Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2002
08/22/2002US20020113236 Thin film transistor and fabrication method thereof
08/22/2002US20020113229 Two crossed wires sandwiching an electrically addressable molecular species
08/22/2002US20020112610 Semiconductor pressure sensor and an exhaust system including the same
08/22/2002US20020112538 Micromechanical component
08/22/2002DE10203762A1 Non-volatile semiconductor memory device, includes charge storage region on substrate, control gate on charge storage region, and spacer-shaped gate mask on control gate
08/22/2002DE10152911A1 Integrierte Schaltungsvorrichtungen, die aktive Bereiche mit erweiterten effektiven Breiten aufweisen, und Verfahren zur Herstellung derselben Integrated circuit devices having active regions with enhanced effective widths, and processes for making them
08/22/2002DE10126116A1 Integrierte, abstimmbare Kapazität Integrated tunable capacitance
08/22/2002DE10104776A1 Bipolartransistor und Verfahren zu dessen Herstellung Bipolar transistor and method of producing the
08/22/2002DE10104264A1 Leistungsdiode mit Feldplatten-Randstruktur Power diode with field plate edge structure
08/22/2002DE10103297A1 MOS-Transistor MOS transistor
08/22/2002DE10100802C1 Halbleiterbauelement mit hoher Avalanchefestigkeit und dessen Herstellungsverfahren A semiconductor device having a high avalanche resistance and a production method thereof
08/22/2002CA2438313A1 Optimization method for quantum computing process
08/22/2002CA2437124A1 Isoelectronic co-doping
08/21/2002EP1233457A2 Insulated gate semiconductor device and method of manufacturing the same
08/21/2002EP1233456A2 High voltage/high beta semiconductor devices and methods of fabrication thereof
08/21/2002EP1233454A2 Semiconductor memory device and method of manufacturing the same
08/21/2002EP1233452A2 Semiconductor device, method of manufacturing the same and liquid jet apparatus
08/21/2002EP1233447A2 Semiconductor device
08/21/2002EP1233444A2 Membrane dielectric isolation ic fabrication
08/21/2002EP1233299A1 Monolithically integrated optical component comprising a modulator and a heterojunction bipolar transistor
08/21/2002EP1232523A1 Method in the fabrication of a silicon bipolar transistor
08/21/2002EP1232521A2 Silicon layer highly sensitive to oxygen and method for obtaining same
08/21/2002EP1232520A1 Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
08/21/2002EP1232116A1 Silicon nanoparticle and method for producing the same
08/21/2002EP0608376B1 Voltage variable capacitor
08/21/2002CN1365522A Si Ge C semiconductor crystal and production method thereof
08/21/2002CN1365514A Method for manufacturing a transistor
08/21/2002CN1365448A X-ray plane detector
08/21/2002CN1365247A Luminous device and its producing method
08/21/2002CN1365152A Storage device having independant triode transistor and its operation and producing method
08/21/2002CN1365151A Semiconductor integrated circuit device and its producing method
08/21/2002CN1365149A Semiconductor integrated circuit device and electronic device using them
08/21/2002CN1365146A Semiconductor device and its producing method
08/21/2002CN1089478C Cathode structure body and its producing method
08/20/2002US6438059 Fuse programming circuit for programming fuses
08/20/2002US6438052 Semiconductor memory device having dummy cells around memory cells for serving as compensating capacitor and power supply system incorporated therein
08/20/2002US6438030 Non-volatile memory, method of manufacture, and method of programming
08/20/2002US6438028 Semiconductor integrated circuit device, production and operation method thereof
08/20/2002US6438027 Nonvolatile memory, cell array thereof, and method for sensing data therefrom
08/20/2002US6438022 Memory cell configuration
08/20/2002US6437968 Capacitive element
08/20/2002US6437445 Niobium-near noble metal contact structures for integrated circuits
08/20/2002US6437440 Thin film metal barrier for electrical interconnections
08/20/2002US6437424 Non-volatile semiconductor memory device with barrier and insulating films
08/20/2002US6437422 Active devices using threads
08/20/2002US6437421 Self-aligned dual-base semiconductor process and structure incorporating multiple bipolar device types
08/20/2002US6437420 Semiconductor elements for semiconductor device
08/20/2002US6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices
08/20/2002US6437416 Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance
08/20/2002US6437411 Semiconductor device having chamfered silicide layer and method for manufacturing the same
08/20/2002US6437406 Super-halo formation in FETs
08/20/2002US6437404 Semiconductor-on-insulator transistor with recessed source and drain
08/20/2002US6437402 Power MOS transistor
08/20/2002US6437401 Structure and method for improved isolation in trench storage cells
08/20/2002US6437399 Semiconductor structures with trench contacts
08/20/2002US6437398 One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory
08/20/2002US6437396 Nonvolatile memory
08/20/2002US6437394 Non-volatile semiconductor memory device with reduced line resistance and method of manufacturing
08/20/2002US6437392 Germanium (ge), titanium (ti), and zirconium (zr) or hafnium (hf) oxides; for use in capacitors, transistors, and integrated circuits for random access memory; high dielectric constants and low leakage currents
08/20/2002US6437390 Reversed source-drain mosgated device
08/20/2002US6437389 Vertical gate transistors in pass transistor programmable logic arrays
08/20/2002US6437388 Compact trench capacitor memory cell with body contact
08/20/2002US6437386 Method for creating thick oxide on the bottom surface of a trench structure in silicon
08/20/2002US6437385 Integrated circuit capacitor
08/20/2002US6437380 Ferroelectric device with bismuth tantalate capping layer and method of making same
08/20/2002US6437378 Charge coupled devices including charge signal amplifiers therein
08/20/2002US6437377 Low dielectric constant sidewall spacer using notch gate process
08/20/2002US6437376 Heterojunction bipolar transistor (HBT) with three-dimensional base contact
08/20/2002US6437375 PD-SOI substrate with suppressed floating body effect and method for its fabrication
08/20/2002US6437374 Semiconductor device and method of forming a semiconductor device
08/20/2002US6437372 Diffusion barrier spikes for III-V structures
08/20/2002US6437371 Layered dielectric on silicon carbide semiconductor structures
08/20/2002US6437370 Image sensor structure and manufacturing process therefor
08/20/2002US6437368 Thin film transistor
08/20/2002US6437367 Electro-optical device and method for driving the same
08/20/2002US6437366 Insulated gate semiconductor device and process for fabricating the same
08/20/2002US6437360 Vacuum field transistor
08/20/2002US6437341 Active-matrix substrate, two-dimensional image detector having the same, and pixel defect correcting method of two-dimensional image detector
08/20/2002US6437313 Method for forming a semiconductor device having a semiconductor film with a height difference
08/20/2002US6436848 Advantageous exothermic reaction of nitrous oxide (n2o) in the torch chamber of an oxidizing apparatus
08/20/2002US6436840 Metal gate with CVD amorphous silicon layer and a barrier layer for CMOS devices and method of making with a replacement gate process
08/20/2002US6436827 Fabrication method of a semiconductor device
08/20/2002US6436818 Semiconductor structure having a doped conductive layer
08/20/2002US6436815 Electro-optical device and method for driving the same
08/20/2002US6436801 Hafnium nitride gate dielectric
08/20/2002US6436799 Process for annealing semiconductors and/or integrated circuits
08/20/2002US6436798 MOSFET device
08/20/2002US6436792 Method of manufacturing semiconductor device
08/20/2002US6436785 Tunnel diode comprises two mutually adjoining semiconductor regions of opposed conductivity types having high enough doping concentrations to provide a tunneling junction.
08/20/2002US6436784 Method of forming semiconductor structure
08/20/2002US6436783 Method of forming MOS transistor
08/20/2002US6436781 High speed and low parasitic capacitance semiconductor device and method for fabricating the same
08/20/2002US6436779 Semiconductor device having a plurality of resistive paths
08/20/2002US6436777 Semiconductor device and manufacturing method thereof
08/20/2002US6436775 MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness
08/20/2002US6436774 Method for forming variable-K gate dielectric
08/20/2002US6436773 Fabrication of test field effect transistor structure
08/20/2002US6436769 Split gate flash memory with virtual ground array structure and method of fabricating the same
08/20/2002US6436768 Source drain implant during ONO formation for improved isolation of SONOS devices
08/20/2002US6436767 Semiconductor memory device and process for manufacturing the same