| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/18/2002 | US6406958 Method of manufacturing nonvolatile semiconductor memory device |
| 06/18/2002 | US6406957 Methods of forming field effect transistors and related field effect transistor constructions |
| 06/18/2002 | US6406952 Process for device fabrication |
| 06/18/2002 | US6406951 Fabrication of fully depleted field effect transistor with raised source and drain in SOI technology |
| 06/18/2002 | US6406947 Method of making a low leakage dynamic threshold voltage MOS (DTMOS) transistor |
| 06/18/2002 | US6406945 Method for forming a transistor gate dielectric with high-K and low-K regions |
| 06/18/2002 | US6406933 Production method for micromechanical components |
| 06/18/2002 | US6406795 Multilayer |
| 06/18/2002 | US6405592 Hermetically-sealed sensor with a movable microstructure |
| 06/13/2002 | WO2002047183A1 Organic field-effect transistor, method for structuring an ofet and integrated circuit |
| 06/13/2002 | WO2002047171A1 High voltage vertical conduction superjunction semiconductor device |
| 06/13/2002 | WO2002047170A1 Semiconductor device |
| 06/13/2002 | WO2002047168A2 Cmos inverter circuits utilizing strained silicon surface channel mosfets |
| 06/13/2002 | WO2002047160A2 Method for producing high-speed vertical npn bipolar transistors and complementary mos transistors on a chip |
| 06/13/2002 | WO2002047146A2 DAMASCENE NiSi METAL GATE HIGH-K TRANSISTOR |
| 06/13/2002 | WO2002047145A1 Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing |
| 06/13/2002 | WO2002047144A2 Patterned buried insulator |
| 06/13/2002 | WO2002047138A1 Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element |
| 06/13/2002 | WO2002047137A1 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device |
| 06/13/2002 | WO2002047113A2 Layers in substrate wafers |
| 06/13/2002 | WO2002046363A2 Improved methods for gene expression monitoring on electronic microarrays |
| 06/13/2002 | WO2002029899A3 High voltage insulated-gate bipolar switch |
| 06/13/2002 | WO2002029365A3 Freeze resistant sensor |
| 06/13/2002 | WO2002027800A3 Trench dmos transistor having lightly doped source structure |
| 06/13/2002 | WO2002025733A3 Non-volatile memory cell array and methods of forming |
| 06/13/2002 | WO2002015278A3 Multigate semiconductor device and method of fabrication |
| 06/13/2002 | WO2002009177A3 Power mosfet and method for forming same using a self-aligned body implant |
| 06/13/2002 | WO2000068982A9 Fabrication of ohmic contacts to inp using non- stoichiometric inp layers |
| 06/13/2002 | US20020072618 As organic semiconductors can be dissolved in common organic solvents and applied to the surface of a substrate using inexpensive, low-temperature solution-based processing such as spin-coating, dip-coating, drop-casting, etc. |
| 06/13/2002 | US20020072253 Method of removing an amorphous oxide from a monocrystalline surface |
| 06/13/2002 | US20020072252 Process for production of thin film semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film |
| 06/13/2002 | US20020072247 Oxidizing silicon carbide in nitrous oxide using a temperature profile of about 1200 degrees C |
| 06/13/2002 | US20020072233 Semiconductor device and method of manufacturing the same |
| 06/13/2002 | US20020072212 Multilayer semiconductor supports comprising silicones, epoxy resins, acrylic polymers, polyurethane, polyesters, polybutadiene and/or blends having fillers particles such as alumina |
| 06/13/2002 | US20020072210 Method for forming liner layer in sin spacer |
| 06/13/2002 | US20020072209 Method of forming tungsten nitride layer as metal diffusion barrier in gate structure of MOSFET device |
| 06/13/2002 | US20020072207 Semiconductor device and manufacturing method thereof |
| 06/13/2002 | US20020072206 Patterned buried insulator |
| 06/13/2002 | US20020072200 Integrated circuit having a device wafer with a diffused doped backside layer |
| 06/13/2002 | US20020072197 Method for self-aligned shallow trench isolation and method of manufacturing non-volatile memory device using the same |
| 06/13/2002 | US20020072186 High voltage MOS devices and methods of forming MOS devices |
| 06/13/2002 | US20020072184 Semiconductor device and method for manufacturing the same |
| 06/13/2002 | US20020072182 Method of forming germanium doped polycrystalline silicon gate of MOS transistor and method of forming CMOS transistor device using the same |
| 06/13/2002 | US20020072181 Fabrication of transistor having elevated source-drain and metal silicide |
| 06/13/2002 | US20020072180 Semiconductor device and process for producing the same |
| 06/13/2002 | US20020072179 Field effect transistor and method of fabrication |
| 06/13/2002 | US20020072177 Method for transistor gate dielectric layer with uniform nitrogen concentration |
| 06/13/2002 | US20020072176 Process for fabricating an MOS device having highly-localized halo regions |
| 06/13/2002 | US20020072173 Semiconductor device and fabrication process therefor |
| 06/13/2002 | US20020072170 Merged self-aligned source and ONO capacitor for split gate non-volatile memory |
| 06/13/2002 | US20020072167 Flash memory device and method of making same |
| 06/13/2002 | US20020072159 Semiconductor device and manufacturing method thereof |
| 06/13/2002 | US20020072157 Semiconductor device having a semiconductor thin film containing low concentration of unbound hydrogen atoms and method of manufacturing the same |
| 06/13/2002 | US20020072144 Integrated CMOS capacitive pressure sensor |
| 06/13/2002 | US20020071315 Nonvolatile memory having embedded word lines |
| 06/13/2002 | US20020071293 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods a of forming power transistor |
| 06/13/2002 | US20020071168 Molecular architecture for molecular electro-optical transistor and switch |
| 06/13/2002 | US20020071073 Active matrix type liquid crystal display device |
| 06/13/2002 | US20020071063 Structure of storage capacitor on common |
| 06/13/2002 | US20020071046 Solid-state image apparatus, driving method therefor, and camera system |
| 06/13/2002 | US20020070913 Transistor circuit, display panel and electronic apparatus |
| 06/13/2002 | US20020070841 Semiconductor piezoresistor |
| 06/13/2002 | US20020070791 Enhanced conductivity body biased pmos driver |
| 06/13/2002 | US20020070731 Apparatus and method for analyzing capacitance of insulator |
| 06/13/2002 | US20020070632 Pre-equilibrium chemical reaction energy converter |
| 06/13/2002 | US20020070454 SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
| 06/13/2002 | US20020070452 Formation of micro rough polysurface for low sheet resistance salicided sub-quarter micron polylines |
| 06/13/2002 | US20020070428 Semiconductor device |
| 06/13/2002 | US20020070425 RF power bipolar junction transistor having performance-enhancing emitter structure |
| 06/13/2002 | US20020070418 High voltage vertical conduction superjunction semiconductor device |
| 06/13/2002 | US20020070414 Semiconductor component and process for its fabrication |
| 06/13/2002 | US20020070413 Semiconductor device having improved short channel resistance |
| 06/13/2002 | US20020070412 Integrated semiconductor device having a lateral power element |
| 06/13/2002 | US20020070407 Non-volatile semiconductor device |
| 06/13/2002 | US20020070406 Nonvolatile memory and manufacturing method thereof |
| 06/13/2002 | US20020070405 Nonvolatile semiconductor memory device and method for fabricating the same |
| 06/13/2002 | US20020070402 Semiconductor device having capacitor element in peripheral circuit and method of manufacturing the same |
| 06/13/2002 | US20020070396 Ferroelectric memory having electromagnetic wave shield structure |
| 06/13/2002 | US20020070395 Insulating gate type semiconductor device |
| 06/13/2002 | US20020070394 Using segmented N-type channel stop to enhance the SOA (safe-operating area) of LDMOS transistors |
| 06/13/2002 | US20020070390 Superlattice fabrication for InAs/GaSb/AISb semiconductor structures |
| 06/13/2002 | US20020070389 Photodetector utilizing a HEMTstructure |
| 06/13/2002 | US20020070388 Lateral polysilicon pin diode and method for so fabricating |
| 06/13/2002 | US20020070385 Light-emitting device and method of fabricating the same |
| 06/13/2002 | US20020070381 Semiconductor device having thin film transistor for supplying current to driven element |
| 06/13/2002 | US20020070380 Semiconductor device and manufacturing method thereof |
| 06/13/2002 | US20020070379 Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby |
| 06/13/2002 | US20020070291 Method and apparatus for separating sample |
| 06/13/2002 | US20020070121 Family of discretely sized slicon nanoparticles and method for producing the same |
| 06/13/2002 | US20020069816 Exposing crystallographic planes in a face of silicon substrate; and growing hexagonal gallium nitride on crystallographic planes that are exposed |
| 06/13/2002 | DE10160960A1 Semiconducting component has fourth semiconducting region of lower impurity concentration than first region, enclosing first region, arranged between second and third regions |
| 06/13/2002 | DE10127230A1 Druckerfassungsvorrichtung The pressure sensing device |
| 06/13/2002 | DE10061199A1 Verfahren zur Herstellung von schnellen vertikalen npn-Bipolartransistoren und komplementären MOS-Transistoren auf einem Chip A process for producing fast vertical npn bipolar transistors and complementary MOS transistors on a chip |
| 06/13/2002 | DE10061191A1 Schichten in Substratscheiben Layers in substrate wafers |
| 06/13/2002 | DE10060439A1 Contact metallization used in production of semiconductors contains copper distributed in partial volume |
| 06/13/2002 | DE10060428A1 Semiconductor element used as MOSFET comprises semiconductor body with connecting zones and channel zone, and control electrode arranged next to channel zone |
| 06/13/2002 | DE10060091A1 Mikromechanischer Inertialsensor The micromechanical inertial sensor |
| 06/13/2002 | DE10059813A1 Pressure measurement, especially differential pressure measurement between two fluids, in which gluing of support and pressure sensor is used |
| 06/13/2002 | DE10059498A1 Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats Substrate having a semiconductive layer, an electronic component with said substrate, electronic circuit with at least one such electronic device printable composition and process for the preparation of a substrate |
| 06/13/2002 | DE10059357A1 Verfahren zur Erzeugung eines Tunnelkontaktes sowie Vorrichtung umfassend Mittel zur Erzeugung eines Tunnelkontaktes A method for producing a tunnel contact and apparatus comprising means for producing a tunnel contact |