Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2002
07/11/2002US20020090759 Semiconductor device, method of connecting a semiconductor chip, circuit board, and electronic equipment
07/11/2002US20020090758 Method and resulting device for manufacturing for double gated transistors
07/11/2002US20020090757 Semiconductor device and method of manufacturing the same
07/11/2002US20020090167 Electronic device having a barrier region including aluminum and a method of manufacture therefor
07/11/2002US20020089886 Nonvolatile memory cell and method for producing the memory cell
07/11/2002US20020089755 Apparatus and method for laser radiation
07/11/2002US20020089628 Reflection type liquid crystal display and a method for manufacturing the same
07/11/2002US20020089617 Liquid crystal display
07/11/2002US20020089616 Thin film semiconductor device and liquid crystal display unit, and fabrication methods thereof
07/11/2002US20020089483 Electrooptical device and method of fabricating the same
07/11/2002US20020089061 Semiconductor device for suppressing detachment of conductive layer and method for manufacturing the semiconductor device
07/11/2002US20020089059 Semiconductor device and method for manufacturing the same
07/11/2002US20020089054 Semiconductor device having a ball grid array and a fabrication process thereof
07/11/2002US20020089040 Semiconductor device having a ball grid array and a fabrication process thereof
07/11/2002US20020089038 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
07/11/2002US20020089033 Semiconductor device and semiconductor assembly apparatus for semiconductor device
07/11/2002US20020089031 Novel method of body contact for SOI mosfet
07/11/2002US20020089029 Method and apparatus for integrating flash eprom and sram cells on a common substrate
07/11/2002US20020089028 High voltage breakdown isolation semiconductor device and manufacturing process for making the device
07/11/2002US20020089023 Low leakage current metal oxide-nitrides and method of fabricating same
07/11/2002US20020089022 Semiconductor arrangement with transistor gate insulator
07/11/2002US20020089021 Semiconductor device with an anti-doped region
07/11/2002US20020089019 MOSFET device
07/11/2002US20020089015 Semiconductor device
07/11/2002US20020089014 Self aligned method of forming a semiconductor memory array of floating gate memory cells with floating gates having multiple sharp edges, and a memory array made thereby
07/11/2002US20020089013 Semiconductor device allowing electrical writing and erasing of information and method of manufacturing the same
07/11/2002US20020089012 Memory device, method of manufacturing the same, and integrated circuit
07/11/2002US20020089011 Eeprom cell with a single polysilicon level and a self-algned tunnel area
07/11/2002US20020089010 Semiconductor device comprising a non-volatile memory cell
07/11/2002US20020089008 Method of fabricating a stacked poly-poly and MOS capacitor using a SiGe integration scheme
07/11/2002US20020089007 Vertical mosfet
07/11/2002US20020089006 Field-effect transistor and corresponding manufacturing method
07/11/2002US20020089003 Transistor in a semiconductor device and method of manufacturing the same
07/11/2002US20020089002 Nonvolatile semiconductor memory device and process for same
07/11/2002US20020089001 Power lateral diffused mos transistor
07/11/2002US20020089000 Bipolar static induction transistor (variants)
07/11/2002US20020088996 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
07/11/2002US20020088994 Semiconductor device with a super lattice buffer
07/11/2002US20020088993 Heterojunction bipolar transistor capable of restraining the conductivity modulation of the ballast layer
07/11/2002US20020088991 Power semiconductor device containing at least one zener diode provided in chip periphery portion
07/11/2002US20020088990 Semiconductor device
07/11/2002US20020088989 MOS control diode and method for manufacturing the same
07/11/2002US20020088982 LCD with increased pixel opening sizes
07/11/2002US20020088979 Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same
07/11/2002US20020088978 Method of manufacturing an active matrix substrate
07/11/2002US20020088976 Semiconductor device and method of manufacturing the same
07/11/2002US20020088971 Semiconductor device and method of manufacturing the same
07/11/2002US20020088969 Single electron transistor using porous silicon and manufacturing method thereof
