| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/25/2002 | US6410965 Annular SCR device |
| 06/25/2002 | US6410961 Thin film semiconductor device and display device |
| 06/25/2002 | US6410959 Method of fabricating semiconductor device |
| 06/25/2002 | US6410958 Power MOSFET having laterally three-layered structure formed among element isolation regions |
| 06/25/2002 | US6410952 MOSFET with a thin gate insulating film |
| 06/25/2002 | US6410950 Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode |
| 06/25/2002 | US6410947 Semiconductor device and process of production of same |
| 06/25/2002 | US6410946 Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer |
| 06/25/2002 | US6410945 Usable in a monolithic microwave integrated circuit for a portable telephone. for preventing the thermal runaway, it is known to change the composition ratio of aluminum in an algaas emitter layer and to provide a ballast resistor. |
| 06/25/2002 | US6410944 Very high density doped p-type gaas or graded p-type al-ga-as reduces the potential barrier formed in the p-type gan, thus significantly reducing the ohmic resistance. |
| 06/25/2002 | US6410934 Silicon nanoparticle electronic switches |
| 06/25/2002 | US6410905 CCD with enhanced output dynamic range |
| 06/25/2002 | US6410460 Forming metal oxides, nitrides, carbides or phosphides by high temperature vacuum deposition of intermetallics on silicon carbide; electroconductivity; integrated circuits |
| 06/25/2002 | US6410452 Method of manufacturing semiconductor device |
| 06/25/2002 | US6410430 Enhanced ultra-shallow junctions in CMOS using high temperature silicide process |
| 06/25/2002 | US6410412 Methods for fabricating memory devices |
| 06/25/2002 | US6410411 Sputtering chromium nitride thin film as electrode of circuit elements; thin film transistors |
| 06/25/2002 | US6410410 Method of forming lightly doped regions in a semiconductor device |
| 06/25/2002 | US6410404 Process for manufacturing SOI integrated circuits and circuits made thereby |
| 06/25/2002 | US6410398 Device for the adjustment of circuits after packaging, corresponding fabrication process and induction device |
| 06/25/2002 | US6410396 Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications |
| 06/25/2002 | US6410395 Epitaxial deposition of two monocrystalline silicon layers and silicon germanium middle layer; forming base zone; doping at later stage; npn and pnp transistors |
| 06/25/2002 | US6410393 Semiconductor device with asymmetric channel dopant profile |
| 06/25/2002 | US6410392 Method of producing MOS transistor |
| 06/25/2002 | US6410390 Nonvolatile memory device and method for fabricating the same |
| 06/25/2002 | US6410389 Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same |
| 06/25/2002 | US6410387 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry |
| 06/25/2002 | US6410382 Fabrication method of semiconductor device |
| 06/25/2002 | US6410379 Method of forming a submerged semiconductor structure |
| 06/25/2002 | US6410375 Methods of forming transistors including gate dielectric layers having different nitrogen concentrations |
| 06/25/2002 | US6410373 Method of forming polysilicon thin film transistor structure |
| 06/25/2002 | US6410372 Manufacture of thin film transistors |
| 06/25/2002 | US6410371 Wafer bonding and removal of undesired portion of substrate to form an upper silicon layer; increased electron mobility |
| 06/25/2002 | US6410370 Capacitor for a semiconductor device |
| 06/25/2002 | US6410368 Method of manufacturing a semiconductor device with TFT |
| 06/25/2002 | US6410364 Semiconductor device, method of connecting a semiconductor chip, circuit board, and electronic equipment |
| 06/25/2002 | US6410343 C-axis oriented lead germanate film and deposition method |
| 06/25/2002 | US6410210 Gel overcoating substrate; radiaition resistance titanium oxide |
| 06/25/2002 | US6410162 Zinc oxide films containing P-type dopant and process for preparing same |
| 06/25/2002 | CA2245759C Rf diode and method of manufacturing same |
| 06/20/2002 | WO2002049124A2 Molecular electro-optical switching or memory device, and method of making the same |
| 06/20/2002 | WO2002049118A2 Trench schottky barrier rectifier and method of making the same |
| 06/20/2002 | WO2002049117A1 Semiconductor diode device |
| 06/20/2002 | WO2002049116A2 Vertical junction field effect semiconductor diodes |
| 06/20/2002 | WO2002049115A1 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
| 06/20/2002 | WO2002049114A2 High withstand voltage semiconductor device |
| 06/20/2002 | WO2002049092A1 Method for the manufacture of a semiconductor device with a field-effect transistor |
| 06/20/2002 | WO2002049081A2 Rf power bipolar junction transistor having performance-enhancing emitter structure |
| 06/20/2002 | WO2002048701A2 Nanosensors |
| 06/20/2002 | WO2002048668A2 Integrated cmos capacitive pressure sensor |
| 06/20/2002 | WO2002025725A3 Semiconductor device and process for forming the same |
