Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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08/15/2002 | US20020109163 Flash memory with ultra thin vertical body transistors |
08/15/2002 | US20020109158 Dynamic memory based on single electron storage |
08/15/2002 | US20020109157 Photogate with improved short wavelength response for a CMOS imager |
08/15/2002 | US20020109153 Silicon-on-insulator diodes and ESD protection circuits |
08/15/2002 | US20020109150 Semiconductor device and manufacturing method thereof |
08/15/2002 | US20020109145 Static induction transistor |
08/15/2002 | US20020109144 Method of manufacturing a semiconductor device |
08/15/2002 | US20020109143 Display device and manufacturing method for the same |
08/15/2002 | US20020109142 Non-volatile memory device and manufacturing method thereof |
08/15/2002 | US20020109141 Liquid crystal display device and method of forming the same |
08/15/2002 | US20020109138 Programmable memory address and decode circuits with ultra thin vertical body transistors |
08/15/2002 | US20020109135 MOS field-effect transistor comprising layered structure including Si layer and SiGe layer OR SiGeC layer as channel regions |
08/15/2002 | US20020109134 Nano-structures, process for preparing nano-structures and devices |
08/15/2002 | US20020109100 Light detection device |
08/15/2002 | US20020109074 Semiconductor device, optoelectronic board, and production methods therefor |
08/15/2002 | US20020108927 Method of fabricating ferroelectric memory transistors |
08/15/2002 | US20020108926 Method for producing micromachined devices and devices obtained thereof |
08/15/2002 | US20020108565 Apparatus and method for selectively restricting process fluid flow in semiconductor processing |
08/15/2002 | CA2435817A1 Micromachined silicon gyro using tuned accelerometer |
08/14/2002 | EP1231646A2 Semiconductor memory capable of being driven at low voltage and its manufacture method |
08/14/2002 | EP1231645A2 Thin film SOI semiconductor device |
08/14/2002 | EP1231644A2 Power thyristor with mos gated turn-off and mos-assisted turn-on |
08/14/2002 | EP1231643A2 MOS field-effect transistor comprising Si and SiGe layers or Si and SiGeC layers as channel regions |
08/14/2002 | EP1231640A1 Semiconductor device |
08/14/2002 | EP1231631A2 MFMOS/MFMS non-volatile memory transistors and method of making same |
08/14/2002 | EP1231630A2 Method of fabricating ferroelectric memory transistors |
08/14/2002 | EP1230685A1 Type ii interband heterostructure backward diodes |
08/14/2002 | EP1230684A1 Semiconductor component and method for the production thereof |
08/14/2002 | EP1230675A1 Dmos transistor having a trench gate electrode and method of making the same |
08/14/2002 | EP1230672A1 Method for treating a surface of an sic semiconductor layer and schottky contact |
08/14/2002 | EP1230340A1 Methods and apparatus for the electronic, homogeneous assembly and fabrication of devices |
08/14/2002 | DE10206057A1 Non-volatile memory device, e.g. electrically-erasable programmable read only memory cell, comprises gate insulating films, tunnel insulating film, memory transistor gate, select transistor gate, and three doped regions |
08/14/2002 | DE10205345A1 Halbleiterbauelement Semiconductor device |
08/14/2002 | DE10205324A1 Halbleiterbauelement Semiconductor device |
08/14/2002 | DE10162947A1 Eine Halbleitervorrichtung mit Abschirmung A semiconductor device having shielding |
08/14/2002 | DE10151209A1 Halbleiterelement und Verfahren zu dessen Ansteuerung Semiconductor element and method for its control |
08/14/2002 | CN1364323A Polymerase alignes for organic TFT |
08/14/2002 | CN1364317A Semiconductor element with tungsten oxide layer and method for its production |
08/14/2002 | CN1364316A Lateral DMOS improved brookdown structure and method |
08/14/2002 | CN1364315A High cell density power rectifier |
08/14/2002 | CN1364314A Semiconductor device and method of manufacturing the same |
08/14/2002 | CN1364313A Rapid ramping anneal method for fabricating superlattice materials |
08/14/2002 | CN1364309A Semiconductor wafer and production method therefor |
08/14/2002 | CN1364243A Electrooptical device and electronic device |
08/14/2002 | CN1363958A Aluminium nitride and aluminum oxide/nitride grid laminated FET and forming method thereof |
08/14/2002 | CN1363949A Method for forming metal grids in semiconductor device |
08/14/2002 | CN1363854A Active matrix liquid crystal display device |
08/14/2002 | CN1089161C Sensor and method for inspecting physic status |
08/13/2002 | US6434053 Nonvolatile semiconductor memory device and method of operation thereof |
08/13/2002 | US6434052 Nonvolatile memory devices having alternative programming |
