Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2002
08/07/2002EP1229491A1 Integrated semiconductor circuit device, process of manufacturing the same, ic module and ic card
08/07/2002EP1229380A1 Display device and method of manufacturing the same
08/07/2002EP1228534A1 Semiconductor non-volatile memory device
08/07/2002EP1228533A1 Method of manufacturing a bipolar transistor semiconductor device
08/07/2002EP1051754B1 A field-effect transistor
08/07/2002EP0972304B1 Method for obtaining a thin film, in particular semiconductor, comprising a protected ion zone and involving an ion implantation
08/07/2002EP0784869B1 Emitter switched thyristor
08/07/2002CN1362745A Semiconductor device and manufacture method thereof
08/07/2002CN1362744A 半导体器件 Semiconductor devices
08/07/2002CN1362742A Electrostatic discharge preventing method and device and integrated circuit
08/07/2002CN1362736A Self-aligment method of semicondctor storage array and storage array made therefrom
08/07/2002CN1362728A Semiconductor device manufacture method
08/07/2002CN1362727A Reinforcing deposition control of manufacturing device in semiconductor wafer
08/07/2002CN1362726A MIS semiconductor device manufacture method
08/07/2002CN1088916C Semiconductor device with double junction structure
08/07/2002CN1088914C Method for fabricating metal oxide semiconductor field effect transistor
08/07/2002CN1088913C Semiconductor device and method of manufacturing the same
08/07/2002CN1088912C Semiconductor device and method of manufacturing the same
08/06/2002US6429908 Method for manufacturing a gate of thin film transistor in a liquid crystal display device
08/06/2002US6429843 Electro-optical device
08/06/2002US6429842 Liquid crystal display
08/06/2002US6429505 SOI semiconductor controlled rectifier and diode for electrostatic discharge protection
08/06/2002US6429501 Semiconductor device having high breakdown voltage and method for manufacturing the device
08/06/2002US6429500 Semiconductor pin diode for high frequency applications
08/06/2002US6429498 Sensor for measuring a magnetic field
08/06/2002US6429490 Protection device and protection method for semiconductor device
08/06/2002US6429487 Semiconductor device having gate to body connection
08/06/2002US6429485 Thin film transistor and method of fabricating thereof
08/06/2002US6429483 Semiconductor device and method for forming the same
08/06/2002US6429482 Halo-free non-rectifying contact on chip with halo source/drain diffusion
08/06/2002US6429481 Field effect transistor and method of its manufacture
08/06/2002US6429480 Semiconductor device having nonvolatile memory cell and field effect transistor
08/06/2002US6429479 Nand flash memory with specified gate oxide thickness
08/06/2002US6429472 Split gate type flash memory
08/06/2002US6429471 Compound semiconductor field effect transistor and method for the fabrication thereof
08/06/2002US6429468 In0.34A10.66AsSb0.15/InP HFET utilizing InP channels
08/06/2002US6429467 Group 3 nitride
08/06/2002US6429457 Field-effect transistor
08/06/2002US6429456 Thin-film transistor elements and methods of making same
08/06/2002US6429450 Method of manufacturing a field-effect transistor substantially consisting of organic materials
08/06/2002US6429430 Scintillator panel, radiation image sensor, and methods of making the same
08/06/2002US6429148 Anisotropic formation process of oxide layers for vertical transistors
08/06/2002US6429120 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
08/06/2002US6429111 Comprising a p-type aluminum gallium indium nitride semiconductor layer and an electrode layer formed on the semiconductor layer, wherein the electrode layer contains a mixture of a metal nitride and a metal hydride
08/06/2002US6429109 Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate
08/06/2002US6429108 Non-volatile memory device with encapsulated tungsten gate and method of making same
08/06/2002US6429100 Method of manufacturing a semiconductor device
08/06/2002US6429099 Implementing contacts for bodies of semiconductor-on-insulator transistors
08/06/2002US6429091 Patterned buried insulator
08/06/2002US6429084 MOS transistors with raised sources and drains
08/06/2002US6429079 Semiconductor device and manufacturing method thereof
08/06/2002US6429078 Method of manufacturing insulating-gate semiconductor device
08/06/2002US6429077 Method of forming a lateral diffused metal-oxide semiconductor transistor
08/06/2002US6429076 Flash EPROM memory cell having increased capacitive coupling and method of manufacture thereof
08/06/2002US6429075 Method of self-aligning a floating gate to a control gate and to an isolation in an electrically erasable and programmable memory cell, and a cell made thereby
08/06/2002US6429074 Semiconductor memory device and method for fabricating the same
08/06/2002US6429073 Methods for manufacturing semiconductor devices having a non-volatile memory transistor
08/06/2002US6429072 Method of forming a floating gate memory cell structure
08/06/2002US6429066 Method for producing a polysilicon circuit element
08/06/2002US6429063 NROM cell with generally decoupled primary and secondary injection
08/06/2002US6429062 Integrated-circuit manufacturing using high interstitial-recombination-rate blocking layer for source/drain extension implant
08/06/2002US6429061 Complimentary metal oxide semiconductor (cmos); producing higher perfomance device; forming a relaxed silicon germanium layer with isolation and well implant regions
08/06/2002US6429059 Semiconductor device and method for producing it
08/06/2002US6429058 Method of forming fully self-aligned TFT improved process window
08/06/2002US6429057 Method for manufacturing thin film transistor array panel for liquid crystal display
08/06/2002US6429056 Dynamic threshold voltage devices with low gate to substrate resistance
08/06/2002US6429055 Method for making SOI MOSFETS
08/06/2002US6429054 Method of fabricating semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctions
08/06/2002US6429053 Semiconductor device method of fabricating same, and, electrooptical device
08/06/2002US6429052 Method of making high performance transistor with a reduced width gate electrode and device comprising same
08/06/2002US6429045 Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage
08/06/2002US6429041 Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
08/06/2002US6429040 Polymer having a conjugated framework with functional moieties capable of solvating ions or promoting ionic charge transport; solution processable thin film
08/06/2002US6427676 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
08/06/2002US6427540 Pressure sensor system and method of excitation for a pressure sensor
08/06/2002CA2252926C All-metal, giant magnetoresistive, solid-state component
08/01/2002WO2002059984A2 Stabilization of configurable molecular mechanical devices
08/01/2002WO2002059980A1 Semiconductor device manufacturing method
08/01/2002WO2002059979A1 Semiconductor device
08/01/2002WO2002059978A1 Power bipolar transistor
08/01/2002WO2002059975A1 Charge-coupled device
08/01/2002WO2002059972A1 Semiconductor device and its manufacturing method
08/01/2002WO2002059970A2 Mos transistor
08/01/2002WO2002059968A2 Integrated circuits protected against reverse engineering using an apparent metal contact line terminating on field oxide and method
08/01/2002WO2002059957A1 Manufacture of trench-gate semiconductor devices
08/01/2002WO2002059956A1 Method of producing electronic device material
08/01/2002WO2002059939A2 Method for fabricating a semiconductor device
08/01/2002WO2002059478A1 Ignition device of internal combustion engine
08/01/2002WO2002045183A3 Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof
08/01/2002WO2002033748A3 Method and apparatus for introducing an equivalent rc circuit in a mos device using resistive wells
08/01/2002WO2002025719A3 Reduced capacitance scaled hbt using a separate base post layer
08/01/2002WO2002015293A3 Organic field-effect transistor (ofet), a production method therefor, an integrated circuit constructed from the same and their uses
08/01/2002US20020102848 Damascene nisi metal gate high-k transistor
08/01/2002US20020102839 Method of making vertical diode structures
08/01/2002US20020102824 Method of optimizing channel characteristics using laterally-crystallized ELA poly-si films
08/01/2002US20020102823 Thin film semiconductor device and method for producing thereof
08/01/2002US20020102822 Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films
08/01/2002US20020102821 Mask pattern design to improve quality uniformity in lateral laser crystallized poly-Si films
08/01/2002US20020102820 Method of treating semiconductor film and method of fabricating semiconductor device
08/01/2002US20020102817 Method for preventing polycide gate spiking