Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2002
06/27/2002US20020081858 Process for manufacturing a semiconductor device
06/27/2002US20020081847 Etchant is hydrogen peroxide (H2O2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt; for liquid crystal display devices having copper lines
06/27/2002US20020081833 Patterning three dimensional structures
06/27/2002US20020081826 Annealing of high-K dielectric materials
06/27/2002US20020081820 Lead zirconate titanate dielectric situated between elec-trodes; hardmasking with refractory nitride; removing portion of hardmask and ferroelectric material using chlorine, oxygen and fluorine bearing compounds
06/27/2002US20020081818 Semiconductor device and method of manufacturing the same
06/27/2002US20020081812 Method of manufacturing semiconductor device
06/27/2002US20020081808 Structure and method for improved signal processing
06/27/2002US20020081806 NAND-type flash memory devices and methods of fabricating the same
06/27/2002US20020081805 Method and structure for an improved floating gate memory cell
06/27/2002US20020081800 Electrode, semiconductor device and methods for making them
06/27/2002US20020081796 Method for fabricating a non-volatile memory device
06/27/2002US20020081795 Method for manufacturing trench-gate type power semiconductor device
06/27/2002US20020081794 Enhanced deposition control in fabricating devices in a semiconductor wafer
06/27/2002US20020081793 Method for fabricating a semiconductor device
06/27/2002US20020081792 Method for constructing a metal oxide semiconductor field effect transistor
06/27/2002US20020081791 Double gate MOSFET transistor and method for the production thereof
06/27/2002US20020081786 Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
06/27/2002US20020081785 Process for producing an MOS field effect transistor with a recombination zone
06/27/2002US20020081784 Semiconductor device
06/27/2002US20020081766 Semiconductor device, production method thereof, and electronic device
06/27/2002US20020080668 Current controlled multi-state parallel test for semiconductor device
06/27/2002US20020080659 Highly integrated non-volatile memory cell array having a high program speed
06/27/2002US20020080637 Triodic rectifier switch
06/27/2002US20020080295 TFT active matrix liquid crystal display devices
06/27/2002US20020080292 Liquid crystal display with static discharge circuit
06/27/2002US20020079590 Semiconductor device and method for fabricating the same
06/27/2002US20020079558 Multi-layer film stack for extinction of substrate reflections during patterning
06/27/2002US20020079557 Porous silicon oxycarbide integrated circuit insulator
06/27/2002US20020079555 Semiconductor integrated circuit device and manufacturing method thereof
06/27/2002US20020079554 Semiconductor integrated circuit device and manufacturing method thereof
06/27/2002US20020079551 Semiconductor device and method of manufacturing the same
06/27/2002US20020079549 Semiconductor sensor chip having diaphragm and method of manufacturing the same
06/27/2002US20020079548 Polycide structure and method for forming polycide structure
06/27/2002US20020079547 Semiconductor device and method of manufacturing the same
06/27/2002US20020079546 Transistor circuit with varying resistance lightly doped diffused regions for electrostatic discharge ("ESD") protection
06/27/2002US20020079544 Semiconductor device and method of manufacturing the same
06/27/2002US20020079535 Low impedance VDMOS semiconductor component
06/27/2002US20020079534 Power semiconductor switching devices with low power loss and method for fabricating the same
06/27/2002US20020079533 Semiconductor memory device and its manufacture
06/27/2002US20020079530 Electronic circuit with electrical hole isolator
06/27/2002US20020079525 Semiconductor device and method of fabricating the same
06/27/2002US20020079521 Surface breakdown reduction by internal field rings and multiple poly field plates in power LDMOSFET
06/27/2002US20020079514 Metal-oxide-semiconductor transistor structure and method of manufacturing same
06/27/2002US20020079511 HBT with nitrogen-containing current blocking base collector interface and method for current blocking
06/27/2002US20020079510 Method of manufacturing bipolar device and structure thereof
06/27/2002US20020079509 Novel lateral double diffused metal oxide semiconductor device
06/27/2002US20020079508 GaN-based high electron mobility transistor
06/27/2002US20020079507 SiGe MODFET with a metal-oxide film and method for fabricating the same
06/27/2002US20020079504 Image sensor and method for fabricating the same
06/27/2002US20020079501 Active matrix substrate, method of making the substrate, and display device
06/27/2002US20020079496 Thin film transistors
