Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2002
05/10/2002WO2002037571A1 Small-scale structures
05/10/2002WO2002037570A2 Semiconductor device and method of making same
05/10/2002WO2002037569A2 Trench gate mos semiconductor device
05/10/2002WO2002037561A2 Dual gate oxide process for uniform oxide thickness
05/10/2002WO2002037552A2 Doping for flash memory cell
05/10/2002WO2002037551A1 Non-volatile memory with source side boron implantation
05/10/2002WO2002037550A1 Non-volatile memory with source side boron implantation
05/10/2002WO2002037547A1 Integration of high voltage self-aligned mos components
05/10/2002WO2002037546A1 Method for producing a schottky diode in silicon carbide
05/10/2002WO2002036484A1 Micromechanical component and corresponding production method
05/10/2002WO2002009187A3 Heterojunction tunneling diodes and process for fabricating same
05/10/2002WO2002001602A3 Method of manufacturing a charge-coupled image sensor
05/10/2002WO2001059845A3 Bipolar transistor
05/10/2002WO2001048076A3 A method to fabricate thin insulating films
05/10/2002WO2001046989A3 Decoupling capacitors for thin gate oxides
05/10/2002WO2001045501A3 GROWTH OF ULTRATHIN NITRIDE ON Si(100) BY RAPID THERMAL N2 TREATMENT
05/10/2002WO2001035500A3 Field effect transistor (fet) and fet circuitry
05/09/2002US20020055274 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
05/09/2002US20020055273 Semiconductor device having single silicon oxide nitride gas insulating layer
05/09/2002US20020055270 Passivating dielectric layer with activated nitrogen atoms, then forming metal nitride film on the nitrogen passivated dielectric layer
05/09/2002US20020055245 Method of a fabricating a semiconductor having a reduced leakage current flow between the accumulation electrode and the gate electrode
05/09/2002US20020055244 Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer
05/09/2002US20020055241 Method for fabricating semiconductor device
05/09/2002US20020055233 Higher voltage drain extended MOS transistors with self-aligned channel and drain extensions
05/09/2002US20020055232 Method of operation of punch-through field effect transistor
05/09/2002US20020055229 Split gate flash memory with virtual ground array structure and method of fabricating the same
05/09/2002US20020055228 Sidewall process to improve the flash memory cell performance
05/09/2002US20020055221 Semiconductor device and method for fabricating the same
05/09/2002US20020055220 Integration of high voltage self-aligned MOS components
05/09/2002US20020055217 Semiconductor device and its manufacturing method
05/09/2002US20020055213 Method for manufacturing compound semiconductor device
05/09/2002US20020055212 Method for fabricating MOS device with halo implanted region
05/09/2002US20020055211 Bottom gate thin film transistor, method of producing the transistor, and display device
05/09/2002US20020055209 Thin film semiconductor device and production method for the same
05/09/2002US20020055207 Method for fabricating thin-film transistor
05/09/2002US20020055206 Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
05/09/2002US20020055205 Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation
05/09/2002US20020055204 Process for manufacturing a semiconductor wafer, a semiconductor wafer, process for manufacturing a semiconductor integrated circuit device, and semiconductor integrated circuit device
05/09/2002US20020055200 Process of mounting elements and optical transmission apparatus
05/09/2002US20020055022 Method for enhancing the solubility of boron and indium in silicon
05/09/2002US20020055003 Zinc oxide films containing p-type dopant and process for preparing same
05/09/2002US20020054522 Semiconductor memory device
05/09/2002US20020054509 Semiconductor memory system
05/09/2002US20020054507 Nonvolatile semiconductor memory device
05/09/2002US20020054502 Memory cell using negative differential resistance field effect transistors
05/09/2002US20020054394 Reading apparatus for reading fingerprint
05/09/2002US20020054255 Liquid crystal device having metal light shielding layer with portions at different potentials
05/09/2002US20020054037 Matrix array substrate
05/09/2002US20020053939 Network of triacs with gates referenced with respect to a common opposite face electrode
05/09/2002US20020053936 Semiconductor integrated circuit
05/09/2002US20020053744 Protection circuit device using MOSFETS and a method of manfacturing the same
05/09/2002US20020053738 Semiconductor device with improved metal interconnection and method for forming the metal interconnection
05/09/2002US20020053737 BICMOS semiconductor integrated circuit device and fabrication process thereof
05/09/2002US20020053719 Semiconductor device and process for the same
05/09/2002US20020053718 Power semiconductor device
05/09/2002US20020053717 Semiconductor apparatus
05/09/2002US20020053712 Chemical mechanical planarization of conductive material
05/09/2002US20020053711 Device structure and method for reducing silicide encroachment
05/09/2002US20020053710 Semiconductor device having a high breakdown voltage
05/09/2002US20020053709 Semiconductor device and fabrication method thereof
05/09/2002US20020053706 Semiconductor device and signal processing system having SOI MOS transistor
05/09/2002US20020053705 BICMOS semiconductor integrated circuit device and fabrication process thereof
05/09/2002US20020053703 Semiconductor device and process for manufacturing the same, and electronic device
05/09/2002US20020053702 SOI low capacitance body contact
05/09/2002US20020053700 Semiconductor transistor with multi-depth source drain
05/09/2002US20020053699 RF power device and method of manufacturing the same
05/09/2002US20020053698 High-voltage transistor with multi-layer conduction region
05/09/2002US20020053696 Semiconductor device having low on resistance high speed turn off and short switching turn off storage time
05/09/2002US20020053695 Split buried layer for high voltage LDMOS transistor
05/09/2002US20020053694 Method of forming a memory cell with self-aligned contacts
05/09/2002US20020053693 Transistor and method of making the same
05/09/2002US20020053688 Semiconductor raised source-drain structure
05/09/2002US20020053685 High side and low side guard rings for lowest parasitic performance in an H-bridge configuration
05/09/2002US20020053683 Method of manufacturing a semiconductor component and semiconductor component thereof
05/09/2002US20020053682 Field effect transistor
05/09/2002US20020053680 Layered group 111-vcompound semiconductor, method of manufacturing the same, and light emitting element
05/09/2002US20020053674 Electro-optical device and method of manufacturing the same
05/09/2002US20020053673 Liquid crystal device, projection type display device and driving circuit
05/09/2002US20020053672 Semiconductor thin film, semiconductor device and manufacturing method thereof
05/09/2002US20020053671 Semiconductor device
05/09/2002US20020053670 Method for manufacturing a semiconductor device
05/09/2002US20020053669 Semiconductor device and method of manufacturing the same
05/09/2002US20020053667 Semiconductor device and method for producing the same
05/09/2002US20020053359 Nanostructured thermoelectric materials and devices
05/09/2002US20020053320 Method for printing of transistor arrays on plastic substrates
05/09/2002US20020053316 Method of deposition of a single-crystal silicon region
05/08/2002EP1204184A2 Electronic and photonic devices having ultra-micro structures fabricated with a focused ion beam
05/08/2002EP1204151A1 Edge-emitting light-emitting semiconductor device and method of manufacture thereof
05/08/2002EP1204147A1 Semiconductor element and semiconductor memory device using the same
05/08/2002EP1204146A1 Semiconductor element and semiconductor memory device using the same
05/08/2002EP1204145A2 Semiconductor element
05/08/2002EP1204135A2 Method of forming an ultrathin SiO2 layer using N2O as the oxidant
05/08/2002EP1203834A1 Method for forming multi-phase lead germanate film
05/08/2002EP1203749A1 Nanometer-order mechanical vibrator, production method thereof and measuring device using it
05/08/2002EP1203411A1 High power rectifier
05/08/2002EP1203410A1 Product with semiconductor comprising a schottky contact
05/08/2002EP1203409A1 Arrangement with p-doped and n-doped semiconductor layers and method for producing the same
05/08/2002EP1203408A1 Bi-directional semiconductor component
05/08/2002EP1016216A4 Quantum computer
05/08/2002EP0464196B1 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate