Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2002
07/25/2002US20020096709 Semiconductor switching device and method
07/25/2002US20020096708 Field effect controlled semiconductor component
07/25/2002US20020096704 Nonvolatile semiconductor memory device and method of manufacturing the same
07/25/2002US20020096700 Non-volatile semiconductor memory device and method of manufacturing the same
07/25/2002US20020096699 MOS transistor and method for fabricating it, and DRAM cell configuration and method for fabricating it
07/25/2002US20020096698 Unipolar spin diode and transistor and the applications of the same
07/25/2002US20020096697 Junction-isolated lateral mosfet for high-/low-side switches
07/25/2002US20020096695 Low dielectric constant sidewall spacer using notch gate process
07/25/2002US20020096693 Sti pull-down to control SiGe facet growth
07/25/2002US20020096692 Insulating nitirde layer and process for its forming, and semiconductor device and process for its production
07/25/2002US20020096691 High-voltage transistor with buried conduction layer
07/25/2002US20020096690 Manufacture of semiconductor capacitively-coupled NDR device for applications such as high-density high-speed memories and power switches
07/25/2002US20020096689 Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches
07/25/2002US20020096682 Semiconductor device and process for producing the same
07/25/2002US20020096681 Semiconductor device and method of manufacturing the semiconductor device
07/25/2002US20020096680 Process for producing thin film semiconductor device and laser irradiation apparatus
07/25/2002US20020096676 Thin film transistor made with photoconductive material
07/25/2002US20020096104 Single crystal SiCand method of producing the same as well as SiC semiconductor device and SiC composite material
07/25/2002DE10201710A1 Semiconductor sensor for physical quantity e.g. for motor vehicle has external sections of semiconductor chip connected to ground conductor or supply voltage conductor
07/25/2002DE10153739A1 Halbleiterbauelement Semiconductor device
07/25/2002DE10124986A1 Flüssig Kristallanzeige-Vorrichtung (LCD) und Verfahren zum Herstellen derselben Liquid crystal display device (LCD) and method for manufacturing the same
07/25/2002DE10101677A1 Silicon MOS transistor has a cell structure consisting of a lattice-like gate electrode enclosing cells which have n- and p-conducting layers
07/25/2002DE10101081A1 Schottky-Diode Schottky diode
07/25/2002DE10100884A1 Vorrichtung zur Sensierung eines Magnetfeldes, Magnetfeldmesser und Strommesser Apparatus for sensing a magnetic field, magnetic field meter and ammeter
07/25/2002DE10100344A1 Integrierte Schaltung und Verfahren zum Herstellen einer integrierten Schaltung Integrated circuit and method for fabricating an integrated circuit
07/25/2002DE10061528C1 Mittels Feldeffekt steuerbares Halbleiterbauelement Using field-effect-controllable semiconductor component
07/25/2002CA2435108A1 Solid state imager arrangements
07/24/2002EP1225639A1 Silicon Schottky barrier diode
07/24/2002EP1225638A2 Thin-film crystal wafer having pn junction and method for fabricating the wafer
07/24/2002EP1225636A2 Structure and method of MOS transistor having increased substrate resistance
07/24/2002EP1225635A2 Stacked multichip integrated semiconductor device including feed-through connections
07/24/2002EP1225634A2 Press-contact type semiconductor device
07/24/2002EP1225626A2 Semiconductor integrated circuit device and manufacture method therefor
07/24/2002EP1225624A2 A method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
07/24/2002EP1225623A2 A method to form a recessed source drain on a trench side wall with a replacement gate technique
07/24/2002EP1225622A2 Semiconductor device and method of fabricating the same
07/24/2002EP1225257A2 Single crystal SiC and method of producing the same as well as SiC semiconductor device and SiC composite material
07/24/2002EP1224700A1 Lateral rf mos device with improved breakdown voltage
07/24/2002EP1224699A1 Rapid ramping anneal method for fabricating superlattice materials
07/24/2002EP1224696A1 Solid-source doping for source/drain of flash memory
07/24/2002EP1224693A2 Indium-enhanced bipolar transistor
07/24/2002EP1171839A4 Assistance method and apparatus
07/24/2002CN1360738A Power MOSFET and method of making same
07/24/2002CN1360737A Parallel plate diode
