Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2002
08/15/2002US20020109163 Flash memory with ultra thin vertical body transistors
08/15/2002US20020109158 Dynamic memory based on single electron storage
08/15/2002US20020109157 Photogate with improved short wavelength response for a CMOS imager
08/15/2002US20020109153 Silicon-on-insulator diodes and ESD protection circuits
08/15/2002US20020109150 Semiconductor device and manufacturing method thereof
08/15/2002US20020109145 Static induction transistor
08/15/2002US20020109144 Method of manufacturing a semiconductor device
08/15/2002US20020109143 Display device and manufacturing method for the same
08/15/2002US20020109142 Non-volatile memory device and manufacturing method thereof
08/15/2002US20020109141 Liquid crystal display device and method of forming the same
08/15/2002US20020109138 Programmable memory address and decode circuits with ultra thin vertical body transistors
08/15/2002US20020109135 MOS field-effect transistor comprising layered structure including Si layer and SiGe layer OR SiGeC layer as channel regions
08/15/2002US20020109134 Nano-structures, process for preparing nano-structures and devices
08/15/2002US20020109100 Light detection device
08/15/2002US20020109074 Semiconductor device, optoelectronic board, and production methods therefor
08/15/2002US20020108927 Method of fabricating ferroelectric memory transistors
08/15/2002US20020108926 Method for producing micromachined devices and devices obtained thereof
08/15/2002US20020108565 Apparatus and method for selectively restricting process fluid flow in semiconductor processing
08/15/2002CA2435817A1 Micromachined silicon gyro using tuned accelerometer
08/14/2002EP1231646A2 Semiconductor memory capable of being driven at low voltage and its manufacture method
08/14/2002EP1231645A2 Thin film SOI semiconductor device
08/14/2002EP1231644A2 Power thyristor with mos gated turn-off and mos-assisted turn-on
08/14/2002EP1231643A2 MOS field-effect transistor comprising Si and SiGe layers or Si and SiGeC layers as channel regions
08/14/2002EP1231640A1 Semiconductor device
08/14/2002EP1231631A2 MFMOS/MFMS non-volatile memory transistors and method of making same
08/14/2002EP1231630A2 Method of fabricating ferroelectric memory transistors
08/14/2002EP1230685A1 Type ii interband heterostructure backward diodes
08/14/2002EP1230684A1 Semiconductor component and method for the production thereof
08/14/2002EP1230675A1 Dmos transistor having a trench gate electrode and method of making the same
08/14/2002EP1230672A1 Method for treating a surface of an sic semiconductor layer and schottky contact
08/14/2002EP1230340A1 Methods and apparatus for the electronic, homogeneous assembly and fabrication of devices
08/14/2002DE10206057A1 Non-volatile memory device, e.g. electrically-erasable programmable read only memory cell, comprises gate insulating films, tunnel insulating film, memory transistor gate, select transistor gate, and three doped regions
08/14/2002DE10205345A1 Halbleiterbauelement Semiconductor device
08/14/2002DE10205324A1 Halbleiterbauelement Semiconductor device
08/14/2002DE10162947A1 Eine Halbleitervorrichtung mit Abschirmung A semiconductor device having shielding
08/14/2002DE10151209A1 Halbleiterelement und Verfahren zu dessen Ansteuerung Semiconductor element and method for its control
08/14/2002CN1364323A Polymerase alignes for organic TFT
08/14/2002CN1364317A Semiconductor element with tungsten oxide layer and method for its production
08/14/2002CN1364316A Lateral DMOS improved brookdown structure and method
08/14/2002CN1364315A High cell density power rectifier
08/14/2002CN1364314A Semiconductor device and method of manufacturing the same
08/14/2002CN1364313A Rapid ramping anneal method for fabricating superlattice materials
08/14/2002CN1364309A Semiconductor wafer and production method therefor
08/14/2002CN1364243A Electrooptical device and electronic device
08/14/2002CN1363958A Aluminium nitride and aluminum oxide/nitride grid laminated FET and forming method thereof
08/14/2002CN1363949A Method for forming metal grids in semiconductor device
08/14/2002CN1363854A Active matrix liquid crystal display device
08/14/2002CN1089161C Sensor and method for inspecting physic status
08/13/2002US6434053 Nonvolatile semiconductor memory device and method of operation thereof
08/13/2002US6434052 Nonvolatile memory devices having alternative programming
08/13/2002US6434047 Semiconductor memory system
08/13/2002US6433851 Transmission type liquid crystal display having a transparent colorless organic interlayer insulating film between pixel electrodes and switching
08/13/2002US6433765 Liquid crystal display
08/13/2002US6433639 High frequency power amplifier module and wireless communication system
08/13/2002US6433620 Silicon-on-insulator CMOS circuit
08/13/2002US6433573 Method and apparatus for measuring parameters of an electronic device
08/13/2002US6433396 Trench MOSFET with integrated schottky device and process for its manufacture
08/13/2002US6433395 Electrostatic discharge protection for salicided devices
08/13/2002US6433393 Semiconductor protective device and method for manufacturing same
08/13/2002US6433391 Bonded SOI for floating body and metal gettering control
08/13/2002US6433388 Semiconductor device with self-aligned areas formed using a supplemental silicon overlayer
08/13/2002US6433387 Lateral bipolar transistor
08/13/2002US6433386 Sense FET having a selectable sense current ratio and method of manufacturing the same
08/13/2002US6433385 MOS-gated power device having segmented trench and extended doping zone and process for forming same
08/13/2002US6433384 Semiconductor memory device having sources connected to source lines
08/13/2002US6433383 Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device
08/13/2002US6433382 Split-gate vertically oriented EEPROM device and process
08/13/2002US6433371 Controlled gate length and gate profile semiconductor device
08/13/2002US6433370 Method and apparatus for cylindrical semiconductor diodes
08/13/2002US6433368 LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node
08/13/2002US6433363 Semiconductor device and manufacturing method thereof
08/13/2002US6433359 Surface modified with organic compound
08/13/2002US6432848 Process for formation of cap layer for semiconductor
08/13/2002US6432841 Contacting silicon substrate with gas mixture of nitrogen and nitrogen oxide; low pressure plasma vapor deposition
08/13/2002US6432829 Process for making planarized silicon fin device
08/13/2002US6432817 Tungsten silicide barrier for nickel silicidation of a gate electrode
08/13/2002US6432804 Sputtered silicon target for fabrication of polysilicon thin film transistors
08/13/2002US6432803 Semiconductor device and method of fabricating the same
08/13/2002US6432801 Gate electrode in a semiconductor device and method for forming thereof
08/13/2002US6432789 Method of forming a well isolation bipolar transistor
08/13/2002US6432788 Method for fabricating an emitter-base junction for a gallium nitride bipolar transistor
08/13/2002US6432786 Forming a nitrogen-containing gate oxide layer on a silicon substrate, depositing polysilicon layer on gate oxide layer and doping and flourine ion implantation of the polysilicon layer, heat treating so fluorine enters gate oxide layer
08/13/2002US6432785 Method for fabricating ultra short channel PMOSFET with buried source/drain junctions and self-aligned silicide
08/13/2002US6432784 Method of forming L-shaped nitride spacers
08/13/2002US6432783 Method for doping a semiconductor device through a mask
08/13/2002US6432782 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate
08/13/2002US6432780 Method for suppressing boron penetrating gate dielectric layer by pulsed nitrogen plasma doping
08/13/2002US6432779 Reduction to metal, or hydride thereof
08/13/2002US6432776 Method of manufacturing semiconductor device
08/13/2002US6432775 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
08/13/2002US6432773 Multilayer dielectric; anisotropic etching
08/13/2002US6432763 Field effect transistor having doped gate with prevention of contamination from the gate during implantation
08/13/2002US6432761 Apparatus and method for independent threshold voltage control of memory cell and select gate in a split-EEPROM
08/13/2002US6432758 Recrystallization method of polysilicon film in thin film transistor
08/13/2002US6432757 Method of manufacturing liquid crystal display panel by poly-crystallizing amorphous silicon film using both a laser and lamp lights
08/13/2002US6432756 Semiconductor device and fabricating method thereof
08/13/2002US6432755 Thin film transistor and manufacturing method therefor
08/13/2002US6432754 Double SOI device with recess etch and epitaxy
08/13/2002US6432740 Fabrication of molecular electronic circuit by imprinting
08/13/2002US6432739 Method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating