Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2002
08/13/2002US6432738 Single-layer-electrode type two-phase charge coupled device having smooth charge transfer
08/13/2002US6432558 Semiconductor ceramic and semiconductor ceramic device
08/13/2002US6432521 Forming at low temperature
08/13/2002US6432330 Jet system for spherical shape devices
08/13/2002US6431005 Microsystem with a flexible membrane pressure sensor
08/08/2002WO2002061846A1 Semiconductor device and fabrication method therefor
08/08/2002WO2002061845A1 Semiconductor device and method of manufacturing the same
08/08/2002WO2002061844A1 Correlated charge transfer device and a method of fabricating a correlated charge transfer device
08/08/2002WO2002061843A1 Bipolar transistor and method for producing the same
08/08/2002WO2002061842A1 Semiconductor crystal film and method for preparation thereof
08/08/2002WO2002061841A2 Partially silicide diode and method of manufacture
08/08/2002WO2002061837A2 Modular display device and organic thin-film transistor
08/08/2002WO2002061836A1 High voltage semiconductor device
08/08/2002WO2002061821A2 Method of preparing indium phosphide heterojunction bipolar transistors
08/08/2002WO2002061820A1 Silicon germanium bipolar transistor
08/08/2002WO2002061816A1 Method for forming thin semiconductor film, method for fabricating semiconductor device, system for executing these methods and electrooptic device
08/08/2002WO2002023624A3 Field effect transistor and method of fabrication
08/08/2002WO2002001603A3 Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same
08/08/2002WO2001069682A3 Vertical high-voltage semiconductor component
08/08/2002US20020107906 Communicating between stations
08/08/2002US20020107675 Wiring failure analysis method using simulation of electromigration
08/08/2002US20020106893 Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage
08/08/2002US20020106892 Method for manufacturing semiconductor device
08/08/2002US20020106880 Method for avoiding the junction leakage
08/08/2002US20020106875 Method for manufacturing and structure for transistors with reduced gate to contact spacing
08/08/2002US20020106866 Self-aligned source pocket for flash memory cells
08/08/2002US20020106861 Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device
08/08/2002US20020106860 Semiconductor device and method of manufacturing the same
08/08/2002US20020106859 Method of fabricating nonvolatile semiconductor memory device
08/08/2002US20020106852 Lowered channel doping with source side boron implant for deep sub 0.18 micron flash memory cell
08/08/2002US20020106849 Method of forming non-volatile resistance variable devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and non-volatile resistance variable devices
08/08/2002US20020106844 Method for manufacturing semiconductor device
08/08/2002US20020106841 Method of manufacturing semiconductor device
08/08/2002US20020106839 Thin film transistor and method for manufacturing the same
08/08/2002US20020106825 Method for manufacturing a liquid crystal display
08/08/2002US20020106586 Method for manufacturing a polysilicon type thin film transistor
08/08/2002US20020106536 Dielectric layer for semiconductor device and method of manufacturing the same
08/08/2002US20020105897 Chemical monolayer and micro-electronic junctions and devices containing same
08/08/2002US20020105612 Liquid crystal display device
08/08/2002US20020105611 Liquid crystal display device
08/08/2002US20020105600 Electrophoretic device, electronic sheet including the same, electronic book including the electronic sheet, and manufacturing method thereof
08/08/2002US20020105590 Image pickup apparatus
08/08/2002US20020105368 Semiconductor device
08/08/2002US20020105263 Liquid crystal display and method for manufacturing the same
08/08/2002US20020105098 Semiconductor device and manufacturing method of the same
08/08/2002US20020105080 Method of forming an electronic device
08/08/2002US20020105079 Semiconductor device
08/08/2002US20020105066 Semiconductor device with lightly doped drain layer
08/08/2002US20020105056 Arrangement of stacked, spherically-shaped semiconductors
08/08/2002US20020105054 High voltage transistor using P+ buried layer
08/08/2002US20020105053 Integrated circuit with bipolar transistors having different emitter base junction widths
08/08/2002US20020105050 One time programmable semiconductor nonvolatile memory device and method for production of same
08/08/2002US20020105046 Integrated semiconductor circuit device, process of manufacturing the same, IC module and IC card
08/08/2002US20020105044 Distributed reverse surge guard
08/08/2002US20020105040 Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same
08/08/2002US20020105039 Damascene double-gate mosfet structure and its fabrication method
08/08/2002US20020105037 Semiconductor memory capable of being driven at low voltage and its manufacture method
08/08/2002US20020105036 Source side programming
08/08/2002US20020105034 Semiconductor device having dynamic threshold transistors and element isolation region and fabrication method thereof
08/08/2002US20020105033 Thin film transistor having lightly and heavily doped source/drain regions and its manufacture
08/08/2002US20020105032 SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
08/08/2002US20020105031 Semiconductor device and method of manufacturing the same
08/08/2002US20020105030 Thin film transistor array substrate for liquid crystal display and method for fabricating same
08/08/2002US20020105029 Poly-silicon thin film transistor and method for fabricating thereof
08/08/2002US20020105028 Semiconductor device
08/08/2002US20020105027 Semiconductor device
08/08/2002US20020105026 Semiconductor device
08/08/2002US20020105025 Semiconductor device
08/08/2002US20020105024 Semiconductor device
08/08/2002US20020105023 Nov-volatile semiconductor memory cell utilizing poly-edge discharge
08/08/2002US20020105020 Non-volatile memory device and method of manufacturing the same
08/08/2002US20020105016 Memory cell configuration
08/08/2002US20020105015 Semiconductor device and method of producing the same
08/08/2002US20020105014 Body-tied-to-source with partial trench
08/08/2002US20020105011 Heterojunction bipolar transistor and method of making heterojunction bipolar transistor
08/08/2002US20020105009 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
08/08/2002US20020105008 Gate commutated turn-off semiconductor device
08/08/2002US20020105007 Silicon improved schottky barrier diode
08/08/2002US20020105006 Semiconductor device and driving method thereof
08/08/2002US20020104994 Method of manufacturing thin film transistor
08/08/2002US20020104993 Gate technology for strained surface channel and strained buried channel MOSFET devices
08/08/2002US20020104992 Display device and method of manufacturing the same
08/08/2002US20020104989 Non-hermetic APD
08/08/2002US20020104988 Trench gate type semiconductor device and method of manufacturing
08/08/2002US20020104378 Micromachined silicon gyro using tuned accelerometer
08/08/2002US20020104377 Dynamic sensor having capacitance varying according to dynamic force applied thereto
08/08/2002DE19540665C2 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation
08/08/2002DE10200873A1 Dynamischer Sensor mit einer sich in Übereinstimmung mit einer darauf ausgeübten dynamischen Kraft ändernden Kapazität Dynamic sensor with a capacity varying in accordance with a dynamic force exerted thereon
08/08/2002DE10108923C1 Nativer Feldeffekttransistor und Verfahren zu dessen Herstellung Native field effect transistor and method of producing the
08/07/2002EP1229592A2 Optical detector and method to produce an arrangement of a plurality of semiconductor layers
08/07/2002EP1229591A1 Semiconductor device
08/07/2002EP1229590A1 Correlated charge transfer device and a method of fabricating a correlated charge transfer device
08/07/2002EP1229589A2 High voltage semiconductor device
08/07/2002EP1229587A1 Protection structure against parasites
08/07/2002EP1229585A1 Integrated circuit with bipolar transistors having different emitter base junction widths
08/07/2002EP1229584A2 Semiconductor device and manufacturing method of the same
08/07/2002EP1229583A1 Semiconductor device and its manufacturing method
08/07/2002EP1229581A2 Thin-film semiconductor device and method of manufacturing the same
08/07/2002EP1229576A2 Method of producing SOI MOSFET
08/07/2002EP1229552A1 One time programmable semiconductor nonvolatile memory device and method for production of same
1 ... 1698 1699 1700 1701 1702 1703 1704 1705 1706 1707 1708 1709 1710 1711 1712 1713 1714 1715 1716 1717 1718 ... 2182