Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2002
07/09/2002US6417478 Applying voltage
07/09/2002US6417114 Method for fabricating semiconductor integrated circuit device
07/09/2002US6417104 Forming conductive line for semiconductors, removal of stacks then annealing cobalt, followed by a silicon layer and a top insulator layer. the blanket stack is patterned
07/09/2002US6417086 Method of manufacturing semiconductor device having nonvolatile memory and logic circuit using multi-layered, inorganic mask
07/09/2002US6417085 Forming sio2 layer on substrate, depositing ta2o5 layer and conductive grate region, patterns for transistors and conductive metal nitride
07/09/2002US6417061 Zener diode and RC network combination semiconductor device for use in integrated circuits and method therefor
07/09/2002US6417059 Process for forming a silicon-germanium base of a heterojunction bipolar transistor
07/09/2002US6417058 SiGe/poly for low resistance extrinsic base npn transistor
07/09/2002US6417057 Method of forming a semiconductor device having a TFT utilizing optical annealing before a gate electrode is formed
07/09/2002US6417056 Method to form low-overlap-capacitance transistors by forming microtrench at the gate edge
07/09/2002US6417054 Method for fabricating a self aligned S/D CMOS device on insulated layer by forming a trench along the STI and fill with oxide
07/09/2002US6417052 Fabrication process for semiconductor device
07/09/2002US6417051 Method of manufacturing memory device including insulated gate field effect transistors
07/09/2002US6417050 Semiconductor component and method of manufacture
07/09/2002US6417049 Split gate flash cell for multiple storage
07/09/2002US6417047 Manufacturing method of a non-volatile semiconductor memory device having isolation regions
07/09/2002US6417046 Modified nitride spacer for solving charge retention issue in floating gate memory cell
07/09/2002US6417044 Non-volatile memory and memory of manufacturing the same
07/09/2002US6417035 Method for manufacturing a field effect transistor
07/09/2002US6417031 Method of manufacturing a semiconductor device
07/09/2002US6417030 Leaky lower interface for reduction of floating body effect in SOI devices
07/09/2002US6417025 Integrated circuit packages assembled utilizing fluidic self-assembly
07/09/2002US6417021 Method of fabricating a piezoresistive pressure sensor
07/09/2002US6415664 Angular velocity sensor capable of preventing unnecessary oscillation
07/09/2002US6415663 Angular velocity sensor
07/04/2002WO2002052653A1 Nonplanar semiconductor devices provided with a cylindrical closed effective layer
07/04/2002WO2002052652A1 Semiconductor device and its manufacturing method
07/04/2002WO2002052626A2 Method for producing a microelectronic component and component produced according to said method
07/04/2002WO2002052625A2 Process of forming p-n layer
07/04/2002WO2002052573A1 Semiconductor device comprising eeprom and a flash-eprom
07/04/2002WO2002051742A2 Micromechanical component and corresponding production method
07/04/2002WO2002051741A2 Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method
07/04/2002WO2002001644A3 Power mosfet and methods of forming and operating the same
07/04/2002WO2001099153A3 A negative differential resistance device and method of operating same
07/04/2002WO2001091162A3 Bipolar transistor and method of manufacture thereof
07/04/2002WO2001075960A3 Method of making a trench gate dmos transistor
07/04/2002WO2001071817A3 Dmos transistor having a trench gate electrode and method of making the same
07/04/2002WO2001069657A8 Thermal diode for energy conversion
07/04/2002US20020087298 Simulation method, simulation program, and semiconductor device manufacturing method each employing boundary conditions
07/04/2002US20020086556 Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices
07/04/2002US20020086555 Methods of forming silicon-Doped Aluminum oxide, and methods of forming tranisistors and memory devices
07/04/2002US20020086548 Method for forming gate dielectric layer in NROM
07/04/2002US20020086542 Fabrication of semiconductor devices
07/04/2002US20020086521 Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices
07/04/2002US20020086510 Technique to produce isolated junctions by forming an insulation layer
07/04/2002US20020086507 Method of forming a metal gate in a semiconductor device
07/04/2002US20020086505 Transistor structure having silicide soure/drain extensions
07/04/2002US20020086504 Method of manufacturing semiconductor devices
07/04/2002US20020086503 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures
07/04/2002US20020086491 Semiconductor device having a metal gate with a work function compatible with a semiconductor device
07/04/2002US20020086488 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor
07/04/2002US20020086486 Method of manufacturing semiconductor device and the semiconductor device
07/04/2002US20020086483 Fabrication method of single electron tunneling transistors using a focused-ion beam
07/04/2002US20020086482 Method and structure for an improved floating gate memory cell
07/04/2002US20020086472 Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
07/04/2002US20020086471 Single crystal TFT from continuous transition metal delivery method
07/04/2002US20020086470 Method for crystallizing amorphous silicon and fabricating thin film transistor using crystallized silicon
07/04/2002US20020086469 Method for fabricating polysilicon thin film transistor
07/04/2002US20020086468 Crystallization method of amorphous silicon
07/04/2002US20020086445 Method for fabricating a dual metal gate for a semiconductor device
07/04/2002US20020085973 Preparing metal nitride thin film employing amine-adduct single-source precursor
07/04/2002US20020085954 Depositing an inorganic sol-gel permeation layer on a micro-electronic device for molecular biological reactions; can be created with pre-defined porosity, pore size distribution, pore morphology, and surface area.
07/04/2002US20020085603 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
07/04/2002US20020085157 Active matrix addressing liquid-crystal display device
07/04/2002US20020085139 Liquid crystal display device and fabricating method thereof
07/04/2002US20020085137 Liquid-crystal display device with improved yield of production and method of fabricating the same
07/04/2002US20020084747 Light emitting device and production method thereof
07/04/2002US20020084746 Contact between element to be driven and thin film transistor for supplying power to element to be driven
07/04/2002US20020084513 Integrated circuits and methods for their fabrication
07/04/2002US20020084511 Semiconductor device
07/04/2002US20020084498 Methods for manufacturing semiconductor devices and semiconductor devices
07/04/2002US20020084497 Composite transistor having a slew-rate control
07/04/2002US20020084495 High performance PNP bipolar device fully compatible with CMOS process
07/04/2002US20020084494 Method for making high gain bipolar transistors in CMOS process
07/04/2002US20020084489 Semiconductor device
07/04/2002US20020084487 Semiconductor device
07/04/2002US20020084486 Metal gate double diffusion MOSFET with improved switching speed and reduced gate tunnel leakage
07/04/2002US20020084484 Semiconductor memory and method of manufacture thereof
07/04/2002US20020084483 Method and structure for an improved floating gate memory cell
07/04/2002US20020084482 Scalable dielectric
07/04/2002US20020084477 Semiconductor integrated circuit device and the process of manufacturing the same
07/04/2002US20020084476 Methods for manufacturing semiconductor devices and semiconductor devices
07/04/2002US20020084470 Semiconductor device and semiconductor device assembly
07/04/2002US20020084469 Linear image sensor integrated circuit
07/04/2002US20020084466 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
07/04/2002US20020084465 Thin-film transistors and method for producing the same
07/04/2002US20020084459 Thin film transistor substrate and fabricating method thereof
07/04/2002US20020084450 Semiconductor device and method for fabricating a semiconductor device
07/04/2002US20020083959 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
07/04/2002US20020083777 Capacitance-type external-force detecting device with improved sensitivity
07/04/2002US20020083775 Pressure transducer with composite diaphragm
07/04/2002US20020083557 Sequential lateral solidification apparatus includes a laser generator; X-Y stage movable in two orthogonal axial directions; and a mask between the laser generator and the X-Y stage.
07/04/2002DE10164585A1 Halbleitereinrichtung mit Anschlussstreifenelektrode einer Mehrlagenstruktur A semiconductor device with a multi-layer strip electrode connection structure
07/04/2002DE10162576A1 Ätzmittel und Ätzverfahren für Flüssigkristallanzeigevorrichtungen Etchant and etching processes for liquid crystal display devices
07/04/2002DE10158706A1 Semiconductor device e.g. metal oxide semiconductor transistor, has gate electrode with polysilicon layer having reverse tapering portion to enlarge distance between gate electrode and contact plug
07/04/2002DE10107923A1 Integrated SOI semiconductor circuit comprises an active transistor region, an active contact region, a semiconductor residual layer formed over a trenched insulating layer
07/04/2002DE10065026A1 Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren Micro-mechanical device and manufacturing method thereof
07/04/2002DE10065013A1 Micromechanical component used as an acceleration sensor or rotary sensor comprises a substrate, insulating layers, a micromechanical functional layer with conducting pathways, and a micromechanical functional layer with a trench
07/04/2002DE10064494A1 Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist A process for producing a semiconductor device as well as a product produced by the process semiconductor device, wherein the semiconductor component comprises in particular a movable mass
07/04/2002DE10064479A1 Verfahren zur Herstellung eines mikroelektronischen Bauelements A process for producing a microelectronic device