07/24/2002CN1360735A Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating same
07/24/2002CN1360349A Device having thin film transistor
07/24/2002CN1360338A 半导体器件 Semiconductor devices
07/24/2002CN1088261C Silicon-on-insulator device with floating collector
07/24/2002CN1088260C Active matrix electro-optical device
07/24/2002CN1088256C Method of producing ohmic contact and semiconductor device provided with said ohmic contact
07/24/2002CN1088255C Method for producing semiconductor device
07/23/2002US6425048 Memory pool control circuit and memory pool control method
07/23/2002US6424588 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
07/23/2002US6424573 Floating gate field effect transistor and method of driving the same
07/23/2002US6424568 Code addressable memory cell in flash memory device
07/23/2002US6424389 Fabrication method of liquid crystal display device
07/23/2002US6424326 Semiconductor display device having a display portion and a sensor portion
07/23/2002US6424201 Diode element circuit and switch circuit using the same
07/23/2002US6424168 Reduced terminal testing system
07/23/2002US6424028 Semiconductor devices configured to tolerate connection misalignment
07/23/2002US6424020 High Density electronic circuit modules
07/23/2002US6424015 Semiconductor integrated circuit device
07/23/2002US6424014 Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength
07/23/2002US6424012 Semiconductor device having a tantalum oxide blocking film
07/23/2002US6424010 Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage
07/23/2002US6424009 Polysilicon insulator material in semiconductor-on-insulator (SOI) structure
07/23/2002US6424008 Memory device having a floating gate
07/23/2002US6424007 High-voltage transistor with buried conduction layer
07/23/2002US6424006 Semiconductor component
07/23/2002US6424005 LDMOS power device with oversized dwell
07/23/2002US6424004 Agglomeration by annealing
07/23/2002US6424003 EEPROM cell with self-aligned tunneling window
07/23/2002US6424002 Transistor, transistor array and non-volatile semiconductor memory
07/23/2002US6424001 Flash memory with ultra thin vertical body transistors
07/23/2002US6424000 Floating gate memory apparatus and method for selected programming thereof
07/23/2002US6423997 Semiconductor integrated circuit having a non-volatile semiconductor memory and a capacitor
07/23/2002US6423990 Vertical heterojunction bipolar transistor
07/23/2002US6423989 Semiconductor device and method of manufacturing the same
07/23/2002US6423987 Self-protect thyristor
07/23/2002US6423986 Field-controlled high-power semiconductor devices
07/23/2002US6423985 SCR compact structure
07/23/2002US6423983 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
07/23/2002US6423980 Multi-directional radiation coupling in quantum-well infrared photodetectors
07/23/2002US6423974 X-ray imaging apparatus using spherical semiconductor detectors
07/23/2002US6423648 Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent
07/23/2002US6423644 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
07/23/2002US6423632 Semiconductor device and a process for forming the same
07/23/2002US6423628 Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines
07/23/2002US6423619 Transistor metal gate structure that minimizes non-planarity effects and method of formation
07/23/2002US6423618 Method of manufacturing trench gate structure
07/23/2002US6423617 In-situ use of dichloroethene and NH3 in an H2O steam based oxidation system to provide a source of chlorine
07/23/2002US6423616 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
07/23/2002US6423615 Silicon wafers for CMOS and other integrated circuits
07/23/2002US6423604 Determination of thermal resistance for field effect transistor formed in SOI technology
07/23/2002US6423603 Method of forming a microwave array transistor for low-noise and high-power applications
07/23/2002US6423602 Circuit manufacturing method and apparatus, anneal control method and apparatus, information storage medium
07/23/2002US6423599 Method for fabricating a field effect transistor having dual gates in SOI (semiconductor on insulator) technology
07/23/2002US6423598 Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit
07/23/2002US6423590 High voltage transistor using P+ buried layer
07/23/2002US6423589 Methods for fabricating CMOS integrated circuits including source/drain compensating regions