Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2002
06/06/2002WO2002045174A1 Semiconductor device
06/06/2002WO2002045173A1 A semiconductor device and a method for production thereof
06/06/2002WO2002045172A1 Method for generating a tunnel contact and device comprising means for generating a tunnel contact
06/06/2002WO2002045170A1 Flash-eeprom storage device and corresponding production method
06/06/2002WO2002045168A1 Semiconductor device
06/06/2002WO2002045167A2 Thin films for magnetic devices
06/06/2002WO2002045160A1 Flexible electronic device
06/06/2002WO2002045158A2 Memory cell with vertical floating gate transistor
06/06/2002WO2002045157A1 Simultaneous formation of charge storage and bitline to worldline isolation
06/06/2002WO2002045156A2 Cmos fabrication process utilizing special transistor orientation
06/06/2002WO2002044805A2 Method of increasing the conductivity of a transparent conductive layer
06/06/2002WO2002044804A2 Pixellated devices such as active matrix liquid crystal displays
06/06/2002WO2002044803A2 Liquid-crystal display
06/06/2002WO2002044652A1 Micromechanical inertial sensor
06/06/2002WO2002025810A3 Mmic folded power amplifier
06/06/2002WO2002025700A3 Semiconductor device and method of forming a semiconductor device
06/06/2002WO2002015276A3 Memory cell, memory cell device and method for the production thereof
06/06/2002US20020069041 Semiconductor device simulation apparatus as well as method and storage medium storing simulation program thereof
06/06/2002US20020068488 Stable electrical contact for silicon carbide devices
06/06/2002US20020068457 Method for forming silicon quantum dots and method for fabricating nonvolatile memory device using the same
06/06/2002US20020068439 Method of manufacturing flash memory
06/06/2002US20020068433 Barrier layer comprising titanium nitride over a topographical structure on a field oxide region within a semiconductor substrate. A hard mask layer comprising tungsten silicide is formed over the first barrier layer.
06/06/2002US20020068428 Semiconductor device and method of manufacturing the same
06/06/2002US20020068426 Microelectronic packages having deformed bonded leads and methods therefor
06/06/2002US20020068421 Method of fabricating a semiconductor device
06/06/2002US20020068410 Method of manufacturing low-leakage, high-performance device
06/06/2002US20020068409 Method of reducing junction capacitance
06/06/2002US20020068408 Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
06/06/2002US20020068407 MOS transistor fabrication method
06/06/2002US20020068405 Fabrication method for a semiconductor integrated circuit device
06/06/2002US20020068404 Stable high voltage semiconductor device structure
06/06/2002US20020068403 Manufacturing method of a gate-split flash memory
06/06/2002US20020068402 Nonvolatile semiconductor memory and process for fabricating the same
06/06/2002US20020068398 Forms a spacer at the sidewall of a floating gate pattern to increase the surface area of the floating gate; increase a gate coupling ratio; reduce the distance between the floating gates to prohibit a seam phenomenon
06/06/2002US20020068396 Silicon wafer with embedded optoelectronic material for monolithic OEIC
06/06/2002US20020068395 Double LDD devices for improved DRAM refresh
06/06/2002US20020068394 Semiconductor device and fabrication process therefor
06/06/2002US20020068393 Gate technology for strained surface channel and strained buried channel MOSFET devices
06/06/2002US20020068392 Method for fabricating thin film transistor including crystalline silicon active layer
06/06/2002US20020068390 Method of forming semiconductor thin film and plastic substrate
06/06/2002US20020068389 Fexible electronic device
06/06/2002US20020068388 Semiconductor device and method of manufacturing the same
06/06/2002US20020068383 Chip size package semiconductor device and method of forming the same
06/06/2002US20020068372 Thin-film semiconductor device
06/06/2002US20020067651 Charge pump for negative differential resistance transistor
06/06/2002US20020067641 Usage of word voltage assistance in twin MONOS cell during program and erase
06/06/2002US20020067639 Row decoder of a NOR-type flash memory device
06/06/2002US20020067300 D/A conversion circuit and semiconductor device
06/06/2002US20020066939 Sidewalls as semiconductor etch stop and diffusion barrier
06/06/2002US20020066936 Electronic and optoelectronic devices using fractional carriers
06/06/2002US20020066935 Mis transistor and method of fabricating the same
06/06/2002US20020066934 Eeprom with high channel hot carrier injection efficiency
06/06/2002US20020066933 Negative differential resistance field effect transistor (NDR-FET) & circuits using the same
06/06/2002US20020066931 Thin film transistor and method of manufacturing the same
06/06/2002US20020066930 Field MOS transistor and semiconductor integrated circuit including the same
06/06/2002US20020066928 Semiconductor device and manufacturing method thereof
06/06/2002US20020066926 Trench schottky rectifier
06/06/2002US20020066924 High voltage power MOSFET having low on-resistance
06/06/2002US20020066923 Non-volatile flash memory cell with short floating gate
06/06/2002US20020066916 Forming electronic structures having dual dielectric thicknesses and the structure so formed
06/06/2002US20020066914 Ferroelectric memory and manufacturing method thereof
06/06/2002US20020066911 GaInP stacked layer structure and field-effect transistor manufactured using the same
06/06/2002US20020066909 Heterojunction bipolar transistor and method of producing the same
06/06/2002US20020066908 Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same
06/06/2002US20020066906 IGBT with PN insulation and production method
06/06/2002US20020066903 Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates
06/06/2002US20020066902 6599784 withdrawn after electronic O.G. published
06/06/2002US20020066900 Thin film transistors with self-aligned transparent pixel electrode
06/06/2002US20020066899 Silicon wafer with embedded optoelectronic material for monolithic OEIC
06/06/2002US20020066720 Fabrication method of erbium-doped silicon nano-size dots
06/06/2002DE10122928A1 Kapazitiver elektrostatischer Beschleunigungssensor, kapazitiver elektrostatischer Winkelbeschleunigungssensor und elektrostatischer Auslöser Capacitive electrostatic acceleration sensor, capacitive electrostatic angular acceleration sensor and electrostatic shutter
06/06/2002DE10058948A1 Halbleiterschaltungsanordnung sowie dazugehöriges Herstellungsverfahren Semiconductor circuitry and belonging to manufacturing process
06/06/2002DE10058031A1 Verfahren zur Bildung leicht dotierter Gebiete in einem Halbleiterbauelement A method of forming lightly doped regions in a semiconductor device
06/06/2002CA2427232A1 Self-aligned non-volatile memory cell
06/06/2002CA2427222A1 Field effect transistors and materials and methods for their manufacture
06/06/2002CA2425787A1 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same
06/05/2002EP1211809A1 Protection circuit for field effect transistor
06/05/2002EP1211734A1 Vertical semiconductor device and method for producing the same
06/05/2002EP1211733A1 Semiconductor device
06/05/2002EP1211732A1 A parallel plate diode
06/05/2002EP1211731A2 A symmetric architecture for memory cells having widely spread metal bit lines
06/05/2002EP1211729A2 Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide
06/05/2002EP1211716A2 Semiconductor device and fabrication process therefor using a dummy gate
06/05/2002EP1210736A1 Double recessed transistor
06/05/2002EP1210735A1 Method for producing an edge termination, which is capable of handling high voltages, in a base material wafer prefabricated according to the principle of lateral charge compensation
06/05/2002CN1352807A Low turn-on voltage InP schuttky device and method for making the same
06/05/2002CN1352806A Improved RF power transistor
06/05/2002CN1352466A Electron and photon device with super micro structure produced by focuisng ion beam
06/04/2002US6400610 Memory device including isolated storage elements that utilize hole conduction and method therefor
06/04/2002US6400604 Nonvolatile semiconductor memory device having a data reprogram mode
06/04/2002US6400603 Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
06/04/2002US6400552 Capacitor with conductively doped Si-Ge alloy electrode
06/04/2002US6400434 Reflection type display device having display part covered with insulating layer in which carbon-based material or pigment is dispersed
06/04/2002US6400426 Reflective liquid crystal display panel and device using same
06/04/2002US6400006 Integrated component, composite element comprising an integrated component and a conductor structure, chip card, and method of producing the integrated component
06/04/2002US6400003 High voltage MOSFET with geometrical depletion layer enhancement
06/04/2002US6400002 Methods of forming field effect transistors and related field effect transistor constructions
06/04/2002US6400001 Varactor, in particular for radio-frequency transceivers
06/04/2002US6400000 Semiconductor device with a diode, and method of manufacturing such a device
06/04/2002US6399999 Semiconductor device with extra control wiring for improving breakdown voltage