Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2002
08/20/2002US6436765 Method of fabricating a trenched flash memory cell
08/20/2002US6436749 Method for forming mixed high voltage (HV/LV) transistors for CMOS devices using controlled gate depletion
08/20/2002US6436748 Method for fabricating CMOS transistors having matching characteristics and apparatus formed thereby
08/20/2002US6436747 Method of fabricating semiconductor device
08/20/2002US6436746 Transistor having an improved gate structure and method of construction
08/20/2002US6436745 Amorphous silicon film using a catalytic metal element promoting crystallization of silicon to form a crystalline first silicon film;
08/20/2002US6436744 Method and structure for creating high density buried contact for use with SOI processes for high performance logic
08/20/2002US6436742 Method for fabricating a thin film transistor with silicon oxynitride film and silicon nitride channel passivation film for preventing a back channel effect
08/20/2002US6436602 Method of repairing a defective portion in an electronic device
08/20/2002US6436305 Passivating etchants for metallic particles
08/20/2002US6436196 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
08/20/2002US6435033 Process for manufacturing a microsystem with a flexible membrane for a pressure sensor
08/20/2002US6435028 Acceleration sensor
08/15/2002WO2002063697A1 Semiconductor device and its manufacturing method
08/15/2002WO2002063696A1 Semiconductor device
08/15/2002WO2002063695A1 Insulated-gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
08/15/2002WO2002063694A1 Bipolar diode with a trench gate
08/15/2002WO2002063693A1 Carbon nanotube electronic device and electron source
08/15/2002WO2002063692A1 Structure for protection against radio disturbances
08/15/2002WO2002063671A2 Method for producing a semiconductor component comprising a t-shaped contact electrode
08/15/2002WO2002063668A1 Method of forming insulating film and method of producing semiconductor device
08/15/2002WO2002063656A2 Chemical monolayer and micro-electronic junctions and devices containing same
08/15/2002WO2002063633A1 Bi-directional capable bucket brigade circuit
08/15/2002WO2002063388A1 Display and its manufacturing method
08/15/2002WO2002063242A1 Micromachined silicon gyro using tuned accelerometer
08/15/2002WO2002046363A3 Improved methods for gene expression monitoring on electronic microarrays
08/15/2002WO2002025705A9 Quantum dot devices
08/15/2002WO2002019389A3 Epitaxial template and barrier for the integration of functional thin film heterostructures on silicon
08/15/2002WO2002015254A3 Method of manufacturing a trench-gate semiconductor device and corresponding device
08/15/2002WO2001097290A3 Buried inverted gate field-effect transistor (bigfet)
08/15/2002WO2001097266A9 Method of manufacturing thin-film semiconductor device
08/15/2002US20020112218 Delay time calculating method by delay equivalent circuit
08/15/2002US20020111035 System and methods for manufacturing and using a mask
08/15/2002US20020111030 Stepped photoresist profile and opening formed using the profile
08/15/2002US20020111023 Method for removing surface contamination on semiconductor substrates
08/15/2002US20020111018 Method for forming metal silicide layer
08/15/2002US20020111001 Formation of metal oxide gate dielectric
08/15/2002US20020110992 Use of hydrocarbon addition for the elimination of micromasking during etching
08/15/2002US20020110990 Semiconductor device fabrication method
08/15/2002US20020110989 Semiconductor device, method of manufacturing same and method of designing same
08/15/2002US20020110985 Methid of making a single transistor non-volatile memory device
08/15/2002US20020110984 Method of fabricating a trenched flash memory cell
08/15/2002US20020110983 Method of fabricating a split-gate flash memory cell
08/15/2002US20020110975 Capacitors, DRAM arrays, monolithic integrated circuits, and methods of forming capacitors, DRAM arrays, and monolithic integrated circuits
08/15/2002US20020110974 Dynamic memory based on single electron storage
08/15/2002US20020110972 Implant method for forming Si3N4 spacer
08/15/2002US20020110969 Semiconductor device and method for manufacturing the same
08/15/2002US20020110966 Semiconductor device having multi-layered spacer and method of manufacturing the same
08/15/2002US20020110965 Semiconductor device and fabrication method thereof
08/15/2002US20020110964 Recrystallization method of polysilicon film in thin film transistor
