| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/28/2002 | EP1235226A2 Nonvolatile memory |
| 08/28/2002 | EP1234337A2 Semiconductor circuit arrangement and a method for producing same |
| 08/28/2002 | EP1234336A1 Radiation resistant integrated circuit design |
| 08/28/2002 | EP1234335A1 Method of manufacturing a semiconductor device using a halo implantation |
| 08/28/2002 | EP1234332A2 Dram cell structure with tunnel barrier |
| 08/28/2002 | EP1234331A1 Planar hybrid diode rectifier bridge |
| 08/28/2002 | EP1234329A1 Method for producing a bipolar transistor and method for producing an integrated circuit arrangement with such a bipolar transistor |
| 08/28/2002 | EP1234325A1 Process for fabricating a uniform gate oxide of a vertical transistor |
| 08/28/2002 | EP1234324A1 High temperature oxide deposition for eeprom devices |
| 08/28/2002 | EP1151478B1 Power mos element and method for producing the same |
| 08/28/2002 | EP0811249B1 Emitter ballast bypass for radio frequency power transistors |
| 08/28/2002 | CN2508398Y Semiconductor chip of semicondcutor discharge tube |
| 08/28/2002 | CN1366715A Edge-emitting light-emitting semiconductor device and method of manufacturing thereof |
| 08/28/2002 | CN1366713A Semiconductor device and method of manufacturing same |
| 08/28/2002 | CN1366712A Information processing structure |
| 08/28/2002 | CN1366711A Semiconductor device with integrated CMOS circuit with MOS transistors having silicon-germanium (Sil-Gex) gate electrodes, and method for manufacturing same |
| 08/28/2002 | CN1366710A Method of fabricating power rectifier device to vary operating parameters and resulting device |
| 08/28/2002 | CN1366686A Laminated body, capacitor, electronic part, and method and device for manufacturing the same |
| 08/28/2002 | CN1366677A Reference cell for huigh speed sensing in non-volatile memories |
| 08/28/2002 | CN1366351A Thin film transistor and its manufacturing method and semiconductor device of said transistor |
| 08/28/2002 | CN1366350A Semiconductor device and its making method |
| 08/28/2002 | CN1366349A Semiconductor apparatus and its making method |
| 08/28/2002 | CN1366348A Semiconductor apparatus and its making method |
| 08/28/2002 | CN1366347A Semiconductor device and its making method |
| 08/28/2002 | CN1366346A Point contact planar grid type single-electronic transistor and its preparing process |
| 08/28/2002 | CN1366345A Point-contact planar grid type single-electron transistor and its preparing process |
| 08/28/2002 | CN1366341A Semiconductor device and its making method |
| 08/28/2002 | CN1366340A Semiconductor equipment and its manufacturing method |
| 08/28/2002 | CN1366311A Ceramic electron parts |
| 08/28/2002 | CN1366206A Liquid crystal display equipment array substrate and its making method |
| 08/28/2002 | CN1089949C 半导体器件 Semiconductor devices |
| 08/28/2002 | CN1089948C 电力控制器件 Power control device |
| 08/28/2002 | CN1089947C Method for producing semiconductor device having capacitor |
| 08/27/2002 | US6442042 Circuit configuration having at least one nanoelectronic component and method for fabricating the component |
| 08/27/2002 | US6441879 Liquid crystal display device |
| 08/27/2002 | US6441758 D/A conversion circuit and semiconductor device |
| 08/27/2002 | US6441716 Semiconductor piezoresistor |
| 08/27/2002 | US6441654 Inductive load driving circuit |
| 08/27/2002 | US6441504 Precision aligned and marked structure |
| 08/27/2002 | US6441495 Semiconductor device of stacked chips |
| 08/27/2002 | US6441475 Chip scale surface mount package for semiconductor device and process of fabricating the same |
| 08/27/2002 | US6441468 Semiconductor device |
| 08/27/2002 | US6441464 Gate oxide stabilization by means of germanium components in gate conductor |
| 08/27/2002 | US6441463 IGBT, control circuit, and protection circuit on same substrate |
| 08/27/2002 | US6441462 Self-aligned SiGe NPN with improved ESD robustness using wide emitter polysilicon extension |
| 08/27/2002 | US6441456 Semiconductor device and a process for manufacturing the same |
| 08/27/2002 | US6441455 Low dosage field rings for high voltage semiconductor device |
| 08/27/2002 | US6441454 Trenched Schottky rectifiers |
| 08/27/2002 | US6441451 Pressure transducer and manufacturing method thereof |
| 08/27/2002 | US6441450 Acceleration sensor and method of manufacturing the same |
| 08/27/2002 | US6441448 Semiconductor storage device |
| 08/27/2002 | US6441446 Device with integrated bipolar and MOSFET transistors in an emitter switching configuration |
