| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/30/2002 | US20020063291 Method for producing a polysilicon circuit element |
| 05/30/2002 | US20020063290 Semiconductor device |
| 05/30/2002 | US20020063288 Integrated high quality diode |
| 05/30/2002 | US20020063287 Semiconductor device and method of manufacturing the same |
| 05/30/2002 | US20020063282 Buried transistor for a liquid crystal display system |
| 05/30/2002 | US20020063281 Vertical field-effect transistor with compensation zones and terminals at one side of a semiconductor body |
| 05/30/2002 | US20020063280 Vertically structured power semiconductor component |
| 05/30/2002 | US20020063279 Tunnel oxide |
| 05/30/2002 | US20020063278 Self-aligned non-volatile memory cell |
| 05/30/2002 | US20020063277 Planar structure for non-volatile memory devices |
| 05/30/2002 | US20020063276 Method of forming a floating gate memory cell structure |
| 05/30/2002 | US20020063275 Method of forming transistor gate |
| 05/30/2002 | US20020063270 High frequency switch circuit device |
| 05/30/2002 | US20020063266 Semiconductor element and manufacturing method thereof |
| 05/30/2002 | US20020063263 Metal oxide semiconductor transistor with self-aligned channel implant |
| 05/30/2002 | US20020063262 Semiconductor apparatus having a large-size bus connection |
| 05/30/2002 | US20020063261 Semiconductor device and process for fabricating the same |
| 05/30/2002 | US20020063260 Lateral DMOS transistor integratable in semiconductor power devices |
| 05/30/2002 | US20020063259 A power mosfet having laterally three-layered structure formed among element isolation regions |
| 05/30/2002 | US20020063255 Thin-film transistor and method of manufacturing thin-film transistor |
| 05/30/2002 | US20020063254 Thin-film transistor and method for making the same |
| 05/30/2002 | US20020063253 Method for manufacturing thin film transistor array panel for liquid crystal display |
| 05/30/2002 | US20020062698 Pressure sensor having semiconductor sensor chip |
| 05/29/2002 | EP1209752A1 Semiconductor device |
| 05/29/2002 | EP1209751A2 Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure |
| 05/29/2002 | EP1209750A2 Npn-heterojunction bipolar transistor including an antimonide base formed on semi-insulating indium phosphide substrate |
| 05/29/2002 | EP1209749A1 Semiconductor device and method of manufacture thereof |
| 05/29/2002 | EP1209748A1 TFT display matrix having pixel electrodes formed simultaneously with the TFT channel |
| 05/29/2002 | EP1209747A2 Semiconductor memory element |
| 05/29/2002 | EP1209746A2 A semiconductor component for transient voltage limiting |
| 05/29/2002 | EP1209745A2 Vertical MOS semiconductor device |
| 05/29/2002 | EP1209740A2 Equipment for communication system and semiconductor integrated circuit device |
| 05/29/2002 | EP1209733A1 Self-aligned damascene process for MOSFET gate and raised source/drain |
| 05/29/2002 | EP1209732A2 Method to form an elevated S/D CMOS device by contacting S/D through a contact hole in the oxide |
| 05/29/2002 | EP1209730A2 High temperature electrode and barrier structure for FRAM and DRAM applications |
| 05/29/2002 | EP1209729A1 Multilayered body, method for fabricating multilayered body, and semiconductor device |
| 05/29/2002 | EP1209726A2 Semiconductor device using a polysilicon thin film and method for fabrication thereof |
| 05/29/2002 | EP1208612A1 Method for forming a patterned semiconductor film |
| 05/29/2002 | EP1208607A1 Passivation of gan based fets |
| 05/29/2002 | EP1208604A1 Semiconductor diode and method for producing the same |
| 05/29/2002 | EP1208603A1 Transistor for an electronically driven display |
| 05/29/2002 | EP1208602A2 Insulated gate semiconductor device having field shaping regions |
| 05/29/2002 | EP1208601A1 Unipolar field-effect transistor |
| 05/29/2002 | EP1208600A2 High voltage semiconductor device having a field plate arrangement |
| 05/29/2002 | EP1208598A1 Image cell, image sensor and production method therefor |
| 05/29/2002 | EP1208590A1 Manufacture of semiconductor material and devices using that material |
| 05/29/2002 | EP1208521A1 Unitary package identification and dimensioning system employing ladar-based scanning methods |
| 05/29/2002 | EP1208404A1 Method of manufacturing an active matrix device |
| 05/29/2002 | EP1208385A1 Sensor design and process |
| 05/29/2002 | EP0996972B1 Method for targeted production on n-type conductive areas in diamond layers by ion implantation |
| 05/29/2002 | EP0756757B1 Process for fabrication a semiconductor apparatus with crystal defects |
| 05/29/2002 | EP0635890B1 Active matrix substrate and thin film transistor, and method of its manufacture |
| 05/29/2002 | DE10157402A1 Drucksensor mit einem Halbleitersensorchip Pressure sensor having a semiconductor sensor chip |