08/15/2002US20020110963 Thin-film transistor substrate, liquid crystal display unit and manufacturing method of thin-film transistor substrate
08/15/2002US20020110962 System for manufacturing a thin-film transistor, method of manufacturing a thin-film transistor, method of evaluating polysilicon, and apparatus for inspecting polysilicon
08/15/2002US20020110961 Method to prevent an ITO from opening
08/15/2002US20020110954 Semiconductor device and method of fabricating same
08/15/2002US20020110944 Method for patterning a multilayered conductor/substrate structure
08/15/2002US20020110942 System and method for prototyping and fabricating complex microwave circuits
08/15/2002US20020110941 Semiconductor device and manufacturing method thereof
08/15/2002US20020110934 Rapid- temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
08/15/2002US20020110309 Monolithic integrated optical component including a modulator and a heterojunction bipolar transistor
08/15/2002US20020110039 Memory address and decode circuits with ultra thin body transistors
08/15/2002US20020110036 Static memory cell having independent data holding voltage
08/15/2002US20020110033 Programmable fuse and antifuse and method therefor
08/15/2002US20020109815 Contact structure
08/15/2002US20020109801 Fabrication method of liquid crystal display device
08/15/2002US20020109798 Pixellated devices such as active matrix liquid crystal displays
08/15/2002US20020109797 TFT LCD device having multi-layered pixel electrodes
08/15/2002US20020109796 Metal contact structure and method for thin film transistor array in liquid crystal display
08/15/2002US20020109660 Reflection type display device and electronic device
08/15/2002US20020109549 High frequency power amplifier module, and wireless communications system
08/15/2002US20020109539 Multi-level non-volatile semiconductor memory device with verify voltages having a smart temperature coefficient
08/15/2002US20020109237 Semiconductor device and method for making the same
08/15/2002US20020109229 Semiconductor device with improved metal interconnection and method for forming the metal interconnection
08/15/2002US20020109223 High-frequency integrated circuit and high-frequency circuit device using the same
08/15/2002US20020109206 Lateral PNP-type transistor based on a vertical NPN-structure and process for producing such PNP-type transistor
08/15/2002US20020109203 Power transistor with internally combined low-pass and band-pass matching stages
08/15/2002US20020109202 Diode structure on MOS wafer
08/15/2002US20020109200 Semiconductor product with a Schottky contact
08/15/2002US20020109199 Transistor devices
08/15/2002US20020109197 Semiconductor device and method for its manufacture
08/15/2002US20020109196 Semiconductor device and its manufacturing method
08/15/2002US20020109195 Semiconductor device with multiple emitter contact plugs
08/15/2002US20020109194 Semiconductor device
08/15/2002US20020109193 High voltage component and method for making same
08/15/2002US20020109192 Semiconductor devices
08/15/2002US20020109190 Method for forming a lateral SCR device for on-chip ESD protection in shallow-trench-isolation CMOS process
08/15/2002US20020109187 Semiconductor device and method of manufacturing the same
08/15/2002US20020109186 Semiconductor device
08/15/2002US20020109185 Semiconductor device and method of manufacturing thereof
08/15/2002US20020109184 LDMOS with improved safe operating area
08/15/2002US20020109183 Field-effect semiconductor device
08/15/2002US20020109182 Integrated circuit devices having active regions with expanded effective widths and methods of manufacturing same
08/15/2002US20020109181 Method to increase coupling ratio of source to floating gate in split-gate flash
08/15/2002US20020109180 Nonvolatile semiconductor memory device and method of manufacturing the same
08/15/2002US20020109179 Self-aligned non-volatile random access memory cell and process to make the same
08/15/2002US20020109177 Reduced 1/f noise in MOSFETs
08/15/2002US20020109176 Open bit line dram with ultra thin body transistors
08/15/2002US20020109173 Folded bit line DRAM with ultra thin body transistors
08/15/2002US20020109166 MFMOS/MFMS non-volatile memory transistors and method of making same
08/15/2002US20020109165 Semiconductor device, manufacturing method thereof, and electronic apparatus
08/15/2002US20020109164 Photogate with improved short wavelength response for a CMOS imager
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