07/11/2002DE10125967C1 DRAM cell arrangement used for a semiconductor storage device comprises a matrix arrangement of storage cells stacked over each other as layers, and a capacitor connected to the MOS transistor
07/11/2002DE10065747A1 Schaltungsanordnung Circuitry
07/11/2002DE10065525A1 Semiconductor arrangement used as a diode consists of a chip with an edge region consisting of a first layer of first conductivity and a second layer of opposing conductivity made up of partial layers
07/10/2002EP1221720A2 Semiconductor device, method for manufacturing the same, and ink jet apparatus
07/10/2002EP1221655A2 Integrated circuit and method of making an integrated circuit
07/10/2002EP1221179A1 Strongly textured atomic ridges and dots
07/10/2002EP0871888B1 Automated molecular biological diagnostic system
07/10/2002EP0843891B1 Process for producing a non-volatile memory cell
07/10/2002EP0820645B1 Bipolar silicon-on-insulator transistor with increased breakdown voltage
07/10/2002EP0809863B1 Hot carrier transistors and their manufacture
07/10/2002EP0600063B2 Method of manufacturing cmos semiconductor components with local interconnects
07/10/2002CN1358326A Metal oxie thin films for high dielectric constant applications
07/10/2002CN1357926A Transverse polycrystal silicon PIN diode and its manufacture
07/10/2002CN1357925A Thin film transistor and its manufacture
07/10/2002CN1357906A Method of improving homogeneity and reducing surface roughness of silicon medium
07/10/2002CN1357786A Pixel unit and its making process
07/10/2002CN1357743A 位移传感器 Displacement sensors
07/10/2002CN1087504C High frequency static induction transistor having high output
07/10/2002CN1087503C Geometrical control of device corner threshold
07/10/2002CN1087502C Ballast monitoring for radio frequency power transistors
07/10/2002CN1087501C Method for making nonvolatile memory
07/10/2002CN1087500C Semiconductor memory and method of manufacturing the same
07/10/2002CN1087497C Semi-conductor device
07/10/2002CN1087496C 半导体装置 Semiconductor device
07/10/2002CN1087492C Semiconductor device and process of fabrication thereof
07/09/2002US6418074 Semiconductor memory device having driver circuit which supplies temporary accelerated charge
07/09/2002US6418060 Method of programming and erasing non-volatile memory cells
07/09/2002US6418058 Nonvolatile semiconductor memory device
07/09/2002US6417896 Active matrix display device
07/09/2002US6417722 Sense amplifier configuration having a field-effect transistor having a short channel length and an adjustable threshold voltage
07/09/2002US6417673 Scanning depletion microscopy for carrier profiling
07/09/2002US6417570 Layered dielectric film structure suitable for gate dielectric application in sub-0.25 μm technologies
07/09/2002US6417565 Multilayer; semiconductor overcoated with dielectrics
07/09/2002US6417560 Semiconductor device
07/09/2002US6417558 Semiconductor device having a reduced parasitic capacitance bonding pad structure
07/09/2002US6417554 Latch free IGBT with schottky gate
07/09/2002US6417551 Semiconductor device and method of manufacturing the same
07/09/2002US6417550 High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage
07/09/2002US6417549 Static random access memory device and method for manufacturing the same
07/09/2002US6417547 Semiconductor device with a halo structure
07/09/2002US6417543 MIS semiconductor device with sloped gate, source, and drain regions
07/09/2002US6417542 Field effect-controlled, vertical semiconductor component
07/09/2002US6417541 ESD protection network with field oxide device and bonding pad
07/09/2002US6417540 Non-volatile semiconductor memory device and method for manufacturing the same
07/09/2002US6417539 High density memory cell assembly and methods
07/09/2002US6417538 Nonvolative semiconductor memory device with high impurity concentration under field oxide layer
07/09/2002US6417536 Semiconductor device with memory capacitor having an electrode of Si1-x Gex
07/09/2002US6417531 Charge transfer device with final potential well close to floating diffusion region
07/09/2002US6417527 Diode, method for fabricating the diode, and coplanar waveguide
07/09/2002US6417526 Semiconductor device having a rectifying junction and method of manufacturing same
07/09/2002US6417520 Semiconductor device with quantum-wave interference layers
07/09/2002US6417519 Group 3,4 and 4 intermetallics