A1 Protective circuit against electrostatic discharge
05/20/1998DE19647618A1 Low stress contact metallisation for FET
05/20/1998CN1182271A Semiconductor memory device and method of reading datain semiconductor momory device
05/19/1998US5754392 Article comprising a relatively temperature-insensitive Ta-oxide based capacitive element
05/19/1998US5754380 CMOS output buffer with enhanced high ESD protection capability
05/19/1998US5754228 Rapid-sequence full-frame CCD sensor
05/19/1998US5754158 Liquid crystal device
05/19/1998US5754077 Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET
05/19/1998US5754074 Protected switch
05/19/1998US5753970 System having semiconductor die mounted in die-receiving area having different shape than die
05/19/1998US5753963 Multi-surfaced capacitor for storing more charge per horizontal chip area
05/19/1998US5753959 Replacing semiconductor chips in a full-width chip array
05/19/1998US5753958 Back-biasing in asymmetric MOS devices
05/19/1998US5753957 Semiconductor device and method of manufacturing the same
05/19/1998US5753955 MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
05/19/1998US5753954 Single-poly neuron MOS transistor
05/19/1998US5753953 Semiconductor storage device and method of driving the same
05/19/1998US5753952 Nonvolatile memory cell with P-N junction formed in polysilicon floating gate
05/19/1998US5753951 EEPROM cell with channel hot electron programming and method for forming the same
05/19/1998US5753950 Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming/erasing/reading method for the same
05/19/1998US5753946 Ferroelectric memory
05/19/1998US5753945 Dielectric layer sandwiched between a perovskite ferroelectric material and other material; high crystallization temperature
05/19/1998US5753944 Layout of butting contacts of a semiconductor device
05/19/1998US5753943 Insulated gate type field effect transistor and method of manufacturing the same
05/19/1998US5753942 Power semiconductor devices having arcuate-shaped source regions for inhibiting parasitic thyristor latch-up
05/19/1998US5753938 Static-induction transistors having heterojunction gates and methods of forming same
05/19/1998US5753826 Flow meter having a vibration dampener
05/19/1998US5753562 Methods of forming semiconductor devices in substrates having inverted-trench isolation regions therein
05/19/1998US5753560 Method for fabricating a semiconductor device using lateral gettering
05/19/1998US5753555 Method for forming semiconductor device
05/19/1998US5753554 Semiconductor device and method of forming the same
05/19/1998US5753546 Method for fabricating metal oxide field effect transistors
05/19/1998US5753544 Crystallization process and method of manufacturing thin film transistor using same
05/19/1998US5753543 Method of forming a thin film transistor
05/19/1998US5753541 Method of fabricating polycrystalline silicon-germanium thin film transistor
05/19/1998US5753040 Molecular beam epitaxial deposition of calcium fluoride and aluminum layers on silicon substrate
05/14/1998WO1998020564A1 Semiconductor integrated circuit device and its manufacture
05/14/1998WO1998020563A1 Power field effect transistor in sic or gan
05/14/1998WO1998020562A1 High-voltage transistor with multi-layer conduction region and method of making the same
05/14/1998WO1998020553A1 Semiconductor device with a high-frequency bipolar transistor on an insulating substrate
05/14/1998WO1998020525A1 Suppression of transient enhanced diffusion in ion implanted silicon
05/14/1998DE19726590A1 FET with active layers forming heterojunction structure
05/14/1998DE19723636A1 FET chip of reduced area and high output power
05/14/1998DE19719156A1 Transistor structure especially of access transistor
05/14/1998DE19718394A1 Thin film transistor with self-aligned offset region
05/13/1998EP0841705A2 Bipolar transistor and a method of manufacturing the same
05/13/1998EP0841704A1 Semiconductor transistor device and method of manufacturing the same
05/13/1998EP0841702A1 Lateral or vertical DMOSFET with high breakdown voltage
05/13/1998EP0841693A1 An erasable programmable read only memory and method of manufacture thereof
05/13/1998EP0841691A1 Field effect transistor and fabrication process thereof
05/13/1998EP0840943A1 Low-voltage punch-through transient suppressor employing a dual-base structure
05/13/1998EP0840942A1 GaAs SUBSTRATE WITH COMPOSITIONALLY GRADED AlGaAsSb BUFFER FOR FABRICATION OF HIGH-INDIUM FETS
05/13/1998EP0840930A1 Programmable non-volatile bidirectional switch for programmable logic
05/13/1998EP0826244A4 Lateral field effect transistor having reduced drain-to-source on-resistance
05/13/1998EP0606350B1 Gallium arsenide mesfet imager
05/13/1998CN2281586Y Isoplaner silicon avalanche electronic emission array
05/13/1998CN1181844A Semiconductor device and production method therefor
05/13/1998CN1181843A Emitter ballast bypass for radio frequency power transistors
05/13/1998CN1181842A Bipolar silicon-on-insulator transistor with increased breakdown voltage
05/13/1998CN1181633A Complex structural device of metal oxide field effect transistor and bipolar electrostatic induction transistor
05/13/1998CN1181631A 功率晶体管 Power Transistors
05/13/1998CN1181622A Method of forming well of semiconductor device
05/12/1998US5751636 Semiconductor memory device having data erasing mechanism
05/12/1998US5751540 Ferroelectric capacitor with rhodium electrodes
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