| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/20/2002 | US20020074594 Nonvolatile memory device |
| 06/20/2002 | US20020074593 Semiconductor memory device and fabrication process therefor |
| 06/20/2002 | US20020074592 Flash cell with trench source-line connection |
| 06/20/2002 | US20020074591 Non-volatile flash memory cell with application of drain induced barrier lowering phenomenon |
| 06/20/2002 | US20020074590 Non-volatile flash memory cell with asymmetric threshold voltage |
| 06/20/2002 | US20020074589 Semiconductor varactor with reduced parasitic resistance |
| 06/20/2002 | US20020074585 Self-aligned power MOSFET with enhanced base region |
| 06/20/2002 | US20020074583 Nonvolatile semiconductor memory device and manufacturing method thereof |
| 06/20/2002 | US20020074580 Thin film transistor for supplying power to element to be driven |
| 06/20/2002 | US20020074579 Semiconductor device and manufacturing method thereof |
| 06/20/2002 | US20020074578 Trench schottky barrier rectifier and method of making the same |
| 06/20/2002 | US20020074576 Semiconductor assemblies, methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates |
| 06/20/2002 | US20020074573 Semiconductor device and semiconductor integrated circuit having a conductive film on element region |
| 06/20/2002 | US20020074569 Semiconductor device and a method of manufacturing the same |
| 06/20/2002 | US20020074567 Compensation semiconductor component and method of fabricating the semiconductor component |
| 06/20/2002 | US20020074565 Aerosol silicon nanoparticles for use in semiconductor device fabrication |
| 06/20/2002 | US20020074564 Gate length control for semiconductor chip design |
| 06/20/2002 | US20020074563 Field effect transistor |
| 06/20/2002 | US20020074562 Semiconductor device and method of manufacturing a semiconductor device |
| 06/20/2002 | US20020074559 Ultraviolet light emitting diode systems and methods |
| 06/20/2002 | US20020074553 One-chip micro-integrated optoelectronic sensor |
| 06/20/2002 | US20020074550 Thin film transistor |
| 06/20/2002 | US20020074549 Method for fabricating thin film transistor array substrate for liquid crystal display |
| 06/20/2002 | US20020074548 Thin film transistor including polycrystalline active layer and method for fabricating the same |
| 06/20/2002 | US20020074547 Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device |
| 06/20/2002 | US20020074546 Semiconductor device and manufacturing method thereof |
| 06/20/2002 | US20020074543 Strain-engineered, self-assembled, semiconductor quantum dot lattices |
| 06/20/2002 | US20020073780 Semiconductor device with shielding |
| 06/20/2002 | US20020073779 Semiconductor dynamic quantity detecting sensor and manufacturing method of the same |
| 06/20/2002 | DE3448573C2 Mfg. semiconductor component with thin film transistor |
| 06/20/2002 | DE10114788C1 Semiconductor element has lateral MOSFET and vertical insulated-gate bipolar transistor with drain zones adjacent opposing major surfaces of semiconductor body |
| 06/20/2002 | CA2430888A1 Nanosensors |
| 06/20/2002 | CA2428673A1 Vertical junction field effect semiconductor diodes |
| 06/20/2002 | CA2425541A1 Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
| 06/19/2002 | EP1215734A2 Surge protective semiconductor device and method of manufacturing the same |
| 06/19/2002 | EP1215733A2 Lateral polysilicon pin diode and method for so fabricating |
| 06/19/2002 | EP1215732A2 Nonvolatile semiconductor memory device and manufacturing method thereof |
| 06/19/2002 | EP1215731A2 Offset-gate-type semiconductor device |
| 06/19/2002 | EP1215730A1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
| 06/19/2002 | EP1215681A2 Program and erase methods in twin MONOS cell memories |
| 06/19/2002 | EP1215680A2 Fast program to program verify method |
| 06/19/2002 | EP1214743A1 Method for producing memory and logic transistors |
| 06/19/2002 | EP1214740A1 Protective layer for a semiconductor device |
| 06/19/2002 | EP1214738A1 Method to fabricate a mosfet |
| 06/19/2002 | EP1214737A2 A method of producing a schottky varicap diode |
| 06/19/2002 | EP1214736A1 Method of manufacturing a transistor |
| 06/19/2002 | EP1214715A1 1 transistor cell for eeprom application |
| 06/19/2002 | EP1214190A2 Silicon carbide epitaxial layers grown on substrates offcut towards 1100 |
| 06/19/2002 | CN2496135Y Point-contact plane grid type electronic transistor |
| 06/19/2002 | CN2496134Y Sigle electron transistor |
| 06/19/2002 | CN1354830A 压力传感器 Pressure sensors |
| 06/19/2002 | CN1354568A Instrument for communication system and semiconductor integrated circuit device |
| 06/19/2002 | CN1354522A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 06/19/2002 | CN1354521A Semiconductor device and manufacturing mehtod thereof |
| 06/19/2002 | CN1354506A Production method of element with insulating layer having silicon capable of completely consuming and its structure |
| 06/19/2002 | CN1354505A Compensating metal oxide semiconductor device structure and manufacturing method thereof |
| 06/19/2002 | CN1354495A Semiconductor film and producing method and equipment, and method for producing single crystal film |
| 06/19/2002 | CN1086514C Compound semiconductor device having reduced resistance |
| 06/19/2002 | CN1086513C Method for making insulated gate field effect transistor |
| 06/19/2002 | CN1086511C III-V semiconductor structure and method of manufacture |
| 06/18/2002 | US6408425 Method of designing circuit with field effect transistor and method of determining parameters of model used in such designing method |
| 06/18/2002 | US6407901 Semiconductor device providing overvoltage and overcurrent protection for a line |
| 06/18/2002 | US6407780 Thin-film transistor substrate using aluminum to form low-resistance interconnection and liquid crystal display device using the same |
| 06/18/2002 | US6407573 Device for evaluating characteristic of insulated gate transistor |
| 06/18/2002 | US6407456 Multi-chip device utilizing a flip chip and wire bond assembly |
| 06/18/2002 | US6407444 Single event upset hardening of a semiconductor device using a buried electrode |
| 06/18/2002 | US6407436 Semiconductor device with abrupt source/drain extensions with controllable gate electrode overlap |
| 06/18/2002 | US6407435 Because the layers reduce the effects of crystalline structures within individual layers, the overall tunneling current is reduced. |
| 06/18/2002 | US6407434 Hexagonal architecture |
| 06/18/2002 | US6407431 Semiconductor device and fabrication method thereof |
| 06/18/2002 | US6407430 Electro-optical device and semiconductor circuit |
| 06/18/2002 | US6407429 Semiconductor device having silicon on insulator and fabricating method therefor |
| 06/18/2002 | US6407428 Field effect transistor with a buried and confined metal plate to control short channel effects |
| 06/18/2002 | US6407427 SOI wafer device and a method of fabricating the same |
| 06/18/2002 | US6407426 Single electron resistor memory device and method |
| 06/18/2002 | US6407425 Programmable neuron MOSFET on SOI |
| 06/18/2002 | US6407424 Flash memory with nanocrystalline silicon film floating gate |
| 06/18/2002 | US6407422 Oxygen diffusion blocking semiconductor capacitor |
| 06/18/2002 | US6407421 DRAM having a guard ring and process of fabricating the same |
| 06/18/2002 | US6407415 Solid state image sensor and method for fabricating the same |
| 06/18/2002 | US6407413 Semiconductor device with guard ring and Zener diode layer thereover |
| 06/18/2002 | US6407406 High operation speed and low power consumption; strained semiconductor layer applied with a tensile or compressive strain; low dislocation density and a sufficiently thin buffer layer |
| 06/18/2002 | US6407373 Apparatus and method for reviewing defects on an object |
| 06/18/2002 | US6407330 Solar cells incorporating light harvesting arrays |
| 06/18/2002 | US6407014 Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
| 06/18/2002 | US6407012 Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display and infrared irradiating device |
| 06/18/2002 | US6407008 Method of forming an oxide layer |
| 06/18/2002 | US6407005 Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active region |
| 06/18/2002 | US6407004 Patterning connector electrode on magnetoresistive substrate |
| 06/18/2002 | US6406986 Fabrication of a wide metal silicide on a narrow polysilicon gate structure |
| 06/18/2002 | US6406976 Semiconductor device and process for forming the same |
| 06/18/2002 | US6406973 Forming separation layer |
| 06/18/2002 | US6406972 Integrated circuit, components thereof and manufacturing method |
| 06/18/2002 | US6406969 Method of manufacturing a thin film transistor array substrate |
| 06/18/2002 | US6406966 Uniform emitter formation using selective laser recrystallization |
| 06/18/2002 | US6406965 Method of fabricating HBT devices |
| 06/18/2002 | US6406964 Method of controlling junction recesses in a semiconductor device |
| 06/18/2002 | US6406963 Patterned layer is applied defining area of gate structure, and dielectric layer is applied in such way that thickness of dielectric layer next to patterned layer is larger than height of patterned layer |
| 06/18/2002 | US6406962 Vertical trench-formed dual-gate FET device structure and method for creation |
| 06/18/2002 | US6406960 Process for fabricating an ONO structure having a silicon-rich silicon nitride layer |