| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/01/2002 | US20020102814 Trench fill process for reducing stress in shallow trench isolation |
| 08/01/2002 | US20020102806 Method of producing a thin film resistor in an integrated circuit |
| 08/01/2002 | US20020102805 Method for forming shallow junction |
| 08/01/2002 | US20020102804 Semiconductor device and manufacturing method of the semiconductor device |
| 08/01/2002 | US20020102803 Technique for gated lateral bipolar transistors |
| 08/01/2002 | US20020102800 Method for the manufacture of a semiconductor device with a field-effect transistor |
| 08/01/2002 | US20020102798 Method for fabricating a self aligned s/d cmos device on insulated layer by forming a trench along the sti and fill with oxide |
| 08/01/2002 | US20020102797 Composite gate dielectric layer |
| 08/01/2002 | US20020102795 Field coupled power MOSFET bus architecture using trench technology |
| 08/01/2002 | US20020102794 Method of manufacturing semiconductor device, nonvolatile semiconductor memory device and method of manufacturing the same |
| 08/01/2002 | US20020102788 Method of making vertical diode structures |
| 08/01/2002 | US20020102787 Passivation for improved bipolar yield |
| 08/01/2002 | US20020102786 Trench MOSFET formed using selective epitaxial growth |
| 08/01/2002 | US20020102784 Method to form a vertical transistor by selective epitaxial growth and delta doped silicon layers |
| 08/01/2002 | US20020102783 Semiconductor device and method of manufacturing the same |
| 08/01/2002 | US20020102782 Semiconductor device with two types of FET's having different gate lengths and its manufacture method |
| 08/01/2002 | US20020102781 Method for fabricating polysilicon thin film transistor |
| 08/01/2002 | US20020102777 Thin-film semiconductor device and method of manufacturing the same |
| 08/01/2002 | US20020102776 Semiconductor device and method of manufacturing the same |
| 08/01/2002 | US20020102774 Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates |
| 08/01/2002 | US20020102773 Thin film transistor and method of fabricating the same |
| 08/01/2002 | US20020102758 Method of manufacturing display device |
| 08/01/2002 | US20020102358 Forming an insulator by fabricating a nitrided oxide layer on a layer of silicon carbide; and annealing the nitrided oxide layer in an environment containing hydrogen. |
| 08/01/2002 | US20020101754 Semiconductor memory device including an SOI |
| 08/01/2002 | US20020101557 Liquid crystal display device |
| 08/01/2002 | US20020101548 Structure of a liquid crystal display and the method of manufacturing the same |
| 08/01/2002 | US20020101398 Electro-optical panel and electronic device |
| 08/01/2002 | US20020101394 Thin film transistor for supplying power to element to be driven |
| 08/01/2002 | US20020101273 Semiconductor device |
| 08/01/2002 | US20020101152 Light emitting device |
| 08/01/2002 | US20020100954 Circuit for generating an asynchronous signal pulse |
| 08/01/2002 | US20020100951 Offset-gate-type semiconductor device |
| 08/01/2002 | US20020100950 P-i-n transit time silicon-on-insulator device |
| 08/01/2002 | US20020100948 Semiconductor dynamic quantity sensor |
| 08/01/2002 | US20020100947 Method for forming variable-K gate dielectric |
| 08/01/2002 | US20020100946 Silicon oxide based gate dielectric layer |
| 08/01/2002 | US20020100945 Method for delineation of eDRAM support device notched gate |
| 08/01/2002 | US20020100944 Semiconductor integrated circuit device |
| 08/01/2002 | US20020100943 Method of manufacturing semiconductor device, and semiconductor device manufactured thereby |
| 08/01/2002 | US20020100939 Method of manufacturing a semiconductor device |
| 08/01/2002 | US20020100938 Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance |
| 08/01/2002 | US20020100937 Semiconductor device and method of manufacturing the same |
| 08/01/2002 | US20020100936 Gate insulating structure for power devices, and related manufacturing process |
| 08/01/2002 | US20020100935 High breakdown voltage semiconductor device |
| 08/01/2002 | US20020100934 High voltage semiconductor device |
| 08/01/2002 | US20020100933 Field effect transistor having a lateral depletion structure |
| 08/01/2002 | US20020100932 Method of forming a trench transistor having a superior gate dielectric |
| 08/01/2002 | US20020100931 Method and composite for decreasing charge leakage |
| 08/01/2002 | US20020100930 Non-volatile semiconductor memory device and method of manufacturing the same |
| 08/01/2002 | US20020100929 Semiconductor integrated circuit device including nonvolatile semiconductor memory devices |
| 08/01/2002 | US20020100928 Nonvolatile semiconductor device and fabrication process for the same |
| 08/01/2002 | US20020100927 Semiconductor device |
