| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 05/16/2002 | US20020056870 Flash EEPROM cell and method of manufacturing the same |
| 05/16/2002 | US20020056859 Field effect transistor with reduced gate delay and method of fabricating the same |
| 05/16/2002 | US20020056839 Method of crystallizing a silicon thin film and semiconductor device fabricated thereby |
| 05/16/2002 | US20020056838 Thin film transistor array, method of producing the same, and display panel using the same |
| 05/16/2002 | US20020056837 Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same |
| 05/16/2002 | US20020056699 Method for eliminating surface roughness in metal lines |
| 05/16/2002 | DE10129289A1 Halbleitervorrichtung mit einer Diode für eine Eingangschutzschaltung einer MOS-Vorrichtung und Verfahren zu deren Herstellung A semiconductor device comprising a diode for input protection circuit of a MOS device and process for their preparation |
| 05/16/2002 | DE10124413A1 Halbleiter-Vorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same |
| 05/16/2002 | DE10055081A1 Micro-component used as a sensor element comprises a glass body provided with an electrically conducting coating on its side facing a microstructure |
| 05/16/2002 | DE10054172A1 Halbleiter-Speicherzelle und Verfahren zu deren Herstellung A semiconductor memory cell and process for their preparation |
| 05/16/2002 | DE10054109A1 Verfahren zum Bilden eines Substratkontakts in einem Feldeffekttransistor, der über einer vergrabenen Isolierschicht gebildet ist A method for forming a substrate contact in a field effect transistor which is formed over a buried insulating layer |
| 05/16/2002 | DE10053428A1 Verfahren zur Herstellung eines DMOS-Transistors A process for the preparation of a DMOS transistor |
| 05/16/2002 | DE10053111A1 Production of field effect structure used in electronic devices comprises preparing substrate with gate region arranged between drain and source, and producing a germanium sacrificial layer |
| 05/16/2002 | DE10052680A1 Verfahren zum Einstellen einer Form einer auf einem Substrat gebildeten Oxidschicht A method of controlling a molding of an oxide layer formed on a substrate |
| 05/16/2002 | DE10051909A1 Edge border used for high voltage semiconductor component has the site of the bend and sealing of equipotential lines applied using a voltage in an insulating region |
| 05/16/2002 | DE10048345A1 Körper aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge Body of semiconductor material with a reduced mean free path length |
| 05/15/2002 | EP1205981A2 SiC MISFET |
| 05/15/2002 | EP1205980A1 A method for forming a field effect transistor in a semiconductor substrate |
| 05/15/2002 | EP1205979A1 Single electron tunneling transistor having multilayer structure |
| 05/15/2002 | EP1205969A2 Method of manufacturing a MOS field effect transistor with a recombination zone |
| 05/15/2002 | EP1205966A2 Method for improving the uniformity and reducing the roughness of a silicon surface before dielectric layer formation |
| 05/15/2002 | EP1204992A1 Method for producing a trench mos power transistor |
| 05/15/2002 | EP1204989A1 Nand type flash memory device |
| 05/15/2002 | EP1204853A1 Inorganic permeation layer for micro-electric device |
| 05/15/2002 | EP1116236B1 Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture |
| 05/15/2002 | EP0763259B1 Punch-through field effect transistor |
| 05/15/2002 | EP0698223B1 Reflective liquid crystal display device and method of making such a device |
| 05/15/2002 | CN1349664A Pre-equilibrium chemical reation energy converter |
| 05/15/2002 | CN1349663A 半导体装置 Semiconductor device |
| 05/15/2002 | CN1349662A Semiconductor device and semiconductor substrate |
| 05/15/2002 | CN1349661A Semicondcutor device having bipolar transistors |
| 05/15/2002 | CN1349253A Method for mfg. semiconductor device, and said seconductor device |
| 05/15/2002 | CN1349249A Method for making semiconductor side wall fin |
| 05/15/2002 | CN1349247A Method for forming metallic grid |
| 05/15/2002 | CN1084932C 半导体器件 Semiconductor devices |
| 05/15/2002 | CN1084931C Method of programming flash memory cell |
| 05/14/2002 | US6389583 Semiconductor device and method for pattern layout for the same using total size of transistors |
| 05/14/2002 | US6388936 Static memory cell having independent data holding voltage |
| 05/14/2002 | US6388922 Semiconductor memory and method of operating semiconductor memory |
| 05/14/2002 | US6388921 Nonvolatile semiconductor memory device with improved reliability and operation speed |
| 05/14/2002 | US6388916 Magnetoelectronic memory element with isolation element |
| 05/14/2002 | US6388851 Electronic discharge protection of integrated circuits |
| 05/14/2002 | US6388812 Apparatus and method for laser radiation |
| 05/14/2002 | US6388726 Method of manufacturing liquid crystal display device |
| 05/14/2002 | US6388725 Liquid crystal display device including counter electrodes formed on the drain lines with insulating layer therebetween |
| 05/14/2002 | US6388723 Magneto optical recording medium with metal shield layer configured to block light |
| 05/14/2002 | US6388528 MMIC folded power amplifier |
| 05/14/2002 | US6388386 Process of crystallizing semiconductor thin film and laser irradiation |
| 05/14/2002 | US6388327 Capping layer for improved silicide formation in narrow semiconductor structures |
| 05/14/2002 | US6388308 Semiconductor device and method for driving the same |
| 05/14/2002 | US6388307 Bipolar transistor |
| 05/14/2002 | US6388306 Semiconductor device with rapid reverse recovery characteristic |
| 05/14/2002 | US6388304 Semiconductor device having buried-type element isolation structure and method of manufacturing the same |
| 05/14/2002 | US6388300 Semiconductor physical quantity sensor and method of manufacturing the same |
| 05/14/2002 | US6388299 Sensor assembly and method |
| 05/14/2002 | US6388298 Detached drain MOSFET |
| 05/14/2002 | US6388293 Nonvolatile memory cell, operating method of the same and nonvolatile memory array |
| 05/14/2002 | US6388292 Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering |
| 05/14/2002 | US6388287 Switch mode power supply with reduced switching losses |
| 05/14/2002 | US6388286 Power semiconductor devices having trench-based gate electrodes and field plates |
| 05/14/2002 | US6388284 Capacitor structures |
| 05/14/2002 | US6388280 Semiconductor device |
| 05/14/2002 | US6388278 Solid state image pickup device and its driving method |
| 05/14/2002 | US6388276 Reverse conducting thyristor |
| 05/14/2002 | US6388272 A sic semiconductor device in which the third conductive layer comprises one of an os layer and a tac/wc/w layer. |
| 05/14/2002 | US6388271 Semiconductor component |
| 05/14/2002 | US6388270 Semiconductors with germanium silicides layers |
| 05/14/2002 | US6387828 High-pressure anneal process for integrated circuits |
| 05/14/2002 | US6387803 Method for forming a silicide region on a silicon body |
| 05/14/2002 | US6387786 Method of salicide formation by siliciding a gate area prior to siliciding a source and drain area |
| 05/14/2002 | US6387783 Methods of T-gate fabrication using a hybrid resist |
| 05/14/2002 | US6387779 Method of crystallizing a silicon film and thin film transistor and fabricating method thereof using the same |
| 05/14/2002 | US6387772 Method for forming trench capacitors in SOI substrates |
| 05/14/2002 | US6387769 Method of producing a schottky varicap |
| 05/14/2002 | US6387766 Method for manufacturing an integrated circuit with low threshold voltage differences of the transistors therein |
| 05/14/2002 | US6387765 Method for forming an extended metal gate using a damascene process |
| 05/14/2002 | US6387763 Field-effect transistor and corresponding manufacturing method |
| 05/14/2002 | US6387762 Method of manufacturing ferroelectric memory device |
| 05/14/2002 | US6387761 Exposure to nitrogen, hydrogen while heating; forming dielectric; forming barrier electrode, intakes, drains |
| 05/14/2002 | US6387760 Method for making semiconductor device having bent gate electrode |
| 05/14/2002 | US6387759 Method of fabricating a semiconductor device |
| 05/14/2002 | US6387758 Method of making vertical field effect transistor having channel length determined by the thickness of a layer of dummy material |
| 05/14/2002 | US6387756 Manufacturing method of non-volatile semiconductor device |
| 05/14/2002 | US6387745 Method of making a semiconductor device having a polydiode element |
| 05/14/2002 | US6387744 Process for manufacturing semiconductor integrated circuit device |
| 05/14/2002 | US6387743 Semiconductor device manufacturing method and semiconductor device |
| 05/14/2002 | US6387742 Thermal conductivity enhanced semiconductor structures and fabrication processes |
| 05/14/2002 | US6387739 Method and improved SOI body contact structure for transistors |
| 05/14/2002 | US6387738 Leaving the photoresist layer on the gate electrode after patterning it, then heating to reflow the photoresist to cover the side edges of the gate electrode; three-layer thin film is used as source, drain and pixel electrodes |
| 05/14/2002 | US6387737 Semiconductor device and manufacturing method thereof |
| 05/14/2002 | US6387735 Method for manufacturing field effect transistor capable of successfully controlling transistor characteristics relating to the short-channel effect |
| 05/14/2002 | US6387730 Hybrid S.C. devices and method of manufacture thereof |
| 05/14/2002 | US6387728 Method for fabricating a stacked chip package |
| 05/14/2002 | US6387727 Overcoating with aromatic diimide compound |
| 05/14/2002 | US6387725 Production method for integrated angular speed sensor device |
| 05/14/2002 | US6387712 Process for preparing ferroelectric thin films |
| 05/10/2002 | WO2002037575A1 Semiconductor memory cell and method for producing the same |
| 05/10/2002 | WO2002037574A1 Method of patterning thin film and tft array substrate using it and production method therefor |
| 05/10/2002 | WO2002037573A1 Semiconductor device and its manufacturing method |
| 05/10/2002 | WO2002037572A1 Point contact array, not circuit, and electronic circuit comprising the same |