| 08/27/2002 | US6441445 Integrated device with bipolar transistor and electronic switch in “emitter switching” configuration |
| 08/27/2002 | US6441444 Semiconductor device having a nitride barrier for preventing formation of structural defects |
| 08/27/2002 | US6441443 Embedded type flash memory structure and method for operating the same |
| 08/27/2002 | US6441435 SOI device with wrap-around contact to underside of body, and method of making |
| 08/27/2002 | US6441434 Semiconductor-on-insulator body-source contact and method |
| 08/27/2002 | US6441433 Method of making a multi-thickness silicide SOI device |
| 08/27/2002 | US6441432 High voltage lateral semiconductor device |
| 08/27/2002 | US6441431 Lateral double diffused metal oxide semiconductor device |
| 08/27/2002 | US6441430 Semiconductor device with floating gates |
| 08/27/2002 | US6441428 One-sided floating-gate memory cell |
| 08/27/2002 | US6441427 NOR-type flash memory and method for manufacturing the same |
| 08/27/2002 | US6441426 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 08/27/2002 | US6441421 High dielectric constant materials forming components of DRAM storage cells |
| 08/27/2002 | US6441417 Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same |
| 08/27/2002 | US6441416 Resin-encapsulated semiconductor apparatus and process for its fabrication |
| 08/27/2002 | US6441414 Ferroelectric field effect transistor, memory utilizing same, and method of operating same |
| 08/27/2002 | US6441410 MOSFET with lateral resistor ballasting |
| 08/27/2002 | US6441409 Dual-line type charge transfer device |
| 08/27/2002 | US6441408 Power semiconductor component for high reverse voltages |
| 08/27/2002 | US6441407 Gate controlled thyristor driven with low-inductance |
| 08/27/2002 | US6441406 Semiconductor device |
| 08/27/2002 | US6441399 Semiconductor integrated system |
| 08/27/2002 | US6441397 Evaluation of semiconductor chargeup damage and apparatus therefor |
| 08/27/2002 | US6441395 Column-row addressable electric microswitch arrays and sensor matrices employing them |
| 08/27/2002 | US6441392 Device based on quantic islands and method for making same |
| 08/27/2002 | US6441391 Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate |
| 08/27/2002 | US6440875 Masking layer method for forming a spacer layer with enhanced linewidth control |
| 08/27/2002 | US6440870 Accuracy control of etching using plasma |
| 08/27/2002 | US6440868 Metal gate with CVD amorphous silicon layer and silicide for CMOS devices and method of making with a replacement gate process |
| 08/27/2002 | US6440862 Stepped photoresist profile and opening formed using the profile |
| 08/27/2002 | US6440852 Integrated circuit including passivated copper interconnection lines and associated manufacturing methods |
| 08/27/2002 | US6440830 Metal-oxide-semiconductor field effect transistors (mosfets) having copper metallization on a polysilicon gate |
| 08/27/2002 | US6440829 N-profile engineering at the poly/gate oxide and gate oxide/SI interfaces through NH3 annealing of a layered poly/amorphous-silicon structure |
| 08/27/2002 | US6440826 NiSi contacting extensions of active regions |
| 08/27/2002 | US6440824 Method of crystallizing a semiconductor thin film, and method of manufacturing a thin-film semiconductor device |
| 08/27/2002 | US6440812 Angled implant to improve high current operation of bipolar transistors |
| 08/27/2002 | US6440810 Method in the fabrication of a silicon bipolar transistor |
| 08/27/2002 | US6440808 Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly |
| 08/27/2002 | US6440807 Surface engineering to prevent EPI growth on gate poly during selective EPI processing |
| 08/27/2002 | US6440806 Method for producing metal-semiconductor compound regions on semiconductor devices |
| 08/27/2002 | US6440805 Method of forming a semiconductor device with isolation and well regions |
| 08/27/2002 | US6440801 Structure for folded architecture pillar memory cell |
| 08/27/2002 | US6440800 Method to form a vertical transistor by selective epitaxial growth and delta doped silicon layers |
| 08/27/2002 | US6440796 Poly spacer split gate cell with extremely small cell size |
| 08/27/2002 | US6440793 Vertical MOSFET |
| 08/27/2002 | US6440790 Method of making semiconductor device having an insulating film positioned between two similarly shaped conductive films |
| 08/27/2002 | US6440788 Implant sequence for multi-function semiconductor structure and method |
| 08/27/2002 | US6440787 Manufacturing method of semiconductor device |