Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/23/2002 | US6423587 Method for fabricating a MOS transistor |
07/23/2002 | US6423585 Heating treatment device, heating treatment method and fabrication method of semiconductor device |
07/23/2002 | US6423584 method for forming capacitors and field effect transistors in a semiconductor integrated circuit device |
07/23/2002 | US6423583 Methodology for electrically induced selective breakdown of nanotubes |
07/23/2002 | US6423582 Use of DAR coating to modulate the efficiency of laser fuse blows |
07/23/2002 | US6423578 Field-effect transistor and manufacture thereof |
07/23/2002 | US6423562 Exposing n-type contact layer of gallium nitride-based compound semiconductor to oxygen plasma to form oxygen-doped surface layer in surface of contact layer, forming electrode metal on oxygen-doped layer |
07/23/2002 | US6423553 Method of making a magnetoelectronic device |
07/23/2002 | US6423286 Alkali metal clathrates with silicon, heating under vacuum and decomposition |
07/23/2002 | US6423271 Multilayer lamination device, exterior support, fluid pumps |
07/18/2002 | WO2002056394A1 Electrode structures for p-type nitride semiconductores and mehtods of making same |
07/18/2002 | WO2002056387A1 Schottky diode |
07/18/2002 | WO2002056385A2 Optically powered resonant tunneling device |
07/18/2002 | WO2002056380A1 A method of manufacturing an active matrix substrate |
07/18/2002 | WO2002056359A1 Capping layer for improved silicide formation in narrow semiconductor structures |
07/18/2002 | WO2002056354A1 Method for forming a pattern and a semiconductor device |
07/18/2002 | WO2002056046A1 Device for detecting a magnetic field, magnetic field measurer and current meter |
07/18/2002 | WO2002056045A2 Device for sensing a magnetic field, a magnetic field meter and an ammeter |
07/18/2002 | WO2002055967A1 Micromechanical flow sensor with a tensile coating |
07/18/2002 | WO2002009158A3 Semiconductor structure including a magnetic tunnel junction |
07/18/2002 | WO2001099162A3 Gate oxidation for vertical trench device |
07/18/2002 | WO2001082380A3 Power semiconductor device having a trench gate electrode and method of making the same |
07/18/2002 | WO2001080306A3 Automated process monitoring and analysis system for semiconductor processing |
07/18/2002 | WO2001061735A3 Implantation mask for high energy ion implantation |
07/18/2002 | WO2000068997A9 Mosfet with field reducing trenches in body region |
07/18/2002 | WO2000067327A9 Minimally-patterned semiconductor devices for display applications |
07/18/2002 | US20020095273 Method of extracting physical model parameter and storage medium therefor, and method of manufacturing non-linear element |
07/18/2002 | US20020094678 Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate |
07/18/2002 | US20020094670 Semiconductor device having bonding pad electrode of multi-layer structure |
07/18/2002 | US20020094667 Semiconductor device and a method for production thereof |
07/18/2002 | US20020094661 Three dimensional device intergration method and intergrated device |
07/18/2002 | US20020094660 Spacer elements for interactive information devices and method for making same |
07/18/2002 | US20020094658 Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter EPI layer |
07/18/2002 | US20020094654 Aluminum gallium nitride layer; preventing crack generation; light emitting and laser diodes |
07/18/2002 | US20020094653 Trench capacitors in soi substrstes |
07/18/2002 | US20020094652 Graded layer for use in semiconductor circuits and method for making same |
07/18/2002 | US20020094650 Field effect transistor and method of fabrication |
07/18/2002 | US20020094647 Method of manufacturing a semiconductor device |
07/18/2002 | US20020094643 Mos device having a passivated semiconductor-dielectric interface |
07/18/2002 | US20020094642 Semiconductor device and method of manufacturing the same |
07/18/2002 | US20020094641 Method for fabricating floating gate |
07/18/2002 | US20020094640 P-channel dynamic flash memory cells with ultrathin tunnel oxides |
07/18/2002 | US20020094639 Inexpensive, reliable, planar RFID tag structure and method for making same |
07/18/2002 | US20020094638 Method for manufacturing nonvolatile semiconductor memory with narrow variation in threshold voltages of memory cells |
07/18/2002 | US20020094636 Method and structure for an improved floating gate memory cell |
07/18/2002 | US20020094635 Method for fabricating a trench MOS power transistor |
07/18/2002 | US20020094633 Semiconductor device and method of manufacturing the same |
07/18/2002 | US20020094630 Charge coupled device and method of fabricating the same |
07/18/2002 | US20020094629 SOI type integrated circuit with a decoupling capacity and process for embodiment of such a circuit |
