Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2002
07/18/2002DE10064031A1 Verfahren zum Auslesen und Speichern eines Zustandes aus einem oder in einen ferroelektrischen Transistor einer Speicherzelle und Speichermatrix A method for reading and storing a state from or in a ferroelectric transistor of a memory cell and memory array
07/17/2002EP1223620A2 Electrostatic discharge protection structure
07/17/2002EP1223619A1 Semiconductor device
07/17/2002EP1223614A1 Method for making a monocristalline substrate and integrated circuit comprising such a substrate
07/17/2002EP1223610A1 Method to form CMOS device with self-aligned raised source/drain regions
07/17/2002EP1222738A1 Thyristor arrangement with turnoff protection
07/17/2002EP1222695A1 Integrated circuit with at least one capacitor and method for producing the same
07/17/2002EP1222694A1 Silicon-carbide semiconductor device with a schottky contact and method for producing same
07/17/2002EP1222693A1 Improved heat dissipation in an amplifier circuit by interleaved configuration of two power transistors
07/17/2002EP1222692A1 Matrix array display devices with light sensing elements
07/17/2002EP1222691A1 Light-emitting matrix array display devices with light sensing elements
07/17/2002EP1222690A1 Method of manufacturing a semiconductor memory device with anti-reflective coating
07/17/2002EP1222143A1 Method for production of a semiconductor component and a semiconductor component produced by said method
07/17/2002EP0968527B1 Method for producing a vertical mos-transistor
07/17/2002EP0770267B1 Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization
07/17/2002CN1359541A Thin film transistor and method for fabricating the same, and liquid crystal display comprising the same
07/17/2002CN1359540A Tunnel contact and method for the production thereof
07/17/2002CN1359148A Float grid memory array self-aligning method with control-grid convex part and memory array
07/17/2002CN1359139A Semiconductor device and making method
07/17/2002CN1359096A Electrooptical board and electronic equipment
07/17/2002CN1359020A LCD device
07/16/2002US6421816 Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system
07/16/2002US6421278 Method of improving an electrostatic discharge characteristic in a flash memory device
07/16/2002US6421277 Non-volatile semiconductor memory device
07/16/2002US6421269 Low-leakage MOS planar capacitors for use within DRAM storage cells
07/16/2002US6420782 Vertical ball grid array integrated circuit package
07/16/2002US6420775 Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression
07/16/2002US6420771 Trench isolated bipolar transistor structure integrated with CMOS technology
07/16/2002US6420768 Trench schottky barrier rectifier and method of making the same
07/16/2002US6420767 Capacitively coupled DTMOS on SOI
07/16/2002US6420764 Field effect transitor having dielectrically isolated sources and drains and methods for making same
07/16/2002US6420761 Asymmetrical semiconductor device for ESD protection
07/16/2002US6420760 Thin film transistor manufacturing method and thin film transistor
07/16/2002US6420759 Semiconductor device
07/16/2002US6420758 Semiconductor device having an impurity region overlapping a gate electrode
07/16/2002US6420757 Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
07/16/2002US6420756 Semiconductor device and method
07/16/2002US6420755 Semiconductor device having a field effect transistor and a method of manufacturing such a device
07/16/2002US6420754 Semiconductor integrated circuit device
07/16/2002US6420751 Semiconductor device and method of manufacturing the same
07/16/2002US6420747 MOSCAP design for improved reliability
07/16/2002US6420745 Nonvolatile ferroelectric memory and its manufacturing method
07/16/2002US6420742 Ferroelectric memory transistor with high-k gate insulator and method of fabrication
07/16/2002US6420741 Ferroelectric memory having electromagnetic wave shield structure
07/16/2002US6420740 Lead germanate ferroelectric structure with multi-layered electrode
07/16/2002US6420738 Electric charge detector
07/16/2002US6420733 Semiconductor light-emitting device and manufacturing method thereof
07/16/2002US6420729 Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics
07/16/2002US6420728 Multi-spectral quantum well infrared photodetectors
07/16/2002US6420643 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
07/16/2002US6420282 Construction of thin film transistors used as liquid crystal displays on glass substrates; vapor deposition; sputtering
07/16/2002US6420281 High-temperature heat treatment of the oxidized film to drive out contamination acquired from the doped layer beneath to improve the quality of the oxidized film such as durability against a high voltage
07/16/2002US6420280 Method and system for reducing ARC layer removal by providing a capping layer for the ARC layer
07/16/2002US6420279 Coating thin films of hafnium and zirconium oxide on silicon semiconductors, by purging a chamber of hafnium and zirconium nitrate with nitrogen, then hydrating with water vapor
07/16/2002US6420246 Optical laser annealing to remove metal catalyst element; uniform rapid thermal annealing; thin film transistor
07/16/2002US6420237 Method of manufacturing twin bit cell flash memory device
07/16/2002US6420236 Lower gate workfunction and, as a result, a lower threshold voltage; hydrogen reduction of metal gates immediately after metal deposition
07/16/2002US6420234 Short channel length transistor and method of fabricating the same
07/16/2002US6420233 Split gate field effect transistor (FET) device employing non-linear polysilicon floating gate electrode dopant profile
07/16/2002US6420232 Very high density, high speed and low power; spacer formation technique without the conventional lithographic limitation; overall channel length can be smaller and is mainly determined by the composite widths of the polycrystalline silicon spacers
07/16/2002US6420231 Processing techniques for making a dual floating gate EEPROM cell array
07/16/2002US6420229 Method for fabricating a cylindrical capacitor in which a storage electrode is formed on both the upper and side surfaces of a conductor plug
07/16/2002US6420225 Method of fabricating power rectifier device
07/16/2002US6420222 Method of producing semiconductor having two-layer polycrystalline silicon structure
07/16/2002US6420219 Thin film transistors and method of forming thin film transistors
07/16/2002US6420218 Ultra-thin-body SOI MOS transistors having recessed source and drain regions
07/16/2002US6420209 Integrated circuits and methods for their fabrication
07/16/2002US6420203 Method of producing semiconductor electret condenser microphone
07/11/2002WO2002054505A2 System and method for electrically induced breakdown of nanostructures
07/11/2002WO2002054496A1 Pulsed bistable bidirectional electronic switch
07/11/2002WO2002054495A2 Metal oxynitrides on monocrystalline substrates
07/11/2002WO2002054492A2 Circuit
07/11/2002WO2002054474A1 Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device
07/11/2002WO2002054473A1 Semiconductor device and its manufacturing method
07/11/2002WO2002054449A2 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
07/11/2002WO2002054447A2 System and method for prototyping and fabricating complex microwave circuits
07/11/2002WO2002054032A1 Forming a composite pressure diaphragm with implantations, epitaxy, and a silicon nitride layer
07/11/2002WO2002015280B1 Thick oxide layer on bottom of trench structure in silicon
07/11/2002WO2002015277A8 Dense arrays and charge storage devices, and methods for making same
07/11/2002US20020090830 Semiconductor device and method for manufacturing the same
07/11/2002US20020090829 ALD method to improve surface coverage
07/11/2002US20020090801 Single crystal TFT from continuous transition metal delivery method
07/11/2002US20020090795 Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer
07/11/2002US20020090789 Semiconductor device and method for fabricating the same
07/11/2002US20020090787 Self-aligned elevated transistor
07/11/2002US20020090782 Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layer
07/11/2002US20020090780 Vertical MOSFET
07/11/2002US20020090776 Insulating film formation method, semiconductor device, and production apparatus
07/11/2002US20020090775 Method and composite for decreasing charge leakage
07/11/2002US20020090774 Bottom gate-type thin-film transistor and method for manufacturing the same
07/11/2002US20020090773 Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
07/11/2002US20020090772 Method for manufacturing semiconductor lamination, method for manufacturing lamination, semiconductor device, and electronic equipment
07/11/2002US20020090770 Semiconductor device and method for forming the same
07/11/2002US20020090769 Liquid crystal device, liquid crystal display panel and method for manufacturing the same
07/11/2002US20020090768 Ground-plane device with back oxide topography
07/11/2002US20020090767 Method of fabricating a gate dielectric layer for a thin film transistor
07/11/2002US20020090766 Method for crystallizing silicon film and thin film transistor and fabricating method using the same
07/11/2002US20020090765 Method of manufacturing a semiconductor device
07/11/2002US20020090764 Semiconductor device and method of manufacturing the same
07/11/2002US20020090762 Memory of multilevel quantum dot structure and method for fabricating the same