| 08/01/2002 | US20020100926 Semiconductor device having a flash memory cell and fabrication method thereof |
| 08/01/2002 | US20020100923 Method for producing an electrode of a field-effect-controllable semiconductor component and field-effect-controllable semiconductor component |
| 08/01/2002 | US20020100918 T-RAM array having a planar cell structure and method for fabricating the same |
| 08/01/2002 | US20020100917 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for si-ge bipolar technology |
| 08/01/2002 | US20020100916 Self aligned symmetric intrinsic process and device |
| 08/01/2002 | US20020100909 Thin film transistor |
| 08/01/2002 | US20020100908 Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device |
| 08/01/2002 | US20020100904 Dual work function semiconductor structure with borderless contact and method of fabricating the same |
| 08/01/2002 | US20020100412 Low dislocation buffer and process for production thereof as well as device provided with low dislocation buffer |
| 08/01/2002 | DE10203820A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 08/01/2002 | DE10161058A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 08/01/2002 | DE10145045A1 Integrierter Schaltkreis mi einem tiefen Wannen-Bereich und dazu gehöriges Verfahren Integrated circuit mi a deep well region and associated method |
| 08/01/2002 | DE10111708A1 Halbleitervorrichtung und Herstellungsverfharen für dieselbe Semiconductor device and for the same Herstellungsverfharen |
| 08/01/2002 | DE10104015A1 Optischer Detektor und Verfahren zum Herstellen einer Anordnung mehrerer Halbleiterschichten Optical detector and method of manufacturing an arrangement of several semiconductor layers |
| 07/31/2002 | EP1227588A1 Unipolar transistor and power converter comprising it |
| 07/31/2002 | EP1227523A2 High-Voltage transistor with buried conduction layer and method of making the same |
| 07/31/2002 | EP1227522A2 High breakdown voltage semiconductor device |
| 07/31/2002 | EP1227521A2 A method to form a transistor with multiple threshold voltages using a combination of different work function gate materials |
| 07/31/2002 | EP1227520A2 Solid-state relay |
| 07/31/2002 | EP1227519A2 Semiconductor integrated circuit device including nonvolatile semiconductor memory devices |
| 07/31/2002 | EP1227518A2 Method of manufacturing semiconductor integrated circuit device including nonvolatile semiconductor memory devices |
| 07/31/2002 | EP1227516A2 Thin film semiconductor device, production process and production apparatus |
| 07/31/2002 | EP1227514A2 Method for forming a gate dielectric with high-K and low-K regions |
| 07/31/2002 | EP1227513A2 Method for forming variable-K gate dielectric |
| 07/31/2002 | EP1227501A2 Programming and erasing methods for an NROM array |
| 07/31/2002 | EP1227498A2 An EEPROM array and method for operation thereof |
| 07/31/2002 | EP1227469A2 Liquid crystal device |
| 07/31/2002 | EP1226878A2 Aligned fine particles, method for producing the same and device using the same |
| 07/31/2002 | EP1226608A2 Inpsb/inas bjt device and method of making |
| 07/31/2002 | EP1226606A1 Spacer process to eliminate isolation trench corner transistor device |
| 07/31/2002 | EP1226586A1 Flash memory wordline tracking across whole chip |
| 07/31/2002 | EP0792524B1 Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes |
| 07/31/2002 | CN2503609Y Diode for nanometre silicon microwave switch |
| 07/31/2002 | CN2503608Y Silicon microwave power chip of super-autoregistered submicron structure |
| 07/31/2002 | CN1361924A Method of producing a non-volatile semiconductor memory cell with a separate tunnel winidow |
| 07/31/2002 | CN1361552A Semi-conductor integrated circuit apparatus and its producing method |
| 07/31/2002 | CN1361551A Method for producing semi-conductor device |
| 07/31/2002 | CN1088542C Field effect transistor capable of reducing delay change |
| 07/30/2002 | US6426897 Method of erasing a flash memory device |
| 07/30/2002 | US6426896 Flash memory cell with contactless bit line, and process of fabrication |
| 07/30/2002 | US6426894 Method and circuit for writing data to a non-volatile semiconductor memory device |
| 07/30/2002 | US6426892 Nonvolatile semiconductor memory device for storing multivalued data |
| 07/30/2002 | US6426667 Bidirectional analog switch using two bipolar junction transistors which are both reverse connected or operating in the reverse or inverse mode |
| 07/30/2002 | US6426665 Semiconductor device |
| 07/30/2002 | US6426547 Lateral polysilicon pin diode and method for so fabricating |
| 07/30/2002 | US6426543 Semiconductor device including high-frequency circuit with inductor |
| 07/30/2002 | US6426542 Schottky diode with dielectric trench |
| 07/30/2002 | US6426541 Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication |