| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/15/2001 | US6232633 NVRAM cell using sharp tip for tunnel erase |
| 05/15/2001 | US6232631 Floating gate memory cell structure with programming mechanism outside the read path |
| 05/15/2001 | US6232630 Light floating gate doping to improve tunnel oxide reliability |
| 05/15/2001 | US6232628 Semiconductor device having stacked capacitor structure |
| 05/15/2001 | US6232625 Semiconductor configuration and use thereof |
| 05/15/2001 | US6232624 Indium phosphide substrate; schottky layer |
| 05/15/2001 | US6232622 Semiconductor device with high electric field effect mobility |
| 05/15/2001 | US6232621 Semiconductor device and method of fabricating the same |
| 05/15/2001 | US6232241 Pre-oxidation cleaning method for reducing leakage current of ultra-thin gate oxide |
| 05/15/2001 | US6232227 Method for making semiconductor device |
| 05/15/2001 | US6232224 Method of manufacturing semiconductor device having reliable contact structure |
| 05/15/2001 | US6232209 Semiconductor device and manufacturing method thereof |
| 05/15/2001 | US6232208 Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile |
| 05/15/2001 | US6232205 Method for producing a semiconductor device |
| 05/15/2001 | US6232193 Method of forming isolated integrated injection logic gate |
| 05/15/2001 | US6232192 Method of manufacturing semiconductor device having sidewall portions removed |
| 05/15/2001 | US6232187 Semiconductor device and manufacturing method thereof |
| 05/15/2001 | US6232186 Method for fabricating a radio frequency power MOSFET device having improved performance characteristics |
| 05/15/2001 | US6232185 Method of making a floating gate memory cell |
| 05/15/2001 | US6232182 Non-volatile semiconductor memory device including memory transistor with a composite gate structure and method of manufacturing the same |
| 05/15/2001 | US6232180 Split gate flash memory cell |
| 05/15/2001 | US6232179 Semiconductor device and method of manufacturing the same |
| 05/15/2001 | US6232173 Process for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one substrate and process for forming a new NVRAM cell structure |
| 05/15/2001 | US6232169 Method for producing a capacitor |
| 05/15/2001 | US6232167 Method of producing a ferroelectric thin film coated substrate |
| 05/15/2001 | US6232164 Process of making CMOS device structure having an anti-SCE block implant |
| 05/15/2001 | US6232163 Method of forming a semiconductor diode with depleted polysilicon gate structure |
| 05/15/2001 | US6232160 Method of delta-channel in deep sub-micron process |
| 05/15/2001 | US6232158 Thin film transistor and a fabricating method thereof |
| 05/15/2001 | US6232157 Thin film transistors |
| 05/15/2001 | US6232156 Method of manufacturing a semiconductor device |
| 05/15/2001 | US6232155 Methods of fabricating semiconductor-on-insulator devices including alternating thin and thick film semiconductor regions on an insulating layer |
| 05/15/2001 | US6232145 Method and apparatus for filling a gap between spaced layers of a semiconductor |
| 05/15/2001 | US6232140 Semiconductor integrated capacitive acceleration sensor and relative fabrication method |
| 05/15/2001 | US6232138 Creating lattice-mismatched devices based on relaxed ingaas alloys. |
| 05/15/2001 | US6232136 Method of transferring semiconductors |
| 05/15/2001 | US6230564 Semiconductor acceleration sensor and its self-diagnosing method |
| 05/15/2001 | US6230400 Method for forming interconnects |
| 05/10/2001 | WO2001033634A1 Imager with reduced fet photoresponse and high integrity contact via |
| 05/10/2001 | WO2001033633A1 Semiconductor memory and method of driving semiconductor memory |
| 05/10/2001 | WO2001033632A1 Planar hybrid diode rectifier bridge |
| 05/10/2001 | WO2001033627A1 Spacer process to eliminate isolation trench corner transistor device |
| 05/10/2001 | WO2001033622A1 Solid-source doping for source/drain of flash memory |
| 05/10/2001 | WO2001033619A1 Gate dielectrics and method of making with binary non-crystaline analogs of silicon dioxide |
| 05/10/2001 | WO2001033571A1 Flash memory wordline tracking across whole chip |
| 05/10/2001 | WO2000041459A3 Semiconductor element with a tungsten oxide layer and method for its production |
| 05/10/2001 | US20010001079 Electrode structure and method for fabricating the same |
| 05/10/2001 | US20010001076 Semiconductor device with no step between well regions |
| 05/10/2001 | US20010001075 Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration |
| 05/10/2001 | US20010001074 Controllable oxidation technique for high quality ultra-thin gate oxide |
| 05/10/2001 | US20010001073 Semiconductor device and method for forming the same |
| 05/10/2001 | US20010001072 Body-potential drawing region can draw and fix a body potential |
| 05/10/2001 | US20010001045 Substrate for high frequency integrated circuits |
| 05/10/2001 | US20010000993 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield |
| 05/10/2001 | US20010000950 Method for elimination of parasitic bipolar action in silicon on insulator (SOI) dynamic logic circuits |
| 05/10/2001 | US20010000926 Method and materials for through-mask electroplating and selective base removal |
| 05/10/2001 | US20010000923 Thin film capacitor having an improved bottom electrode and method of forming the same |
| 05/10/2001 | US20010000921 Method for elimination of parasitic bipolar action in silicon on insulator (SOI) dynamic logic circuits |
| 05/10/2001 | US20010000919 MOS-gated power device having extended trench and doping zone and process for forming same |
| 05/10/2001 | DE10050511A1 Pressure sensor with control device for measuring fluid pressure, has source current adjuster which alters value of source current flowing through DC input connections, according to different types of pressure sensor elements |
| 05/10/2001 | DE10043854A1 Capacitive acceleration sensor with increased support for stationary element of capacitor structure |
| 05/09/2001 | EP1098439A1 Switching circuit |
| 05/09/2001 | EP1098372A2 Method of preventing boron diffusion in a semiconductor structure by creating nitrogen barriers and the corresponding structure |
| 05/09/2001 | EP1098371A2 A semiconductor device with good reverse recovery withstand and the method of manufacturing the same |
| 05/09/2001 | EP1098364A1 Fabrication method for vertical power components |
| 05/09/2001 | EP1098358A2 Method for making field effect devices and capacitors with thin film dielectrics and resulting devices |
| 05/09/2001 | EP1098355A1 Powerdetector component |
| 05/09/2001 | EP1098259A2 Rate equation method and apparatus for simulation of current in a mos device |
| 05/09/2001 | EP1098183A2 Semiconductive pressure sensor |
| 05/09/2001 | EP1098182A2 Semiconductive pressure sensor |
| 05/09/2001 | EP1098181A2 Method for making diaphragm-based sensors and apparatus constructed therewith |
| 05/09/2001 | EP1098170A2 Microgyroscope with two resonant plates |
| 05/09/2001 | EP1097482A1 J-fet semiconductor device |
| 05/09/2001 | EP1097481A2 Power semiconductor component for high blocking voltages |
| 05/09/2001 | EP1097480A1 Semi-conductor element with an emitter area and a stop zone in a pre-mounted position thereto |
| 05/09/2001 | CN1294760A Vacuum field transistor |
| 05/09/2001 | CN1294755A Method for generating electrical conducting or semiconducting structures in two or three dimensions, method for erasing same structures and electric field generator/modulator |
| 05/09/2001 | CN1294701A TFT array substrate for liquid crystal display and method of producing same, and liquid crystal display and method of producing same |
| 05/09/2001 | CN1294415A Vertical MOS transistor |
| 05/09/2001 | CN1294414A Horizontal heterojunction dual-polar triode and its mfg. method |
| 05/09/2001 | CN1294411A Method for mfg. lightly mixed leakage polar/bias structure of thin film transistor |
| 05/09/2001 | CN1294303A Miniature mechanical appts. |
| 05/09/2001 | CN1065658C Method for fabricating capacitor of semiconductor device and capacitor |
| 05/08/2001 | US6229734 Nonvolatile semiconductor storage device having controlled cell threshold voltage distribution |
| 05/08/2001 | US6229531 Active matrix display device |
| 05/08/2001 | US6229511 Active matrix substrate and method for fabricating the same |
| 05/08/2001 | US6229212 Integrated circuitry and thin film transistors |
| 05/08/2001 | US6229198 Non-uniform gate doping for reduced overlap capacitance |
| 05/08/2001 | US6229197 Epitaxial overgrowth method and devices |
| 05/08/2001 | US6229196 Semiconductor device and fabrication method thereof |
| 05/08/2001 | US6229188 MOS field effect transistor and its manufacturing method |
| 05/08/2001 | US6229187 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer |
| 05/08/2001 | US6229184 Semiconductor device with a modulated gate oxide thickness |
| 05/08/2001 | US6229182 Semiconductor device having protection against electrostatic discharge |
| 05/08/2001 | US6229180 MOS type semiconductor apparatus |
| 05/08/2001 | US6229179 Intelligent power integrated circuit |
| 05/08/2001 | US6229178 Vertical double diffused MOSFET and method for manufacturing same |
| 05/08/2001 | US6229177 Semiconductor with laterally non-uniform channel doping profile |
| 05/08/2001 | US6229176 Split gate flash with step poly to improve program speed |
| 05/08/2001 | US6229175 Nonvolatile memory |