08/13/2002 | US6434047 Semiconductor memory system |
08/13/2002 | US6433851 Transmission type liquid crystal display having a transparent colorless organic interlayer insulating film between pixel electrodes and switching |
08/13/2002 | US6433765 Liquid crystal display |
08/13/2002 | US6433639 High frequency power amplifier module and wireless communication system |
08/13/2002 | US6433620 Silicon-on-insulator CMOS circuit |
08/13/2002 | US6433573 Method and apparatus for measuring parameters of an electronic device |
08/13/2002 | US6433396 Trench MOSFET with integrated schottky device and process for its manufacture |
08/13/2002 | US6433395 Electrostatic discharge protection for salicided devices |
08/13/2002 | US6433393 Semiconductor protective device and method for manufacturing same |
08/13/2002 | US6433391 Bonded SOI for floating body and metal gettering control |
08/13/2002 | US6433388 Semiconductor device with self-aligned areas formed using a supplemental silicon overlayer |
08/13/2002 | US6433387 Lateral bipolar transistor |
08/13/2002 | US6433386 Sense FET having a selectable sense current ratio and method of manufacturing the same |
08/13/2002 | US6433385 MOS-gated power device having segmented trench and extended doping zone and process for forming same |
08/13/2002 | US6433384 Semiconductor memory device having sources connected to source lines |
08/13/2002 | US6433383 Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device |
08/13/2002 | US6433382 Split-gate vertically oriented EEPROM device and process |
08/13/2002 | US6433371 Controlled gate length and gate profile semiconductor device |
08/13/2002 | US6433370 Method and apparatus for cylindrical semiconductor diodes |
08/13/2002 | US6433368 LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node |
08/13/2002 | US6433363 Semiconductor device and manufacturing method thereof |
08/13/2002 | US6433359 Surface modified with organic compound |
08/13/2002 | US6432848 Process for formation of cap layer for semiconductor |
08/13/2002 | US6432841 Contacting silicon substrate with gas mixture of nitrogen and nitrogen oxide; low pressure plasma vapor deposition |
08/13/2002 | US6432829 Process for making planarized silicon fin device |
08/13/2002 | US6432817 Tungsten silicide barrier for nickel silicidation of a gate electrode |
08/13/2002 | US6432804 Sputtered silicon target for fabrication of polysilicon thin film transistors |
08/13/2002 | US6432803 Semiconductor device and method of fabricating the same |
08/13/2002 | US6432801 Gate electrode in a semiconductor device and method for forming thereof |
08/13/2002 | US6432789 Method of forming a well isolation bipolar transistor |
08/13/2002 | US6432788 Method for fabricating an emitter-base junction for a gallium nitride bipolar transistor |
08/13/2002 | US6432786 Forming a nitrogen-containing gate oxide layer on a silicon substrate, depositing polysilicon layer on gate oxide layer and doping and flourine ion implantation of the polysilicon layer, heat treating so fluorine enters gate oxide layer |
08/13/2002 | US6432785 Method for fabricating ultra short channel PMOSFET with buried source/drain junctions and self-aligned silicide |
08/13/2002 | US6432784 Method of forming L-shaped nitride spacers |
08/13/2002 | US6432783 Method for doping a semiconductor device through a mask |
08/13/2002 | US6432782 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
08/13/2002 | US6432780 Method for suppressing boron penetrating gate dielectric layer by pulsed nitrogen plasma doping |
08/13/2002 | US6432779 Reduction to metal, or hydride thereof |
08/13/2002 | US6432776 Method of manufacturing semiconductor device |
08/13/2002 | US6432775 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface |
08/13/2002 | US6432773 Multilayer dielectric; anisotropic etching |
08/13/2002 | US6432763 Field effect transistor having doped gate with prevention of contamination from the gate during implantation |
08/13/2002 | US6432761 Apparatus and method for independent threshold voltage control of memory cell and select gate in a split-EEPROM |
08/13/2002 | US6432758 Recrystallization method of polysilicon film in thin film transistor |
08/13/2002 | US6432757 Method of manufacturing liquid crystal display panel by poly-crystallizing amorphous silicon film using both a laser and lamp lights |
08/13/2002 | US6432756 Semiconductor device and fabricating method thereof |
08/13/2002 | US6432755 Thin film transistor and manufacturing method therefor |
08/13/2002 | US6432754 Double SOI device with recess etch and epitaxy |
08/13/2002 | US6432740 Fabrication of molecular electronic circuit by imprinting |
08/13/2002 | US6432739 Method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating |