| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/08/2001 | US6229173 Hybrid 5F2 cell layout for buried surface strap aligned to vertical transistor |
| 05/08/2001 | US6229171 Storage element for semiconductor capacitor |
| 05/08/2001 | US6229164 MOSFET with a thin gate insulating film |
| 05/08/2001 | US6229163 Very high aspect ratio semiconductor devices using fractal based topologies |
| 05/08/2001 | US6229161 Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
| 05/08/2001 | US6229159 Silicon-based functional matrix substrate and optical integrated oxide device |
| 05/08/2001 | US6229156 Inverted thin film transistor having a trapezoidal-shaped protective layer |
| 05/08/2001 | US6229153 High peak current density resonant tunneling diode |
| 05/08/2001 | US6229148 Ion implantation with programmable energy, angle, and beam current |
| 05/08/2001 | US6228779 Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology |
| 05/08/2001 | US6228766 Process for fabricating semiconductor device without separation between silicide layer and insulating layer |
| 05/08/2001 | US6228752 Semiconductor device and method of manufacturing the same |
| 05/08/2001 | US6228751 Method of manufacturing a semiconductor device |
| 05/08/2001 | US6228749 Method of manufacturing semiconductor device |
| 05/08/2001 | US6228745 Selective reduction of sidewall slope on isolation edge |
| 05/08/2001 | US6228734 Method of manufacturing a capacitance semi-conductor device |
| 05/08/2001 | US6228732 Tunnel nitride for improved polysilicon emitter |
| 05/08/2001 | US6228730 Method of fabricating field effect transistor |
| 05/08/2001 | US6228728 Method of fabricating semiconductor device |
| 05/08/2001 | US6228725 Semiconductor devices with pocket implant and counter doping |
| 05/08/2001 | US6228724 Method of making high performance MOSFET with enhanced gate oxide integration and device formed thereby |
| 05/08/2001 | US6228723 Method for forming split gate non-volatile memory cells without forming a conductive layer on a boundary region between a memory cell array and peripheral logic |
| 05/08/2001 | US6228720 Method for making insulated-gate semiconductor element |
| 05/08/2001 | US6228719 MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
| 05/08/2001 | US6228717 Method of manufacturing semiconductor devices with alleviated electric field concentration at gate edge portions |
| 05/08/2001 | US6228715 Semiconductor memory device and method of manufacturing thereof |
| 05/08/2001 | US6228714 Method for manufacturing nonvolatile memory device |
| 05/08/2001 | US6228712 Non-volatile semiconductor memory device and manufacturing method thereof |
| 05/08/2001 | US6228698 Manufacture of field-effect semiconductor devices |
| 05/08/2001 | US6228696 Semiconductor-oxide-semiconductor capacitor formed in integrated circuit |
| 05/08/2001 | US6228694 Method of increasing the mobility of MOS transistors by use of localized stress regions |
| 05/08/2001 | US6228693 Selected site, metal-induced, continuous crystallization method |
| 05/08/2001 | US6228692 Thin film semiconductor device, method for fabricating the same and semiconductor device |
| 05/08/2001 | US6228673 Method of fabricating a surface coupled InGaAs photodetector |
| 05/08/2001 | US6228667 Field emission displays with reduced light leakage |
| 05/08/2001 | US6228663 Method of forming semiconductor devices using gate insulator thickness and channel length for controlling drive current strength |
| 05/08/2001 | US6228275 Method of manufacturing a sensor |
| 05/08/2001 | US6227049 Acceleration sensor and process for the production thereof |
| 05/08/2001 | CA2073966C Mosfet structure having reduced gate capacitance and method of forming same |
| 05/03/2001 | WO2001031789A2 Magnetic logic device having magnetic quantum dots |
| 05/03/2001 | WO2001031786A1 Unipolar transistor and power converter comprising it |
| 05/03/2001 | WO2001031711A2 Vertical insulated gate field-effect device and method of making the same |
| 05/03/2001 | WO2001031709A1 Semiconductor device with a single base region and method therefor |
| 05/03/2001 | WO2001031695A1 High temperature oxide deposition for eeprom devices |
| 05/03/2001 | WO2001031685A2 InPSb/InAs BJT DEVICE AND METHOD OF MAKING |
| 05/03/2001 | WO2000075965A3 Power mosfet and method of making the same |
| 05/03/2001 | US20010000756 Having a polycrystalline channel and a drain offset area also polycrystalline but of a larger grain size formed by recrystallization of the drain offset area after implanting amorphous silicon; static random memory cells; no leakage |
| 05/03/2001 | US20010000755 Covering electrodes with an insulating layer, and planarizing electrodes and insulating layer so that they become flush with each other, filling boundary portions between electrodes; prevents alignment failures of liquid crystal |
| 05/03/2001 | US20010000688 Memory structure in ferroelectric nonvolatile memory and readout method therefor |
| 05/03/2001 | US20010000676 Integral-type liquid crystal panel with image sensor function |
| 05/03/2001 | US20010000631 Chip scale surface mount package for semiconductor device and process of fabricating the same |
| 05/03/2001 | US20010000629 Semiconductor device and process of producing the same |
| 05/03/2001 | US20010000628 Compact SOI body contact link |
| 05/03/2001 | US20010000627 Active matrix display device having multiple gate electrode portions |
| 05/03/2001 | US20010000625 Non-volatile semiconductor memory device and its manufacturing method |
| 05/03/2001 | US20010000624 Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holes and related methods |
| 05/03/2001 | US20010000620 Thin film transistor and method of fabricating the same |
| 05/03/2001 | DE19954319C1 Production of multilayered contact electrodes used in diodes comprises applying a first metallizing layer, heat treating and applying a second metallizing layer over the first layer |
| 05/03/2001 | DE19951945A1 Semiconductor component with metallized sidewalls on silicon wafer power components has a metal edging surrounding the components on an underside and on partially covered metal sidewalls and deep troughs etched on silicon wafers. |
| 05/03/2001 | DE19950579A1 Compensation MOS element with high short-circuit current |
| 05/03/2001 | DE19948906A1 Deep-diffused n-conducting region production in p-doped silicon substrate comprises ion implanting sulfur or selenium as n-foreign material into regions and subsequently heat treating |
| 05/03/2001 | DE19943390A1 Semiconductor component comprises vertical stack comprising source, drain and intermediate layer, gate comprising insulating and conducting layer connecting source and drain and tunnel current flowing in section of gate |
| 05/03/2001 | DE10053463A1 Semiconductor substrate comprises substrate component of one conductivity type with channels which taper from top to bottom and are deeper than their width and which are filled with semiconductor of opposite type to first component |
| 05/03/2001 | DE10049356A1 Semiconductor sensor for holding a semiconductor sensor element in a unit produced by joining together two casing parts includes a sensor element, a plastic sensor casing and several wires fed into the sensor casing. |
| 05/03/2001 | DE10043904A1 Semiconductor device such as vertical mold field effect transistor, has source diffusion layer formed on upper portion of base diffusion layer provided on both sides of gate polysilicon layer |
| 05/03/2001 | DE10042590A1 Glass for anode joining and for manufacture of semiconductor sensor, contains preset amount of lithium oxide and is devoid of sodium oxide |
| 05/03/2001 | CA2386426A1 Elements logiques magnetiques |
| 05/02/2001 | EP1096576A1 Semiconductor device |
| 05/02/2001 | EP1096575A1 Non-volatile memory cell with a single level of polysilicon and corresponding manufacturing process |
| 05/02/2001 | EP1096574A2 Power MOSFET having a trench gate electrode and method of making the same |
| 05/02/2001 | EP1096573A2 Technique for minimizing gate charge and gate to drain capacitance in power MOS devices such as DMOS, IGBTs and MOSFETs |
| 05/02/2001 | EP1096572A1 Electrically programmable and erasable memory device and method of operating same |
| 05/02/2001 | EP1096569A1 Quantum wire array, uses thereof, and methods of making the same |
| 05/02/2001 | EP1096557A1 Process for defining two self-aligned zones at the upper surface of a substrate |
| 05/02/2001 | EP1096505A1 NROM cell with generally decoupled primary and secondary injection |
| 05/02/2001 | EP1096303A2 Electronic device |
| 05/02/2001 | EP1096260A1 Micromechanical device |
| 05/02/2001 | EP1096259A1 High-vacuum packaged microgyroscope and method for manufacturing the same |
| 05/02/2001 | EP1096042A1 Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| 05/02/2001 | EP1095454A2 Monolithically integrated trench mosfet and schottky diode |
| 05/02/2001 | EP1095410A2 Semiconductor arrangement with ohmic contact and a method for contacting a semiconductor arrangement |
| 05/02/2001 | EP1095409A1 Silicon carbide horizontal channel buffered gate semiconductor devices |
| 05/02/2001 | EP1095408A1 Vertical semiconductor element with reduced electric surface field |
| 05/02/2001 | EP1095407A1 Integrated silicon-on-insulator integrated circuit with decoupling capacity and method for making such a circuit |
| 05/02/2001 | EP1095406A2 Integrated circuit, method for producing the same and wafer with a number of integrated circuits |
| 05/02/2001 | EP1095346A1 Two-dimensional to three-dimensional vlsi design |
| 05/02/2001 | EP1058949A4 Quasi-mesh gate structure including plugs connecting source regions with backside for lateral rf mos devices |
| 05/02/2001 | EP1027734A4 An electrically erasable programmable split-gate memory cell |
| 05/02/2001 | CN1293825A Field-effect tranisistor |
| 05/02/2001 | CN1293455A Perpendicular type metallic oxide semi conductor transistor |
| 05/02/2001 | CN1293452A Channel isolating structure, semi conductor device possessing said structure and channel isolating method |
| 05/02/2001 | CN1293426A Electric-optical device driving circuit, electro-optical device and electron equipment |
| 05/02/2001 | CN1293357A Prssure, sensor, pressure sensor control device and pressure sensor system |
| 05/01/2001 | USRE37158 High performance sub-micron P-channel transistor with germanium implant |
| 05/01/2001 | US6226059 Active matrix display device using aluminum alloy in scanning signal line or video signal line |
| 05/01/2001 | US6226057 Liquid crystal display having overlapped pixel electrodes and method for fabricating the same |
| 05/01/2001 | US6225860 Source voltage detecting circuit |
| 05/01/2001 | US6225695 Grooved semiconductor die for flip-chip heat sink attachment |
| 05/01/2001 | US6225680 Semiconductor structure based on silicon carbide material, with a plurality electrically different partial regions |
| 05/01/2001 | US6225679 Method and apparatus for protecting a device against voltage surges |