| 05/29/2002 | DE10155452A1 Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung A semiconductor device and manufacturing method of the semiconductor device |
| 05/29/2002 | DE10057612A1 Semiconductor component used as a diode, transistor or thyristor comprises a semiconductor body having zones extending in the lateral direction up to a side wall running in the vertical direction |
| 05/29/2002 | DE10057611A1 Semiconductor component used e.g. as an insulated gate bipolar transistor has a recombination zone formed in the vertical direction of a semiconductor body at a distance from the drift zone in the region of a rear side of the body |
| 05/29/2002 | DE10056885A1 Halbleiterbauelement mit einer leitfähigen Struktur und Verfahren zu seiner Herstellung A semiconductor device having a conductive structure and process for its preparation |
| 05/29/2002 | DE10056873A1 Field effect transistor for integrated circuit, has gate electrode with middle portion whose cross-sectional area exceeds predefined value obtained by multiplying gate length by gate height |
| 05/29/2002 | DE10056868A1 Halbleiterbauteil mit verringerter Leitungskapazität und verringertem Übersprechrauschen Semiconductor device with reduced line capacitance and reduced crosstalk noise |
| 05/29/2002 | CN1351760A Manufacture of dielectric film |
| 05/29/2002 | CN1351680A Semi-insulating silicon carbide without vandium dumination |
| 05/29/2002 | CN1351382A Self alignment of semiconductor memory array having floating gate memory units with control gate isolating sheets |
| 05/29/2002 | CN1351380A Programmable non-volatile memory using ultra-thin medium breakdown phenomenon |
| 05/29/2002 | CN1351371A Film transistor having polycrystal active layer and manufacture thereof |
| 05/29/2002 | CN1351370A Technology for preparing MOS FET with embedded grid |
| 05/29/2002 | CN1351325A Liquid crystal display device |
| 05/28/2002 | US6396745 Vertical two-transistor flash memory |
| 05/28/2002 | US6396741 Programming of nonvolatile memory cells |
| 05/28/2002 | US6396560 Method of producing liquid crystal display panel |
| 05/28/2002 | US6396191 Thermal diode for energy conversion |
| 05/28/2002 | US6396126 High voltage transistor using P+ buried layer |
| 05/28/2002 | US6396124 Semiconductor device |
| 05/28/2002 | US6396120 Silicon anti-fuse structures, bulk and silicon on insulator fabrication methods and application |
| 05/28/2002 | US6396118 Conductive mesh bias connection for an array of elevated active pixel sensors |
| 05/28/2002 | US6396113 Active trench isolation structure to prevent punch-through and junction leakage |
| 05/28/2002 | US6396112 Method of fabricating buried source to shrink chip size in memory array |
| 05/28/2002 | US6396110 Semiconductor device with multiple emitter contact plugs |
| 05/28/2002 | US6396108 Self-aligned double gate silicon-on-insulator (SOI) device |
| 05/28/2002 | US6396106 Thin film transistor and fabricating method thereof |
| 05/28/2002 | US6396105 Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method |
| 05/28/2002 | US6396104 Thin film transistor in metal-induced crystallized region formed around a transition metal nucleus site |
| 05/28/2002 | US6396103 Optimized single side pocket implant location for a field effect transistor |
| 05/28/2002 | US6396102 Field coupled power MOSFET bus architecture using trench technology |
| 05/28/2002 | US6396099 Non-volatile memory device and manufacturing method thereof |
| 05/28/2002 | US6396098 Semiconductor memory device and method of fabricating the same |
| 05/28/2002 | US6396095 Semiconductor memory and method of driving semiconductor memory |
| 05/28/2002 | US6396093 Ferroelectric memory with reduced capacitance of ferroelectric gate layer |
| 05/28/2002 | US6396090 Trench MOS device and termination structure |
| 05/28/2002 | US6396086 Semiconductor device and semiconductor integrated circuit having a conductive film on element region |
| 05/28/2002 | US6396085 GaN-type semiconductor vertical field effect transistor |
| 05/28/2002 | US6396084 Structure of semiconductor rectifier |
| 05/28/2002 | US6396080 Single crystals containing dopes |
| 05/28/2002 | US6396079 Thin film semiconductor device having a buffer layer |
| 05/28/2002 | US6396078 Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| 05/28/2002 | US6396077 Semiconductor device provided with conductive layer and liquid crystal display |
| 05/28/2002 | US6396046 Imager with reduced FET photoresponse and high integrity contact via |
| 05/28/2002 | US6395654 Method of forming ONO flash memory devices using rapid thermal oxidation |
| 05/28/2002 | US6395653 Semiconductor wafer with crystal lattice defects, and process for producing this wafer |
| 05/28/2002 | US6395652 Method of manufacturing thin film transistor |
| 05/28/2002 | US6395609 Method for fabricating a bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current |