Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2002
08/27/2002US6440786 Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
08/27/2002US6440784 Thin film transistor and a fabricating method thereof
08/27/2002US6440754 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
08/27/2002US6440591 Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof
08/27/2002US6440276 Process for producing thin film gas sensors with dual ion beam sputtering
08/27/2002US6439514 Semiconductor device with elements surrounded by trenches
08/27/2002US6439058 Semiconductor sensor
08/22/2002WO2002065557A1 Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics
08/22/2002WO2002065553A1 Isoelectronic co-doping
08/22/2002WO2002065552A2 Semiconductor devices and their peripheral termination
08/22/2002WO2002065548A2 Integrated circuit arrangement consisting of a flat substrate
08/22/2002WO2002065539A1 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
08/22/2002WO2002065537A2 Formation of metal oxide gate dielectric
08/22/2002WO2002065536A2 Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
08/22/2002WO2002065530A2 Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
08/22/2002WO2002065527A1 Method for patterning a multilayered conductor/substrate structure
08/22/2002WO2002065525A1 Integration of high k gate dielectric
08/22/2002WO2002065524A1 Silicide stop layer in a damascene gate semiconductor structure
08/22/2002WO2002065523A1 Gate electrode silicidation layer
08/22/2002WO2002065522A1 Flash memory with ultra thin vertical body transistors
08/22/2002WO2002065517A2 Deposition method over mixed substrates using trisilane
08/22/2002WO2002065516A2 Improved process for deposition of semiconductor films
08/22/2002WO2002065508A2 Dopant precursors and processes
08/22/2002WO2002065507A2 Dynamic memory based on single electron storage
08/22/2002WO2002065476A1 Programmable fuse and antifuse and method therefor
08/22/2002WO2002065393A2 Optimization method for quantum computing process
08/22/2002WO2002064853A2 Thin films and methods of making them using trisilane
08/22/2002WO2002047146A3 DAMASCENE NiSi METAL GATE HIGH-K TRANSISTOR
08/22/2002WO2002047113A3 Layers in substrate wafers
08/22/2002WO2002045176B1 Self-aligned non-volatile memory cell
08/22/2002WO2002043124A3 Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate
08/22/2002WO2002043115A3 Surface preparation prior to deposition
08/22/2002WO2002027768A3 Fabrication of semiconductor devices
08/22/2002WO2002023674A3 Thick film millimeter wave transceiver module
08/22/2002WO2002019383A3 Electron spectrometer
08/22/2002WO2002011211A3 An optical device and a method of making an optical device
08/22/2002WO2001065608A3 Trench gate dmos field-effect transistor and method of making the same
08/22/2002US20020116162 Device simulation method, device simulation system and device simulation program
08/22/2002US20020115304 Manufacturing method for a field-effect transistor, manufacturing method for a semiconductor device, and apparatus therefor
08/22/2002US20020115303 Semiconductor device and method of producing the same
08/22/2002US20020115297 Process for manufacturing reflective TFT-LCD with rough diffuser
08/22/2002US20020115290 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
08/22/2002US20020115289 Method for decreasing the resistivity of the gate and the leaky junction of the source/drain
08/22/2002US20020115288 Method for decreasing the resistivity of the gate and the leaky junction of the source/drain
08/22/2002US20020115276 A method of etching polycrystalline silicon film by using two consecutive dry-etching processes
08/22/2002US20020115272 Manufacturing method for improving reliability of polysilicon thin film transistors
08/22/2002US20020115271 Method of manufacturing a semiconductor device
08/22/2002US20020115260 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
08/22/2002US20020115258 Overcoating electrode with tantalum oxynitride; heat treatment; low pressure vapor deposition
08/22/2002US20020115257 Insulated gate type semiconductor device and method for fabricating the same
08/22/2002US20020115255 Method of fabricating a non-volatile memory device
08/22/2002US20020115254 Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
08/22/2002US20020115252 Dielectric interface films and methods therefor
08/22/2002US20020115246 Method for crystallizing silicon film and thin film transistor and fabricating method using the same
08/22/2002US20020115245 Method for forming thin film transistor with lateral crystallization
08/22/2002US20020115244 SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same
08/22/2002US20020115243 Method to fabricate an intrinsic polycrystalline silicon film
08/22/2002US20020115242 Method and apparatus for fabricating thin film transistor including crystalline active layer
08/22/2002US20020115241 Thin film transistor, liquid crystal display and manufacturing method thereof
08/22/2002US20020115240 Double soi device with recess etch and epitaxy
08/22/2002US20020115233 Semiconductor device and method for fabricating the same
08/22/2002US20020115232 Semiconductor chip production method and semiconductor wafer
08/22/2002US20020115228 Manufacturing method of a semiconductor device
08/22/2002US20020114207 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
08/22/2002US20020114191 Semiconductor memory device and method of manufacturing the same
08/22/2002US20020114185 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase
08/22/2002US20020114179 Contactless channel write/erase flash memory cell and its fabrication method
08/22/2002US20020114116 Semiconductor devices
08/22/2002US20020113934 Array substrate and display unit using it and production method for array substrate
08/22/2002US20020113916 Tft array substrate, and liquid crystal display device using the same
08/22/2002US20020113914 Active matrix liquid crystal display device and switching element used therein
08/22/2002US20020113889 CCD imaging device and driving method thereof
08/22/2002US20020113317 A semiconductor device having hydogen diffusion and barrier layers and a method of producing the same
08/22/2002US20020113314 Method of forming iridium conductive electrode/barrier structure
08/22/2002US20020113295 Semiconductor device and method for its manufacture
08/22/2002US20020113294 CMOS semiconductor device and method of manufacturing the same
08/22/2002US20020113287 Semiconductor integrated circuit device with capacitor formed under bonding pad
08/22/2002US20020113285 Detector diode with internal calibration structure
08/22/2002US20020113282 Semiconductor photodetection device
08/22/2002US20020113279 Semiconductor device, and method of forming an electrode
08/22/2002US20020113278 Stacked semiconductor integrated circuit device and manufacturing method thereof
08/22/2002US20020113277 Sub-critical-dimension integrated circuit features
08/22/2002US20020113276 High integration density mos technology power device structure
08/22/2002US20020113275 SOI component
08/22/2002US20020113274 Field effect semiconductor device and its production method
08/22/2002US20020113272 Embedded type flash memory structure and method for operating the same
08/22/2002US20020113269 Field transistors for electrostatic discharge protection and methods for fabricating the same
08/22/2002US20020113268 Nonvolatile memory, semiconductor device and method of manufacturing the same
08/22/2002US20020113266 Semiconductor devices and methods for manufacturing the same
08/22/2002US20020113264 Thin-film transistor and method of manufacturing the same
08/22/2002US20020113263 Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same
08/22/2002US20020113262 P-channel dynamic flash memory cells with ultrathin tunnel oxides
08/22/2002US20020113261 Semiconductor device
08/22/2002US20020113257 Semiconductor device
08/22/2002US20020113256 Semiconductor device and method for manufacturing the same
08/22/2002US20020113255 MOS transistor and method for producing the transistor
08/22/2002US20020113249 Semiconductor element
08/22/2002US20020113240 Semiconductor device and method for producing the same
08/22/2002US20020113239 Semiconductor device with a tapered hole formed using multiple layers with different etching rates
08/22/2002US20020113238 Thin-film transistor array structure