07/18/2002 | US20020094622 Process flow for a performance enhanced MOSFET with self-aligned, recessed channel |
07/18/2002 | US20020094621 Methods of forming a nitrogen enriched region |
07/18/2002 | US20020094620 Transistor Structures |
07/18/2002 | US20020094618 Field effect transistor and method of fabrication |
07/18/2002 | US20020094616 Four transistors static-random-access-memory and forming method |
07/18/2002 | US20020094615 Semiconductor device and method for manufacturing the same |
07/18/2002 | US20020094614 Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage |
07/18/2002 | US20020094613 Method of manufacturing semiconductor device |
07/18/2002 | US20020094612 Method of manufacturing semiconductor device |
07/18/2002 | US20020094605 Method for fabricating a stacked chip package |
07/18/2002 | US20020093851 Semiconductor memory and its usage |
07/18/2002 | US20020093600 Array substrate for a liquid crystal display device and method of manufacturing the same |
07/18/2002 | US20020093581 X-ray imaging device |
07/18/2002 | US20020093102 Transistor with ESD protection |
07/18/2002 | US20020093094 Semiconductor device |
07/18/2002 | US20020093073 Semiconductor device having two-layered charge storage electrode |
07/18/2002 | US20020093068 Magnetoelectronic memory element with inductively coupled write wires |
07/18/2002 | US20020093066 Method for forming a gate of a high integration semiconductor device |
07/18/2002 | US20020093065 Semiconductor device and method of manufacturing the same |
07/18/2002 | US20020093064 Semiconductor device and method of fabricating the same |
07/18/2002 | US20020093063 Method and composite for decreasing charge leakage |
07/18/2002 | US20020093062 Power semiconductor switching devices, power converters, integrated circuit assemblies, Integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
07/18/2002 | US20020093061 Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method |
07/18/2002 | US20020093056 Esd protection network with field oxide device and bonding pad |
07/18/2002 | US20020093053 Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques |
07/18/2002 | US20020093052 Semiconductor device |
07/18/2002 | US20020093051 Semiconductor device and process for same |
07/18/2002 | US20020093050 Trench MOS transistor |
07/18/2002 | US20020093049 Field effect-controllable semiconductor component with two-directional blocking, and a method of producing the semiconductor component |
07/18/2002 | US20020093048 Devices and methods for addressing optical edge effects in connection with etched trenches |
07/18/2002 | US20020093046 Semiconductor device and its production process |
07/18/2002 | US20020093045 P-channel dynamic flash memory cells with ultrathin tunnel oxides |
07/18/2002 | US20020093044 Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereof |
07/18/2002 | US20020093040 Semiconductor device and method of manufacturing the same |
07/18/2002 | US20020093039 Optimized reachthrough implant for simultaneously forming an MOS capacitor |
07/18/2002 | US20020093038 Pressure transducer and manufacturing method thereof |
07/18/2002 | US20020093033 Non-uniform power semiconductor and method for making |
07/18/2002 | US20020093031 Heterojunction bipolar transistor |
07/18/2002 | US20020093030 T-RAM array having a planar cell structure and method for fabricating the same |
07/18/2002 | US20020093028 Semiconductor device and a process for manufacturing the same |
07/18/2002 | US20020093027 High aperture LCD with insulating color filters overlapping bus lines on active substrate |
07/18/2002 | US20020093021 Thin-film transistor display devices |
07/18/2002 | US20020093019 Electro-optical device, method for making the same, and electronic apparatus |
07/18/2002 | US20020093018 Semiconductor device and mehod for fabricating the same |
07/18/2002 | US20020093017 Metal induced self-aligned crystallization of Si layer for TFT |
07/18/2002 | US20020093016 Thin film transistor array substrate for liquid crystal display and a method for fabricating the same |
07/18/2002 | US20020093012 Method for manufacturing semiconductor device and ultrathin semiconductor device |
07/18/2002 | DE10164149A1 Programming non-volatile semiconducting memory involves applying voltage sequence to trough regions, programming voltage to word lines as trough area biased by coupling voltage |
07/18/2002 | DE10162976A1 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same |
07/18/2002 | DE10101825A1 Production of semiconductor component such as FET having a T form electrode using removable spacer layer to fix electrode position and width |
07/18/2002 | DE10100598A1 Vorrichtung zur Sensierung eines Magnetfeldes, Magnetfeldmesser und Strommesser Apparatus for sensing a magnetic field, magnetic field meter and ammeter |