Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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08/07/2002 | EP1229491A1 Integrated semiconductor circuit device, process of manufacturing the same, ic module and ic card |
08/07/2002 | EP1229380A1 Display device and method of manufacturing the same |
08/07/2002 | EP1228534A1 Semiconductor non-volatile memory device |
08/07/2002 | EP1228533A1 Method of manufacturing a bipolar transistor semiconductor device |
08/07/2002 | EP1051754B1 A field-effect transistor |
08/07/2002 | EP0972304B1 Method for obtaining a thin film, in particular semiconductor, comprising a protected ion zone and involving an ion implantation |
08/07/2002 | EP0784869B1 Emitter switched thyristor |
08/07/2002 | CN1362745A Semiconductor device and manufacture method thereof |
08/07/2002 | CN1362744A 半导体器件 Semiconductor devices |
08/07/2002 | CN1362742A Electrostatic discharge preventing method and device and integrated circuit |
08/07/2002 | CN1362736A Self-aligment method of semicondctor storage array and storage array made therefrom |
08/07/2002 | CN1362728A Semiconductor device manufacture method |
08/07/2002 | CN1362727A Reinforcing deposition control of manufacturing device in semiconductor wafer |
08/07/2002 | CN1362726A MIS semiconductor device manufacture method |
08/07/2002 | CN1088916C Semiconductor device with double junction structure |
08/07/2002 | CN1088914C Method for fabricating metal oxide semiconductor field effect transistor |
08/07/2002 | CN1088913C Semiconductor device and method of manufacturing the same |
08/07/2002 | CN1088912C Semiconductor device and method of manufacturing the same |
08/06/2002 | US6429908 Method for manufacturing a gate of thin film transistor in a liquid crystal display device |
08/06/2002 | US6429843 Electro-optical device |
08/06/2002 | US6429842 Liquid crystal display |
08/06/2002 | US6429505 SOI semiconductor controlled rectifier and diode for electrostatic discharge protection |
08/06/2002 | US6429501 Semiconductor device having high breakdown voltage and method for manufacturing the device |
08/06/2002 | US6429500 Semiconductor pin diode for high frequency applications |
08/06/2002 | US6429498 Sensor for measuring a magnetic field |
08/06/2002 | US6429490 Protection device and protection method for semiconductor device |
08/06/2002 | US6429487 Semiconductor device having gate to body connection |
08/06/2002 | US6429485 Thin film transistor and method of fabricating thereof |
08/06/2002 | US6429483 Semiconductor device and method for forming the same |
08/06/2002 | US6429482 Halo-free non-rectifying contact on chip with halo source/drain diffusion |
08/06/2002 | US6429481 Field effect transistor and method of its manufacture |
08/06/2002 | US6429480 Semiconductor device having nonvolatile memory cell and field effect transistor |
08/06/2002 | US6429479 Nand flash memory with specified gate oxide thickness |
08/06/2002 | US6429472 Split gate type flash memory |
08/06/2002 | US6429471 Compound semiconductor field effect transistor and method for the fabrication thereof |
08/06/2002 | US6429468 In0.34A10.66AsSb0.15/InP HFET utilizing InP channels |
08/06/2002 | US6429467 Group 3 nitride |
08/06/2002 | US6429457 Field-effect transistor |
08/06/2002 | US6429456 Thin-film transistor elements and methods of making same |
08/06/2002 | US6429450 Method of manufacturing a field-effect transistor substantially consisting of organic materials |
08/06/2002 | US6429430 Scintillator panel, radiation image sensor, and methods of making the same |
08/06/2002 | US6429148 Anisotropic formation process of oxide layers for vertical transistors |
08/06/2002 | US6429120 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
08/06/2002 | US6429111 Comprising a p-type aluminum gallium indium nitride semiconductor layer and an electrode layer formed on the semiconductor layer, wherein the electrode layer contains a mixture of a metal nitride and a metal hydride |
08/06/2002 | US6429109 Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate |
08/06/2002 | US6429108 Non-volatile memory device with encapsulated tungsten gate and method of making same |
08/06/2002 | US6429100 Method of manufacturing a semiconductor device |
08/06/2002 | US6429099 Implementing contacts for bodies of semiconductor-on-insulator transistors |
08/06/2002 | US6429091 Patterned buried insulator |
08/06/2002 | US6429084 MOS transistors with raised sources and drains |
08/06/2002 | US6429079 Semiconductor device and manufacturing method thereof |
08/06/2002 | US6429078 Method of manufacturing insulating-gate semiconductor device |
08/06/2002 | US6429077 Method of forming a lateral diffused metal-oxide semiconductor transistor |
08/06/2002 | US6429076 Flash EPROM memory cell having increased capacitive coupling and method of manufacture thereof |
08/06/2002 | US6429075 Method of self-aligning a floating gate to a control gate and to an isolation in an electrically erasable and programmable memory cell, and a cell made thereby |
08/06/2002 | US6429074 Semiconductor memory device and method for fabricating the same |
08/06/2002 | US6429073 Methods for manufacturing semiconductor devices having a non-volatile memory transistor |
08/06/2002 | US6429072 Method of forming a floating gate memory cell structure |
08/06/2002 | US6429066 Method for producing a polysilicon circuit element |
08/06/2002 | US6429063 NROM cell with generally decoupled primary and secondary injection |
08/06/2002 | US6429062 Integrated-circuit manufacturing using high interstitial-recombination-rate blocking layer for source/drain extension implant |
08/06/2002 | US6429061 Complimentary metal oxide semiconductor (cmos); producing higher perfomance device; forming a relaxed silicon germanium layer with isolation and well implant regions |
08/06/2002 | US6429059 Semiconductor device and method for producing it |
08/06/2002 | US6429058 Method of forming fully self-aligned TFT improved process window |
08/06/2002 | US6429057 Method for manufacturing thin film transistor array panel for liquid crystal display |
08/06/2002 | US6429056 Dynamic threshold voltage devices with low gate to substrate resistance |
08/06/2002 | US6429055 Method for making SOI MOSFETS |
08/06/2002 | US6429054 Method of fabricating semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions |
08/06/2002 | US6429053 Semiconductor device method of fabricating same, and, electrooptical device |
08/06/2002 | US6429052 Method of making high performance transistor with a reduced width gate electrode and device comprising same |
08/06/2002 | US6429045 Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage |
08/06/2002 | US6429041 Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
08/06/2002 | US6429040 Polymer having a conjugated framework with functional moieties capable of solvating ions or promoting ionic charge transport; solution processable thin film |
08/06/2002 | US6427676 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
08/06/2002 | US6427540 Pressure sensor system and method of excitation for a pressure sensor |
08/06/2002 | CA2252926C All-metal, giant magnetoresistive, solid-state component |
08/01/2002 | WO2002059984A2 Stabilization of configurable molecular mechanical devices |
08/01/2002 | WO2002059980A1 Semiconductor device manufacturing method |
08/01/2002 | WO2002059979A1 Semiconductor device |
08/01/2002 | WO2002059978A1 Power bipolar transistor |
08/01/2002 | WO2002059975A1 Charge-coupled device |
08/01/2002 | WO2002059972A1 Semiconductor device and its manufacturing method |
08/01/2002 | WO2002059970A2 Mos transistor |
08/01/2002 | WO2002059968A2 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method |
08/01/2002 | WO2002059957A1 Manufacture of trench-gate semiconductor devices |
08/01/2002 | WO2002059956A1 Method of producing electronic device material |
08/01/2002 | WO2002059939A2 Method for fabricating a semiconductor device |
08/01/2002 | WO2002059478A1 Ignition device of internal combustion engine |
08/01/2002 | WO2002045183A3 Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof |
08/01/2002 | WO2002033748A3 Method and apparatus for introducing an equivalent rc circuit in a mos device using resistive wells |
08/01/2002 | WO2002025719A3 Reduced capacitance scaled hbt using a separate base post layer |
08/01/2002 | WO2002015293A3 Organic field-effect transistor (ofet), a production method therefor, an integrated circuit constructed from the same and their uses |
08/01/2002 | US20020102848 Damascene nisi metal gate high-k transistor |
08/01/2002 | US20020102839 Method of making vertical diode structures |
08/01/2002 | US20020102824 Method of optimizing channel characteristics using laterally-crystallized ELA poly-si films |
08/01/2002 | US20020102823 Thin film semiconductor device and method for producing thereof |
08/01/2002 | US20020102822 Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films |
08/01/2002 | US20020102821 Mask pattern design to improve quality uniformity in lateral laser crystallized poly-Si films |
08/01/2002 | US20020102820 Method of treating semiconductor film and method of fabricating semiconductor device |
08/01/2002 | US20020102817 Method for preventing polycide gate spiking |