| 06/20/2002 | WO2002021599A3 Compound semiconductor multilayer structure and bipolar transistor using the same |
| 06/20/2002 | WO2002009157A3 Alkali earth metal oxide gate insulators |
| 06/20/2002 | US20020078430 Manufacturing method of semiconductor device |
| 06/20/2002 | US20020078087 Content indicator for accelerated detection of a changed web page |
| 06/20/2002 | US20020077799 Delay time estimation method and recording medium storing estimation program |
| 06/20/2002 | US20020076936 Method of fabricating semiconductor integrated circuit device and the semiconductor integrated circuit device |
| 06/20/2002 | US20020076930 Etchant and method for fabricating a substrate for an electronic device using the same |
| 06/20/2002 | US20020076893 Method for manufacturing a bipolar junction transistor |
| 06/20/2002 | US20020076892 Method for manufacturing a bipolar junction transistor |
| 06/20/2002 | US20020076891 Semiconductor device and method for fabricating the same |
| 06/20/2002 | US20020076890 Silicon carbide: germanium (sic:ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications |
| 06/20/2002 | US20020076889 Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication |
| 06/20/2002 | US20020076888 Method for manufacturing semiconductor device |
| 06/20/2002 | US20020076887 Method of making a low leakage dynamic threshold voltage mos (dtmos) transistor |
| 06/20/2002 | US20020076886 Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide |
| 06/20/2002 | US20020076876 Method for manufacturing semiconductor devices having ESD protection |
| 06/20/2002 | US20020076871 Cold-curing silicone compositions, in particular those of the two-component type |
| 06/20/2002 | US20020076869 Gate insulation film having a slanted nitrogen concentration profile |
| 06/20/2002 | US20020076868 MOS transistor in an integrated circuit and active area forming method |
| 06/20/2002 | US20020076867 Method of forming a metal gate in a semiconductor device |
| 06/20/2002 | US20020076865 Electrical interconnection and thin film transistor fabrication mehods, and integrated circuitry |
| 06/20/2002 | US20020076862 Thin film transistor and method for manufacturing the same |
| 06/20/2002 | US20020076861 Method for fabricating array substrate for X-ray detector |
| 06/20/2002 | US20020076860 Method of fabricating power VLSI diode devices |
| 06/20/2002 | US20020076851 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
| 06/20/2002 | US20020076850 Device structure for storing charge and method therefore |
| 06/20/2002 | US20020076844 Method of fabricating an imager array |
| 06/20/2002 | US20020076837 Thin films for magnetic device |
| 06/20/2002 | US20020076703 A substrate; a first electrode and a second electrode spaced apart from each other on the substrate and a block copolymer string (having width of less than 50 nm) positioned on the substrate between two electrodes |
| 06/20/2002 | US20020075924 Semiconductor device with quantum dots having high carrier injection efficiency, its manufacture method, and semiconductor laser device |
| 06/20/2002 | US20020075725 Fast program to program verify method |
| 06/20/2002 | US20020075424 Liquid cyrstal display device |
| 06/20/2002 | US20020075423 Reflective liquid crystal display device |
| 06/20/2002 | US20020075254 Contact between element to be driven and thin film transistor for supplying power to element to be driven |
| 06/20/2002 | US20020075043 Push-pull amplifier for use in generating a reference voltage |
| 06/20/2002 | US20020074658 High-resistivity metal in a phase-change memory cell |
| 06/20/2002 | US20020074655 Semiconductor device and method of manufacturing the same |
| 06/20/2002 | US20020074624 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| 06/20/2002 | US20020074622 Ammonia gas passivation on nitride encapsulated devices |
| 06/20/2002 | US20020074613 Trench schottky barrier rectifier and method of making the same |
| 06/20/2002 | US20020074612 Fabrication of field-effect transistor for alleviating short-channel effects and/or reducing junction capacitance |
| 06/20/2002 | US20020074608 Protection circuit and semiconductor device |
| 06/20/2002 | US20020074607 Bipolar transistor produced using processes compatible with those employed in the manufacture of MOS devices |
| 06/20/2002 | US20020074606 Electrostatic discharge resistant extended drain metal oxide semiconductor transistor |
| 06/20/2002 | US20020074604 Dual direction over-voltage and over-current IC protection device and its cell structure |
| 06/20/2002 | US20020074599 Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents |
| 06/20/2002 | US20020074597 Semiconductor transistor devices and methods for forming semiconductor transistor devices |
| 06/20/2002 | US20020074596 Semiconductor device having a super junction structure |
| 06/20/2002 | US20020074595 Method of fabricating power rectifier device to vary operating parameters and resulting device |