06/27/2002US20020079495 Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus
06/27/2002US20020079492 Semiconductor device and method of manufacturing the same
06/27/2002US20020079491 Solid state image sensors and microlens arrays
06/27/2002US20020079488 Thin film semiconductor integrated circuit and method for forming the same
06/27/2002US20020079485 Quantum dash device
06/27/2002US20020079484 Semiconductor display device correcting system and correcting method of semiconductor display device
06/27/2002US20020079483 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
06/27/2002US20020078880 Vacancy, dominsated, defect-free silicon
06/27/2002US20020078755 Pressure sensor having semiconductor sensor chip
06/27/2002DE10161921A1 Halbleitersensor zum Erfassen einer dynamischen Grösse und Verfahren zum Herstellen desselben The same semiconductor sensor for detecting a dynamic amount and methods for making
06/27/2002DE10160962A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
06/27/2002DE10152096A1 Halbleiter-Wafer Semiconductor wafer
06/27/2002DE10135558A1 Halbleiterspeichervorrichtung und Verfahren zu deren Herstellung A semiconductor memory device and methods for their preparation
06/27/2002DE10066053A1 Halbleiterbauelement mit erhöhter Durchbruchspannung A semiconductor device with an increased breakdown voltage
06/27/2002DE10061529A1 Semiconductor component arranged in a semiconductor body used as a MOSFET comprises a source zone and a drain zone both, a body zone arranged between the source and drain zones, and a gate electrode insulated from the body via a dielectric
06/27/2002DE10061310A1 Semiconducting component with increased breakdown voltage has active structure and edge structure, compensation field strength in edge structure lower than that in active area
06/27/2002DE10061297A1 Organischer Feld-Effekt-Transistor, Verfahren zur Sturkturierung eines OFETs und integrierte Schaltung Organic field-effect transistor, method for Sturkturierung an OFET and integrated circuit
06/27/2002DE10060828A1 Semiconductor component for MOS transistor or IGBT devices has drain up configuration and edge region contact
06/27/2002CA2431162A1 Gate length control for semiconductor chip design
06/26/2002EP1217725A1 Monolithic integrated microwave voltage level shifting diode especially for microwave broadband optoelectronic transmitter
06/26/2002EP1217661A2 Transistor circuit with varying resistance lightly doped diffused regions for electrostatic discharge ("esd") protection
06/26/2002EP1217653A1 Method of fabricating an active matrix photodiode array
06/26/2002EP1217652A1 A method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface
06/26/2002EP1217626A1 Enhancement-mode NMOS transistor
06/26/2002EP1217364A2 Sensor cell
06/26/2002EP1216488A1 Thyristor with recovery time voltage surge resistance
06/26/2002EP1216397A2 Microfabricated tuning fork gyroscope and associated three-axis inertial measurement system to sense out-of-plane rotation
06/26/2002EP0978145B1 Semi-conductor device and use thereof
06/26/2002CN1355934A 半导体及其制造方法 The semiconductor manufacturing method thereof
06/26/2002CN1355931A Multilayered body, method for fabricating multilayered body and semiconductor device
06/26/2002CN1355664A Light-emitting device and its driving method
06/26/2002CN1355554A Method for manufacturing thin film transistor containing crystallization silicon active layer
06/26/2002CN1355426A Sensor for detecting free fluorine of bacterial spot on surface of single tooth
06/26/2002CN1086843C Semiconductor circuit and device
06/26/2002CN1086842C Semiconductor elemetn and data processing equipment used it
06/25/2002US6411549 Reference cell for high speed sensing in non-volatile memories
06/25/2002US6411548 Semiconductor memory having transistors connected in series
06/25/2002US6411547 Nonvolatile memory cell and method for programming and/or verifying the same
06/25/2002US6411351 Active matrix type display device comprising a discharge pattern or a short ring and method of manufacturing the same
06/25/2002US6411350 Method of manufacturing an electrode substrate resistant to wire breakage for an active matrix display device
06/25/2002US6411348 Active matrix substrate and producing method of the same
06/25/2002US6411156 Employing transistor body bias in controlling chip parameters
06/25/2002US6410984 Conductive structure in an integrated circuit
06/25/2002US6410975 Bipolar transistor with reduced base resistance
06/25/2002US6410973 Thin film SOI MOSFET
06/25/2002US6410969 Thin film transistor and method of manufacturing the same
06/25/2002US6410968 Semiconductor device with barrier layer
06/25/2002US6410967 Transistor having enhanced metal silicide and a self-aligned gate electrode