Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2002
07/30/2002US6426540 Optimized border of semiconductor components
07/30/2002US6426536 Double layer perovskite oxide electrodes
07/30/2002US6426535 Semiconductor device having improved short channel resistance
07/30/2002US6426532 Semiconductor device and method of manufacture thereof
07/30/2002US6426529 Semiconductor memory
07/30/2002US6426525 FET structures having symmetric and/or distributed feedforward capacitor connections
07/30/2002US6426523 Intermetallics; dry gas etching
07/30/2002US6426521 Semiconductor device
07/30/2002US6426520 Semiconductor device
07/30/2002US6426517 Active matrix display device having multiple gate electrode portions
07/30/2002US6426514 Dual non-parallel electronic field electro-optic effect device
07/30/2002US6426511 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same
07/30/2002US6426279 Epitaxial delta doping for retrograde channel profile
07/30/2002US6426276 Forming amorphous semiconductor film containing silicon on substrate with insulating surface, introducing elements that promote crystallization, crystallizing through heat treatment, introducing elements that getter catalysts, activating
07/30/2002US6426266 Manufacturing method for an inverted-structure bipolar transistor with improved high-frequency characteristics
07/30/2002US6426265 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
07/30/2002US6426264 Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device
07/30/2002US6426260 Switching speed improvement in DMO by implanting lightly doped region under gate
07/30/2002US6426259 Vertical field effect transistor with metal oxide as sidewall gate insulator
07/30/2002US6426258 Method of manufacturing a semiconductor integrated circuit device
07/30/2002US6426257 Flash memory and manufacturing method therefor
07/30/2002US6426248 Process for forming power MOSFET device in float zone, non-epitaxial silicon
07/30/2002US6426246 Method for forming thin film transistor with lateral crystallization
07/30/2002US6426244 Process of forming a thick oxide field effect transistor
07/30/2002US6426239 Method of manufacturing a semiconductor component having a fixed electrode between two flexible diaphragms
07/30/2002US6426238 Charge transfer device and solid image pickup apparatus using the same
07/30/2002US6425294 Housing, detector attached to substrate, bonding wires, fluoropolymer sealants
07/25/2002WO2002058219A2 Electron-jump chemical energy converter
07/25/2002WO2002058167A1 Spin switch and magnaetic storage elemet using it
07/25/2002WO2002058166A1 Magnetic storage element, production method and driving method therefor, and memory array
07/25/2002WO2002058161A2 Mos device having a trench gate electrode
07/25/2002WO2002058160A1 Semiconductor device
07/25/2002WO2002058159A2 Mos-gated power device with doped polysilicon body and process for forming same
07/25/2002WO2002058158A2 Field effect transistor with redued gate delay and method of fabricating the same
07/25/2002WO2002058157A2 Solid state imager arrangements
07/25/2002WO2002058149A1 Power transistor with internally combined low-pass and band-pass matching stages
07/25/2002WO2002058136A1 Nonvolatile semiconductor memory device and its manufacturing method
07/25/2002WO2002058105A2 Direct detection of low-energy charged particles using metal oxide semiconductor circuitry
07/25/2002WO2002031880A3 Trench dmos transistor with embedded trench schottky rectifier
07/25/2002US20020098716 Method of making vertical diode structures
07/25/2002US20020098715 High-pressure anneal process for integrated circuits
07/25/2002US20020098711 Electroless deposition of doped noble metals and noble metal alloys
07/25/2002US20020098710 Methods Of Forming Transistors
07/25/2002US20020098695 Method of manufaturing crystalline semiconductor material and method of manufaturing semiconductor device
07/25/2002US20020098692 Semiconductor device and method for manufacturing same
07/25/2002US20020098691 Method of manufacturing a semiconductor device and the semiconductor device manufactured by the method
07/25/2002US20020098690 Methods of forming semiconductor structures
07/25/2002US20020098688 Semiconductor device having a self-aligned contact hole
07/25/2002US20020098683 Semiconductor device manufacturing method using metal silicide reaction after ion implantation in silicon wiring
07/25/2002US20020098672 Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device
07/25/2002US20020098671 Method of forming silicon-germanium film
07/25/2002US20020098669 Gate electrode having agglomeration prevention layer on metal silicide layer, and method for forming the same
07/25/2002US20020098667 Technique to produce isolated junctions by forming an insulation layer
07/25/2002US20020098665 Method for manufacturing semiconductor circuit
07/25/2002US20020098658 Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same
07/25/2002US20020098657 Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
07/25/2002US20020098656 Method of fabricating semiconductor device
07/25/2002US20020098655 Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
07/25/2002US20020098653 Aerosol process for fabricating discontinuous floating gate microelectronic devices
07/25/2002US20020098648 Method for fabricating a nonvolatile semiconductor memory cell
07/25/2002US20020098647 Split gate field effect transistor (fet) device employing non-linear polysilicon floating gate electrode dopant profile
07/25/2002US20020098646 Method of manufacturing semiconductor device
07/25/2002US20020098643 Method of manufacturing SOI element having body contact
07/25/2002US20020098637 High voltage laterally diffused metal oxide semiconductor with improved on resistance and method of manufacture
07/25/2002US20020098635 Cmos-type semiconductor device and method of fabricating the same
07/25/2002US20020098630 Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods
07/25/2002US20020098629 Method of making a TFT array with photo-imageable insulating layer over address lines
07/25/2002US20020098628 Semiconductor device and method of manufacturing the same
07/25/2002US20020098627 Surface preparation prior to deposition
07/25/2002US20020098615 Semiconductor device and method for driving the same
07/25/2002US20020098603 Integrated circuit and method for fabricating an integrated circuit
07/25/2002US20020098599 Method of manufacturing ferroelectric memory device
07/25/2002US20020098500 Genetically engineered biopolymers for use in the generation of microarrays and semiconductor chips
07/25/2002US20020097621 Nonvolatile semiconductor memory device and method of operation thereof
07/25/2002US20020097608 Integrated semiconductor memory device
07/25/2002US20020097607 Non-volatile semiconductor memory and methods of driving, operating, and manufacturing this memory
07/25/2002US20020097364 Array substrate for LCD device and method of fabricating the same
07/25/2002US20020097351 Thin film transistor liquid crystal display
07/25/2002US20020097350 Thin film transistors suitable for use in flat panel displays
07/25/2002US20020097349 Thin film transistor array panel for liquid crystal display
07/25/2002US20020097097 High-frequency power amplifier
07/25/2002US20020096776 Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
07/25/2002US20020096768 Soft metal conductor and method of making
07/25/2002US20020096766 Package structure of integrated circuits and method for packaging the same
07/25/2002US20020096755 Semiconductor device
07/25/2002US20020096754 Stacked structure of integrated circuits
07/25/2002US20020096742 ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
07/25/2002US20020096741 Lateral semiconductor device and vertical semiconductor device
07/25/2002US20020096740 Logic apparatus and logic circuit
07/25/2002US20020096737 Semiconductor device and method for manufacturing the same
07/25/2002US20020096727 Micromechanical component and method of manufacturing a micromechanical component
07/25/2002US20020096726 Semiconductor device and manufacturing method thereof
07/25/2002US20020096721 Semiconductor device including a MIS transistor
07/25/2002US20020096719 Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
07/25/2002US20020096718 Semiconductor device
07/25/2002US20020096716 Structure and method of MOS transistor having increased substrate resistance
07/25/2002US20020096715 Semiconductor device
07/25/2002US20020096714 Low voltage dual-well trench MOS device
07/25/2002US20020096713 Semi-conductor device
07/25/2002US20020096710 Semiconductor device and method for fabricating the same